SRAM MODULE SRAM 527

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
IDT7MP4045S30M	Renesas Electronics	SRAM MODULE	COMMERCIAL	64	SIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	1200 mA	262144 words	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM64	SRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	4.5 V	0 Cel	TIN LEAD	SINGLE	R-PSMA-N64		16.002 mm			Not Qualified	8388608 bit			e0			.08 Amp		30 ns
IDT7MP6086S25M	Renesas Electronics	SRAM MODULE	COMMERCIAL	72	SIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		NO LEAD	PARALLEL	SYNCHRONOUS	800 mA	32768 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	SRAMs	1.27 mm	70 Cel	3-STATE	32KX36	32K	4.5 V	0 Cel	TIN LEAD	SINGLE	R-PSMA-N72					Not Qualified	1179648 bit			e0			.8 Amp		40 ns
IDT7M4077S30C	Renesas Electronics	SRAM MODULE	COMMERCIAL	64	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1200 mA	262144 words	COMMON	5	5	32	IN-LINE	DIP64,.6	SRAMs	2.54 mm	70 Cel	3-STATE	256KX32	256K	4.5 V	0 Cel	TIN LEAD	DUAL	R-XDIP-T64					Not Qualified	8388608 bit			e0			.08 Amp		30 ns
IDT7MP4045S30Z	Renesas Electronics	SRAM MODULE	COMMERCIAL	64	ZIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1200 mA	262144 words	COMMON	5	5	32	IN-LINE	ZIP64/68,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	4.5 V	0 Cel	TIN LEAD	ZIG-ZAG	R-PZIP-T64		15.24 mm			Not Qualified	8388608 bit			e0			.08 Amp		30 ns
IDT7M4077B20CB	Renesas Electronics	SRAM MODULE	MILITARY	64	DIP	RECTANGULAR	CERAMIC	NO			MIL-STD-883 Class B (Modified)	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1600 mA	262144 words	COMMON	5	5	32	IN-LINE	DIP64,.6	SRAMs	2.54 mm	125 Cel	3-STATE	256KX32	256K		-55 Cel	TIN LEAD	DUAL	R-XDIP-T64					Not Qualified	8388608 bit			e0					20 ns
IDT7M4016S30C	Renesas Electronics	SRAM MODULE	COMMERCIAL	48	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words	COMMON	5	5	16	IN-LINE	DIP48,.9	SRAMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	4.5 V	0 Cel	TIN LEAD	DUAL	R-XDIP-T48					Not Qualified	4194304 bit			e0			.48 Amp		30 ns
IDT7MB4040S45P	Renesas Electronics	SRAM MODULE	COMMERCIAL	44	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1440 mA	262144 words	SEPARATE	5	5	9	IN-LINE	DIP44,.6	SRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	4.5 V	0 Cel	TIN LEAD	DUAL	R-PDIP-T44					Not Qualified	2359296 bit			e0			.27 Amp		45 ns
IDT7M856S85C	Renesas Electronics	SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	380 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	TIN LEAD	DUAL	R-XDIP-T28					Not Qualified	262144 bit			e0			.06 Amp		85 ns
IDT7MP4045S45M	Renesas Electronics	SRAM MODULE	COMMERCIAL	64	SIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	1200 mA	262144 words	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM64	SRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	4.5 V	0 Cel	TIN LEAD	SINGLE	R-PSMA-N64		16.002 mm			Not Qualified	8388608 bit			e0			.08 Amp		45 ns
IDT7M4077S45C	Renesas Electronics	SRAM MODULE	COMMERCIAL	64	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1200 mA	262144 words	COMMON	5	5	32	IN-LINE	DIP64,.6	SRAMs	2.54 mm	70 Cel	3-STATE	256KX32	256K	4.5 V	0 Cel	TIN LEAD	DUAL	R-XDIP-T64					Not Qualified	8388608 bit			e0			.08 Amp		45 ns
IDT7M4077B17C	Renesas Electronics	SRAM MODULE	COMMERCIAL	64	DIP	RECTANGULAR	CERAMIC	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1600 mA	262144 words	COMMON	5	5	32	IN-LINE	DIP64,.6	SRAMs	2.54 mm	70 Cel	3-STATE	256KX32	256K		0 Cel	TIN LEAD	DUAL	R-XDIP-T64					Not Qualified	8388608 bit			e0					17 ns
