100 SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

7025S55PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

285 mA

8192 words

5

16

FLATPACK

.5 mm

70 Cel

8KX16

8K

0 Cel

QUAD

S-PQFP-G100

5.5 V

14 mm

131072 bit

4.5 V

14 mm

55 ns

7035S20PFGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

5

18

FLATPACK

85 Cel

8KX18

8K

-40 Cel

QUAD

S-PQFP-G100

5.5 V

147456 bit

4.5 V

20 ns

70V9199L9PFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

230 mA

131072 words

COMMON

3.3

3.3

9

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

70 Cel

3-STATE

128KX9

128K

3 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G100

3

3.6 V

1.6 mm

66 MHz

14 mm

Not Qualified

1179648 bit

3 V

FLOW-THROUGH OR PIPELINED ARCHITECTURE

e3

30

260

.002 Amp

14 mm

9 ns

70V9169L7BFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

LFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

280 mA

16384 words

COMMON

3.3

9

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA100,10X10,32

.8 mm

70 Cel

3-STATE

16KX9

16K

3 V

0 Cel

BOTTOM

2

S-PBGA-B100

3.6 V

1.5 mm

10 mm

147456 bit

3 V

PIPELINED OR FLOW THROUGH ARCHITECTURE

YES

.003 Amp

10 mm

7.5 ns

70P246L55BYGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

BGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

4096 words

1.8

16

GRID ARRAY

85 Cel

4KX16

4K

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

S-PBGA-B100

3

1.9 V

Not Qualified

65536 bit

1.7 V

e1

30

260

55 ns

70V09L15PFG

Renesas Electronics

DUAL-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

235 mA

131072 words

COMMON

3.3

3.3

8

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

70 Cel

3-STATE

128KX8

128K

3 V

0 Cel

MATTE TIN

QUAD

2

S-PQFP-G100

3

3.6 V

1.6 mm

14 mm

Not Qualified

1048576 bit

3 V

e3

260

.003 Amp

14 mm

15 ns

70V37L20PFG8

Renesas Electronics

APPLICATION SPECIFIC SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

205 mA

32768 words

COMMON

3.3

3.3

18

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

70 Cel

3-STATE

32KX18

32K

3 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G100

3

3.6 V

1.6 mm

14 mm

Not Qualified

589824 bit

3 V

INTERRUPT FLAG

e3

30

260

.003 Amp

14 mm

20 ns

7024L55PFGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4096 words

5

16

FLATPACK

85 Cel

4KX16

4K

-40 Cel

QUAD

S-PQFP-G100

5.5 V

65536 bit

4.5 V

55 ns

70V9289L9PFG

Renesas Electronics

DUAL-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

230 mA

65536 words

COMMON

3.3

3.3

16

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

70 Cel

3-STATE

64KX16

64K

3 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G100

3

3.6 V

1.6 mm

66 MHz

14 mm

Not Qualified

1048576 bit

3 V

FLOW-THROUGH OR PIPELINED ARCHITECTURE

e3

30

260

.002 Amp

14 mm

20 ns

7024S20PFB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

38535Q/M;38534H;883B

GULL WING

PARALLEL

ASYNCHRONOUS

370 mA

4096 words

COMMON

5

5

16

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

125 Cel

3-STATE

4KX16

4K

4.5 V

-55 Cel

Tin/Lead (Sn85Pb15)

QUAD

2

S-PQFP-G100

3

5.5 V

1.6 mm

14 mm

Not Qualified

65536 bit

4.5 V

4K X 16 DUAL PORT SRAM

e0

20

240

.00003 Amp

14 mm

20 ns

7024S70PFB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

MIL-PRF-38535

GULL WING

PARALLEL

ASYNCHRONOUS

300 mA

4096 words

COMMON

5

5

16

FLATPACK

QFP100,.63SQ,20

SRAMs

.5 mm

125 Cel

3-STATE

4KX16

4K

4.5 V

-55 Cel

Tin/Lead (Sn85Pb15)

