SRAM MODULE SRAM 527

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
5962-9461110HMA	Defense Logistics Agency	SRAM MODULE	MILITARY		QFP		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		32	FLATPACK				1.27 mm	125 Cel		512KX32	512K		-55 Cel	TIN LEAD	QUAD			5.5 V	5.08 mm		22.352 mm	Qualified	16777216 bit	4.5 V		e0			22.352 mm	17 ns
CYM1641HD-35C	Cypress Semiconductor	SRAM MODULE	COMMERCIAL	48	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1800 mA	1048576 words	COMMON	5	5	4	MICROELECTRONIC ASSEMBLY	DIP48,.9	8	SRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-XDMA-T48	5.5 V				Not Qualified	4194304 bit	4.5 V	CONFIGURABLE AS 256K X 16	e0	NO	.32 Amp		35 ns
CYM1851PZ-20C	Cypress Semiconductor	SRAM MODULE	COMMERCIAL	72	ZIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1200 mA	1048576 words	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	ZIP72/76,.1,.1		SRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	4.5 V	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZMA-T72	5.5 V				Not Qualified	33554432 bit	4.5 V	CONFIGURABLE AS 1M X 32	e0	YES	.08 Amp		20 ns
DS2229	Analog Devices	SRAM MODULE	COMMERCIAL	80	SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	524288 words	COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	SSIM80		SRAMs	1.27 mm	70 Cel	3-STATE	512KX16	512K	2 V	0 Cel	TIN LEAD	SINGLE		R-XSMA-N80	5.5 V	18.7706 mm			Not Qualified	8388608 bit	4.5 V	BATTERY BACKUP OPERATION	e0		.000008 Amp		85 ns
MCM36F9DG10	NXP Semiconductors	SRAM MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	BICMOS		NO LEAD	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	MICROELECTRONIC ASSEMBLY					70 Cel		512KX36	512K		0 Cel		DUAL		R-XDMA-N144	3.6 V				Not Qualified	18874368 bit	3.135 V	FLOW-THROUGH ARCHITECTURE					10 ns
MCM36F8DG10	NXP Semiconductors	SRAM MODULE	COMMERCIAL	144	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	BICMOS		NO LEAD	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	MICROELECTRONIC ASSEMBLY				.8 mm	70 Cel		256KX36	256K		0 Cel		ZIG-ZAG		R-XZMA-N144	3.6 V	25.55 mm		3.8 mm		9437184 bit	3.135 V	WD-MAX				67.6 mm	10 ns
MCM72F10DG8	NXP Semiconductors	SRAM MODULE		168	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO				NO LEAD	PARALLEL	SYNCHRONOUS	3580 mA	1048576 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		SRAMs	1.27 mm		3-STATE	1MX72	1M	3.14 V			DUAL		R-PDMA-N168			100 MHz		Not Qualified	75497472 bit							8 ns
MCM72F10DG9	NXP Semiconductors	SRAM MODULE		168	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO				NO LEAD	PARALLEL	SYNCHRONOUS	3580 mA	1048576 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		SRAMs	1.27 mm		3-STATE	1MX72	1M	3.14 V			DUAL		R-PDMA-N168			90 MHz		Not Qualified	75497472 bit							9 ns
CYM1831LPZ-35C	Infineon Technologies	SRAM MODULE	COMMERCIAL	64	ZIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	720 mA	65536 words	COMMON	5	5	32	IN-LINE	ZIP64/68,.1,.1		SRAMs	1.27 mm	70 Cel	3-STATE	64KX32	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T64					Not Qualified	2097152 bit			e0		.032 Amp		35 ns
CYM1831LPZ-25C	Infineon Technologies	SRAM MODULE	COMMERCIAL	64	ZIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	720 mA	65536 words	COMMON	5	5	32	IN-LINE	ZIP64/68,.1,.1		SRAMs	1.27 mm	70 Cel	3-STATE	64KX32	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T64					Not Qualified	2097152 bit			e0		.032 Amp		25 ns
