Other Function Memory ICs

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MR256A08BSO35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	65 mA	32768 words	3.3		3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.25 mm	70 Cel	32KX8	32K	0 Cel		DUAL		R-PDSO-G32		3.6 V	2.54 mm	7.505 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.007 Amp	20.726 mm	35 ns
MR25H256CDC	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	HSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SYNCHRONOUS		32768 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG	SOLCC8,.25	SRAMs	1.27 mm	85 Cel	32KX8	32K	-40 Cel		DUAL		R-PDSO-N8	3	3.6 V	1.05 mm	5 mm	Not Qualified	262144 bit	2.7 V					.00001 Amp	6 mm
47C16T-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		2048 words	5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel	2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm	3.9 mm		16384 bit	4.5 V		e3	40	260		4.9 mm	400 ns
DS2401-SL+T&R	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		64 words	5		3/5	1	CYLINDRICAL	SIP3,.1,50	Other Memory ICs	1.27 mm	85 Cel	64X1	64	-40 Cel	Matte Tin (Sn) - annealed	BOTTOM		O-PBCY-T3		6 V			Not Qualified	64 bit	2.8 V		e3		250
MB85RS4MTYPN-G-AWEWE1	Fujitsu																															3									5	255
AT88SC0104CA-SH-T	Microchip Technology	CRYPTO MEMORY		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		128 words				8	SMALL OUTLINE	SOP8,.25		1.27 mm	85 Cel	128X8	128	-40 Cel	MATTE TIN	DUAL		R-PDSO-G8		3.6 V	1.75 mm	3.9 mm		1024 bit	2.7 V		e3				4.9 mm
ST25DV64K-JFR6D3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	12	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SYNCHRONOUS		65536 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel	64KX1	64K	-40 Cel		DUAL		S-PDSO-N12		5.5 V	.6 mm	3 mm		65536 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		3 mm
MR25H10CDC	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SYNCHRONOUS	27 mA	131072 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	SRAMs	1.27 mm	85 Cel	128KX8	128K	-40 Cel		DUAL		R-PDSO-N8		3.6 V	1 mm	5 mm	Not Qualified	1048576 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	.000115 Amp	6 mm
S27KL0641DABHI020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words	3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	8MX8	8M	-40 Cel		BOTTOM		R-PBGA-B24	3	3.6 V	1 mm	6 mm		67108864 bit	2.7 V						8 mm
MR0D08BMA45R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	65 mA	131072 words	3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	70 Cel	128KX8	128K	0 Cel		BOTTOM		S-PBGA-B48		3.6 V	1.35 mm	8 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.008 Amp	8 mm	45 ns
4180	Motorola
MB85RS4MTYPF-G-BCE1	Fujitsu
MR0A08BYS35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	65 mA	131072 words	3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel	128KX8	128K	0 Cel		DUAL		R-PDSO-G44	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3 V					.007 Amp	18.41 mm	35 ns
MR20H40CDFR	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SYNCHRONOUS	46.5 mA	524288 words	3.3		3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	SRAMs	1.27 mm	85 Cel	512KX8	512K	-40 Cel		DUAL		R-PDSO-N8	3	3.6 V	.9 mm	5 mm	Not Qualified	4194304 bit	3 V					.00075 Amp	6 mm
S27KL0641DABHB020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		8388608 words	3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	8MX8	8M	-40 Cel		BOTTOM		R-PBGA-B24	3	3.6 V	1 mm	6 mm		67108864 bit	2.7 V						8 mm
SSDSCKJB240G701	Intel	MEMORY CIRCUIT
DS1993L-F5	Maxim Integrated	MEMORY CIRCUIT	OTHER	2		ROUND	METAL	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		4096 words			3/5	1	DISK BUTTON	BUTTON,.68IN	SRAMs		70 Cel	4KX1	4K	-40 Cel		END		O-MEDB-N2		6 V			Not Qualified	4096 bit	2.8 V		e0	NOT SPECIFIED	NOT SPECIFIED			15000 ns
DS1993L-F5+	Analog Devices	MEMORY CIRCUIT	OTHER	2		ROUND	METAL	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		4096 words			3/5	1	DISK BUTTON	BUTTON,.68IN	SRAMs		70 Cel	4KX1	4K	-40 Cel	Matte Tin (Sn) - annealed	END		O-MEDB-N2		6 V			Not Qualified	4096 bit	2.8 V		e3					15000 ns
MR25H256CDF	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SYNCHRONOUS		32768 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			1.27 mm	85 Cel	32KX8	32K	-40 Cel	MATTE TIN	DUAL		R-PDSO-N8	3	3.6 V	.9 mm	5 mm		262144 bit	2.7 V		e3	30	260		6 mm
MT29GZ5A5BPGGA-53IT.87J	Micron Technology	MEMORY CIRCUIT		149	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words	1.8	FLASH+LPDDR		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA149,14X16,20		.5 mm	85 Cel	256MX16	256M	-40 Cel		BOTTOM		R-PBGA-B149		1.95 V	.8 mm	8 mm		4294967296 bit	1.7 V						9.5 mm
ST25DV16K-JFR6D3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	12	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SYNCHRONOUS		16384 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel	16KX1	16K	-40 Cel		DUAL		S-PDSO-N12		5.5 V	.6 mm	3 mm		16384 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		3 mm
DS2411X#U	Maxim Integrated	MEMORY CIRCUIT																																							NOT SPECIFIED	NOT SPECIFIED
FM3808-70-T	Ramtron International	MEMORY CIRCUIT	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1			GULL WING	SYNCHRONOUS		32768 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel	32KX8	32K	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e0		240		11.8 mm
