Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Length | Maximum Access Time | Programming Voltage (V) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Xilinx |
CONFIGURATION MEMORY |
COMMERCIAL |
20 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
18144 words |
COMMON |
5 |
5 |
1 |
CHIP CARRIER |
LDCC20,.4SQ |
OTP ROMs |
1.27 mm |
70 Cel |
3-STATE |
18144X1 |
18144 |
0 Cel |
TIN LEAD |
QUAD |
S-PQCC-J20 |
3 |
5 MHz |
Not Qualified |
e0 |
30 |
225 |
15 |
||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
MILITARY |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
10 mA |
65536 words |
COMMON |
5 |
5 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
125 Cel |
3-STATE |
64KX1 |
64K |
-55 Cel |
DUAL |
R-XDIP-T8 |
2.5 MHz |
Not Qualified |
65536 bit |
.0005 Amp |
|||||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
INDUSTRIAL |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
5 mA |
65536 words |
COMMON |
3.3 |
3.3 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
64KX1 |
64K |
-40 Cel |
DUAL |
R-XDIP-T8 |
2.5 MHz |
Not Qualified |
65536 bit |
.0015 Amp |
|||||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
INDUSTRIAL |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
10 mA |
131072 words |
COMMON |
5 |
5 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
128KX1 |
128K |
-40 Cel |
DUAL |
R-XDIP-T8 |
12.5 MHz |
Not Qualified |
131072 bit |
.00005 Amp |
|||||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
INDUSTRIAL |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
5 mA |
131072 words |
COMMON |
3.3 |
3.3 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
128KX1 |
128K |
-40 Cel |
DUAL |
R-XDIP-T8 |
10 MHz |
Not Qualified |
131072 bit |
.00005 Amp |
|||||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
INDUSTRIAL |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
5 mA |
18144 words |
COMMON |
3.3 |
3.3 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
18144X1 |
18144 |
-40 Cel |
DUAL |
R-XDIP-T8 |
2.5 MHz |
Not Qualified |
.0015 Amp |
||||||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
MILITARY |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
5 mA |
18144 words |
COMMON |
3.3 |
3.3 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
125 Cel |
3-STATE |
18144X1 |
18144 |
-55 Cel |
DUAL |
R-XDIP-T8 |
2.5 MHz |
Not Qualified |
.0015 Amp |
||||||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
INDUSTRIAL |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
5 mA |
262144 words |
COMMON |
3.3 |
3.3 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
256KX1 |
256K |
-40 Cel |
DUAL |
R-XDIP-T8 |
10 MHz |
Not Qualified |
262144 bit |
.00005 Amp |
|||||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
COMMERCIAL |
20 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
5 mA |
65536 words |
COMMON |
3.3 |
3.3 |
1 |
CHIP CARRIER |
LDCC20,.4SQ |
OTP ROMs |
1.27 mm |
70 Cel |
3-STATE |
64KX1 |
64K |
0 Cel |
QUAD |
S-PQCC-J20 |
2.5 MHz |
Not Qualified |
65536 bit |
.00005 Amp |
|||||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
5 mA |
131072 words |
COMMON |
3.3 |
3.3 |
1 |
SMALL OUTLINE |
SOP8,.25 |
OTP ROMs |
1.27 mm |
85 Cel |
3-STATE |
128KX1 |
128K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G8 |
3 |
10 MHz |
Not Qualified |
131072 bit |
e0 |
30 |
225 |
.00005 Amp |
||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
INDUSTRIAL |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
10 mA |
262144 words |
COMMON |
5 |
5 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
256KX1 |
256K |
-40 Cel |
DUAL |
R-XDIP-T8 |
12 MHz |
Not Qualified |
262144 bit |
.00005 Amp |
|||||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
COMMERCIAL |
20 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
10 mA |
65536 words |
COMMON |
5 |
5 |
1 |
CHIP CARRIER |
LDCC20,.4SQ |
OTP ROMs |
1.27 mm |
70 Cel |
3-STATE |
64KX1 |
64K |
0 Cel |
QUAD |
S-PQCC-J20 |
10 MHz |
Not Qualified |
65536 bit |
.00005 Amp |
|||||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