IDT7MP564L35S	Renesas Electronics	SRAM MODULE	COMMERCIAL	28			PLASTIC/EPOXY	NO		CMOS			PARALLEL	ASYNCHRONOUS	400 mA	16384 words	SEPARATE	5	5	5		SIP28,.1	SRAMs	2.54 mm	70 Cel	3-STATE	16KX5	16K	2 V	0 Cel	TIN LEAD	SINGLE						Not Qualified	81920 bit			e0			.0003 Amp		35 ns
IDT7MP6086S50M	Renesas Electronics	SRAM MODULE	COMMERCIAL	72	SIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		NO LEAD	PARALLEL	SYNCHRONOUS	1150 mA	32768 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	SRAMs	1.27 mm	70 Cel	3-STATE	32KX36	32K	4.5 V	0 Cel	TIN LEAD	SINGLE	R-PSMA-N72					Not Qualified	1179648 bit			e0					19 ns
IDT7MBV4151-100	Renesas Electronics	SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO				NO LEAD	PARALLEL	SYNCHRONOUS	780 mA	262144 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	256KX72	256K	3.14 V	0 Cel	TIN LEAD	DUAL	R-PDMA-N160			100 MHz		Not Qualified	18874368 bit			e0			.1 Amp
IDT7M4077S35C	Renesas Electronics	SRAM MODULE	COMMERCIAL	64	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1200 mA	262144 words	COMMON	5	5	32	IN-LINE	DIP64,.6	SRAMs	2.54 mm	70 Cel	3-STATE	256KX32	256K	4.5 V	0 Cel	TIN LEAD	DUAL	R-XDIP-T64					Not Qualified	8388608 bit			e0			.08 Amp		35 ns
IDT7M856S70C	Renesas Electronics	SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	380 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	TIN LEAD	DUAL	R-XDIP-T28					Not Qualified	262144 bit			e0			.06 Amp		70 ns
IDT7MP564L25S	Renesas Electronics	SRAM MODULE	COMMERCIAL	28			PLASTIC/EPOXY	NO		CMOS			PARALLEL	ASYNCHRONOUS	400 mA	16384 words	SEPARATE	5	5	5		SIP28,.1	SRAMs	2.54 mm	70 Cel	3-STATE	16KX5	16K	2 V	0 Cel	TIN LEAD	SINGLE						Not Qualified	81920 bit			e0			.0003 Amp		25 ns
IDT7MBV4151-66	Renesas Electronics	SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO				NO LEAD	PARALLEL	SYNCHRONOUS	780 mA	262144 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	256KX72	256K	3.14 V	0 Cel	TIN LEAD	DUAL	R-PDMA-N160			66 MHz		Not Qualified	18874368 bit			e0			.1 Amp
IDT7M4077B15CB	Renesas Electronics	SRAM MODULE	MILITARY	64	DIP	RECTANGULAR	CERAMIC	NO			MIL-STD-883 Class B (Modified)	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1600 mA	262144 words	COMMON	5	5	32	IN-LINE	DIP64,.6	SRAMs	2.54 mm	125 Cel	3-STATE	256KX32	256K		-55 Cel	TIN LEAD	DUAL	R-XDIP-T64					Not Qualified	8388608 bit			e0					15 ns
IDT7M4077S25C	Renesas Electronics	SRAM MODULE	COMMERCIAL	64	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1200 mA	262144 words	COMMON	5	5	32	IN-LINE	DIP64,.6	SRAMs	2.54 mm	70 Cel	3-STATE	256KX32	256K	4.5 V	0 Cel	TIN LEAD	DUAL	R-XDIP-T64					Not Qualified	8388608 bit			e0			.08 Amp		25 ns
IDT7MP564L45S	Renesas Electronics	SRAM MODULE	COMMERCIAL	28			PLASTIC/EPOXY	NO		CMOS			PARALLEL	ASYNCHRONOUS	400 mA	16384 words	SEPARATE	5	5	5		SIP28,.1	SRAMs	2.54 mm	70 Cel	3-STATE	16KX5	16K	2 V	0 Cel	TIN LEAD	SINGLE						Not Qualified	81920 bit			e0			.0003 Amp		45 ns
IDT7M4077B17CB	Renesas Electronics	SRAM MODULE	MILITARY	64	DIP	RECTANGULAR	CERAMIC	NO			MIL-STD-883 Class B (Modified)	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1600 mA	262144 words	COMMON	5	5	32	IN-LINE	DIP64,.6	SRAMs	2.54 mm	125 Cel	3-STATE	256KX32	256K		-55 Cel	TIN LEAD	DUAL	R-XDIP-T64					Not Qualified	8388608 bit			e0					17 ns
