SRAM MODULE SRAM 527

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
8MP824S60S	Renesas Electronics	SRAM MODULE	COMMERCIAL	30				PLASTIC/EPOXY	NO		CMOS			PARALLEL	ASYNCHRONOUS	200 mA	131072 words	COMMON	5	5	8		SIP30,.2	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	TIN LEAD	SINGLE					Not Qualified	1048576 bit		e0	.06 Amp		60 ns
IDT8M628S60C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	320 mA	8192 words	COMMON	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX16	8K	4.5 V	0 Cel	TIN LEAD	DUAL	R-XDIP-T40				Not Qualified	131072 bit		e0	.03 Amp		60 ns
HM5-92570-5	Renesas Electronics	SRAM MODULE	COMMERCIAL	48	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	16 words	COMMON	5	5	16	IN-LINE	DIP48,1.3	SRAMs	2.54 mm	70 Cel	3-STATE	16X16	16	2 V	0 Cel		DUAL	R-XDIP-T48				Not Qualified	262144 bit			.0025 Amp		320 ns
7MBV4150-100	Renesas Electronics	SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR		PLASTIC/EPOXY	NO				NO LEAD	PARALLEL	SYNCHRONOUS	610 mA	131072 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	128KX64	128K	3.14 V	0 Cel	TIN LEAD	DUAL	R-PDMA-N160			100 MHz	Not Qualified	8388608 bit		e0	.06 Amp
7MP4045S30Z	Renesas Electronics	SRAM MODULE	COMMERCIAL	64	ZIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1200 mA	262144 words	COMMON	5	5	32	IN-LINE	ZIP64/68,.1,.1	SRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K	4.5 V	0 Cel	TIN LEAD	ZIG-ZAG	R-PZIP-T64		15.24 mm		Not Qualified	8388608 bit		e0	.08 Amp		30 ns
7MP564L35S	Renesas Electronics	SRAM MODULE	COMMERCIAL	28		RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	400 mA	16384 words	SEPARATE	5	5	5	MICROELECTRONIC ASSEMBLY	SIP28,.1	SRAMs	2.54 mm	70 Cel	3-STATE	16KX5	16K	2 V	0 Cel	TIN LEAD	SINGLE	R-PSMA-T28	5.5 V			Not Qualified	81920 bit	4.5 V	e0	.0003 Amp		35 ns
8M628S40C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	320 mA	8192 words	COMMON	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX16	8K	4.5 V	0 Cel	TIN LEAD	DUAL	R-XDIP-T40				Not Qualified	131072 bit		e0	.03 Amp		40 ns
8M628S85CB	Renesas Electronics	SRAM MODULE	MILITARY	40	DIP	RECTANGULAR		CERAMIC	NO		CMOS	MIL-STD-883 Class B (Modified)	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	320 mA	8192 words	COMMON	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	125 Cel	3-STATE	8KX16	8K	4.5 V	-55 Cel	TIN LEAD	DUAL	R-XDIP-T40				Not Qualified	131072 bit		e0	.04 Amp		85 ns
7MP564L45S	Renesas Electronics	SRAM MODULE	COMMERCIAL	28		RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	400 mA	16384 words	SEPARATE	5	5	5	MICROELECTRONIC ASSEMBLY	SIP28,.1	SRAMs	2.54 mm	70 Cel	3-STATE	16KX5	16K	2 V	0 Cel	TIN LEAD	SINGLE	R-PSMA-T28	5.5 V			Not Qualified	81920 bit	4.5 V	e0	.0003 Amp		45 ns
7M4077S30C	Renesas Electronics	SRAM MODULE	COMMERCIAL	64	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1200 mA	262144 words	COMMON	5	5	32	IN-LINE	DIP64,.6	SRAMs	2.54 mm	70 Cel	3-STATE	256KX32	256K	4.5 V	0 Cel	TIN LEAD	DUAL	R-XDIP-T64				Not Qualified	8388608 bit		e0	.08 Amp		30 ns
HM5-8808B-9+	Renesas Electronics	SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	107 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	2 V	-40 Cel		DUAL	R-XDIP-T28					65536 bit			.000125 Amp		120 ns
