8 OTP ROM 52

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
DS2502S	Maxim Integrated	OTP ROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS		128 words	COMMON	5	3/5	8	SMALL OUTLINE	SOP8,.25		Other Memory ICs		1.27 mm	85 Cel		128X8	128	-40 Cel	TIN LEAD	DUAL		R-PDSO-G8		6 V	1.75 mm			3.9 mm	Not Qualified	1024 bit	2.8 V	MICROLAN COMPATIBLE	e0		245		4.9 mm	15000 ns
DS2502S+	Analog Devices	OTP ROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS		128 words	COMMON	5	3/5	8	SMALL OUTLINE	SOP8,.25		Other Memory ICs		1.27 mm	85 Cel		128X8	128	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G8	1	6 V	1.75 mm			3.9 mm	Not Qualified	1024 bit	2.8 V	MICROLAN COMPATIBLE	e3	30	260		4.9 mm	15000 ns
DS2506S	Maxim Integrated	OTP ROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		GULL WING	SERIAL	ASYNCHRONOUS		65536 words	COMMON	5	3/5	1	SMALL OUTLINE	SOP8,.3		Other Memory ICs		1.27 mm	85 Cel		64KX1	64K	-40 Cel	TIN LEAD	DUAL		R-PDSO-G8		6 V	2.13 mm			5.285 mm	Not Qualified	65536 bit	2.8 V		e0				5.31 mm
DS2506S+	Analog Devices	OTP ROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		GULL WING	SERIAL	ASYNCHRONOUS		65536 words	COMMON	5	3/5	1	SMALL OUTLINE	SOP8,.3		Other Memory ICs		1.27 mm	85 Cel		64KX1	64K	-40 Cel	MATTE TIN	DUAL		R-PDSO-G8	1	6 V	2.13 mm			5.285 mm	Not Qualified	65536 bit	2.8 V		e3	30	260		5.31 mm
DS2502S/T&R	Maxim Integrated	OTP ROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS		128 words	COMMON	5	3/5	8	SMALL OUTLINE	SOP8,.25		Other Memory ICs		1.27 mm	85 Cel		128X8	128	-40 Cel	TIN LEAD	DUAL		R-PDSO-G8		6 V	1.75 mm			3.9 mm	Not Qualified	1024 bit	2.8 V	MICROLAN COMPATIBLE	e0				4.9 mm	15000 ns
DS2502S+T&R	Analog Devices	OTP ROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS		128 words	COMMON	5	3/5	8	SMALL OUTLINE	SOP8,.25		Other Memory ICs		1.27 mm	85 Cel		128X8	128	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G8	1	6 V	1.75 mm			3.9 mm	Not Qualified	1024 bit	2.8 V	MICROLAN COMPATIBLE	e3	30	260		4.9 mm	15000 ns
DS2502S-UNW	Maxim Integrated	OTP ROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	COMMON	5	3/5	8	SMALL OUTLINE	SOP8,.25		Other Memory ICs		1.27 mm	85 Cel		128X8	128	-40 Cel	TIN LEAD	DUAL		R-PDSO-G8	1	6 V	1.75 mm			3.9 mm	Not Qualified	1024 bit	2.8 V	MICROLAN COMPATIBLE	e0				4.9 mm
ER5911/P	Microchip Technology	OTP ROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	NMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	12 mA	128 words		5	5	8	IN-LINE	DIP8,.3	16	EEPROMs	10	2.54 mm	70 Cel	3-STATE	128X8	128	0 Cel	TIN LEAD	DUAL	SOFTWARE	R-PDIP-T8		5.5 V	5.08 mm	10000 Write/Erase Cycles		7.62 mm	Not Qualified	1024 bit	4.5 V	AUTOMATIC WRITE	e0			.003 Amp	9.8425 mm
DS2502SY	Analog Devices	OTP ROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS		1024 words				1	SMALL OUTLINE					1.27 mm	85 Cel		1KX1	1K	-40 Cel	TIN LEAD	DUAL		R-PDSO-G8	1	6 V	1.75 mm			3.9 mm	Not Qualified	1024 bit	2.8 V		e0				4.9 mm
DS2506S-UNW	Analog Devices	OTP ROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS		65536 words	COMMON		3/5	1	SMALL OUTLINE	SOP8,.3		Other Memory ICs		1.27 mm	85 Cel		64KX1	64K	-40 Cel	TIN LEAD	DUAL		R-PDSO-G8	1	6 V	1.75 mm			3.9 mm	Not Qualified	65536 bit	2.8 V		e0				4.9 mm
SLE4412M2	Infineon Technologies	OTP ROM	COMMERCIAL	8						MOS					10 mA	256 words	COMMON			1	MICROELECTRONIC ASSEMBLY	MODULE,8LEAD,.46		OTP ROMs			70 Cel		256X1	256	-10 Cel											Not Qualified									500 ns
DS2505S-UNW	Maxim Integrated	OTP ROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS		16384 words				1	SMALL OUTLINE					1.27 mm	85 Cel		16KX1	16K	-40 Cel	TIN LEAD	DUAL		R-PDSO-G8	1	6 V	1.75 mm			3.9 mm	Not Qualified	16384 bit	2.8 V		e0				4.9 mm
DS2506S+T&R	Maxim Integrated	OTP ROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS		65536 words		5		1	SMALL OUTLINE						85 Cel		64KX1	64K	-40 Cel		DUAL		R-PDSO-G8		6 V						65536 bit	2.8 V			NOT SPECIFIED	NOT SPECIFIED
DS2502Y	Maxim Integrated	OTP ROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS		128 words	COMMON	5	3/5	8	SMALL OUTLINE	SOP8,.25		Other Memory ICs		1.27 mm	85 Cel		128X8	128	-40 Cel	TIN LEAD	DUAL		R-PDSO-G8	1	6 V	1.75 mm			3.9 mm	Not Qualified	1024 bit	2.8 V	MICROLAN COMPATIBLE	e0				4.9 mm	15000 ns
XC1764-CD8M	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			10 mA	65536 words	COMMON	5	5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel		DUAL		R-XDIP-T8					2.5 MHz		Not Qualified	65536 bit						.0005 Amp