MILITARY |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
5 mA |
131072 words |
COMMON |
3.3 |
3.3 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
125 Cel |
3-STATE |
128KX1 |
128K |
-55 Cel |
DUAL |
R-XDIP-T8 |
10 MHz |
Not Qualified |
131072 bit |
.00005 Amp |
|||||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
MILITARY |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
5 mA |
262144 words |
COMMON |
3.3 |
3.3 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
125 Cel |
3-STATE |
256KX1 |
256K |
-55 Cel |
DUAL |
R-XDIP-T8 |
10 MHz |
Not Qualified |
262144 bit |
.00005 Amp |
|||||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
MILITARY |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
10 mA |
131072 words |
COMMON |
5 |
5 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
125 Cel |
3-STATE |
128KX1 |
128K |
-55 Cel |
DUAL |
R-XDIP-T8 |
12.5 MHz |
Not Qualified |
131072 bit |
.00005 Amp |
||||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
MILITARY |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
5 mA |
262144 words |
COMMON |
3.3 |
3.3 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
125 Cel |
3-STATE |
256KX1 |
256K |
-55 Cel |
DUAL |
R-XDIP-T8 |
10 MHz |
Not Qualified |
262144 bit |
.00005 Amp |
||||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
MILITARY |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
10 mA |
262144 words |
COMMON |
5 |
5 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
125 Cel |
3-STATE |
256KX1 |
256K |
-55 Cel |
DUAL |
R-XDIP-T8 |
12 MHz |
Not Qualified |
262144 bit |
.00005 Amp |
||||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
MILITARY |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
5 mA |
131072 words |
COMMON |
3.3 |
3.3 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
125 Cel |
3-STATE |
128KX1 |
128K |
-55 Cel |
DUAL |
R-XDIP-T8 |
10 MHz |
Not Qualified |
131072 bit |
.00005 Amp |
||||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
INDUSTRIAL |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
10 mA |
65536 words |
COMMON |
5 |
5 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
64KX1 |
64K |
-40 Cel |
DUAL |
R-XDIP-T8 |
2.5 MHz |
Not Qualified |
65536 bit |
.0015 Amp |
|||||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
INDUSTRIAL |
20 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
5 mA |
65536 words |
COMMON |
3.3 |
3.3 |
1 |
CHIP CARRIER |
LDCC20,.4SQ |
OTP ROMs |
1.27 mm |
85 Cel |
3-STATE |
64KX1 |
64K |
-40 Cel |
QUAD |
S-PQCC-J20 |
2.5 MHz |
Not Qualified |
65536 bit |
.00005 Amp |
|||||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
INDUSTRIAL |
20 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
10 mA |
36288 words |
COMMON |
5 |
5 |
1 |
CHIP CARRIER |
LDCC20,.4SQ |
OTP ROMs |
1.27 mm |
85 Cel |
3-STATE |
36288X1 |
36288 |
-40 Cel |
TIN LEAD |
QUAD |
S-PQCC-J20 |
3 |
2.5 MHz |
Not Qualified |
e0 |
30 |
225 |
.0005 Amp |
15 |
||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
MILITARY |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
10 mA |
36288 words |
COMMON |
5 |
5 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
125 Cel |
3-STATE |
36288X1 |
36288 |
-55 Cel |
DUAL |
R-XDIP-T8 |
2.5 MHz |
Not Qualified |
.0005 Amp |
21 |
|||||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
INDUSTRIAL |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
10 mA |
36288 words |
COMMON |
5 |
5 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
36288X1 |
36288 |
-40 Cel |
DUAL |
R-XDIP-T8 |
2.5 MHz |
Not Qualified |
.0005 Amp |
21 |
|||||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
INDUSTRIAL |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
10 mA |
18144 words |
COMMON |
5 |
5 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
18144X1 |
18144 |
-40 Cel |
DUAL |
R-XDIP-T8 |
5 MHz |
Not Qualified |
.0015 Amp |
||||||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
MILITARY |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
10 mA |
36288 words |
COMMON |
5 |
5 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
