SRAM MODULE SRAM 527

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
KMM966G225Q-G6	Samsung	SRAM MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		2097152 words		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		2MX64	2M		0 Cel		DUAL		R-XDMA-N144	3.6 V			Not Qualified	134217728 bit	3.135 V								5.5 ns
K6R3024V1D-HI120	Samsung	SRAM MODULE	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		3.3		24	GRID ARRAY				1.27 mm	85 Cel		128KX24	128K		-40 Cel		BOTTOM		R-PBGA-B119	3.6 V		14 mm	Not Qualified	3145728 bit	3 V							22 mm	12 ns
KMM965G115P-G8	Samsung	SRAM MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		1048576 words		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		1MX64	1M		0 Cel		DUAL		R-XDMA-N144	3.6 V			Not Qualified	67108864 bit	3 V								6 ns
KMM966G225P-G6	Samsung	SRAM MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		2097152 words		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		2MX64	2M		0 Cel		DUAL		R-XDMA-N144	3.6 V			Not Qualified	134217728 bit	3.135 V								5.5 ns
KMM966G115P-G5	Samsung	SRAM MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		1048576 words		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		1MX64	1M		0 Cel		DUAL		R-XDMA-N144	3.6 V			Not Qualified	67108864 bit	3.135 V								4.5 ns
KMM965G225Q-G7	Samsung	SRAM MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		2097152 words		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		2MX64	2M		0 Cel		DUAL		R-XDMA-N144	3.6 V			Not Qualified	134217728 bit	3 V								5.5 ns
KMM966G225P-G7	Samsung	SRAM MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		2097152 words		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		2MX64	2M		0 Cel		DUAL		R-XDMA-N144	3.6 V			Not Qualified	134217728 bit	3 V								5.5 ns
K6R3024V1D-HI100	Samsung	SRAM MODULE	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		3.3		24	GRID ARRAY				1.27 mm	85 Cel		128KX24	128K		-40 Cel		BOTTOM		R-PBGA-B119	3.6 V		14 mm	Not Qualified	3145728 bit	3 V							22 mm	10 ns
KMM965G115P-G5	Samsung	SRAM MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		1048576 words		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		1MX64	1M		0 Cel		DUAL		R-XDMA-N144	3.6 V			Not Qualified	67108864 bit	3.135 V								4.5 ns
K6R3024V1D-HC09	Samsung	SRAM MODULE	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	170 mA	131072 words	COMMON	3.3	3.3	24	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	128KX24	128K	3.14 V	0 Cel		BOTTOM		R-PBGA-B119	3.6 V		14 mm	Not Qualified	3145728 bit	3 V			30	240		.015 Amp	22 mm	9 ns
KMM965G225P-G8	Samsung	SRAM MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		2097152 words		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		2MX64	2M		0 Cel		DUAL		R-XDMA-N144	3.6 V			Not Qualified	134217728 bit	3 V								6 ns
K6R3024V1D-HC120	Samsung	SRAM MODULE	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		3.3		24	GRID ARRAY				1.27 mm	70 Cel		128KX24	128K		0 Cel		BOTTOM		R-PBGA-B119	3.6 V		14 mm	Not Qualified	3145728 bit	3 V							22 mm	12 ns
KMM965G115P-G6	Samsung	SRAM MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		1048576 words		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		1MX64	1M		0 Cel		DUAL		R-XDMA-N144	3.6 V			Not Qualified	67108864 bit	3.135 V								5.5 ns
KMM966G115Q-G7	Samsung	SRAM MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		1048576 words		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		1MX64	1M		0 Cel		DUAL		R-XDMA-N144	3.6 V			Not Qualified	67108864 bit	3 V								5.5 ns
K6R3024V1D-HC100	Samsung	SRAM MODULE	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		3.3		24	GRID ARRAY				1.27 mm	70 Cel		128KX24	128K		0 Cel		BOTTOM		R-PBGA-B119	3.6 V		14 mm	Not Qualified	3145728 bit	3 V							22 mm	10 ns
K6R3024V1D-HI09	Samsung	SRAM MODULE	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	170 mA	131072 words	COMMON	3.3	3.3	24	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	128KX24	128K	3.14 V	-40 Cel		BOTTOM		R-PBGA-B119	3.6 V		14 mm	Not Qualified	3145728 bit	3 V			30	240		.015 Amp	22 mm	9 ns
KMM965G225Q-G6	Samsung	SRAM MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		2097152 words		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		2MX64	2M		0 Cel		DUAL		R-XDMA-N144	3.6 V			Not Qualified	134217728 bit	3.135 V								5.5 ns
K6R3024V1D-HC090	Samsung	SRAM MODULE	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		3.3		24	GRID ARRAY				1.27 mm	70 Cel		128KX24	128K		0 Cel		BOTTOM		R-PBGA-B119	3.6 V		14 mm	Not Qualified	3145728 bit	3 V							22 mm	9 ns
KMM965G225P-G7	Samsung	SRAM MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		2097152 words		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		2MX64	2M		0 Cel		DUAL		R-XDMA-N144	3.6 V			Not Qualified	134217728 bit	3 V								5.5 ns