QUAD

2

S-PQFP-G100

3

5.5 V

14 mm

Not Qualified

65536 bit

4.5 V

e0

20

240

.00003 Amp

14 mm

70 ns

70261S20PFGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16384 words

5

16

FLATPACK

85 Cel

16KX16

16K

-40 Cel

QUAD

S-PQFP-G100

5.5 V

262144 bit

4.5 V

20 ns

HM66WP18512FP-40

Renesas Electronics

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

524288 words

2.5

18

FLATPACK, LOW PROFILE

.65 mm

70 Cel

512KX18

512K

0 Cel

QUAD

R-PQFP-G100

2.625 V

1.6 mm

14 mm

Not Qualified

9437184 bit

2.375 V

PIPELINED ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY

20 mm

2.6 ns

70261L25PFGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16384 words

5

16

FLATPACK

85 Cel

16KX16

16K

-40 Cel

QUAD

S-PQFP-G100

5.5 V

262144 bit

4.5 V

25 ns

70P245L65BYI

Renesas Electronics

APPLICATION SPECIFIC SRAM

INDUSTRIAL

100

BGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

70 mA

4096 words

COMMON

1.8

1.8/3

16

GRID ARRAY

BGA100,10X10,20

SRAMs

.5 mm

85 Cel

3-STATE

4KX16

4K

-40 Cel

TIN LEAD

BOTTOM

2

S-PBGA-B100

1.9 V

Not Qualified

65536 bit

1.7 V

IT CAN ALSO OPERATE AT 2.5 TO 3 VOLT NOMINAL SUPPLY

e0

.000008 Amp

65 ns

70V9089L12PFGI

Renesas Electronics

DUAL-PORT SRAM

INDUSTRIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

65536 words

3.3

8

FLATPACK

85 Cel

64KX8

64K

-40 Cel

MATTE TIN

QUAD

S-PQFP-G100

3

3.6 V

524288 bit

3 V

e3

260

12 ns

70V9079S6PFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

395 mA

32768 words

COMMON

3.3

3.3

8

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

70 Cel

3-STATE

32KX8

32K

3 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G100

3

3.6 V

1.4 mm

100 MHz

14 mm

Not Qualified

262144 bit

3 V

FLOW-THROUGH OR PIPELINED ARCHITECTURE

e3

30

260

.005 Amp

14 mm

6.5 ns

7027L25PFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

5

16

FLATPACK

70 Cel

32KX16

32K

0 Cel

QUAD

S-PQFP-G100

5.5 V

524288 bit

4.5 V

25 ns

70V08S20PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

65536 words

3.3

8

FLATPACK

70 Cel

64KX8

64K

0 Cel

QUAD

S-PQFP-G100

3.6 V

524288 bit

3 V

20 ns

70P269L65BYI

Renesas Electronics

APPLICATION SPECIFIC SRAM

INDUSTRIAL

100

BGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

70 mA

16384 words

COMMON

1.8

1.8/3

16

GRID ARRAY

BGA100,10X10,20

SRAMs

.5 mm

85 Cel

3-STATE

16KX16

16K

-40 Cel

TIN LEAD

BOTTOM

2

S-PBGA-B100

1.9 V

Not Qualified

262144 bit

1.7 V

IT ALSO OPERATES AT SUPPLY VOLTAGE 2.5 V AND 3 V NOMINAL

e0

.006 Amp

65 ns

70V08S20PFGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

65536 words

3.3

8

FLATPACK

85 Cel

64KX8

64K

-40 Cel

QUAD

S-PQFP-G100

3.6 V

524288 bit

3 V

20 ns

70261S25PFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16384 words

5

16

FLATPACK

70 Cel

16KX16

16K

0 Cel

QUAD

S-PQFP-G100

5.5 V

262144 bit

4.5 V

25 ns

7024S17PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4096 words

5

16

FLATPACK, LOW PROFILE, FINE PITCH

.5 mm

70 Cel

4KX16

4K

0 Cel

MATTE TIN

QUAD

S-PQFP-G100

5.5 V

1.6 mm

14 mm

65536 bit

4.5 V

e3

14 mm

17 ns

70P255L90BYGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

BGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

60 mA

8192 words

COMMON

1.8

1.8/3

16

GRID ARRAY

BGA100,10X10,20

SRAMs

.5 mm

85 Cel

3-STATE