125 Cel |
3-STATE |
36288X1 |
36288 |
-55 Cel |
DUAL |
R-XDIP-T8 |
5 MHz |
Not Qualified |
.0015 Amp |
|||||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
COMMERCIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
10 mA |
262144 words |
COMMON |
5 |
5 |
1 |
SMALL OUTLINE |
SOP8,.25 |
OTP ROMs |
1.27 mm |
70 Cel |
3-STATE |
256KX1 |
256K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G8 |
3 |
12 MHz |
Not Qualified |
262144 bit |
e0 |
30 |
225 |
.00005 Amp |
||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
INDUSTRIAL |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
10 mA |
65536 words |
COMMON |
5 |
5 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
64KX1 |
64K |
-40 Cel |
DUAL |
R-XDIP-T8 |
2.5 MHz |
Not Qualified |
65536 bit |
.0005 Amp |
|||||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
INDUSTRIAL |
20 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
10 mA |
65536 words |
COMMON |
5 |
5 |
1 |
CHIP CARRIER |
LDCC20,.4SQ |
OTP ROMs |
1.27 mm |
85 Cel |
3-STATE |
64KX1 |
64K |
-40 Cel |
QUAD |
S-PQCC-J20 |
10 MHz |
Not Qualified |
65536 bit |
.00005 Amp |
|||||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
10 mA |
131072 words |
COMMON |
5 |
5 |
1 |
SMALL OUTLINE |
SOP8,.25 |
OTP ROMs |
1.27 mm |
85 Cel |
3-STATE |
128KX1 |
128K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G8 |
3 |
12.5 MHz |
Not Qualified |
131072 bit |
e0 |
30 |
225 |
.00005 Amp |
||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
MILITARY |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
10 mA |
18144 words |
COMMON |
5 |
5 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
125 Cel |
3-STATE |
18144X1 |
18144 |
-55 Cel |
DUAL |
R-XDIP-T8 |
5 MHz |
Not Qualified |
.0015 Amp |
|||||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
COMMERCIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
5 mA |
262144 words |
COMMON |
3.3 |
3.3 |
1 |
SMALL OUTLINE |
SOP8,.25 |
OTP ROMs |
1.27 mm |
70 Cel |
3-STATE |
256KX1 |
256K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G8 |
3 |
10 MHz |
Not Qualified |
262144 bit |
e0 |
30 |
225 |
.00005 Amp |
||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
COMMERCIAL |
8 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
18144 words |
COMMON |
5 |
5 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
18144X1 |
18144 |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T8 |
1 |
5 MHz |
Not Qualified |
e0 |
30 |
225 |
15 |
||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
INDUSTRIAL |
8 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
10 mA |
65536 words |
COMMON |
5 |
5 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
64KX1 |
64K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T8 |
1 |
2.5 MHz |
Not Qualified |
65536 bit |
e0 |
30 |
225 |
.0005 Amp |
||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
INDUSTRIAL |
20 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
10 mA |
65536 words |
COMMON |
5 |
5 |
1 |
CHIP CARRIER |
LDCC20,.4SQ |
OTP ROMs |
1.27 mm |
85 Cel |
3-STATE |
64KX1 |
64K |
-40 Cel |
TIN LEAD |
QUAD |
S-PQCC-J20 |
3 |
2.5 MHz |
Not Qualified |
65536 bit |
e0 |
30 |
225 |
.0005 Amp |
||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
MILITARY |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
10 mA |
18144 words |
COMMON |
5 |
5 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
125 Cel |
3-STATE |
18144X1 |
18144 |
-55 Cel |
DUAL |
R-XDIP-T8 |
5 MHz |
Not Qualified |
.0015 Amp |
||||||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
INDUSTRIAL |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
10 mA |
36288 words |
COMMON |
5 |
5 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
36288X1 |
36288 |
-40 Cel |
DUAL |
R-XDIP-T8 |
5 MHz |
Not Qualified |
.0015 Amp |
|||||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
MILITARY |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
5 mA |
18144 words |
COMMON |
3.3 |
3.3 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
125 Cel |
3-STATE |
18144X1 |