MT4S12832Z-20	Micron Technology	SRAM MODULE	COMMERCIAL	64	ZIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	620 mA	131072 words	COMMON	5	5	32	IN-LINE	ZIP64/68,.1,.1		SRAMs	1.27 mm	70 Cel	3-STATE	128KX32	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T64		13.843 mm		Not Qualified	4194304 bit			e0				.02 Amp		20 ns
MT8LS25632RM25	Micron Technology	SRAM MODULE	COMMERCIAL	64	SIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	1280 mA	262144 words	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM64		SRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	3 V	0 Cel		SINGLE		R-PSMA-N64		15.113 mm		Not Qualified	8388608 bit							.04 Amp		25 ns
MT8LS25632RM25L	Micron Technology	SRAM MODULE	COMMERCIAL	64	SIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	1280 mA	262144 words	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM64		SRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	2 V	0 Cel		SINGLE		R-PSMA-N64		15.113 mm		Not Qualified	8388608 bit							.0024 Amp		25 ns
MT8S6432Z-15	Micron Technology	SRAM MODULE	COMMERCIAL	64	ZIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1360 mA	65536 words	COMMON	5	5	32	IN-LINE	ZIP64/68,.1,.1		SRAMs	1.27 mm	70 Cel	3-STATE	64KX32	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T64		12.954 mm		Not Qualified	2097152 bit			e0				.04 Amp		15 ns
MT8S25632M-35L	Micron Technology	SRAM MODULE	COMMERCIAL	64	SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	1000 mA	262144 words	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM64		SRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	2 V	0 Cel		SINGLE	1	R-XSMA-N64	5.5 V	15.113 mm		Not Qualified	8388608 bit	4.5 V	CONFIGURABLE AS 256K X 32				YES	.0012 Amp		35 ns
MT2LSYT3264C4G-8L	Micron Technology	SRAM MODULE	COMMERCIAL	160		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		32768 words		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	32KX64	32K	2 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V			Not Qualified	2097152 bit	3.135 V	OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE				YES			8 ns
MT8S25632M-15	Micron Technology	SRAM MODULE	COMMERCIAL	64	SIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	1520 mA	262144 words	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM64		SRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	4.5 V	0 Cel		SINGLE		R-PSMA-N64		15.113 mm		Not Qualified	8388608 bit							.04 Amp		15 ns
MT4LSYT6472B2G-11P	Micron Technology	SRAM MODULE	COMMERCIAL	160		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		65536 words		3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	64KX72	64K		0 Cel		DUAL	1	R-XDMA-N160	3.465 V			Not Qualified	4718592 bit	3.135 V	OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE				YES			11 ns
MT8LS6432Z-15	Micron Technology	SRAM MODULE	COMMERCIAL	64	ZIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1000 mA	65536 words	COMMON	3.3	3.3	32	IN-LINE	ZIP64/68,.1,.1		SRAMs	1.27 mm	70 Cel	3-STATE	64KX32	64K	3 V	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T64		12.954 mm		Not Qualified	2097152 bit			e0				.024 Amp		15 ns
MT2LSYT3272B2G-10L	Micron Technology	SRAM MODULE	COMMERCIAL	160		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		32768 words		3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	32KX72	32K	2 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V			Not Qualified	2359296 bit	3.135 V	OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE				YES			10 ns
MT4LS12832RM20	Micron Technology	SRAM MODULE	COMMERCIAL	64	SIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	720 mA	131072 words	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM64		SRAMs	1.27 mm	70 Cel	3-STATE	128KX32	128K	3 V	0 Cel		SINGLE		R-PSMA-N64		15.113 mm		Not Qualified	4194304 bit							.02 Amp		20 ns
MT4LS12832M-17	Micron Technology	SRAM MODULE	COMMERCIAL	64	SIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	340 mA	131072 words	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM64		SRAMs	1.27 mm	70 Cel	3-STATE	128KX32	128K	2 V	0 Cel		SINGLE		R-PSMA-N64		15.113 mm		Not Qualified	4194304 bit							.0002 Amp		17 ns
MT8S6432Z-20	Micron Technology	SRAM MODULE	COMMERCIAL	64	ZIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1200 mA	65536 words	COMMON	5	5	32	IN-LINE	ZIP64/68,.1,.1		SRAMs	1.27 mm	70 Cel	3-STATE	64KX32	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T64		12.954 mm		Not Qualified	2097152 bit			e0				.04 Amp		20 ns
MT8LS25632RZ20L	Micron Technology	SRAM MODULE	COMMERCIAL	64	SIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	1440 mA	262144 words	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM64		SRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	2 V	0 Cel		SINGLE		R-PSMA-N64		15.494 mm		Not Qualified	8388608 bit							.0024 Amp		20 ns
MT4S6416D-25	Micron Technology	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	290 mA	65536 words	COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-XDMA-T40	5.5 V			Not Qualified	1048576 bit	4.5 V		e0			YES	.04 Amp		25 ns
