100 SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

7027S25PFGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

5

16

FLATPACK

85 Cel

32KX16

32K

-40 Cel

QUAD

S-PQFP-G100

5.5 V

524288 bit

4.5 V

25 ns

7143LA35PFGB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

MIL-PRF-38535

GULL WING

PARALLEL

ASYNCHRONOUS

295 mA

2048 words

5

16

FLATPACK

.5 mm

125 Cel

2KX16

2K

-55 Cel

QUAD

S-PQFP-G100

5.5 V

14 mm

32768 bit

4.5 V

14 mm

35 ns

7143SA55PFGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

315 mA

2048 words

5

16

FLATPACK

.5 mm

85 Cel

2KX16

2K

-40 Cel

QUAD

S-PQFP-G100

5.5 V

14 mm

32768 bit

4.5 V

14 mm

55 ns

7024L70PFGB8

Renesas Electronics

MULTI-PORT SRAM

MILITARY

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

MIL-PRF-38535

GULL WING

PARALLEL

ASYNCHRONOUS

4096 words

5

16

FLATPACK

125 Cel

4KX16

4K

-55 Cel

QUAD

S-PQFP-G100

5.5 V

65536 bit

4.5 V

70 ns

7025L55PFGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

5

16

FLATPACK

85 Cel

8KX16

8K

-40 Cel

QUAD

S-PQFP-G100

5.5 V

131072 bit

4.5 V

55 ns

70V08L25PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

65536 words

3.3

8

FLATPACK

70 Cel

64KX8

64K

0 Cel

QUAD

S-PQFP-G100

3.6 V

524288 bit

3 V

25 ns

7019L20PFGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

5

9

FLATPACK

85 Cel

128KX9

128K

-40 Cel

QUAD

S-PQFP-G100

5.5 V

1179648 bit

4.5 V

20 ns

7143SA25PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

265 mA

2048 words

5

16

FLATPACK

.5 mm

70 Cel

2KX16

2K

0 Cel

QUAD

S-PQFP-G100

5.5 V

14 mm

32768 bit

4.5 V

14 mm

25 ns

70V9089L12PFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

205 mA

65536 words

COMMON

3.3

3.3

8

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

70 Cel

3-STATE

64KX8

64K

3 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G100

3

3.6 V

1.4 mm

50 MHz

14 mm

Not Qualified

524288 bit

3 V

FLOW-THROUGH OR PIPELINED ARCHITECTURE

e3

30

260

.003 Amp

14 mm

12 ns

70261S55PFGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16384 words

5

16

FLATPACK, LOW PROFILE, FINE PITCH

.5 mm

85 Cel

16KX16

16K

-40 Cel

MATTE TIN

QUAD

S-PQFP-G100

3

5.5 V

1.6 mm

14 mm

Not Qualified

262144 bit

4.5 V

e3

14 mm

55 ns

70V08L20PFGI8

Renesas Electronics

DUAL-PORT SRAM

INDUSTRIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

280 mA

65536 words

COMMON

3.3

3.3

8

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

85 Cel

3-STATE

64KX8

64K

3 V

-40 Cel

MATTE TIN

QUAD

2

S-PQFP-G100

3

3.6 V

1.6 mm

14 mm

Not Qualified

524288 bit

3 V

e3

30

260

.006 Amp

14 mm

20 ns

7024S70PFGB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

MIL-PRF-38535

GULL WING

PARALLEL

ASYNCHRONOUS

300 mA

4096 words

COMMON

5

5

16

FLATPACK

QFP100,.63SQ,20

SRAMs

.5 mm

125 Cel

3-STATE

4KX16

4K

4.5 V

-55 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G100

3

5.5 V

Not Qualified

65536 bit

4.5 V

e3

30

260

.00003 Amp

70 ns

7024L20PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4096 words

5

16

FLATPACK, LOW PROFILE, FINE PITCH

.5 mm

70 Cel

4KX16

4K

0 Cel

MATTE TIN

QUAD

S-PQFP-G100

5.5 V

1.6 mm

14 mm

65536 bit

4.5 V

e3

14 mm

20 ns

7143SA25PFGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

330 mA

2048 words

5

16

FLATPACK

.5 mm

85 Cel

2KX16

2K

-40 Cel

QUAD

S-PQFP-G100

5.5 V

14 mm

32768 bit

4.5 V

14 mm

25 ns

70261S25PFGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16384 words

5

16

FLATPACK

85 Cel

16KX16

16K

-40 Cel

QUAD

S-PQFP-G100

5.5 V

262144 bit

4.5 V

25 ns

709379L7PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

32768 words

5

18

FLATPACK

70 Cel

32KX18

32K

0 Cel

QUAD

S-PQFP-G100

5.5 V

589824 bit

4.5 V

7.5 ns

709099L9PFGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

131072 words

5

8

FLATPACK, LOW PROFILE, FINE PITCH

.5 mm

85 Cel

128KX8

128K

-40 Cel

Matte Tin (Sn)