MC-434000-85	Renesas Electronics	SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	89 mA	524288 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32				Not Qualified	4194304 bit		e0	.0004 Amp		85 ns
7MP4008S40S	Renesas Electronics	SRAM MODULE	COMMERCIAL	36				PLASTIC/EPOXY	NO		CMOS			PARALLEL	ASYNCHRONOUS		524288 words	COMMON	5	5	8		SIP36	SRAMs		70 Cel	3-STATE	512KX8	512K	4.5 V	0 Cel	TIN LEAD	SINGLE					Not Qualified	4194304 bit		e0			40 ns
7MB4040S45P	Renesas Electronics	SRAM MODULE	COMMERCIAL	44	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1440 mA	262144 words	SEPARATE	5	5	9	IN-LINE	DIP44,.6	SRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	4.5 V	0 Cel	TIN LEAD	DUAL	R-PDIP-T44				Not Qualified	2359296 bit		e0	.27 Amp		45 ns
HM66205LM-12	Renesas Electronics	SRAM MODULE	COMMERCIAL	32		RECTANGULAR		UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		512KX8	512K		0 Cel		DUAL	R-XDMA-T32	5.5 V			Not Qualified	4194304 bit	4.5 V				120 ns
7M856S40C	Renesas Electronics	SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	380 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	TIN LEAD	DUAL	R-CDIP-T28	5.5 V			Not Qualified	262144 bit	4.5 V	e0	.06 Amp		40 ns
HM5-92560-5	Renesas Electronics	SRAM MODULE	COMMERCIAL	48	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	44 mA	16384 words	COMMON	5	5	16	IN-LINE	DIP48,1.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX16	16K	2 V	0 Cel		DUAL	R-XDIP-T48				Not Qualified	262144 bit			.0000035 Amp		270 ns
MC-434000-10	Renesas Electronics	SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	89 mA	524288 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32				Not Qualified	4194304 bit		e0	.0004 Amp		100 ns
7MP564L25S	Renesas Electronics	SRAM MODULE	COMMERCIAL	28		RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	400 mA	16384 words	SEPARATE	5	5	5	MICROELECTRONIC ASSEMBLY	SIP28,.1	SRAMs	2.54 mm	70 Cel	3-STATE	16KX5	16K	2 V	0 Cel	TIN LEAD	SINGLE	R-PSMA-T28	5.5 V			Not Qualified	81920 bit	4.5 V	e0	.0003 Amp		25 ns
7MP6086S50M	Renesas Electronics	SRAM MODULE	COMMERCIAL	72	SIMM	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		NO LEAD	PARALLEL	SYNCHRONOUS	1150 mA	32768 words	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	SRAMs	1.27 mm	70 Cel	3-STATE	32KX36	32K	4.5 V	0 Cel	TIN LEAD	SINGLE	R-PSMA-N72				Not Qualified	1179648 bit		e0			19 ns
7MP564L20S	Renesas Electronics	SRAM MODULE	COMMERCIAL	28		RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	400 mA	16384 words	SEPARATE	5	5	5	MICROELECTRONIC ASSEMBLY	SIP28,.1	SRAMs	2.54 mm	70 Cel	3-STATE	16KX5	16K	2 V	0 Cel	TIN LEAD	SINGLE	R-PSMA-T28	5.5 V			Not Qualified	81920 bit	4.5 V	e0	.0003 Amp		20 ns
HB66A2568A-25	Renesas Electronics	SRAM MODULE	COMMERCIAL	60		RECTANGULAR		UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		8	MICROELECTRONIC ASSEMBLY			2.54 mm	70 Cel		256KX8	256K		0 Cel		ZIG-ZAG	R-XZMA-T60	5.5 V	13.34 mm		Not Qualified	2097152 bit	4.5 V			87.63 mm	25 ns
MC-434000C-10	Renesas Electronics	SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	89 mA	524288 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T32				Not Qualified	4194304 bit		e0	.0004 Amp		100 ns
HM66205L-85	Renesas Electronics	SRAM MODULE	COMMERCIAL	32		RECTANGULAR		UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		512KX8	512K		0 Cel		DUAL	R-XDMA-T32	5.5 V			Not Qualified	4194304 bit	4.5 V				85 ns