MT4LS12832M-25L	Micron Technology	SRAM MODULE	COMMERCIAL	64	SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	260 mA	131072 words	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM64		SRAMs	1.27 mm	70 Cel	3-STATE	128KX32	128K	2 V	0 Cel		SINGLE	1	R-XSMA-N64	3.6 V	15.113 mm		Not Qualified	4194304 bit	3 V					YES	.0002 Amp		25 ns
MT8S6432M-25LP	Micron Technology	SRAM MODULE	COMMERCIAL	64	SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	1040 mA	65536 words	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM64		SRAMs	1.27 mm	70 Cel	3-STATE	64KX32	64K	2 V	0 Cel		SINGLE	1	R-XSMA-N64	5.5 V	15.113 mm		Not Qualified	2097152 bit	4.5 V					YES	.0024 Amp		25 ns
MT8S6432M-15	Micron Technology	SRAM MODULE	COMMERCIAL	64	SIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	1360 mA	65536 words	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM64		SRAMs	1.27 mm	70 Cel	3-STATE	64KX32	64K	4.5 V	0 Cel		SINGLE		R-PSMA-N64		15.113 mm		Not Qualified	2097152 bit							.04 Amp		15 ns
MT2LSYT3264C4G-7L	Micron Technology	SRAM MODULE	COMMERCIAL	160		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		32768 words		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	32KX64	32K	2 V	0 Cel		DUAL	1	R-XDMA-N160	3.465 V			Not Qualified	2097152 bit	3.135 V	OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE				YES			7 ns
MT4S6416D-45	Micron Technology	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	250 mA	131072 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	DIP40,.6	16	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-XDMA-T40	5.5 V			Not Qualified	1048576 bit	4.5 V		e0			YES	.02 Amp		45 ns
MT4LSYT6472T4G6L	Micron Technology	SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	1200 mA	65536 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160		SRAMs	1.27 mm	70 Cel	3-STATE	64KX72	64K	2 V	0 Cel		DUAL		R-PDMA-N160				Not Qualified	4718592 bit									6 ns
MT8S1632M-45L	Micron Technology	SRAM MODULE	COMMERCIAL	64	SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	720 mA	65536 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SSIM64,.2	16	SRAMs	1.27 mm	70 Cel	3-STATE	64KX8	64K	2 V	0 Cel		SINGLE	1	R-XSMA-N64	5.5 V			Not Qualified	524288 bit	4.5 V	CONFIGURABLE AS 16K X 32				YES	.002 Amp		45 ns
MT8S25632Z-15L	Micron Technology	SRAM MODULE	COMMERCIAL	64	ZIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1520 mA	262144 words	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	ZIP64/68,.1,.1		SRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	2 V	0 Cel	TIN LEAD	ZIG-ZAG	1	R-XZMA-T64	5.5 V	15.494 mm		Not Qualified	8388608 bit	4.5 V		e0			YES	.0012 Amp		15 ns
MT2LSYT3264C4G-5P	Micron Technology	SRAM MODULE	COMMERCIAL	160		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		32768 words		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	32KX64	32K		0 Cel		DUAL	1	R-XDMA-N160	3.465 V			Not Qualified	2097152 bit	3.135 V	OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE				YES			5 ns
MT4LS12832M-17L	Micron Technology	SRAM MODULE	COMMERCIAL	64	SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	340 mA	131072 words	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM64		SRAMs	1.27 mm	70 Cel	3-STATE	128KX32	128K	2 V	0 Cel		SINGLE	1	R-XSMA-N64	3.6 V	15.113 mm		Not Qualified	4194304 bit	3 V					YES	.0002 Amp		17 ns
MT4S12832Z-45L	Micron Technology	SRAM MODULE	COMMERCIAL	64	ZIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	480 mA	524288 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	ZIP64/68,.1,.1	16	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG	1	R-XZMA-T64	5.5 V	15.367 mm		Not Qualified	4194304 bit	4.5 V	CONFIGURABLE AS 128K X 32	e0			YES	.002 Amp		45 ns
MT4LSYT6472C4G-8P	Micron Technology	SRAM MODULE	COMMERCIAL	160		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		65536 words		3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	64KX72	64K		0 Cel		DUAL	1	R-XDMA-N160	3.465 V			Not Qualified	4718592 bit	3.135 V	OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE				YES			8 ns
MT8S25632Z-20LP	Micron Technology	SRAM MODULE	COMMERCIAL	64	ZIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1240 mA	262144 words	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	ZIP64/68,.1,.1		SRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	2 V	0 Cel	TIN LEAD	ZIG-ZAG	1	R-XZMA-T64	5.5 V	15.494 mm		Not Qualified	8388608 bit	4.5 V		e0			YES	.0012 Amp		20 ns
MT8LS25632M-25LP	Micron Technology	SRAM MODULE	COMMERCIAL	64	SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	520 mA	262144 words	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM64		SRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	2 V	0 Cel		SINGLE	1	R-XSMA-N64	3.6 V	15.113 mm		Not Qualified	8388608 bit	3 V					YES	.0004 Amp		25 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.