Other Function Memory ICs

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
47L16T-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		2048 words			EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	125 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm	3 mm		16384 bit	2.7 V		e3	40	260		4.4 mm	400 ns
AT88SC0104CA-SH	Microchip Technology	CRYPTO MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		128 words				3/3.3	8	SMALL OUTLINE	SOP8,.23	EEPROMs	1.27 mm	85 Cel		128X8	128	-40 Cel		DUAL	1	R-PDSO-G8		3.6 V	1.75 mm	3.9 mm	Not Qualified	1024 bit	2.7 V						4.9 mm	250 ns
CFS1000C	Broadcom	MEMORY CIRCUIT							1	CMOS			SYNCHRONOUS		5 words					12							5X12	5		TIN LEAD								Not Qualified	60 bit			e0	NOT SPECIFIED	NOT SPECIFIED
D2758	Intel	OTP ROM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE			1024 words	COMMON				8	IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	1KX8	1K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24					Not Qualified	8192 bit			e0					450 ns
DS28E80Q+T	Analog Devices	MEMORY CIRCUIT																												Matte Tin (Sn) - annealed				1								e3	30	260
H8BCS0UN0MCR-4EM	Sk Hynix	MEMORY CIRCUIT	OTHER	137	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		1.8			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX32	64M	-30 Cel		BOTTOM		R-PBGA-B137		1.95 V	1.2 mm	10.5 mm		2147483648 bit	1.7 V	ITS ALSO CONTAINS 4GBIT (256MBIT X16) NAND FLASH					13 mm
M27C512	Koa Speer Electronics
MR0A08BCYS35R	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	70 mA	131072 words		3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		128KX8	128K	-40 Cel		DUAL		R-PDSO-G44	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3 V					.007 Amp	18.41 mm	35 ns
MR0A16ACMA35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	165 mA	65536 words		3.3		3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		64KX16	64K	-40 Cel		BOTTOM		S-PBGA-B48		3.6 V	1.35 mm	8 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.012 Amp	8 mm	35 ns
MR25H256MDC	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	8	HSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SYNCHRONOUS		32768 words		3.3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG	SOLCC8,.25	SRAMs	1.27 mm	125 Cel		32KX8	32K	-40 Cel		DUAL		R-PDSO-N8		3.6 V	1.05 mm	5 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.00001 Amp	6 mm
MR2A16AMYS35R	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	ASYNCHRONOUS		262144 words		3.3			16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		256KX16	256K	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm		4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		18.41 mm
MR2A16AVMA35R	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		262144 words		3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.75 mm	105 Cel		256KX16	256K	-40 Cel		BOTTOM		S-PBGA-B48		3.6 V	1.35 mm	8 mm		4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
MR44V100AMAZAATL	Lapis Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		131072 words		3.3			8	SMALL OUTLINE, LOW PROFILE			1.27 mm	85 Cel		128KX8	128K	-40 Cel		DUAL		R-PDSO-G8		3.6 V	1.65 mm	3.9 mm		1048576 bit	1.8 V						4.9 mm
MR45V032AMAZBATL	Lapis Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		4096 words		3.3			8	SMALL OUTLINE, LOW PROFILE			1.27 mm	85 Cel		4KX8	4K	-40 Cel		DUAL		R-PDSO-G8		3.6 V	1.65 mm	3.9 mm		32768 bit	2.7 V						4.9 mm
MT29C4G48MAZBBAKS-48IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	137	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX8	512M	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B137		1.95 V	1 mm	10.5 mm		4294967296 bit	1.7 V	IT IS ALSO HAVING 2GBIT (X 32) LPDDR	e1	30	260		13 mm