IDT8M856L55C	Renesas Electronics	SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	TIN LEAD	DUAL	R-XDIP-T28				Not Qualified	262144 bit		e0			55 ns
IDT8M656S40C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	360 mA	16384 words	COMMON	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel	3-STATE	16KX16	16K	4.5 V	0 Cel	TIN LEAD	DUAL	R-XDIP-T40				Not Qualified	262144 bit		e0	.06 Amp		40 ns
MC-434000C-85	Renesas Electronics	SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	89 mA	524288 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T32				Not Qualified	4194304 bit		e0	.0004 Amp		85 ns
7MB4009S15P	Renesas Electronics	SRAM MODULE	COMMERCIAL	44	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words	COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	DIP44,1.9	SRAMs	2.54 mm	70 Cel	3-STATE	16KX16	16K	4.5 V	0 Cel	TIN LEAD	DUAL	R-PDMA-T44	5.5 V			Not Qualified	262144 bit	4.5 V	e0			15 ns
8M656S50C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	330 mA	16384 words	COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	DIP40,.6	SRAMs	2.54 mm	70 Cel	3-STATE	16KX16	16K	4.5 V	0 Cel	TIN LEAD	DUAL	R-CDMA-T40	5.5 V			Not Qualified	262144 bit	4.5 V	e0	.06 Amp		50 ns
HM5-91M2-9	Renesas Electronics	SRAM MODULE	INDUSTRIAL	48	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP48,1.3	SRAMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel		DUAL	R-XDIP-T48				Not Qualified	1048576 bit			.001 Amp		200 ns
7M856S50C	Renesas Electronics	SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	380 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	TIN LEAD	DUAL	R-CDIP-T28	5.5 V			Not Qualified	262144 bit	4.5 V	e0	.06 Amp		50 ns
IDT8M628S50C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	320 mA	8192 words	COMMON	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX16	8K	4.5 V	0 Cel	TIN LEAD	DUAL	R-XDIP-T40				Not Qualified	131072 bit		e0	.03 Amp		50 ns
HS0-6564RH-6	Renesas Electronics	SRAM MODULE	COMMERCIAL				100k Rad(Si)				CMOS			PARALLEL	SYNCHRONOUS		8192 words	SEPARATE	5	5	8		DIE OR CHIP	SRAMs		70 Cel	3-STATE	8KX8	8K	1.8 V	0 Cel							Not Qualified	65536 bit			.000064 Amp		240 ns
HM5-92560-9	Renesas Electronics	SRAM MODULE	INDUSTRIAL	48	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	SYNCHRONOUS	47 mA	16384 words	COMMON	5	5	16	IN-LINE	DIP48,1.3	SRAMs	2.54 mm	85 Cel	3-STATE	16KX16	16K	2 V	-40 Cel		DUAL	R-XDIP-T48	5.5 V			Not Qualified	262144 bit	4.5 V		.00035 Amp		170 ns
7MBV4150-66	Renesas Electronics	SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR		PLASTIC/EPOXY	NO				NO LEAD	PARALLEL	SYNCHRONOUS	610 mA	131072 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	128KX64	128K	3.14 V	0 Cel	TIN LEAD	DUAL	R-PDMA-N160			66 MHz	Not Qualified	8388608 bit		e0	.06 Amp
8M628S50C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	320 mA	8192 words	COMMON	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX16	8K	4.5 V	0 Cel	TIN LEAD	DUAL	R-XDIP-T40				Not Qualified	131072 bit		e0	.03 Amp		50 ns
7M4077S45C	Renesas Electronics	SRAM MODULE	COMMERCIAL	64	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1200 mA	262144 words	COMMON	5	5	32	IN-LINE	DIP64,.6	SRAMs	2.54 mm	70 Cel	3-STATE	256KX32	256K	4.5 V	0 Cel	TIN LEAD	DUAL	R-XDIP-T64				Not Qualified	8388608 bit		e0	.08 Amp		45 ns