XC1765L-DD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			5 mA	65536 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel		DUAL		R-XDIP-T8					2.5 MHz		Not Qualified	65536 bit						.0015 Amp
XC17128D-DD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			10 mA	131072 words	COMMON	5	5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel	3-STATE	128KX1	128K	-40 Cel		DUAL		R-XDIP-T8					12.5 MHz		Not Qualified	131072 bit						.00005 Amp
XC17128L-DD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			5 mA	131072 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel	3-STATE	128KX1	128K	-40 Cel		DUAL		R-XDIP-T8					10 MHz		Not Qualified	131072 bit						.00005 Amp
XC1718L-DD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			5 mA	18144 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel	3-STATE	18144X1	18144	-40 Cel		DUAL		R-XDIP-T8					2.5 MHz		Not Qualified							.0015 Amp
XC1718L-DD8M	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			5 mA	18144 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	125 Cel	3-STATE	18144X1	18144	-55 Cel		DUAL		R-XDIP-T8					2.5 MHz		Not Qualified							.0015 Amp
XC17256L-DD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			5 mA	262144 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel		DUAL		R-XDIP-T8					10 MHz		Not Qualified	262144 bit						.00005 Amp
XC17128L-SO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			5 mA	131072 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP8,.25		OTP ROMs		1.27 mm	85 Cel	3-STATE	128KX1	128K	-40 Cel	TIN LEAD	DUAL		R-PDSO-G8	3				10 MHz		Not Qualified	131072 bit			e0	30	225	.00005 Amp
XC17256D-DD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			10 mA	262144 words	COMMON	5	5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel		DUAL		R-XDIP-T8					12 MHz		Not Qualified	262144 bit						.00005 Amp
XC17128L-DD8M	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			5 mA	131072 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	125 Cel	3-STATE	128KX1	128K	-55 Cel		DUAL		R-XDIP-T8					10 MHz		Not Qualified	131072 bit						.00005 Amp
XC17256L-DD8M	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			5 mA	262144 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	125 Cel	3-STATE	256KX1	256K	-55 Cel		DUAL		R-XDIP-T8					10 MHz		Not Qualified	262144 bit						.00005 Amp
XC17128D-DD8R	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			10 mA	131072 words	COMMON	5	5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	125 Cel	3-STATE	128KX1	128K	-55 Cel		DUAL		R-XDIP-T8					12.5 MHz		Not Qualified	131072 bit						.00005 Amp
XC17256L-DD8R	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			5 mA	262144 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	125 Cel	3-STATE	256KX1	256K	-55 Cel		DUAL		R-XDIP-T8					10 MHz		Not Qualified	262144 bit						.00005 Amp
XC17256D-DD8R	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			10 mA	262144 words	COMMON	5	5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	125 Cel	3-STATE	256KX1	256K	-55 Cel		DUAL		R-XDIP-T8					12 MHz		Not Qualified	262144 bit						.00005 Amp
XC17128L-DD8R	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			5 mA	131072 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	125 Cel	3-STATE	128KX1	128K	-55 Cel		DUAL		R-XDIP-T8					10 MHz		Not Qualified	131072 bit						.00005 Amp
XC1765D-DD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			10 mA	65536 words	COMMON	5	5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel		DUAL		R-XDIP-T8					2.5 MHz		Not Qualified	65536 bit						.0015 Amp
XC1736-DD8M	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			10 mA	36288 words	COMMON	5	5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	125 Cel	3-STATE	36288X1	36288	-55 Cel		DUAL		R-XDIP-T8					2.5 MHz		Not Qualified							.0005 Amp			21
XC1736-CD8C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			10 mA	36288 words	COMMON	5	5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel	3-STATE	36288X1	36288	-40 Cel		DUAL		R-XDIP-T8					2.5 MHz		Not Qualified							.0005 Amp			21
XC1718D-DD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			10 mA	18144 words	COMMON	5	5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel	3-STATE	18144X1	18144	-40 Cel		DUAL		R-XDIP-T8					5 MHz		Not Qualified							.0015 Amp
XC1736D-DD8R	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			10 mA	36288 words	COMMON	5	5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	125 Cel	3-STATE	36288X1	36288	-55 Cel		DUAL		R-XDIP-T8					5 MHz		Not Qualified							.0015 Amp
