Toshiba Other Function Memory ICs 207

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
TH50VSF3680AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	4194304 words			3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel			4MX16	4M		-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B69	3.3 V	1.4 mm	9 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 8M SRAM MEMORY	e0		12 mm	90 ns
TH50VSF3583AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words			3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel			2MX16	2M		-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B69	3.3 V	1.4 mm	9 mm	Not Qualified	33554432 bit	2.67 V	USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 512K X 16 OR 1M X 8	e0		12 mm	80 ns
TC51832ASPL-10	Toshiba		COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE		45 mA	32768 words		COMMON	5		5	8	IN-LINE	DIP28,.3	Other Memory ICs	2.54 mm	70 Cel		3-STATE	32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28				Not Qualified	262144 bit			e0	.0001 Amp		100 ns
THMY6440A1AEG12A	Toshiba
TH50VSF3582AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words			3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel			2MX16	2M		-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B69	3.3 V	1.4 mm	9 mm	Not Qualified	33554432 bit	2.67 V	USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 512K X 16 OR 1M X 8	e0		12 mm	80 ns
THM72V4010BTG-70	Toshiba		COMMERCIAL	168	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1630 mA	4194304 words	NO	COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel		3-STATE	4MX72	4M		0 Cel		DUAL	R-PDMA-N168		25.4 mm		Not Qualified	301989888 bit				.019 Amp		70 ns
TH50VSF2580AASB	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words			3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel			2MX16	2M		-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B69	3.6 V	1.4 mm	9 mm	Not Qualified	33554432 bit	2.7 V	USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 256 X 16 OR 512K X 8	e0		12 mm	90 ns
TC518128AFTL-10	Toshiba		COMMERCIAL	32	TSSOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		60 mA	131072 words		COMMON	5		5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	Other Memory ICs	.5 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32				Not Qualified	1048576 bit			e0	.0002 Amp		100 ns
TC74HC670P	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	16	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4 words						4	IN-LINE			2.54 mm	85 Cel			4X4	4		-40 Cel	TIN LEAD	DUAL	R-PDIP-T16	6 V	5 mm	7.62 mm	Not Qualified	16 bit	2 V		e0		19.304 mm
THM324000CS50	Toshiba
TC518512ATR-80	Toshiba		COMMERCIAL	32	TSOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		60 mA	524288 words	YES	COMMON	5		5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	Other Memory ICs	1.27 mm	70 Cel	YES	3-STATE	512KX8	512K	2.7 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32				Not Qualified	4194304 bit			e0	.0001 Amp		80 ns
TH50VSF1302ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA					FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel						-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48				Not Qualified				e0	.00003 Amp		100 ns
THM362060ASG70	Toshiba		COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		918 mA	2097152 words		COMMON	5		5	36	MICROELECTRONIC ASSEMBLY	SSIM72	Other Memory ICs	1.27 mm	70 Cel		3-STATE	2MX36	2M		0 Cel		SINGLE	R-PSMA-N72		25.4 mm		Not Qualified	75497472 bit				.018 Amp		70 ns
TH50VSF0321BCXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	524288 words			3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel			512KX16	512K		-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48	3.6 V	1.6 mm	10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS ORGANISED AS 128K X 8; FLASH MEMORY IS ORGANISED AS 1M X 8	e0	.00003 Amp	12 mm	100 ns
TC51101AZ10	Toshiba
TC518128AFTL-80LV	Toshiba		COMMERCIAL	32	TSSOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		20 mA	131072 words		COMMON	3.3		3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	Other Memory ICs	.5 mm	70 Cel		3-STATE	128KX8	128K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32				Not Qualified	1048576 bit			e0	.0001 Amp		80 ns
TH50VSF1321ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA					FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel						-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48				Not Qualified				e0	.00003 Amp		100 ns
THGAF8G9T43BAIR	Toshiba	MEMORY CIRCUIT
TC528257FT-70	Toshiba	VIDEO DRAM	COMMERCIAL	40	TSOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		160 mA	262144 words			5		5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Other Memory ICs	.8 mm	70 Cel			256KX8	256K		0 Cel		DUAL	R-PDSO-G40				Not Qualified	2097152 bit				.01 Amp		70 ns
TH50VSF0320BAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	524288 words			3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel			512KX16	512K		-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48	3.6 V	1.6 mm	10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS ORGANISED AS 128K X 8; FLASH MEMORY IS ORGANISED AS 1M X 8	e0	.00003 Amp	12 mm	100 ns
THM401040SG10	Toshiba
