Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
DUAL-PORT SRAM |
INDUSTRIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
240 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
3 V |
-40 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
66 MHz |
Not Qualified |
1048576 bit |
3 V |
e3 |
30 |
260 |
.002 Amp |
9 ns |
|||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
265 mA |
8192 words |
5 |
16 |
FLATPACK |
.5 mm |
70 Cel |
8KX16 |
8K |
0 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
14 mm |
131072 bit |
4.5 V |
14 mm |
25 ns |
|||||||||||||||||||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
250 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
3 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
83 MHz |
14 mm |
Not Qualified |
1048576 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.002 Amp |
14 mm |
18 ns |
|||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
280 mA |
4096 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
4KX18 |
4K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.4 mm |
14 mm |
Not Qualified |
73728 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.003 Amp |
14 mm |
7.5 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
355 mA |
32768 words |
COMMON |
5 |
5 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
32KX18 |
32K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
50 MHz |
14 mm |
Not Qualified |
589824 bit |
4.5 V |
e3 |
30 |
260 |
.003 Amp |
14 mm |
12 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
18 |
FLATPACK |
70 Cel |
8KX18 |
8K |
0 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
147456 bit |
4.5 V |
20 ns |
|||||||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
265 mA |
2048 words |
5 |
16 |
FLATPACK |
.5 mm |
70 Cel |
2KX16 |
2K |
0 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
14 mm |
32768 bit |
4.5 V |
14 mm |
25 ns |
|||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
250 mA |
4096 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
4KX16 |
4K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
30 |
260 |
.000015 Amp |
14 mm |
35 ns |
|||||||||||
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
MOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
32768 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
32KX36 |
32K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.465 V |
1.6 mm |
14 mm |
Not Qualified |
1179648 bit |
3.135 V |
SELF-TIMED WRITE; BURST COUNTER |
20 mm |
12 ns |
|||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
32768 words |
3.3 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
70 Cel |
32KX8 |
32K |
0 Cel |
MATTE TIN |
QUAD |
S-PQFP-G100 |
3.6 V |
1.4 mm |
14 mm |
262144 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
14 mm |
12 ns |
||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
340 mA |
131072 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
30 |
260 |
.003 Amp |
14 mm |
15 ns |
|||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
70 Cel |
4KX16 |
4K |
0 Cel |
MATTE TIN |
QUAD |
S-PQFP-G100 |
5.5 V |
1.6 mm |
14 mm |
65536 bit |
4.5 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN |
e3 |
14 mm |
55 ns |
||||||||||||||||||||||||
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
INDUSTRIAL |
100 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
70 mA |
4096 words |
COMMON |
1.8 |
1.8/3 |
16 |
GRID ARRAY |
BGA100,10X10,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
4KX16 |
4K |
-40 Cel |
TIN LEAD |
BOTTOM |
2 |
S-PBGA-B100 |
1.9 V |
Not Qualified |
65536 bit |
1.7 V |
IT ALSO OPERATES AT SUPPLY VOLTAGE 2.5 V AND 3 V NOMINAL |
e0 |
.000006 Amp |
65 ns |
||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
100 |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
440 mA |
16384 words |
COMMON |
5 |
9 |
85 Cel |
3-STATE |
16KX9 |
16K |
4.5 V |
-40 Cel |
QUAD |
2 |
S-PQFP-G100 |
5.5 V |
147456 bit |
4.5 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
YES |
.003 Amp |
7.5 ns |
||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
220 mA |
8192 words |
5 |
16 |
FLATPACK |
.5 mm |
70 Cel |
8KX16 |
8K |
0 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
14 mm |
131072 bit |
4.5 V |
14 mm |
25 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
250 mA |
2048 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
2KX16 |
2K |
2 V |
0 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
e0 |
20 |
240 |
.0015 Amp |
14 mm |
90 ns |
||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