XC17256D-SO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			10 mA	262144 words	COMMON	5	5	1	SMALL OUTLINE	SOP8,.25		OTP ROMs		1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	TIN LEAD	DUAL		R-PDSO-G8	3				12 MHz		Not Qualified	262144 bit			e0	30	225	.00005 Amp
XC1764-CD8C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			10 mA	65536 words	COMMON	5	5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel		DUAL		R-XDIP-T8					2.5 MHz		Not Qualified	65536 bit						.0005 Amp
XC17128D-SO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			10 mA	131072 words	COMMON	5	5	1	SMALL OUTLINE	SOP8,.25		OTP ROMs		1.27 mm	85 Cel	3-STATE	128KX1	128K	-40 Cel	TIN LEAD	DUAL		R-PDSO-G8	3				12.5 MHz		Not Qualified	131072 bit			e0	30	225	.00005 Amp
XC1718D-DD8R	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			10 mA	18144 words	COMMON	5	5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	125 Cel	3-STATE	18144X1	18144	-55 Cel		DUAL		R-XDIP-T8					5 MHz		Not Qualified							.0015 Amp
XC17256L-SO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			5 mA	262144 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP8,.25		OTP ROMs		1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	TIN LEAD	DUAL		R-PDSO-G8	3				10 MHz		Not Qualified	262144 bit			e0	30	225	.00005 Amp
XC1718-PD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE				18144 words	COMMON	5	5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	70 Cel	3-STATE	18144X1	18144	0 Cel	TIN LEAD	DUAL		R-PDIP-T8	1				5 MHz		Not Qualified				e0	30	225				15
XC1764-PD8C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			10 mA	65536 words	COMMON	5	5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	TIN LEAD	DUAL		R-PDIP-T8	1				2.5 MHz		Not Qualified	65536 bit			e0	30	225	.0005 Amp
XC1718D-DD8M	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			10 mA	18144 words	COMMON	5	5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	125 Cel	3-STATE	18144X1	18144	-55 Cel		DUAL		R-XDIP-T8					5 MHz		Not Qualified							.0015 Amp
XC1736D-DD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			10 mA	36288 words	COMMON	5	5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel	3-STATE	36288X1	36288	-40 Cel		DUAL		R-XDIP-T8					5 MHz		Not Qualified							.0015 Amp
XC1718L-DD8R	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			5 mA	18144 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	125 Cel	3-STATE	18144X1	18144	-55 Cel		DUAL		R-XDIP-T8					2.5 MHz		Not Qualified							.0015 Amp
XC1765L-DD8R	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE			5 mA	65536 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel		DUAL		R-XDIP-T8					2.5 MHz		Not Qualified	65536 bit						.0015 Amp
XC1765L-DD8M	Xilinx	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			5 mA	65536 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel		DUAL		R-XDIP-T8					2.5 MHz		Not Qualified	65536 bit						.0015 Amp
XC17128L-SO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			5 mA	131072 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP8,.25		OTP ROMs		1.27 mm	70 Cel	3-STATE	128KX1	128K	0 Cel	TIN LEAD	DUAL		R-PDSO-G8	3				10 MHz		Not Qualified	131072 bit			e0	30	225	.00005 Amp
XC17256L-SO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			5 mA	262144 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP8,.25		OTP ROMs		1.27 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	TIN LEAD	DUAL		R-PDSO-G8	3				10 MHz		Not Qualified	262144 bit			e0	30	225	.00005 Amp

OTP ROM

OTP ROM, or One-Time Programmable Read-Only Memory, is a type of non-volatile computer memory that is programmed once and cannot be reprogrammed. OTP ROM is used to store data that needs to be permanently stored and cannot be changed or updated in the future.

OTP ROM is created using a process similar to that used to manufacture Mask ROM. However, instead of programming the memory during the manufacturing process, OTP ROM is programmed after the manufacturing process, but before it is delivered to the customer. This allows the customer to program the memory with the data that they need to store permanently.

OTP ROM is commonly used in devices such as microcontrollers, smart cards, and other electronic devices that require permanent storage of data. It is ideal for storing critical data, such as system settings, encryption keys, and other sensitive information that needs to be permanently stored and cannot be changed or updated in the future.