Other Function Memory ICs

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
RP-SMLE04DA1	Panasonic	MEMORY CIRCUIT	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		4294967296 words					8	UNCASED CHIP				85 Cel		4GX8	4G	-25 Cel		UPPER		R-XUUC-N							34359738368 bit				NOT SPECIFIED	NOT SPECIFIED
SSDPE2KE032T801	Intel	MEMORY CIRCUIT	COMMERCIAL						1	CMOS				3518437208883.2 words					8					55 Cel		3.2T X 8	3.2T	0 Cel											28147497671065.6 bit
AT88SC0204C-MJ	Microchip Technology	CRYPTO MEMORY	COMMERCIAL	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SYNCHRONOUS		256 words					8	UNCASED CHIP	DIE OR CHIP			70 Cel		256X8	256	0 Cel	Nickel/Gold (Ni/Au)	UPPER	1	R-XUUC-N8	1	5.5 V					2048 bit	2.7 V		e4					35 ns
AT88SC25616C-SU	Microchip Technology	CRYPTO MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		32768 words					8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel		32KX8	32K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.75 mm		3.9 mm		262144 bit	2.7 V		e3				4.925 mm	35 ns
M24SR64-YMC6T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS		8192 words		3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel		8KX8	8K	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-N8	1	5.5 V	.6 mm		2 mm		65536 bit	2.7 V		e4	30	260		3 mm
47C04-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	125 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm		3.9 mm		4096 bit	4.5 V		e3	40	260		4.9 mm	400 ns
MR0A08BYS35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS	65 mA	131072 words		3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		128KX8	128K	0 Cel		DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V					.007 Amp	18.41 mm	35 ns
MR10Q010CMB	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		131072 words		3.3			8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		128KX8	128K	-40 Cel		BOTTOM		R-PBGA-B24	3	3.6 V	1.35 mm		6 mm		1048576 bit	3 V						8 mm
MR256D08BMA45	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	65 mA	32768 words		3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	70 Cel		32KX8	32K	0 Cel		BOTTOM		S-PBGA-B48		3.6 V	1.35 mm		8 mm	Not Qualified	262144 bit	3 V			40	260	.008 Amp	8 mm	45 ns
ST25DV04K-JFR6L3	STMicroelectronics	MEMORY CIRCUIT																																									NOT SPECIFIED	NOT SPECIFIED
XC17S30PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	10 mA	247968 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	247968X1	247968	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL		R-PDIP-T8	1	5.5 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	247968 bit	4.5 V		e0	30	225	.00005 Amp	9.3599 mm
AF4GUDI-OEM	Atp Electronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD			4294967296 words					8	UNCASED CHIP				85 Cel		4GX8	4G	-40 Cel		UPPER		X-XUUC-N							34359738368 bit
MT29C4G48MAZBAAKQ-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	Other Memory ICs	.5 mm	85 Cel		256MX16	256M	-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B168		1.9 V	.75 mm		12 mm	Not Qualified	4294967296 bit	1.7 V		e1				12 mm	25 ns
47C04T-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	125 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm		3 mm		4096 bit	4.5 V		e3	40	260		4.4 mm	400 ns
47C04T-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm		3.9 mm		4096 bit	4.5 V		e3	40	260		4.9 mm	400 ns
47L04-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		512 words			EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	125 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm		3 mm		4096 bit	2.7 V		e3	40	260		4.4 mm	400 ns
AT88SC25616C-MJ	Microchip Technology	CRYPTO MEMORY	COMMERCIAL	8	XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS		32768 words					8	MICROELECTRONIC ASSEMBLY	MODULE,8LEAD,.46			70 Cel		32KX8	32K	0 Cel	Nickel/Gold (Ni/Au)	UNSPECIFIED	1	R-XXMA-X8		5.5 V					262144 bit	2.7 V		e4					35 ns
AT88SC25616C-MJTG	Microchip Technology	CRYPTO MEMORY	COMMERCIAL	8	XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS		32768 words					8	MICROELECTRONIC ASSEMBLY	MODULE,8LEAD,.46			70 Cel		32KX8	32K	0 Cel	MATTE TIN	UNSPECIFIED	1	R-XXMA-X8		5.5 V					262144 bit	2.7 V							35 ns
DS2411X	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	.1 mA	64 words				2/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4(UNSPEC)	Other Memory ICs		85 Cel		64X1	64	-40 Cel		BOTTOM		R-PBGA-B4	1	5.25 V	.59 mm		.69 mm	Not Qualified	64 bit	1.5 V				245	.000001 Amp	1.09 mm
M24SR64-YDW8T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		65536 words					1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	105 Cel		64KX1	64K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.2 mm		2.9 mm		65536 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		4.3 mm
M24SR64-YMN8T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		65536 words					1	SMALL OUTLINE			1.27 mm	105 Cel		64KX1	64K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.75 mm		3.9 mm		65536 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		4.9 mm
M24SR64-YSB12I/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SYNCHRONOUS		8192 words		3.3			8	UNCASED CHIP				85 Cel		8KX8	8K	-40 Cel		UPPER		X-XUUC-N		5.5 V					65536 bit	2.7 V