MTFC16GLTDV-WT	Micron Technology		OTHER	169	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES				BALL							1.8/3.3,3/3.3		GRID ARRAY, FINE PITCH	BGA169,14X28,20	Other Memory ICs	.5 mm	85 Cel				-25 Cel		BOTTOM		R-PBGA-B169					Not Qualified	137438953472 bit
MTFC2GMTEA-WT	Micron Technology		OTHER	153	FBGA	SQUARE	PLASTIC/EPOXY	YES				BALL							1.8/3.3,3/3.3		GRID ARRAY, FINE PITCH	BGA153,14X14,20	Other Memory ICs	.5 mm	85 Cel				-25 Cel		BOTTOM		S-PBGA-B153					Not Qualified	17179869184 bit
MTFDHBL256TDP-1AT12AIYYTR	Micron Technology	MEMORY CIRCUIT
MTFDHBL512TDQ-1AT12ATYYTR	Micron Technology	MEMORY CIRCUIT
S27KL0641DABHB023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		8388608 words		3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		8MX8	8M	-40 Cel		BOTTOM		R-PBGA-B24	3	3.6 V	1 mm	6 mm		67108864 bit	2.7 V						8 mm
SSDSCKJB150G701	Intel	MEMORY CIRCUIT	COMMERCIAL			RECTANGULAR	UNSPECIFIED		1	CMOS			ASYNCHRONOUS		161061273600 words					8					70 Cel		150GX8	150G	0 Cel										1288490188800 bit
WSF512K32-27H2M	Microsemi	MEMORY CIRCUIT	MILITARY	66	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	ASYNCHRONOUS		524288 words		5			32	GRID ARRAY			2.54 mm	125 Cel		512KX32	512K	-55 Cel	GOLD	PERPENDICULAR		S-CPGA-P66		5.5 V	5.7 mm	35.2 mm	Not Qualified	16777216 bit	4.5 V	SRAM IS ORGANISED AS 512K X 32	e4				35.2 mm
AT88SC25616C-SU-T	Microchip Technology	CRYPTO MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		32768 words					8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel		32KX8	32K	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G8		5.5 V	1.75 mm	3.9 mm		262144 bit	2.7 V		e3				4.925 mm	35 ns
EMD3D256M08G1-150CBS1R	Everspin Technologies	MEMORY CIRCUIT	OTHER	78	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		1.5			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		32MX8	32M	0 Cel		BOTTOM		R-PBGA-B78		1.575 V	1.2 mm	10 mm		268435456 bit	1.425 V			NOT SPECIFIED	NOT SPECIFIED		13 mm
MR0A16AMA35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	155 mA	65536 words		3.3		3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		64KX16	64K	0 Cel		BOTTOM		S-PBGA-B48		3.6 V	1.35 mm	8 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.012 Amp	8 mm	35 ns
MTFC16GLTAM-WT	Micron Technology		OTHER	153	FBGA	SQUARE	PLASTIC/EPOXY	YES				BALL							1.8/3.3,3/3.3		GRID ARRAY, FINE PITCH	BGA153,14X14,20	Other Memory ICs	.5 mm	85 Cel				-25 Cel		BOTTOM		S-PBGA-B153					Not Qualified	137438953472 bit
MTFC32GLTDM-WT	Micron Technology		OTHER	153	FBGA	SQUARE	PLASTIC/EPOXY	YES				BALL							1.8/3.3,3/3.3		GRID ARRAY, FINE PITCH	BGA153,14X14,20	Other Memory ICs	.5 mm	85 Cel				-25 Cel		BOTTOM		S-PBGA-B153					Not Qualified	274877906944 bit
MTFDHBM1T0TDP-1AT12AIYYTR	Micron Technology	MEMORY CIRCUIT
S71KL512SC0BHV003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM		R-PBGA-B24	3		1 mm	6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8					8 mm
SAA4955HL	NXP Semiconductors	MEMORY CIRCUIT	COMMERCIAL	44	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	70 mA	245772 words		3.3		3.3	12	FLATPACK	QFP44,.47SQ,32	Other Memory ICs	.8 mm	70 Cel		245772X12	245772	0 Cel	Tin (Sn)	QUAD		S-PQFP-G44		3.6 V			Not Qualified	2949264 bit	3 V	IT ALSO REQUIRES 3 TO 5.5V SUPPLY	e3			.01 Amp		21 ns
SAA4955TJ	NXP Semiconductors	MEMORY CIRCUIT	COMMERCIAL	40	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SYNCHRONOUS	70 mA	245772 words		3.3		3.3	12	SMALL OUTLINE	SOJ40,.44	Other Memory ICs	1.27 mm	70 Cel		245772X12	245772	0 Cel	TIN	DUAL		R-PDSO-J40		3.6 V			Not Qualified	2949264 bit	3 V	IT ALSO REQUIRES 3 TO 5.5V SUPPLY	e3			.01 Amp		21 ns
SAA4955TJ/V1	NXP Semiconductors	MEMORY CIRCUIT	COMMERCIAL	40	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SYNCHRONOUS		245772 words		3.3			12	SMALL OUTLINE				70 Cel		245772X12	245772	0 Cel		DUAL		R-PDSO-J40		3.6 V			Not Qualified	2949264 bit	3 V
