Other Function Memory ICs

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
DS1213B	Maxim Integrated	MEMORY CIRCUIT	COMMERCIAL	28	DIP		RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE											IN-LINE				2.54 mm	70 Cel					0 Cel	TIN LEAD		DUAL		R-PDIP-T28	1		11.94 mm			15.24 mm	Not Qualified					e0				35.56 mm
MTFDHAL3T8TDP-1AT1ZABYY	Micron Technology
TC528257J-70	Toshiba	VIDEO DRAM	COMMERCIAL	40	SOJ		RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		J BEND			160 mA	262144 words			5		5	8	SMALL OUTLINE	SOJ40,.44	Other Memory ICs		1.27 mm	70 Cel		256KX8	256K		0 Cel			DUAL		R-PDSO-J40							Not Qualified		2097152 bit						.01 Amp		70 ns
XC17S150XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP		RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	1040128 words		COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	1040128X1	1040128		0 Cel	TIN LEAD		DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		1040128 bit	3 V		e0	30	225	.00005 Amp	9.3599 mm
XC17S40PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP		RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	10 mA	329312 words		COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	329312X1	329312		-40 Cel	Tin/Lead (Sn85Pb15)		DUAL		R-PDIP-T8	1	5.5 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		329312 bit	4.5 V		e0	30	225	.00005 Amp	9.3599 mm
CT1000MX500SSD1	Micron Technology	MEMORY CIRCUIT	COMMERCIAL				RECTANGULAR		UNSPECIFIED		1	CMOS				ASYNCHRONOUS		1099511627776 words						8						70 Cel		1TX8	1T		0 Cel														8796093022208 bit				NOT SPECIFIED	NOT SPECIFIED
CY8C20142-SX1I	Cypress Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	8	SOP		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words			3			1	SMALL OUTLINE				1.27 mm	85 Cel		2KX1	2K		-40 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8	3	5.25 V	1.727 mm			3.9 mm	Not Qualified		2048 bit	2.4 V	SRAM IS ORGANISED AS 512MB	e4	20	260		4.889 mm
CY8C20180-LDX2I	Cypress Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	16	VQCCN		SQUARE		UNSPECIFIED	YES	1	CMOS		NO LEAD		SYNCHRONOUS		2048 words			3			1	CHIP CARRIER, VERY THIN PROFILE				.5 mm	85 Cel		2KX1	2K		-40 Cel	NICKEL PALLADIUM GOLD		QUAD		S-XQCC-N16	3	5.25 V	.6 mm			3 mm	Not Qualified		2048 bit	2.4 V	SRAM IS ORGANISED AS 512MB	e4	20	260		3 mm
MT29C4G48MAZBBAKB-48IT	Micron Technology	MEMORY CIRCUIT		168	VFBGA		SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		268435456 words			1.8	FLASH+LPDDR		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20			.5 mm	85 Cel		256MX16	256M		-40 Cel			BOTTOM		S-PBGA-B168		1.95 V	.8 mm			12 mm			4294967296 bit	1.7 V	IT IS ALSO HAVING 2GBIT (X 32) LPDDR		NOT SPECIFIED	NOT SPECIFIED		12 mm
MT29PZZZ8D5BKFTF-18W.95L	Micron Technology	MEMORY CIRCUIT	OTHER	162	VFBGA		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		134217728 words			3.3			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		128MX32	128M		-30 Cel			BOTTOM		R-PBGA-B162		3.6 V	1 mm			11.5 mm			4294967296 bit	2.7 V	ALSO ORGANISED AS 256M X 16					13 mm
MT42C4064Z-15	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	24	ZIP		RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			60 mA	65536 words			5		5	4	IN-LINE	ZIP24,.1	Other Memory ICs		1.27 mm	70 Cel		64KX4	64K		0 Cel	Tin/Lead (Sn/Pb)		ZIG-ZAG		R-PZIP-T24							Not Qualified		262144 bit			e0			.004 Amp		150 ns
MTFDDAK256TDL-1AW1ZABYY	Micron Technology	MEMORY CIRCUIT
TC518512FL-80	Toshiba		COMMERCIAL	32	SOP		RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		GULL WING			60 mA	524288 words	NO	COMMON	5		5	8	SMALL OUTLINE	SOP32,.56	Other Memory ICs		1.27 mm	70 Cel	3-STATE	512KX8	512K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)		DUAL		R-PDSO-G32							Not Qualified		4194304 bit			e0			.0002 Amp		80 ns