QUAD

S-PQFP-G100

3

5.5 V

1.6 mm

14 mm

Not Qualified

1048576 bit

4.5 V

FLOW-THROUGH OR PIPELINED ARCHITECTURE

e3

NOT SPECIFIED

260

14 mm

20 ns

7143LA35PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

210 mA

2048 words

5

16

FLATPACK

.5 mm

70 Cel

2KX16

2K

0 Cel

QUAD

S-PQFP-G100

5.5 V

14 mm

32768 bit

4.5 V

14 mm

35 ns

7028L20PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

65536 words

5

16

FLATPACK

70 Cel

64KX16

64K

0 Cel

QUAD

S-PQFP-G100

5.5 V

1048576 bit

4.5 V

20 ns

7027L20PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

5

16

FLATPACK

70 Cel

32KX16

32K

0 Cel

QUAD

S-PQFP-G100

5.5 V

524288 bit

4.5 V

20 ns

HM67B3632-10

Renesas Electronics

CACHE SRAM

COMMERCIAL

100

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

32768 words

3.3

36

FLATPACK

.65 mm

70 Cel

32KX36

32K

0 Cel

QUAD

R-PQFP-G100

3.6 V

3.05 mm

14 mm

Not Qualified

1179648 bit

3 V

BURST COUNTER; SELF TIMED WRITE CYCLE; ADDRESS/DATA REGISTER

20 mm

10 ns

HM67B3632FP1-10

Renesas Electronics

CACHE SRAM

COMMERCIAL

100

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

GULL WING

PARALLEL

SYNCHRONOUS

32768 words

3.3

36

FLATPACK

.65 mm

70 Cel

32KX36

32K

0 Cel

QUAD

R-PQFP-G100

3.465 V

3.05 mm

14 mm

Not Qualified

1179648 bit

3.135 V

BURST COUNTER; SELF TIMED WRITE CYCLE

20 mm

10 ns

7025L55PFGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

5

16

FLATPACK

85 Cel

8KX16

8K

-40 Cel

QUAD

S-PQFP-G100

5.5 V

131072 bit

4.5 V

55 ns

70V09L15PFGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

COMMON

3.3

3.3

8

FLATPACK

QFP100,.63SQ,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX8

128K

3 V

-40 Cel

QUAD

2

S-PQFP-G100

Not Qualified

1048576 bit

15 ns

7027S55PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

5

16

FLATPACK

70 Cel

32KX16

32K

0 Cel

QUAD

S-PQFP-G100

5.5 V

524288 bit

4.5 V

55 ns

70P247L55BYI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

BGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

25 mA

4096 words

COMMON

1.8

1.8

16

GRID ARRAY

BGA100,10X10,20

SRAMs

.5 mm

85 Cel

3-STATE

4KX16

4K

1.7 V

-40 Cel

TIN LEAD

BOTTOM

2

S-PBGA-B100

3

1.9 V

Not Qualified

65536 bit

1.7 V

e0

30

225

.000008 Amp

55 ns

7027S15PFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

5

16

FLATPACK

70 Cel

32KX16

32K

0 Cel

QUAD

S-PQFP-G100

5.5 V

524288 bit

4.5 V

15 ns

70V34L15PFG

Renesas Electronics

DUAL-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

185 mA

4096 words

COMMON

3.3

3.3

18

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

70 Cel

3-STATE

4KX18

4K

3 V

0 Cel

MATTE TIN

QUAD

2

S-PQFP-G100

3

3.6 V

1.6 mm

14 mm

Not Qualified

73728 bit

3 V

e3

30

260

.0025 Amp

14 mm

15 ns

70261S15PFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16384 words

5

16

FLATPACK

70 Cel

16KX16

16K

0 Cel

QUAD

S-PQFP-G100

5.5 V

262144 bit

4.5 V

15 ns

7143SA35PFGB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

MIL-PRF-38535

GULL WING

PARALLEL

ASYNCHRONOUS

325 mA

2048 words

5

16

FLATPACK

.5 mm

125 Cel

2KX16

2K

-55 Cel

QUAD

S-PQFP-G100

5.5 V

14 mm

32768 bit

4.5 V

14 mm

35 ns

709159L7PFI

Renesas Electronics

MULTI-PORT SRAM

100

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

440 mA

8192 words

COMMON

5

9

85 Cel

3-STATE

8KX9

8K

4.5 V

-40 Cel

QUAD

2

S-PQFP-G100

5.5 V

73728 bit

4.5 V

FLOW-THROUGH OR PIPELINED ARCHITECTURE

YES

.003 Amp

7.5 ns

7019L15PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

5

9

FLATPACK

70 Cel

128KX9

128K

0 Cel

QUAD

S-PQFP-G100

5.5 V

1179648 bit

4.5 V

15 ns

7024L20PFGI

Renesas Electronics

DUAL-PORT SRAM

INDUSTRIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

320 mA

4096 words

COMMON

5

5

16

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

85 Cel

3-STATE

4KX16

4K

2 V

-40 Cel

Matte Tin (Sn)