CY7M194-20DC	Infineon Technologies	SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	325 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP24,.3		SRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24					Not Qualified	262144 bit			e0		.2 Amp		20 ns
CYM1831LPZ-45C	Infineon Technologies	SRAM MODULE	COMMERCIAL	64	ZIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	720 mA	65536 words	COMMON	5	5	32	IN-LINE	ZIP64/68,.1,.1		SRAMs	1.27 mm	70 Cel	3-STATE	64KX32	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T64					Not Qualified	2097152 bit			e0		.032 Amp		45 ns
DS2229-100	Maxim Integrated	SRAM MODULE	COMMERCIAL	80	SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	SSIM80		SRAMs	1.27 mm	70 Cel	3-STATE	512KX16	512K	4.5 V	0 Cel	TIN LEAD	SINGLE		R-XSMA-N80	5.5 V	18.1356 mm			Not Qualified	8388608 bit	4.5 V		e0		.06 Amp		100 ns
DS2229-120	Maxim Integrated	SRAM MODULE	COMMERCIAL	80	SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	SSIM80		SRAMs	1.27 mm	70 Cel	3-STATE	512KX16	512K	4.5 V	0 Cel	TIN LEAD	SINGLE		R-XSMA-N80	5.5 V	18.1356 mm			Not Qualified	8388608 bit	4.5 V		e0		.06 Amp		120 ns
DS2229-85	Maxim Integrated	SRAM MODULE	COMMERCIAL	80	SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	524288 words	COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	SSIM80		SRAMs	1.27 mm	70 Cel	3-STATE	512KX16	512K	2 V	0 Cel	TIN LEAD	SINGLE		R-XSMA-N80	5.5 V	18.7706 mm			Not Qualified	8388608 bit	4.5 V		e0		.000008 Amp		85 ns
7M4077B20CB	Renesas Electronics	SRAM MODULE	MILITARY	64	DIP	RECTANGULAR	CERAMIC	NO			MIL-STD-883 Class B (Modified)	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1600 mA	262144 words	COMMON	5	5	32	IN-LINE	DIP64,.6		SRAMs	2.54 mm	125 Cel	3-STATE	256KX32	256K		-55 Cel	TIN LEAD	DUAL		R-XDIP-T64					Not Qualified	8388608 bit			e0				20 ns
7MP6086S25M	Renesas Electronics	SRAM MODULE	COMMERCIAL	72	SIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		NO LEAD	PARALLEL	SYNCHRONOUS	800 mA	32768 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		SRAMs	1.27 mm	70 Cel	3-STATE	32KX36	32K	4.5 V	0 Cel	TIN LEAD	SINGLE		R-PSMA-N72					Not Qualified	1179648 bit			e0		.8 Amp		40 ns
7M4077S55C	Renesas Electronics	SRAM MODULE	COMMERCIAL	64	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1200 mA	262144 words	COMMON	5	5	32	IN-LINE	DIP64,.6		SRAMs	2.54 mm	70 Cel	3-STATE	256KX32	256K	4.5 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T64					Not Qualified	8388608 bit			e0		.08 Amp		55 ns
8MP824S70S	Renesas Electronics	SRAM MODULE	COMMERCIAL	30			PLASTIC/EPOXY	NO		CMOS			PARALLEL	ASYNCHRONOUS	200 mA	131072 words	COMMON	5	5	8		SIP30,.2		SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	TIN LEAD	SINGLE							Not Qualified	1048576 bit			e0		.06 Amp		70 ns
7MP4045S45M	Renesas Electronics	SRAM MODULE	COMMERCIAL	64	SIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	1200 mA	262144 words	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM64		SRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	4.5 V	0 Cel	TIN LEAD	SINGLE		R-PSMA-N64		16.002 mm			Not Qualified	8388608 bit			e0		.08 Amp		45 ns
IDT8MP824S60S	Renesas Electronics	SRAM MODULE	COMMERCIAL	30			PLASTIC/EPOXY	NO		CMOS			PARALLEL	ASYNCHRONOUS	200 mA	131072 words	COMMON	5	5	8		SIP30,.2		SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	TIN LEAD	SINGLE							Not Qualified	1048576 bit			e0		.06 Amp		60 ns
8M656S85C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	360 mA	16384 words	COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	16KX16	16K	4.5 V	0 Cel	TIN LEAD	DUAL		R-CDMA-T40	5.5 V				Not Qualified	262144 bit	4.5 V		e0		.06 Amp		85 ns