300 mA |
131072 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
30 |
260 |
.003 Amp |
14 mm |
20 ns |
|||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 Class Q |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
295 mA |
8192 words |
5 |
16 |
FLATPACK |
.5 mm |
125 Cel |
8KX16 |
8K |
-55 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
14 mm |
131072 bit |
4.5 V |
14 mm |
55 ns |
||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
65536 words |
3.3 |
8 |
FLATPACK |
70 Cel |
64KX8 |
64K |
0 Cel |
QUAD |
S-PQFP-G100 |
3.6 V |
524288 bit |
3 V |
15 ns |
|||||||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
210 mA |
4096 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
4KX16 |
4K |
2 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
4.5 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN |
e3 |
30 |
260 |
YES |
.0015 Amp |
14 mm |
55 ns |
|||||||||
Renesas Electronics |
MULTI-PORT SRAM |
100 |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
400 mA |
16384 words |
COMMON |
5 |
9 |
70 Cel |
3-STATE |
16KX9 |
16K |
4.5 V |
0 Cel |
BOTTOM |
2 |
S-PBGA-B100 |
5.5 V |
147456 bit |
4.5 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
YES |
.003 Amp |
7.5 ns |
||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
8192 words |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
85 Cel |
8KX18 |
8K |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
147456 bit |
3 V |
e0 |
14 mm |
25 ns |
|||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
285 mA |
2048 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
125 Cel |
3-STATE |
2KX16 |
2K |
2 V |
-55 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
e0 |
20 |
240 |
.004 Amp |
14 mm |
55 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
205 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
3 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
1048576 bit |
3 V |
e3 |
.003 Amp |
14 mm |
20 ns |
|||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
195 mA |
4096 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
4KX18 |
4K |
3 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
73728 bit |
3 V |
e3 |
30 |
260 |
.005 Amp |
14 mm |
20 ns |
|||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
280 mA |
16384 words |
COMMON |
3.3 |
9 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
.5 mm |
70 Cel |
3-STATE |
16KX9 |
16K |
3 V |
0 Cel |
QUAD |
2 |
S-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
147456 bit |
3 V |
PIPELINED OR FLOW THROUGH ARCHITECTURE |
YES |
.003 Amp |
14 mm |
7.5 ns |
||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
205 mA |
32768 words |
COMMON |
3.3 |
3.3 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.4 mm |
50 MHz |
14 mm |
Not Qualified |
262144 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.003 Amp |
14 mm |
12 ns |
|||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
16 |
FLATPACK |
70 Cel |
16KX16 |
16K |
0 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
262144 bit |
4.5 V |
55 ns |
|||||||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
190 mA |
8192 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
8KX18 |
8K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
147456 bit |
3 V |
e3 |
30 |
260 |
.005 Amp |
14 mm |
25 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
200 mA |
4096 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
4KX18 |
4K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
73728 bit |
3 V |
e3 |
30 |
260 |
.005 Amp |
14 mm |
20 ns |
|||||||||||
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
INDUSTRIAL |
100 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
70 mA |
8192 words |
COMMON |
1.8 |
1.8/3 |
16 |
GRID ARRAY |
BGA100,10X10,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
8KX16 |
8K |
-40 Cel |
TIN LEAD |
BOTTOM |
2 |
S-PBGA-B100 |
1.9 V |
Not Qualified |
131072 bit |
1.7 V |
IT CAN ALSO OPERATE AT 2.5 TO 3 VOLT NOMINAL SUPPLY |
e0 |
.000008 Amp |
65 ns |
||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
16 |
FLATPACK |
70 Cel |
32KX16 |
32K |
0 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
524288 bit |
4.5 V |
35 ns |
|||||||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
16 |
FLATPACK |
85 Cel |
4KX16 |
4K |
-40 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
65536 bit |
4.5 V |
55 ns |
|||||||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
200 mA |
131072 words |
COMMON |
3.3 |
3.3 |
9 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