THM72V2010AG-60	Toshiba		COMMERCIAL	168	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1180 mA	2097152 words	NO	COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel		3-STATE	2MX72	2M		0 Cel		DUAL	R-PDMA-N168		25.4 mm		Not Qualified	150994944 bit				.0145 Amp		60 ns
TH50VSF1321AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words			3			8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel			1MX8	1M		-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1.6 mm	10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS CONFIGURED AS 256 K X 8	e0		12 mm
TH50VSF0302BCXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA					FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel						-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48				Not Qualified				e0	.00003 Amp		100 ns
THGAF8T1T83BAIR	Toshiba	MEMORY CIRCUIT
TC51832AFL-70	Toshiba		COMMERCIAL	28	SOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		70 mA	32768 words		COMMON	5		5	8	SMALL OUTLINE	SOP28,.5	Other Memory ICs	1.27 mm	70 Cel		3-STATE	32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G28				Not Qualified	262144 bit			e0	.0001 Amp		70 ns
TH50VSF3682AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	4194304 words			3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel			4MX16	4M		-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B69	3.3 V	1.4 mm	9 mm	Not Qualified	67108864 bit	2.7 V	USER CONFIGURABLE AS 8M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 512K X 16 OR 1M X 8	e0		12 mm	80 ns
TH50VSF1481AASB	Toshiba	MEMORY CIRCUIT	OTHER	65	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	1048576 words			3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA65,10X12,32	Other Memory ICs	.8 mm	85 Cel			1MX16	1M		-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B65	3.6 V	1.4 mm	9 mm	Not Qualified	16777216 bit	2.7 V	SRAM IS ORGANISED AS 128K X 16	e0		12 mm	100 ns
THMY644071AEG10	Toshiba
TH50VSF0302BAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	1048576 words			3	FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel			1MX8	1M		-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48	3.6 V	1.6 mm	10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS ORGANISED AS 128K X 8	e0	.00003 Amp	12 mm	100 ns
TC518128BFTL-70L	Toshiba		COMMERCIAL	32	TSSOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		70 mA	131072 words		COMMON	5		5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	Other Memory ICs	.5 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32				Not Qualified	1048576 bit			e0	.00005 Amp		70 ns
TC51101AP80	Toshiba
TC518512FL-70	Toshiba		COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		70 mA	524288 words	NO	COMMON	5		5	8	SMALL OUTLINE	SOP32,.56	Other Memory ICs	1.27 mm	70 Cel		3-STATE	512KX8	512K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32				Not Qualified	4194304 bit			e0	.0002 Amp		70 ns
T5841	Toshiba
TMM27128D-20	Toshiba																																TIN LEAD										e0
TC518128BFTL-70	Toshiba		COMMERCIAL	32	TSSOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		70 mA	131072 words		COMMON	5		5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	Other Memory ICs	.5 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32				Not Qualified	1048576 bit			e0	.0002 Amp		70 ns
TH50VSF1460AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words			3			16	GRID ARRAY, LOW PROFILE			1 mm	85 Cel			1MX16	1M		-20 Cel		BOTTOM	R-PBGA-B48	3.6 V	1.6 mm	10 mm	Not Qualified	16777216 bit	2.7 V				14 mm
TH50VSF1421ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA					FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel						-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48				Not Qualified				e0	.00003 Amp		100 ns
TC74AC9001P	Toshiba
TC57256D-25	Toshiba																																TIN LEAD										e0
HDTS724EZSTA	Toshiba	MEMORY CIRCUIT
TH50VSF0303BCXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA					FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel						-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48				Not Qualified				e0	.00003 Amp		100 ns
THGBM3G5D1FBAIE	Toshiba	MEMORY CIRCUIT	OTHER	169	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		4294967296 words			3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel			4GX8	4G		-25 Cel		BOTTOM	R-PBGA-B169	3.6 V	1.2 mm	12 mm		34359738368 bit	2.7 V				16 mm
THGBMHG9C8LBAU8	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL			68719476736 words						8	GRID ARRAY				105 Cel			64GX8	64G		-40 Cel		BOTTOM	R-PBGA-B153					549755813888 bit
THGBMHG8C2LBAIL	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL			34359738368 words						8	GRID ARRAY				85 Cel			32GX8	32G		-25 Cel		BOTTOM	R-PBGA-B153					274877906944 bit
THGBMHG7C2LBAWR	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		17179869184 words						8	GRID ARRAY				85 Cel			16GX8	16G		-40 Cel		BOTTOM	R-PBGA-B153					137438953472 bit
THGBMHG8C4LBAWR	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	153	BGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		34359738368 words						8	GRID ARRAY				85 Cel			32GX8	32G		-40 Cel		BOTTOM	R-PBGA-B153					274877906944 bit
THGBMHG7C1LBAIL	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL			17179869184 words						8	GRID ARRAY				85 Cel			16GX8	16G		-25 Cel		BOTTOM	R-PBGA-B153					137438953472 bit

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.