IDT8M628S40C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	320 mA	8192 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	8KX16	8K	4.5 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T40					Not Qualified	131072 bit			e0		.03 Amp		40 ns
8M656S70C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	360 mA	16384 words	COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	16KX16	16K	4.5 V	0 Cel	TIN LEAD	DUAL		R-CDMA-T40	5.5 V				Not Qualified	262144 bit	4.5 V		e0		.06 Amp		70 ns
7M4077B17C	Renesas Electronics	SRAM MODULE	COMMERCIAL	64	DIP	RECTANGULAR	CERAMIC	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1600 mA	262144 words	COMMON	5	5	32	IN-LINE	DIP64,.6		SRAMs	2.54 mm	70 Cel	3-STATE	256KX32	256K		0 Cel	TIN LEAD	DUAL		R-XDIP-T64					Not Qualified	8388608 bit			e0				17 ns
IDT8M628S85C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	320 mA	8192 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	8KX16	8K	4.5 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T40					Not Qualified	131072 bit			e0		.03 Amp		85 ns
7M856S85C	Renesas Electronics	SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	380 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	TIN LEAD	DUAL		R-CDIP-T28	5.5 V				Not Qualified	262144 bit	4.5 V		e0		.06 Amp		85 ns
7M856S60C	Renesas Electronics	SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	380 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	TIN LEAD	DUAL		R-CDIP-T28	5.5 V				Not Qualified	262144 bit	4.5 V		e0		.06 Amp		60 ns
8M628S70C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	320 mA	8192 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	8KX16	8K	4.5 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T40					Not Qualified	131072 bit			e0		.03 Amp		70 ns
IDT8M656S70C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	360 mA	16384 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	16KX16	16K	4.5 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T40					Not Qualified	262144 bit			e0		.06 Amp		70 ns
HM66205LM-10	Renesas Electronics	SRAM MODULE	COMMERCIAL	32		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	MICROELECTRONIC ASSEMBLY					70 Cel		512KX8	512K		0 Cel		DUAL		R-XDMA-T32	5.5 V				Not Qualified	4194304 bit	4.5 V						100 ns
IDT8MP824S70S	Renesas Electronics	SRAM MODULE	COMMERCIAL	30			PLASTIC/EPOXY	NO		CMOS			PARALLEL	ASYNCHRONOUS	200 mA	131072 words	COMMON	5	5	8		SIP30,.2		SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	TIN LEAD	SINGLE							Not Qualified	1048576 bit			e0		.06 Amp		70 ns
HM5-8808S-9+	Renesas Electronics	SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28						65536 bit			e0		.000125 Amp		100 ns
7M4077S25C	Renesas Electronics	SRAM MODULE	COMMERCIAL	64	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1200 mA	262144 words	COMMON	5	5	32	IN-LINE	DIP64,.6		SRAMs	2.54 mm	70 Cel	3-STATE	256KX32	256K	4.5 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T64					Not Qualified	8388608 bit			e0		.08 Amp		25 ns
7MP4045S30M	Renesas Electronics	SRAM MODULE	COMMERCIAL	64	SIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	1200 mA	262144 words	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM64		SRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	4.5 V	0 Cel	TIN LEAD	SINGLE		R-PSMA-N64		16.002 mm			Not Qualified	8388608 bit			e0		.08 Amp		30 ns