M24SR64-YSG12I/2	STMicroelectronics	MEMORY CIRCUIT			DIE	RECTANGULAR		YES	1	CMOS		SYNCHRONOUS		8192 words		3.3			8	UNCASED CHIP	DIE OR CHIP					8KX8	8K			UNSPECIFIED		R-XUUC-N		5.5 V					65536 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED
MR0A08BMA35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	65 mA	131072 words		3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		128KX8	128K	0 Cel		BOTTOM		S-PBGA-B48	3	3.6 V	1.35 mm		8 mm	Not Qualified	1048576 bit	3 V					.007 Amp	8 mm	35 ns
MT29C8G96MAZBADKD-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	137	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		1.8			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX32	64M	-25 Cel		BOTTOM		R-PBGA-B137		1.95 V	1.1 mm		10.5 mm		2147483648 bit	1.7 V	ALSO ORGANISED AS 128M X 16		NOT SPECIFIED	NOT SPECIFIED		13 mm
MT29GZ5A5BPGGA-046IT.87J	Micron Technology	MEMORY CIRCUIT		149	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		1.8	FLASH+LPDDR		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA149,14X16,20		.5 mm	85 Cel		256MX16	256M	-40 Cel		BOTTOM		R-PBGA-B149		1.95 V	.8 mm		8 mm		4294967296 bit	1.7 V						9.5 mm
MT29PZZZ4D4BKEPK-18W.94H	Micron Technology	MEMORY CIRCUIT
47C04-I/ST	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	85 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm		3 mm		4096 bit	4.5 V		e3	40	260		4.4 mm	400 ns
M30162040108X0IWAY	Renesas Electronics	MEMORY CIRCUIT		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS		2097152 words		3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		1.27 mm	85 Cel		2MX8	2M	-40 Cel	TIN	DUAL		R-PDSO-N8	3	3.6 V	.8 mm		5 mm		16777216 bit	2.7 V		e3		260		6 mm
MR0A16AYS35R	Freescale Semiconductor	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS	155 mA	65536 words		3.3		3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		64KX16	64K	0 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e3	40	260	.028 Amp	18.41 mm	35 ns
MR2A16AVYS35R	Freescale Semiconductor	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words		3.3		3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		256KX16	256K	0 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	40	260	.028 Amp	18.41 mm	35 ns
MT29C4G96MAZBACJG-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	168	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	Other Memory ICs	.5 mm	85 Cel		256MX16	256M	-25 Cel		BOTTOM		S-PBGA-B168		1.95 V	.9 mm		12 mm	Not Qualified	4294967296 bit	1.7 V	MOBILE LPDDR DEVICE ALSO AVAILABLE		NOT SPECIFIED	NOT SPECIFIED		12 mm	25 ns
ST25DV04K-JFR6U3	STMicroelectronics	MEMORY CIRCUIT																																									NOT SPECIFIED	NOT SPECIFIED
CY15B108QN-20LPXCES	Infineon Technologies	MEMORY CIRCUIT	COMMERCIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS		1048576 words		3.3			8	SMALL OUTLINE, VERY THIN PROFILE			.65 mm	70 Cel		1MX8	1M	0 Cel		DUAL		R-PDSO-N8		3.6 V	.55 mm		3.23 mm		8388608 bit	1.8 V						3.28 mm
FM25L256-GC	Infineon Technologies
M30082040108X0PWAY	Renesas Electronics	MEMORY CIRCUIT		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS		1048576 words		3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		1.27 mm	105 Cel		1MX8	1M	-40 Cel	TIN	DUAL		R-PDSO-N8	3	3.6 V	.8 mm		5 mm		8388608 bit	2.7 V		e3		260		6 mm
MB85AS4MTPF-G-BCERE1	Fujitsu	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		3.3			8	SMALL OUTLINE	SOP8,.3		1.27 mm	85 Cel		512KX8	512K	-40 Cel		DUAL		R-PDSO-G8		3.6 V	1.73 mm		5.3 mm		4194304 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED		5.85 mm
MR25H256ACDFR	Everspin Technologies	SPI BUS SERIAL EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SYNCHRONOUS		32768 words		3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			1.27 mm	85 Cel		32KX8	32K	-40 Cel		DUAL		R-PDSO-N8	3	3.6 V	.9 mm		5 mm		262144 bit	2.7 V						6 mm
MT38W2011AA033JZZI.X68	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	52	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM		R-PBGA-B52		1.95 V	1.2 mm		4 mm		67108864 bit	1.7 V	IT ALSO CONTAINS 16MBIT(1MBIT X 16) PSRAM					6 mm
MT38W2021A902ZQXZI.X69	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words					16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM		R-PBGA-B88		1.95 V	1.2 mm		8 mm		67108864 bit	1.7 V	IT ALSO CONTAINS 32MBIT(2MBIT X 16) PSRAM					10 mm
MT43A4G40200NFA-S15:A	Micron Technology	MEMORY CIRCUIT	OTHER	896	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		4294967296 words		1.2			4	GRID ARRAY			1 mm	105 Cel		4GX4	4G	0 Cel		BOTTOM		S-PBGA-B896		1.26 V	4.2 mm		31 mm		17179869184 bit	1.14 V	IT ALSO OPERATES AT LOGIC OPERATING TEMPERATURE 0 TO 110 DEG CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED		31 mm
MTFDHBL128TDP-1AT12AIYYTR	Micron Technology	MEMORY CIRCUIT
MTFDHBM1T0TDQ-1AT12ATYYTR	Micron Technology	MEMORY CIRCUIT
NTE74LS324	Nte Electronics
NTE74LS327	Nte Electronics
S27KS0641DPBHI020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		8MX8	8M	-40 Cel		BOTTOM		R-PBGA-B24	3	1.95 V	1 mm		6 mm		67108864 bit	1.7 V						8 mm
THGAF8T0T43BAIR	Toshiba	MEMORY CIRCUIT
47C04-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	125 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm		3 mm		4096 bit	4.5 V		e3	40	260		4.4 mm	400 ns

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.