QUAD

2

S-PQFP-G100

3

5.5 V

1.6 mm

14 mm

Not Qualified

65536 bit

4.5 V

e3

NOT SPECIFIED

260

.004 Amp

14 mm

20 ns

70V9079S9PFI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

260 mA

32768 words

COMMON

3.3

3.3

8

FLATPACK

QFP100,.63SQ,20

SRAMs

.5 mm

85 Cel

3-STATE

32KX8

32K

3 V

-40 Cel

TIN LEAD

QUAD

2

S-PQFP-G100

3

66.7 MHz

Not Qualified

262144 bit

e0

20

240

.005 Amp

20 ns

70P255L65BYGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

BGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

70 mA

8192 words

COMMON

1.8

1.8/3

16

GRID ARRAY

BGA100,10X10,20

SRAMs

.5 mm

85 Cel

3-STATE

8KX16

8K

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

2

S-PBGA-B100

3

1.9 V

Not Qualified

131072 bit

1.7 V

IT CAN OPERATE ALSO 2.5 TO 3 VOLT

e1

30

260

.000008 Amp

65 ns

70V9359L7BFGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

LFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

330 mA

8192 words

COMMON

3.3

3.3

18

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA100,10X10,32

SRAMs

.5 mm

85 Cel

3-STATE

8KX18

8K

3 V

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

2

S-PBGA-B100

3

3.6 V

1.4 mm

10 mm

Not Qualified

147456 bit

3 V

FLOW-THROUGH OR PIPELINED ARCHITECTURE

e1

30

260

.003 Amp

10 mm

7.5 ns

70261S20PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16384 words

5

16

FLATPACK

70 Cel

16KX16

16K

0 Cel

QUAD

S-PQFP-G100

5.5 V

262144 bit

4.5 V

20 ns

HM67B3632-12

Renesas Electronics

CACHE SRAM

COMMERCIAL

100

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

32768 words

3.3

36

FLATPACK

.65 mm

70 Cel

32KX36

32K

0 Cel

QUAD

R-PQFP-G100

3.6 V

3.05 mm

14 mm

Not Qualified

1179648 bit

3 V

BURST COUNTER; SELF TIMED WRITE CYCLE; ADDRESS/DATA REGISTER

20 mm

12 ns

709099L12PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

131072 words

5

8

FLATPACK, LOW PROFILE, FINE PITCH

.5 mm

70 Cel

128KX8

128K

0 Cel

QUAD

S-PQFP-G100

5.5 V

1.6 mm

14 mm

1048576 bit

4.5 V

FLOW-THROUGH OR PIPELINED ARCHITECTURE

14 mm

25 ns

70V9179L7PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

32768 words

3.3

9

FLATPACK, LOW PROFILE, FINE PITCH

.5 mm

70 Cel

32KX9

32K

0 Cel

MATTE TIN

QUAD

S-PQFP-G100

3.6 V

1.6 mm

14 mm

294912 bit

3 V

FLOW THROUGH OR PIPELINED ARCHITECTURE

e3

14 mm

18 ns

709389L12PF

Renesas Electronics

MULTI-PORT SRAM

100

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

355 mA

65536 words

COMMON

5

18

70 Cel

3-STATE

64KX18