8KX16

8K

-40 Cel

TIN SILVER COPPER

BOTTOM

2

S-PBGA-B100

3

1.9 V

Not Qualified

131072 bit

1.7 V

IT CAN OPERATE ALSO 2.5 TO 3 VOLT

e1

30

260

.000008 Amp

90 ns

709379L12PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

32768 words

5

18

FLATPACK

70 Cel

32KX18

32K

0 Cel

QUAD

S-PQFP-G100

5.5 V

589824 bit

4.5 V

12 ns

70V08S35PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

65536 words

3.3

8

FLATPACK

70 Cel

64KX8

64K

0 Cel

QUAD

S-PQFP-G100

3.6 V

524288 bit

3 V

35 ns

7143LA25PFGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

300 mA

2048 words

5

16

FLATPACK

.5 mm

85 Cel

2KX16

2K

-40 Cel

QUAD

S-PQFP-G100

5.5 V

14 mm

32768 bit

4.5 V

14 mm

25 ns

HM67M3632FP-9

Renesas Electronics

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

GULL WING

PARALLEL

SYNCHRONOUS

32768 words

3.3

36

FLATPACK, LOW PROFILE

.65 mm

70 Cel

32KX36

32K

0 Cel

QUAD

R-PQFP-G100

3.465 V

1.6 mm

14 mm

Not Qualified

1179648 bit

3.135 V

SELF-TIMED WRITE; BURST COUNTER

20 mm

9 ns

7143LA55PFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

250 mA

2048 words

5

16

FLATPACK

.5 mm

70 Cel

2KX16

2K

0 Cel

QUAD

S-PQFP-G100

5.5 V

14 mm

32768 bit

4.5 V

14 mm

55 ns

7143LA25PFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

220 mA

2048 words

5

16

FLATPACK

.5 mm

70 Cel

2KX16

2K

0 Cel

QUAD

S-PQFP-G100

5.5 V

14 mm

32768 bit

4.5 V

14 mm

25 ns

70V9289L12PFG8

Renesas Electronics

DUAL-PORT SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

200 mA

65536 words

COMMON

3.3

3.3

16

FLATPACK

QFP100,.63SQ,20

SRAMs

.5 mm

70 Cel

3-STATE

64KX16

64K

3 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G100

3

3.6 V

50 MHz

Not Qualified

1048576 bit

3 V

e3

30

260

.002 Amp

12 ns

70V09L20PFGI8

Renesas Electronics

DUAL-PORT SRAM

INDUSTRIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

220 mA

131072 words

COMMON

3.3

3.3

8

FLATPACK

QFP100,.63SQ,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX8

128K

3 V

-40 Cel

TIN

QUAD

2

S-PQFP-G100

3

3.6 V

Not Qualified

1048576 bit

3 V

e3

260

.003 Amp

20 ns

70V9169L9PFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

230 mA

16384 words

COMMON

3.3

9

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

.5 mm

70 Cel

3-STATE

16KX9

16K

3 V

0 Cel

QUAD

2

S-PQFP-G100

3.6 V

1.6 mm

14 mm

147456 bit

3 V

PIPELINED OR FLOW THROUGH ARCHITECTURE

YES

.003 Amp

14 mm

9 ns

709159L9BF

Renesas Electronics

MULTI-PORT SRAM

100

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

360 mA

8192 words

COMMON

5

9

70 Cel

3-STATE

8KX9

8K

4.5 V

0 Cel

BOTTOM

2

S-PBGA-B100

5.5 V

73728 bit

4.5 V

FLOW-THROUGH OR PIPELINED ARCHITECTURE

YES

.003 Amp

9 ns

70P259L65BYGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

70 mA

8192 words

COMMON

2.6

1.8/3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA100,10X10,20

SRAMs

.5 mm

85 Cel

3-STATE

8KX16

8K

-40 Cel

TIN SILVER COPPER

BOTTOM

2

S-PBGA-B100

3

3 V

1 mm

6 mm

Not Qualified

131072 bit

1.8 V

e1

30

260

.006 Amp

6 mm

40 ns

709159L7BFI

Renesas Electronics

MULTI-PORT SRAM

100

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

440 mA

8192 words

COMMON

5

9

85 Cel

3-STATE

8KX9

8K

4.5 V

-40 Cel

BOTTOM

2

S-PBGA-B100

5.5 V

73728 bit

4.5 V