128KX9 |
128K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
50 MHz |
14 mm |
Not Qualified |
1179648 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.002 Amp |
14 mm |
12 ns |
|||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
BGA |
UNSPECIFIED |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
25 mA |
16384 words |
COMMON |
1.8 |
1.8 |
16 |
GRID ARRAY |
BGA100,10X10,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
16KX16 |
16K |
1.7 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
2 |
X-PBGA-B100 |
3 |
1.9 V |
50 MHz |
Not Qualified |
262144 bit |
1.7 V |
FLOW-THROUGH |
e1 |
30 |
260 |
.000008 Amp |
10 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
330 mA |
16384 words |
COMMON |
3.3 |
9 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA100,10X10,32 |
.8 mm |
70 Cel |
3-STATE |
16KX9 |
16K |
3 V |
0 Cel |
BOTTOM |
2 |
S-PBGA-B100 |
3.6 V |
1.5 mm |
10 mm |
147456 bit |
3 V |
PIPELINED OR FLOW THROUGH ARCHITECTURE |
YES |
.003 Amp |
10 mm |
6.5 ns |
||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
250 mA |
4096 words |
COMMON |
5 |
5 |
16 |
FLATPACK |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
125 Cel |
3-STATE |
4KX16 |
4K |
2 V |
-55 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
e3 |
30 |
260 |
.004 Amp |
70 ns |
|||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
230 mA |
16384 words |
COMMON |
3.3 |
9 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
.5 mm |
70 Cel |
3-STATE |
16KX9 |
16K |
3 V |
0 Cel |
QUAD |
2 |
S-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
147456 bit |
3 V |
PIPELINED OR FLOW THROUGH ARCHITECTURE |
YES |
.003 Amp |
14 mm |
9 ns |
||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
265 mA |
4096 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
4KX16 |
4K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
30 |
260 |
.000015 Amp |
14 mm |
25 ns |
|||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
240 mA |
8192 words |
COMMON |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
.5 mm |
85 Cel |
3-STATE |
8KX16 |
8K |
-40 Cel |
MATTE TIN |
QUAD |
2 |
S-XQFP-G100 |
3 |
5.5 V |
1.4 mm |
14 mm |
Not Qualified |
131072 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP |
e3 |
30 |
260 |
YES |
.004 Amp |
14 mm |
20 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
16 |
FLATPACK |
70 Cel |
32KX16 |
32K |
0 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
524288 bit |
4.5 V |
35 ns |
|||||||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
32768 words |
5 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
70 Cel |
32KX18 |
32K |
0 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
1.6 mm |
14 mm |
589824 bit |
4.5 V |
14 mm |
9 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
280 mA |
16384 words |
COMMON |
3.3 |
9 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
.5 mm |
70 Cel |
3-STATE |
16KX9 |
16K |
3 V |
0 Cel |
QUAD |
2 |
S-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
147456 bit |
3 V |
PIPELINED OR FLOW THROUGH ARCHITECTURE |
YES |
.003 Amp |
14 mm |
7.5 ns |
||||||||||||||||||
Renesas Electronics |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
524288 words |
2.5 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
512KX36 |
512K |
0 Cel |
QUAD |
R-PQFP-G100 |
2.625 V |
1.6 mm |
14 mm |
Not Qualified |
18874368 bit |
2.375 V |
FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY |
20 mm |
7.5 ns |
|||||||||||||||||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
320 mA |
4096 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
4KX16 |
4K |
2 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
30 |
260 |
.004 Amp |
14 mm |
20 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
260 mA |
65536 words |
COMMON |
3.3 |
3.3 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.4 mm |
66.7 MHz |
14 mm |
Not Qualified |
524288 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.005 Amp |
14 mm |
9 ns |
|||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
16 |
FLATPACK |
125 Cel |
4KX16 |
4K |
-55 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
65536 bit |
4.5 V |
70 ns |
||||||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
355 mA |
16384 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
16KX16 |
16K |
4.5 V |
-40 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
4.5 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE |
e0 |
20 |
240 |
.03 Amp |
14 mm |
20 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.