IDT7M4077B15C	Renesas Electronics	SRAM MODULE	COMMERCIAL	64	DIP	RECTANGULAR	CERAMIC	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1600 mA	262144 words	COMMON	5	5	32	IN-LINE	DIP64,.6	SRAMs	2.54 mm	70 Cel	3-STATE	256KX32	256K		0 Cel	TIN LEAD	DUAL	R-XDIP-T64					Not Qualified	8388608 bit			e0					15 ns
IDT7MP564L20S	Renesas Electronics	SRAM MODULE	COMMERCIAL	28			PLASTIC/EPOXY	NO		CMOS			PARALLEL	ASYNCHRONOUS	400 mA	16384 words	SEPARATE	5	5	5		SIP28,.1	SRAMs	2.54 mm	70 Cel	3-STATE	16KX5	16K	2 V	0 Cel	TIN LEAD	SINGLE						Not Qualified	81920 bit			e0			.0003 Amp		20 ns
IDT7M856S40C	Renesas Electronics	SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	380 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	TIN LEAD	DUAL	R-XDIP-T28					Not Qualified	262144 bit			e0			.06 Amp		40 ns
IDT7MB4009S15P	Renesas Electronics	SRAM MODULE	COMMERCIAL	44	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	COMMON	5	5	16	IN-LINE	DIP44,1.9	SRAMs	2.54 mm	70 Cel	3-STATE	32KX16	32K	4.5 V	0 Cel	TIN LEAD	DUAL	R-PDIP-T44					Not Qualified	524288 bit			e0					15 ns
IDT7M856S50C	Renesas Electronics	SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	380 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	TIN LEAD	DUAL	R-XDIP-T28					Not Qualified	262144 bit			e0			.06 Amp		50 ns
IDT7M4077S55C	Renesas Electronics	SRAM MODULE	COMMERCIAL	64	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1200 mA	262144 words	COMMON	5	5	32	IN-LINE	DIP64,.6	SRAMs	2.54 mm	70 Cel	3-STATE	256KX32	256K	4.5 V	0 Cel	TIN LEAD	DUAL	R-XDIP-T64					Not Qualified	8388608 bit			e0			.08 Amp		55 ns
IDT7MBV4150-66	Renesas Electronics	SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO				NO LEAD	PARALLEL	SYNCHRONOUS	610 mA	131072 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	128KX64	128K	3.14 V	0 Cel	TIN LEAD	DUAL	R-PDMA-N160			66 MHz		Not Qualified	8388608 bit			e0			.06 Amp
IDT7MBV4150-100	Renesas Electronics	SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO				NO LEAD	PARALLEL	SYNCHRONOUS	610 mA	131072 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	128KX64	128K	3.14 V	0 Cel	TIN LEAD	DUAL	R-PDMA-N160			100 MHz		Not Qualified	8388608 bit			e0			.06 Amp
IDT7M856S60C	Renesas Electronics	SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	380 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	TIN LEAD	DUAL	R-XDIP-T28					Not Qualified	262144 bit			e0			.06 Amp		60 ns
KMM965G115P-G7	Samsung	SRAM MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		1048576 words		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		1MX64	1M		0 Cel		DUAL	R-XDMA-N144	3.6 V				Not Qualified	67108864 bit	3 V							5.5 ns
K6R3024V1D-HC10	Samsung	SRAM MODULE	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	150 mA	131072 words	COMMON	3.3	3.3	24	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX24	128K	3 V	0 Cel		BOTTOM	R-PBGA-B119	3.6 V			14 mm	Not Qualified	3145728 bit	3 V			30	240	.015 Amp	22 mm	10 ns
KMM966G115Q-G8	Samsung	SRAM MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		1048576 words		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		1MX64	1M		0 Cel		DUAL	R-XDMA-N144	3.6 V				Not Qualified	67108864 bit	3 V							6 ns
KMM966G225Q-G8	Samsung	SRAM MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		2097152 words		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		2MX64	2M		0 Cel		DUAL	R-XDMA-N144	3.6 V				Not Qualified	134217728 bit	3 V							6 ns