7M4077B20C	Renesas Electronics	SRAM MODULE	COMMERCIAL	64	DIP	RECTANGULAR	CERAMIC	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1600 mA	262144 words	COMMON	5	5	32	IN-LINE	DIP64,.6		SRAMs	2.54 mm	70 Cel	3-STATE	256KX32	256K		0 Cel	TIN LEAD	DUAL		R-XDIP-T64					Not Qualified	8388608 bit			e0				20 ns
8M656S40C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	360 mA	16384 words	COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	16KX16	16K	4.5 V	0 Cel	TIN LEAD	DUAL		R-CDMA-T40	5.5 V				Not Qualified	262144 bit	4.5 V		e0		.06 Amp		40 ns
7MBV4151-66	Renesas Electronics	SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO				NO LEAD	PARALLEL	SYNCHRONOUS	780 mA	262144 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160		SRAMs	1.27 mm	70 Cel	3-STATE	256KX72	256K	3.14 V	0 Cel	TIN LEAD	DUAL		R-PDMA-N160			66 MHz		Not Qualified	18874368 bit			e0		.1 Amp
7M856S70C	Renesas Electronics	SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	380 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	TIN LEAD	DUAL		R-CDIP-T28	5.5 V				Not Qualified	262144 bit	4.5 V		e0		.06 Amp		70 ns
HM66205LM-85	Renesas Electronics	SRAM MODULE	COMMERCIAL	32		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	MICROELECTRONIC ASSEMBLY					70 Cel		512KX8	512K		0 Cel		DUAL		R-XDMA-T32	5.5 V				Not Qualified	4194304 bit	4.5 V						85 ns
7M4077S35C	Renesas Electronics	SRAM MODULE	COMMERCIAL	64	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1200 mA	262144 words	COMMON	5	5	32	IN-LINE	DIP64,.6		SRAMs	2.54 mm	70 Cel	3-STATE	256KX32	256K	4.5 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T64					Not Qualified	8388608 bit			e0		.08 Amp		35 ns
IDT8M656S85C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	360 mA	16384 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	16KX16	16K	4.5 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T40					Not Qualified	262144 bit			e0		.06 Amp		85 ns
HM5-8808-9+	Renesas Electronics	SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	98 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28						65536 bit			e0		.0004 Amp		150 ns
7M4077B17CB	Renesas Electronics	SRAM MODULE	MILITARY	64	DIP	RECTANGULAR	CERAMIC	NO			MIL-STD-883 Class B (Modified)	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1600 mA	262144 words	COMMON	5	5	32	IN-LINE	DIP64,.6		SRAMs	2.54 mm	125 Cel	3-STATE	256KX32	256K		-55 Cel	TIN LEAD	DUAL		R-XDIP-T64					Not Qualified	8388608 bit			e0				17 ns
HB66A2568A-35	Renesas Electronics	SRAM MODULE	COMMERCIAL	60		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		8	MICROELECTRONIC ASSEMBLY				2.54 mm	70 Cel		256KX8	256K		0 Cel		ZIG-ZAG		R-XZMA-T60	5.5 V	13.34 mm			Not Qualified	2097152 bit	4.5 V					87.63 mm	35 ns
7M4077B15C	Renesas Electronics	SRAM MODULE	COMMERCIAL	64	DIP	RECTANGULAR	CERAMIC	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1600 mA	262144 words	COMMON	5	5	32	IN-LINE	DIP64,.6		SRAMs	2.54 mm	70 Cel	3-STATE	256KX32	256K		0 Cel	TIN LEAD	DUAL		R-XDIP-T64					Not Qualified	8388608 bit			e0				15 ns
8M856L55C	Renesas Electronics	SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	TIN LEAD	DUAL		R-XDIP-T28					Not Qualified	262144 bit			e0				55 ns
IDT8M656S50C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	330 mA	16384 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	16KX16	16K	4.5 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T40					Not Qualified	262144 bit			e0		.06 Amp		50 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.