Toshiba Other Function Memory ICs 207

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Interleaved Burst Length Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

THGBMHG6C1LBAWL

Toshiba

MEMORY CIRCUIT

INDUSTRIAL

153

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

8589934592 words

8

GRID ARRAY

85 Cel

8GX8

8G

-40 Cel

BOTTOM

R-PBGA-B153

68719476736 bit

THGBMGG9U4LBAIR

Toshiba

MEMORY CIRCUIT

OTHER

153

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

68719476736 words

8

GRID ARRAY

85 Cel

64GX8

64G

-25 Cel

BOTTOM

R-PBGA-B153

549755813888 bit

THGBMHG6C1LBAAL

Toshiba

MEMORY CIRCUIT

INDUSTRIAL

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

ASYNCHRONOUS

8589934592 words

8

GRID ARRAY

85 Cel

8GX8

8G

-40 Cel

BOTTOM

R-PBGA-B

68719476736 bit

THGBMHG6C1LBAU6

Toshiba

MEMORY CIRCUIT

INDUSTRIAL

153

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

8589934592 words

8

GRID ARRAY

105 Cel

8GX8

8G

-40 Cel

BOTTOM

R-PBGA-B153

68719476736 bit

THGBMHG9C8LBAAG

Toshiba

MEMORY CIRCUIT

INDUSTRIAL

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

ASYNCHRONOUS

68719476736 words

8

GRID ARRAY

85 Cel

64GX8

64G

-40 Cel

BOTTOM

R-PBGA-B

549755813888 bit

THGBMHG8C4LBAAR

Toshiba

MEMORY CIRCUIT

INDUSTRIAL

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

ASYNCHRONOUS

34359738368 words

8

GRID ARRAY

85 Cel

32GX8

32G

-40 Cel

BOTTOM

R-PBGA-B

274877906944 bit

THGBMHG9C4LBAIR

Toshiba

MEMORY CIRCUIT

OTHER

153

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

68719476736 words

8

GRID ARRAY

85 Cel

64GX8

64G

-25 Cel

BOTTOM

R-PBGA-B153

549755813888 bit

THGBMHG8C4LBAU7

Toshiba

MEMORY CIRCUIT

INDUSTRIAL

153

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

34359738368 words

8

GRID ARRAY

105 Cel

32GX8

32G

-40 Cel

BOTTOM

R-PBGA-B153

274877906944 bit

THGBM3G4D1FBAIG

Toshiba

MEMORY CIRCUIT

OTHER

153

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

2147483648 words

3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

.5 mm

85 Cel

2GX8

2G

-25 Cel

BOTTOM

R-PBGA-B153

3.6 V

1.2 mm

11.5 mm

17179869184 bit

2.7 V

13 mm

THGBMHG7C2LBAU7

Toshiba

MEMORY CIRCUIT

INDUSTRIAL

153

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

17179869184 words

8

GRID ARRAY

105 Cel

16GX8

16G

-40 Cel

BOTTOM

R-PBGA-B153

137438953472 bit

THGBMHG8C2LBAILH40

Toshiba

MEMORY CIRCUIT

OTHER

153

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

34359738368 words

NAND+FLASH

8

GRID ARRAY

85 Cel

32GX8

32G

-25 Cel

BOTTOM

R-PBGA-B153

274877906944 bit

THGBMHG7C2LBAAR

Toshiba

MEMORY CIRCUIT

INDUSTRIAL

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

ASYNCHRONOUS

17179869184 words

8

GRID ARRAY

85 Cel

16GX8

16G

-40 Cel

BOTTOM

R-PBGA-B

137438953472 bit

THGBMGT0U8LBAIG

Toshiba

MEMORY CIRCUIT

OTHER

153

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

137438953472 words

8

GRID ARRAY

85 Cel

128GX8

128G

-25 Cel

BOTTOM

R-PBGA-B153

1099511627776 bit

THGBMHT0C8LBAIG

Toshiba

MEMORY CIRCUIT

OTHER

153

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

137438953472 words

8

GRID ARRAY

85 Cel

128GX8

128G

-25 Cel

BOTTOM

R-PBGA-B153

1099511627776 bit

THGBMHG9C8LBAWG

Toshiba

MEMORY CIRCUIT

INDUSTRIAL

153

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

68719476736 words

8

GRID ARRAY

85 Cel

64GX8

64G

-40 Cel

BOTTOM

R-PBGA-B153

549755813888 bit

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.