KMM966G225Q-G7	Samsung	SRAM MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		2097152 words		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		2MX64	2M		0 Cel		DUAL	R-XDMA-N144	3.6 V				Not Qualified	134217728 bit	3 V							5.5 ns
K6R3024V1D-HI12	Samsung	SRAM MODULE	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	130 mA	131072 words	COMMON	3.3	3.3	24	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX24	128K	3 V	-40 Cel		BOTTOM	R-PBGA-B119	3.6 V			14 mm	Not Qualified	3145728 bit	3 V			30	240	.015 Amp	22 mm	12 ns
KMM965G225P-G6	Samsung	SRAM MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		2097152 words		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		2MX64	2M		0 Cel		DUAL	R-XDMA-N144	3.6 V				Not Qualified	134217728 bit	3.135 V							5.5 ns
KMM966G225Q-G5	Samsung	SRAM MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		2097152 words		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		2MX64	2M		0 Cel		DUAL	R-XDMA-N144	3.6 V				Not Qualified	134217728 bit	3.135 V							4.5 ns
KMM966G225P-G8	Samsung	SRAM MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		2097152 words		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		2MX64	2M		0 Cel		DUAL	R-XDMA-N144	3.6 V				Not Qualified	134217728 bit	3 V							6 ns
K6R3024V1D-HC12	Samsung	SRAM MODULE	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	130 mA	131072 words	COMMON	3.3	3.3	24	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX24	128K	3 V	0 Cel		BOTTOM	R-PBGA-B119	3.6 V			14 mm	Not Qualified	3145728 bit	3 V			30	240	.015 Amp	22 mm	12 ns
KMM966G225P-G5	Samsung	SRAM MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		2097152 words		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		2MX64	2M		0 Cel		DUAL	R-XDMA-N144	3.6 V				Not Qualified	134217728 bit	3.135 V							4.5 ns
K6R3024V1D-HI090	Samsung	SRAM MODULE	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		131072 words		3.3		24	GRID ARRAY			1.27 mm	85 Cel		128KX24	128K		-40 Cel		BOTTOM	R-PBGA-B119	3.6 V			14 mm	Not Qualified	3145728 bit	3 V						22 mm	9 ns
KMM965G225P-G5	Samsung	SRAM MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		2097152 words		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		2MX64	2M		0 Cel		DUAL	R-XDMA-N144	3.6 V				Not Qualified	134217728 bit	3.135 V							4.5 ns
KMM764V80G-15	Samsung	SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS	360 mA	65536 words	COMMON	3.3	3.3,5	8	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	64KX8	64K	3.14 V	0 Cel		DUAL	R-PDMA-N160	3.6 V	28.702 mm		5.461 mm	Not Qualified	524288 bit	3.13 V	ALSO OPERATES AT 5 V TYP				.01 Amp	110.236 mm	15 ns
KMM965G225Q-G8	Samsung	SRAM MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		2097152 words		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		2MX64	2M		0 Cel		DUAL	R-XDMA-N144	3.6 V				Not Qualified	134217728 bit	3 V							6 ns
K6R3024V1D-HI10	Samsung	SRAM MODULE	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	150 mA	131072 words	COMMON	3.3	3.3	24	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX24	128K	3 V	-40 Cel		BOTTOM	R-PBGA-B119	3.6 V			14 mm	Not Qualified	3145728 bit	3 V			30	240	.015 Amp	22 mm	10 ns
KMM965G225Q-G5	Samsung	SRAM MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		2097152 words		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		2MX64	2M		0 Cel		DUAL	R-XDMA-N144	3.6 V				Not Qualified	134217728 bit	3.135 V							4.5 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.