XC17S20PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP		RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	10 mA	178144 words		COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	178144X1	178144		0 Cel	Tin/Lead (Sn85Pb15)		DUAL		R-PDIP-T8	1	5.25 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		178144 bit	4.75 V		e0	30	225	.00005 Amp	9.3599 mm
5962H1321201VXC	Defense Logistics Agency	MEMORY CIRCUIT	AUTOMOTIVE	76	QFF		SQUARE	1M Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT		SYNCHRONOUS		1048576 words			3.3			16	FLATPACK	QFL76,.1.2SQ			1.27 mm	125 Cel		1MX16	1M		-40 Cel			QUAD		S-CQFP-F76		3.6 V	4.713 mm			29.21 mm	Qualified		16777216 bit	3 V						29.21 mm
MCM528128AJ10	Motorola
MCM6674L	Motorola		COMMERCIAL	18	DIP		RECTANGULAR		CERAMIC	NO		MOS		THROUGH-HOLE											IN-LINE	DIP18,.3	Other Memory ICs		2.54 mm	70 Cel					0 Cel	Tin/Lead (Sn/Pb)		DUAL		R-XDIP-T18							Not Qualified					e0
MR45V064BMAZAATL	Lapis Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	8	LSOP		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		8192 words			3.3			8	SMALL OUTLINE, LOW PROFILE				1.27 mm	85 Cel		8KX8	8K		-40 Cel			DUAL		R-PDSO-G8		3.6 V	1.65 mm			3.9 mm			65536 bit	1.8 V						4.9 mm
MT18VDDF12872DY-335F1	Micron Technology		COMMERCIAL	184	DIMM	8192	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		NO LEAD			5220 mA	134217728 words		COMMON	2.5		2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs		1.27 mm	70 Cel	3-STATE	128MX72	128M		0 Cel			DUAL		R-PDMA-N184					166 MHz		Not Qualified		9663676416 bit						.09 Amp		.7 ns
MT29C4G48MAYBBAKS-48IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	137	VFBGA		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		536870912 words			1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		512MX8	512M		-40 Cel	TIN SILVER COPPER		BOTTOM		R-PBGA-B137		1.95 V	1 mm			10.5 mm			4294967296 bit	1.7 V	IT IS ALSO HAVING 2GBIT (X 32) LPDDR	e1	30	260		13 mm
MT29C4G48MAZBAAKQ-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	168	VFBGA		SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		268435456 words			1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		256MX16	256M		-25 Cel			BOTTOM		S-PBGA-B168		1.95 V	.75 mm			12 mm			4294967296 bit	1.7 V	MOBILE LPDDR DEVICE ALSO AVAILABLE		NOT SPECIFIED	NOT SPECIFIED		12 mm
MT38W2011A901ZQXZI.X68	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	88	TFBGA		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		4194304 words						16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		4MX16	4M		-40 Cel			BOTTOM		R-PBGA-B88		1.95 V	1.2 mm			8 mm			67108864 bit	1.7 V	IT ALSO CONTAINS 16MBIT(1MBIT X 16) PSRAM					10 mm
MTFDDAK7T6QDE-2AV1ZABYY	Micron Technology	MEMORY CIRCUIT
NAND08GAH0FZC5E	Micron Technology		OTHER	153	FBGA		SQUARE		PLASTIC/EPOXY	YES		CMOS		BALL									1.8/3.3,3.3		GRID ARRAY, FINE PITCH	BGA153,14X14,20	Other Memory ICs		.5 mm	85 Cel					-25 Cel			BOTTOM		S-PBGA-B153							Not Qualified		8589934592 bit
SSDSC2BB480G7	Intel	MEMORY CIRCUIT
SSDSCKJB150G7	Intel	MEMORY CIRCUIT	COMMERCIAL				RECTANGULAR		UNSPECIFIED		1	CMOS				ASYNCHRONOUS		161061273600 words						8						70 Cel		150GX8	150G		0 Cel														1288490188800 bit
27C64	Thomson-csf Compsants Specific
AT29C1024	Microchip Technology	MEMORY CIRCUIT		44			UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		UNSPECIFIED		ASYNCHRONOUS		65536 words			5	EPROM+FLASH		16								64KX16	64K					QUAD		X-XQCC-X44		5.5 V							1048576 bit	4.5 V							70 ns
AT88SC0104C-SU	Atmel	MEMORY CIRCUIT	INDUSTRIAL	8	SOP		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	1024 words			3.3		3/5	1	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		1KX1	1K		-40 Cel	MATTE TIN	1011CCCC	DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles		3.9 mm	Not Qualified	I2C	1024 bit	2.7 V		e3			.0001 Amp	4.925 mm
C1702A	Intel		COMMERCIAL	24	DIP		RECTANGULAR		CERAMIC	NO		MOS		THROUGH-HOLE				256 words		COMMON				8	IN-LINE	DIP24,.6	Other Memory ICs		2.54 mm	70 Cel	3-STATE	256X8	256		0 Cel	Tin/Lead (Sn/Pb)		DUAL		R-XDIP-T24							Not Qualified		2048 bit			e0					1000 ns