SSDPE2KE032T807	Intel	MEMORY CIRCUIT
THGBMHG6C1LBAIL	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL			8589934592 words					8	GRID ARRAY				85 Cel		8GX8	8G	-25 Cel		BOTTOM		R-PBGA-B153						68719476736 bit
AF512UDI-OEM	Atp Electronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD			536870912 words					8	UNCASED CHIP				85 Cel		512MX8	512M	-40 Cel		UPPER		X-XUUC-N						4294967296 bit
MR10Q010SCR	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	220 mA	131072 words		3.3		1.8,3.3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	70 Cel		128KX8	128K	0 Cel		DUAL		R-PDSO-G16		3.6 V	2.64 mm	7.52 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.005 Amp	10.34 mm
WSF128K16-37G1UM	Microsemi	MEMORY CIRCUIT	MILITARY	68	QFP	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		GULL WING	ASYNCHRONOUS		131072 words		5			16	FLATPACK			1.27 mm	125 Cel		128KX16	128K	-55 Cel		QUAD		S-CQFP-G68		5.5 V	3.56 mm	23.88 mm		2097152 bit	4.5 V	SRAM IS ORGANISED AS 128K X 32					23.88 mm
MR44V064BMAZAATL	Lapis Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		8192 words		3.3			8	SMALL OUTLINE, LOW PROFILE			1.27 mm	85 Cel		8KX8	8K	-40 Cel		DUAL		R-PDSO-G8		3.6 V	1.65 mm	3.9 mm		65536 bit	1.8 V						4.9 mm
KLMBG4GE4A-A001	Samsung	MEMORY CIRCUIT
AT88SC018-SU-CM-T	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		4096 words					1	SMALL OUTLINE	SOP8,.25		1.27 mm	85 Cel		4KX1	4K	-40 Cel	MATTE TIN	DUAL		R-PDSO-G8		3.6 V	1.75 mm	3.9 mm	Not Qualified	4096 bit	2.7 V		e3				4.925 mm
DS9093S	Analog Devices	MEMORY CIRCUIT				UNSPECIFIED	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED									SPECIAL SHAPE									TIN LEAD	UNSPECIFIED		X-XXSS-X					Not Qualified				e0
DS9093S+	Analog Devices	MEMORY CIRCUIT				UNSPECIFIED	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED									SPECIAL SHAPE									Matte Tin (Sn) - annealed	UNSPECIFIED		X-XXSS-X					Not Qualified				e3
CY8C20140-LDX2I	Cypress Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	16	VQCCN	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SYNCHRONOUS		2048 words		3			1	CHIP CARRIER, VERY THIN PROFILE			.5 mm	85 Cel		2KX1	2K	-40 Cel	NICKEL PALLADIUM GOLD	QUAD		S-XQCC-N16	3	5.25 V	.6 mm	3 mm	Not Qualified	2048 bit	2.4 V	SRAM IS ORGANISED AS 512MB	e4	20	260		3 mm
DS1213D	Maxim Integrated	MEMORY CIRCUIT	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE									IN-LINE			2.54 mm	70 Cel				0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28			11.94 mm	15.24 mm	Not Qualified				e0	20	240		40.64 mm
DS2405Z	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS		64 words				3/5	1	SMALL OUTLINE	SOT-223	SRAMs	2.3 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-G4	1	6 V	1.8 mm	3.5 mm	Not Qualified	64 bit	2.8 V		e0		245		6.5 mm
DS2405Z+	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS		64 words				3/5	1	SMALL OUTLINE	SOT-223	SRAMs	2.3 mm	85 Cel		64X1	64	-40 Cel	MATTE TIN	DUAL		R-PDSO-G4	1	6 V	1.8 mm	3.5 mm	Not Qualified	64 bit	2.8 V		e3	30	260		6.5 mm
S71PL127NB0HHW4U0	Spansion	MEMORY CIRCUIT	OTHER	64	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words		3	FLASH+PSRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA64,10X12, 32	Other Memory ICs	.8 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM		R-PBGA-B64			1.2 mm	8 mm	Not Qualified	134217728 bit		PSRAM ORGANISED AS 32M X 1		40	260		11.6 mm	70 ns
CY8C24033-24PVXI	Cypress Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	56	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		8192 words					1	SMALL OUTLINE, SHRINK PITCH			.635 mm	85 Cel		8KX1	8K	-40 Cel		DUAL		R-PDSO-G56		5.25 V	2.794 mm	7.5057 mm	Not Qualified	8192 bit	3 V						18.415 mm

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.