18144 |
-55 Cel |
DUAL |
R-XDIP-T8 |
2.5 MHz |
Not Qualified |
.0015 Amp |
|||||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
MILITARY |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
5 mA |
65536 words |
COMMON |
3.3 |
3.3 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
125 Cel |
3-STATE |
64KX1 |
64K |
-55 Cel |
DUAL |
R-XDIP-T8 |
2.5 MHz |
Not Qualified |
65536 bit |
.0015 Amp |
||||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
COMMERCIAL |
20 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
10 mA |
65536 words |
COMMON |
5 |
5 |
1 |
CHIP CARRIER |
LDCC20,.4SQ |
OTP ROMs |
1.27 mm |
70 Cel |
3-STATE |
64KX1 |
64K |
0 Cel |
TIN LEAD |
QUAD |
S-PQCC-J20 |
3 |
2.5 MHz |
Not Qualified |
65536 bit |
e0 |
30 |
225 |
.0005 Amp |
||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
MILITARY |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
5 mA |
65536 words |
COMMON |
3.3 |
3.3 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
125 Cel |
3-STATE |
64KX1 |
64K |
-55 Cel |
DUAL |
R-XDIP-T8 |
2.5 MHz |
Not Qualified |
65536 bit |
.0015 Amp |
|||||||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
COMMERCIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
5 mA |
131072 words |
COMMON |
3.3 |
3.3 |
1 |
SMALL OUTLINE |
SOP8,.25 |
OTP ROMs |
1.27 mm |
70 Cel |
3-STATE |
128KX1 |
128K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G8 |
3 |
10 MHz |
Not Qualified |
131072 bit |
e0 |
30 |
225 |
.00005 Amp |
||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
5 mA |
262144 words |
COMMON |
3.3 |
3.3 |
1 |
SMALL OUTLINE |
SOP8,.25 |
OTP ROMs |
1.27 mm |
85 Cel |
3-STATE |
256KX1 |
256K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G8 |
3 |
10 MHz |
Not Qualified |
262144 bit |
e0 |
30 |
225 |
.00005 Amp |
||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
COMMERCIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
10 mA |
131072 words |
COMMON |
5 |
5 |
1 |
SMALL OUTLINE |
SOP8,.25 |
OTP ROMs |
1.27 mm |
70 Cel |
3-STATE |
128KX1 |
128K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G8 |
3 |
12.5 MHz |
Not Qualified |
131072 bit |
e0 |
30 |
225 |
.00005 Amp |
||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
10 mA |
262144 words |
COMMON |
5 |
5 |
1 |
SMALL OUTLINE |
SOP8,.25 |
OTP ROMs |
1.27 mm |
85 Cel |
3-STATE |
256KX1 |
256K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G8 |
3 |
12 MHz |
Not Qualified |
262144 bit |
e0 |
30 |
225 |
.00005 Amp |
||||||||||||||||||||||
Xilinx |
CONFIGURATION MEMORY |
INDUSTRIAL |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
10 mA |
36288 words |
COMMON |
5 |
5 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
36288X1 |
36288 |
-40 Cel |
DUAL |
R-XDIP-T8 |
2.5 MHz |
Not Qualified |
.0005 Amp |
15 |
|||||||||||||||||||||||||||
Altera |
CONFIGURATION MEMORY |
MILITARY |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
212942 words |
COMMON |
5 |
5 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
125 Cel |
3-STATE |
212942X1 |
212942 |
-55 Cel |
TIN LEAD |
DUAL |
R-XDIP-T8 |
6 MHz |
Not Qualified |
e0 |
220 |
OTP ROM, or One-Time Programmable Read-Only Memory, is a type of non-volatile computer memory that is programmed once and cannot be reprogrammed. OTP ROM is used to store data that needs to be permanently stored and cannot be changed or updated in the future.
OTP ROM is created using a process similar to that used to manufacture Mask ROM. However, instead of programming the memory during the manufacturing process, OTP ROM is programmed after the manufacturing process, but before it is delivered to the customer. This allows the customer to program the memory with the data that they need to store permanently.
OTP ROM is commonly used in devices such as microcontrollers, smart cards, and other electronic devices that require permanent storage of data. It is ideal for storing critical data, such as system settings, encryption keys, and other sensitive information that needs to be permanently stored and cannot be changed or updated in the future.