CY15B004J-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words			3.3			8	SMALL OUTLINE				1.27 mm	85 Cel		512X8	512		-40 Cel	PURE TIN		DUAL		R-PDSO-G8	3	3.65 V	1.727 mm			3.8985 mm			4096 bit	2.7 V				260		4.889 mm
MM5262N	National Semiconductor		COMMERCIAL	22	DIP	32	RECTANGULAR		PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE				2048 words		SEPARATE				1	IN-LINE	DIP22,.4	Other Memory ICs		2.54 mm	70 Cel		2KX1	2K		0 Cel	Tin/Lead (Sn/Pb)		DUAL		R-PDIP-T22							Not Qualified		2048 bit			e0
MR45V200BRAZAARL	Lapis Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	8	DIP		RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS		262144 words			3.3			8	IN-LINE				2.54 mm	85 Cel		256KX8	256K		-40 Cel			DUAL		R-PDIP-T8		3.6 V				7.62 mm			2097152 bit	2.7 V						9.2 mm
MT29C1G12MAAJVAMD-5ITTR	Micron Technology	MEMORY CIRCUIT																																																			NOT SPECIFIED	NOT SPECIFIED
MT29C4G96MAZAPCJG-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA		SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		268435456 words			1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		256MX16	256M		-40 Cel	TIN SILVER COPPER		BOTTOM		S-PBGA-B168		1.95 V	.9 mm			12 mm			4294967296 bit	1.7 V		e1				12 mm
MT29GZ6A6BPIET-046AIT.112	Micron Technology	MEMORY CIRCUIT		149	VFBGA		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		536870912 words			1.8	FLASH+LPDDR		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA149,14X16,20			.5 mm	85 Cel		512MX16	512M		-40 Cel			BOTTOM		R-PBGA-B149		1.95 V	1 mm			8 mm			8589934592 bit	1.7 V						9.5 mm	3.5 ns
MT29GZ6A6BPIET-53AAT.112	Micron Technology	MEMORY CIRCUIT		149	VFBGA		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		536870912 words			1.8	FLASH+LPDDR		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA149,14X16,20			.5 mm	105 Cel		512MX16	512M		-40 Cel			BOTTOM		R-PBGA-B149		1.95 V	1 mm			8 mm			8589934592 bit	1.7 V						9.5 mm	3.5 ns
MTFDDAK1T9QDE-2AV1ZABYY	Micron Technology	MEMORY CIRCUIT
MTFDDAK512TDL-1AW12ABYY	Micron Technology	MEMORY CIRCUIT
MTFDHAL15T3TDP-1AT1ZABYY	Micron Technology
MTFDHBL064TDP-1AT12AIYY	Micron Technology	MEMORY CIRCUIT
NMB1XXD128GPSU4	Intel	MEMORY CIRCUIT	OTHER		DIMM		RECTANGULAR		UNSPECIFIED	NO	1	CMOS		NO LEAD				137438953472 words						8						85 Cel		128GX8	128G		0 Cel			DUAL		R-XDMA-N									1099511627776 bit
NP8P128AE3T1760E	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	64	TBGA		RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		16777216 words			3			8	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		16MX8	16M		-40 Cel			BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			8 mm			134217728 bit	2.7 V						10 mm
P1103	Intel		COMMERCIAL	18	DIP	32	RECTANGULAR		PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE				1024 words		SEPARATE				1	IN-LINE	DIP18,.3	Other Memory ICs		2.54 mm	70 Cel		1KX1	1K		0 Cel	Tin/Lead (Sn/Pb)		DUAL		R-PDIP-T18							Not Qualified		1024 bit			e0					300 ns
S71GL032NA0BHW0K0	Spansion
SSDSA2BW160G3	Intel	MEMORY CIRCUIT	COMMERCIAL				UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		171798691840 words						8	MICROELECTRONIC ASSEMBLY					70 Cel		160GX8	160G		0 Cel			UNSPECIFIED		X-XXMA-N									1374389534720 bit
SSDSA2BW160G301	Intel	MEMORY CIRCUIT	COMMERCIAL				UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		171798691840 words						8	MICROELECTRONIC ASSEMBLY					70 Cel		160GX8	160G		0 Cel			UNSPECIFIED		X-XXMA-N									1374389534720 bit
TC518128AFL-80	Toshiba		COMMERCIAL	32	SOP		RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		GULL WING			70 mA	131072 words		COMMON	5		5	8	SMALL OUTLINE	SOP32,.5	Other Memory ICs		1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)		DUAL		R-PDSO-G32							Not Qualified		1048576 bit			e0			.0002 Amp		80 ns

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.