M30082040054X0IWAY	Renesas Electronics	MEMORY CIRCUIT		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SYNCHRONOUS		1048576 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		1.27 mm	85 Cel	1MX8	1M	-40 Cel	TIN	DUAL		R-PDSO-N8	3	3.6 V	.8 mm	5 mm		8388608 bit	2.7 V		e3		260		6 mm
SSDPE2KX010T801	Intel	MEMORY CIRCUIT	COMMERCIAL			RECTANGULAR	UNSPECIFIED		1	CMOS			ASYNCHRONOUS		1099511627776 words				8					70 Cel	1TX8	1T	0 Cel										8796093022208 bit
CY15B104QSN-108SXIES	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		524288 words	3			8	SMALL OUTLINE			1.27 mm	85 Cel	512KX8	512K	-40 Cel		DUAL		R-PDSO-G8		3.6 V	2.03 mm	5.23 mm		4194304 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		5.23 mm
CY8C20110-SX2IT	Infineon Technologies	MEMORY CIRCUIT																														3
MR2A16AVMA35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		262144 words	3.3		3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	105 Cel	256KX16	256K	-40 Cel		BOTTOM		S-PBGA-B48	3	3.6 V	1.35 mm	8 mm	Not Qualified	4194304 bit	3 V			40	260	.028 Amp	8 mm	35 ns
MT29F4G01ADAGDWB-IT:G	Micron Technology	MEMORY CIRCUIT																																							NOT SPECIFIED	NOT SPECIFIED
S27KL0641DABHV023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words	3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	8MX8	8M	-40 Cel		BOTTOM		R-PBGA-B24	3	3.6 V	1 mm	6 mm		67108864 bit	2.7 V						8 mm
47C04T-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		512 words	5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	125 Cel	512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm	3.9 mm		4096 bit	4.5 V		e3	40	260		4.9 mm	400 ns
47L04-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		512 words		EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel	512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm	3.9 mm		4096 bit	2.7 V		e3	40	260		4.9 mm	400 ns
AF8GUD3-OEM	Atp Electronics	MEMORY CIRCUIT	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD			8589934592 words				8	UNCASED CHIP				85 Cel	8GX8	8G	-25 Cel		UPPER		X-XUUC-N						68719476736 bit
MR2A08AMYS35	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	ASYNCHRONOUS	135 mA	262144 words	3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	256KX8	256K	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.02 Amp	18.41 mm	35 ns
MR2A16ACMA35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		262144 words	3.3		3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	256KX16	256K	-40 Cel		BOTTOM		S-PBGA-B48	3	3.6 V	1.35 mm	8 mm	Not Qualified	4194304 bit	3 V			40	260	.028 Amp	8 mm	35 ns
WSF512K16-39H2I	Microsemi	MEMORY CIRCUIT	INDUSTRIAL	66	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	ASYNCHRONOUS		524288 words	5			16	GRID ARRAY			2.54 mm	85 Cel	512KX16	512K	-40 Cel	GOLD	PERPENDICULAR		S-CPGA-P66		5.5 V	5.7 mm	35.2 mm	Not Qualified	8388608 bit	4.5 V	SRAM IS ORGANISED AS 512K X 16	e4				35.2 mm
CY15B256Q-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		32768 words	3.3			8	SMALL OUTLINE			1.27 mm	85 Cel	32KX8	32K	-40 Cel	PURE TIN	DUAL		R-PDSO-G8	3	3.6 V	1.727 mm	3.898 mm		262144 bit	2 V				260		4.889 mm
M27C256B	Koa Speer Electronics
MR2A16AMYS35	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	ASYNCHRONOUS		262144 words	3.3			16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel	256KX16	256K	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm		4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		18.41 mm
S27KS0641DPBHI023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words	1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	8MX8	8M	-40 Cel		BOTTOM		R-PBGA-B24	3	1.95 V	1 mm	6 mm		67108864 bit	1.7 V						8 mm
S70KS1281DPBHI020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words	1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	16MX8	16M	-40 Cel		BOTTOM		R-PBGA-B24	3	1.95 V	1 mm	6 mm		134217728 bit	1.7 V						8 mm
47C04-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		512 words	5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel	512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm	3.9 mm		4096 bit	4.5 V		e3	40	260		4.9 mm	400 ns
IRMCF171TR	Infineon Technologies	MEMORY CIRCUIT																														3
MR256A08BCSO35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	75 mA	32768 words	3.3		3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.25 mm	85 Cel	32KX8	32K	-40 Cel		DUAL		R-PDSO-G32		3.6 V	2.54 mm	7.505 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.007 Amp	20.726 mm	35 ns
MR2A08AMYS35R	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	ASYNCHRONOUS	135 mA	262144 words	3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	256KX8	256K	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	2097152 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.02 Amp	18.41 mm	35 ns
S27KS0641DPBHV023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words	1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	8MX8	8M	-40 Cel		BOTTOM		R-PBGA-B24	3	1.95 V	1 mm	6 mm		67108864 bit	1.7 V						8 mm
SSDSC2BB240G701	Intel	MEMORY CIRCUIT	COMMERCIAL			RECTANGULAR			1	CMOS		NO LEAD	ASYNCHRONOUS		257698037760 words				8					70 Cel	240GX8	240G	0 Cel										2061584302080 bit
SSDSC2BB480G701	Intel	MEMORY CIRCUIT	COMMERCIAL						1	CMOS					515396075520 words				8					70 Cel	480GX8	480G	0 Cel										4123168604160 bit

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.