FLOW-THROUGH OR PIPELINED ARCHITECTURE

YES

.003 Amp

7.5 ns

7143LA70PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

250 mA

2048 words

5

16

FLATPACK

.5 mm

70 Cel

2KX16

2K

0 Cel

QUAD

S-PQFP-G100

5.5 V

14 mm

32768 bit

4.5 V

14 mm

70 ns

70V9079S12PFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

240 mA

32768 words

COMMON

3.3

3.3

8

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

70 Cel

3-STATE

32KX8

32K

3 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G100

3

3.6 V

1.4 mm

50 MHz

14 mm

Not Qualified

262144 bit

3 V

FLOW-THROUGH OR PIPELINED ARCHITECTURE

e3

30

260

.005 Amp

14 mm

12 ns

HM66WP36513FP-85

Renesas Electronics

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

524288 words

2.5

36

FLATPACK, LOW PROFILE

.65 mm

70 Cel

512KX36

512K

0 Cel

QUAD

R-PQFP-G100

2.625 V

1.6 mm

14 mm

Not Qualified

18874368 bit

2.375 V

FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY

20 mm

8.5 ns

70V35L20PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

3.3

18

FLATPACK

70 Cel

8KX18

8K

0 Cel

QUAD

S-PQFP-G100

3.6 V

147456 bit

3 V

30

260

20 ns

HM66WP36257FP-75

Renesas Electronics

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

262144 words

2.5

36

FLATPACK, LOW PROFILE

.65 mm

70 Cel

256KX36

256K

0 Cel

QUAD

R-PQFP-G100

2.625 V

1.6 mm

14 mm

Not Qualified

9437184 bit

2.375 V

FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY

20 mm

7.5 ns

7143SA55PFGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

315 mA

2048 words

5

16

FLATPACK

.5 mm

85 Cel

2KX16

2K

-40 Cel

QUAD

S-PQFP-G100

5.5 V

14 mm

32768 bit

4.5 V

14 mm

55 ns

HM66WP36256FP-50

Renesas Electronics

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

262144 words

2.5

36

FLATPACK, LOW PROFILE

.65 mm

70 Cel

256KX36

256K

0 Cel

QUAD

R-PQFP-G100

2.625 V

1.6 mm

14 mm

Not Qualified

9437184 bit

2.375 V

PIPELINED ARCHITECTURE

20 mm

3 ns

7024S20PFGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4096 words

5

16

FLATPACK, LOW PROFILE, FINE PITCH

.5 mm

85 Cel

4KX16

4K

-40 Cel

MATTE TIN

QUAD

S-PQFP-G100

5.5 V

1.6 mm

14 mm

65536 bit

4.5 V

e3

14 mm

20 ns

7143SA55PFGB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

MIL-PRF-38535

GULL WING

PARALLEL

ASYNCHRONOUS

315 mA

2048 words

5

16

FLATPACK

.5 mm

125 Cel

2KX16

2K

-55 Cel

QUAD

S-PQFP-G100

5.5 V

14 mm

32768 bit

4.5 V

14 mm

55 ns

HM66WP36257FP-65

Renesas Electronics

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

262144 words

2.5

36

FLATPACK, LOW PROFILE

.65 mm

70 Cel

256KX36

256K

0 Cel

QUAD

R-PQFP-G100

2.625 V

1.6 mm

14 mm

Not Qualified

9437184 bit

2.375 V

FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY

20 mm

6.5 ns

7027S20PFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

5

16

FLATPACK

70 Cel

32KX16

32K

0 Cel

QUAD

S-PQFP-G100

5.5 V

524288 bit

4.5 V

20 ns

70P259L90BYI

Renesas Electronics

APPLICATION SPECIFIC SRAM

INDUSTRIAL

100

BGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

60 mA

8192 words

COMMON

1.8

1.8/3

16

GRID ARRAY

BGA100,10X10,20

SRAMs

.5 mm

85 Cel

3-STATE

8KX16

8K

-40 Cel

TIN LEAD

BOTTOM

2

S-PBGA-B100

1.9 V

Not Qualified

131072 bit

1.7 V

IT ALSO OPERATES AT SUPPLY VOLTAGE 2.5 V AND 3 V NOMINAL

e0

.006 Amp

90 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.