HS1-6564RH-8	Renesas Electronics	SRAM MODULE	MILITARY	40	DIP	RECTANGULAR	100k Rad(Si)	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	SYNCHRONOUS	56 mA	8192 words	SEPARATE	5	5	8	IN-LINE	DIP40,.9	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	3 V	-55 Cel		DUAL	R-XDIP-T40				Not Qualified	65536 bit			.0012 Amp		400 ns
7MBV4151-100	Renesas Electronics	SRAM MODULE	COMMERCIAL	160	DIMM	RECTANGULAR		PLASTIC/EPOXY	NO				NO LEAD	PARALLEL	SYNCHRONOUS	780 mA	262144 words	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM160	SRAMs	1.27 mm	70 Cel	3-STATE	256KX72	256K	3.14 V	0 Cel	TIN LEAD	DUAL	R-PDMA-N160			100 MHz	Not Qualified	18874368 bit		e0	.1 Amp
IDT8M628S70C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	320 mA	8192 words	COMMON	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX16	8K	4.5 V	0 Cel	TIN LEAD	DUAL	R-XDIP-T40				Not Qualified	131072 bit		e0	.03 Amp		70 ns
8M628S85C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	320 mA	8192 words	COMMON	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX16	8K	4.5 V	0 Cel	TIN LEAD	DUAL	R-XDIP-T40				Not Qualified	131072 bit		e0	.03 Amp		85 ns
7M4077B15CB	Renesas Electronics	SRAM MODULE	MILITARY	64	DIP	RECTANGULAR		CERAMIC	NO			MIL-STD-883 Class B (Modified)	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1600 mA	262144 words	COMMON	5	5	32	IN-LINE	DIP64,.6	SRAMs	2.54 mm	125 Cel	3-STATE	256KX32	256K		-55 Cel	TIN LEAD	DUAL	R-XDIP-T64				Not Qualified	8388608 bit		e0			15 ns
IDT8M628S85CB	Renesas Electronics	SRAM MODULE	MILITARY	40	DIP	RECTANGULAR		CERAMIC	NO		CMOS	MIL-STD-883 Class B (Modified)	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	320 mA	8192 words	COMMON	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	125 Cel	3-STATE	8KX16	8K	4.5 V	-55 Cel	TIN LEAD	DUAL	R-XDIP-T40				Not Qualified	131072 bit		e0	.04 Amp		85 ns
HM5-8808AB-9+	Renesas Electronics	SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	107 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	2 V	-40 Cel		DUAL	R-XDIP-T28					65536 bit			.000125 Amp		120 ns
8M628S60C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	320 mA	8192 words	COMMON	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX16	8K	4.5 V	0 Cel	TIN LEAD	DUAL	R-XDIP-T40				Not Qualified	131072 bit		e0	.03 Amp		60 ns
HM66205L-12	Renesas Electronics	SRAM MODULE	COMMERCIAL	32		RECTANGULAR		UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		512KX8	512K		0 Cel		DUAL	R-XDMA-T32	5.5 V			Not Qualified	4194304 bit	4.5 V				120 ns
IDT7M4077B20C	Renesas Electronics	SRAM MODULE	COMMERCIAL	64	DIP	RECTANGULAR		CERAMIC	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	1600 mA	262144 words	COMMON	5	5	32	IN-LINE	DIP64,.6	SRAMs	2.54 mm	70 Cel	3-STATE	256KX32	256K		0 Cel	TIN LEAD	DUAL	R-XDIP-T64				Not Qualified	8388608 bit		e0			20 ns
IDT7MP4008S40S	Renesas Electronics	SRAM MODULE	COMMERCIAL	36				PLASTIC/EPOXY	NO		CMOS			PARALLEL	ASYNCHRONOUS		524288 words	COMMON	5	5	8		SIP36	SRAMs		70 Cel	3-STATE	512KX8	512K	4.5 V	0 Cel	TIN LEAD	SINGLE					Not Qualified	4194304 bit		e0			40 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.