64K

4.5 V

0 Cel

QUAD

2

S-PQFP-G100

5.5 V

1179648 bit

4.5 V

FLOW-THROUGH OR PIPELINED ARCHITECTURE

YES

.003 Amp

12 ns

70V35L25PFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

165 mA

8192 words

COMMON

3.3

3.3

18

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

70 Cel

3-STATE

8KX18

8K

3 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G100

3

3.6 V

1.6 mm

14 mm

Not Qualified

147456 bit

3 V

e3

30

260

.0025 Amp

14 mm

25 ns

70V9179L7PFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

310 mA

32768 words

COMMON

3.3

3.3

9

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

70 Cel

3-STATE

32KX9

32K

3 V

0 Cel

MATTE TIN

QUAD

2

S-PQFP-G100

3

3.6 V

1.6 mm

83 MHz

14 mm

Not Qualified

294912 bit

3 V

FLOW THROUGH OR PIPELINED ARCHITECTURE

e3

30

260

.003 Amp

14 mm

18 ns

70V9079S9PFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

260 mA

32768 words

COMMON

3.3

3.3

8

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

70 Cel

3-STATE

32KX8

32K

3 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G100

3

3.6 V

1.4 mm

66.7 MHz

14 mm

Not Qualified

262144 bit

3 V

FLOW-THROUGH OR PIPELINED ARCHITECTURE

e3

30

260

.005 Amp

14 mm

9 ns

7143SA45PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

290 mA

2048 words

5

16

FLATPACK

.5 mm

70 Cel

2KX16

2K

0 Cel

QUAD

S-PQFP-G100

5.5 V

14 mm

32768 bit

4.5 V

14 mm

45 ns

70V9169L7BFGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

LFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

330 mA

16384 words

COMMON

3.3

9

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA100,10X10,32

.8 mm

85 Cel

3-STATE

16KX9

16K

3 V

-40 Cel

BOTTOM

2

S-PBGA-B100

3.6 V

1.5 mm

10 mm

147456 bit

3 V

PIPELINED OR FLOW THROUGH ARCHITECTURE

YES

.003 Amp

10 mm

7.5 ns

70V9349L9BFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

LFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

230 mA

4096 words

COMMON

3.3

3.3

18

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA100,10X10,32

SRAMs

.5 mm

70 Cel

3-STATE

4KX18

4K

3 V

0 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

2

S-PBGA-B100

3

3.6 V

1.4 mm

10 mm

Not Qualified

73728 bit

3 V

FLOW-THROUGH OR PIPELINED ARCHITECTURE

e1

30

260

.003 Amp

10 mm

9 ns

70261S25PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16384 words

5

16

FLATPACK

70 Cel

16KX16

16K

0 Cel

QUAD

S-PQFP-G100

5.5 V

262144 bit

4.5 V

25 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.