Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
4194304 words |
COMMON |
2.5/3.3,3.3 |
18 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX18 |
4M |
3.14 V |
0 Cel |
BOTTOM |
R-PBGA-B119 |
300 MHz |
Not Qualified |
75497472 bit |
2.2 ns |
||||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
300 mA |
1048576 words |
COMMON |
2.5/3.3,3.3 |
18 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
1MX18 |
1M |
3.14 V |
-40 Cel |
BOTTOM |
R-PBGA-B119 |
200 MHz |
Not Qualified |
18874368 bit |
.06 Amp |
3 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
265 mA |
131072 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
R-PBGA-B119 |
3 |
3.6 V |
2.4 mm |
200 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e1 |
20 |
260 |
.04 Amp |
22 mm |
2.8 ns |
||||||||||
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
325 mA |
524288 words |
COMMON |
2.5/3.3,3.3 |
36 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX36 |
512K |
3.14 V |
-40 Cel |
BOTTOM |
R-PBGA-B119 |
225 MHz |
Not Qualified |
18874368 bit |
.06 Amp |
2.8 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
119 |
HBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
250 mA |
524288 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
GRID ARRAY, HEAT SINK/SLUG |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
0 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
R-PBGA-B119 |
3 |
3.6 V |
2.4 mm |
225 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
e1 |
20 |
260 |
.04 Amp |
22 mm |
2.8 ns |
|||||||||||
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
275 mA |
524288 words |
COMMON |
2.5/3.3,3.3 |
36 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX36 |
512K |
3.14 V |
-40 Cel |
BOTTOM |
R-PBGA-B119 |
167 MHz |
Not Qualified |
18874368 bit |
.07 Amp |
3.4 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
119 |
HBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
250 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
GRID ARRAY, HEAT SINK/SLUG |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
R-PBGA-B119 |
3 |
3.6 V |
2.4 mm |
225 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
e1 |
20 |
260 |
.04 Amp |
22 mm |
2.8 ns |
|||||||||||
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
300 mA |
524288 words |
COMMON |
2.5/3.3,3.3 |
36 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX36 |
512K |
3.14 V |
-40 Cel |
BOTTOM |
R-PBGA-B119 |
200 MHz |
Not Qualified |
18874368 bit |
.06 Amp |
3 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
275 mA |
1048576 words |
COMMON |
2.5/3.3,3.3 |
18 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX18 |
1M |
3.14 V |
0 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B119 |
3 |
167 MHz |
Not Qualified |
18874368 bit |
e1 |
20 |
260 |
.07 Amp |
3.4 ns |
||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
300 mA |
524288 words |
COMMON |
2.5/3.3,3.3 |
36 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX36 |
512K |
3.14 V |
0 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B119 |
3 |
200 MHz |
Not Qualified |
18874368 bit |
e1 |
20 |
260 |
.07 Amp |
3 ns |
||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
119 |
HBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
36 mA |
524288 words |
COMMON |
3 |
32 |
GRID ARRAY, HEAT SINK/SLUG |
BGA119,7X17,50 |
1.27 mm |
85 Cel |
3-STATE |
512KX32 |
512K |
1 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
1 |
R-PBGA-B119 |
3 |
3.6 V |
2.4 mm |
14 mm |
16777216 bit |
2.2 V |
e1 |
260 |
YES |
.000016 Amp |
22 mm |
45 ns |
||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
4194304 words |
COMMON |
2.5/3.3,3.3 |
18 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX18 |
4M |
3.14 V |
0 Cel |
BOTTOM |
R-PBGA-B119 |
300 MHz |
Not Qualified |
75497472 bit |
2.2 ns |
||||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
325 mA |
1048576 words |
COMMON |
2.5/3.3,3.3 |
18 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
1MX18 |
1M |
3.14 V |
-40 Cel |
BOTTOM |
R-PBGA-B119 |
225 MHz |
Not Qualified |
18874368 bit |
.06 Amp |
2.8 ns |
||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
300 mA |
524288 words |
COMMON |
2.5/3.3,3.3 |
36 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX36 |
512K |
3.14 V |
-40 Cel |
BOTTOM |
R-PBGA-B119 |
200 MHz |
Not Qualified |
18874368 bit |
.07 Amp |
3 ns |
||||||||||||||||||||||||
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
230 mA |
524288 words |
COMMON |
2.5/3.3,3.3 |
36 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX36 |
512K |
3.14 V |
0 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B119 |
166 MHz |
Not Qualified |
18874368 bit |
e0 |
.03 Amp |
3.4 ns |
||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
220 mA |
262144 words |
COMMON |
2.5/3.3,3.3 |
36 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
0 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B119 |
3 |
200 MHz |
Not Qualified |
9437184 bit |
e0 |
220 |
.04 Amp |
3 ns |
||||||||||||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
225 mA |
131072 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B119 |
3 |
3.6 V |
2.4 mm |
133 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e1 |
20 |
260 |
.04 Amp |
22 mm |
4 ns |
||||||||||
|
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
350 mA |
524288 words |
COMMON |
2.5/3.3,3.3 |
36 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX36 |
512K |
3.14 V |
0 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B119 |
3 |
250 MHz |
Not Qualified |
18874368 bit |
e1 |
20 |
260 |
.07 Amp |
2.6 ns |
||||||||||||||||||
|
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
250 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
0 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
R-PBGA-B119 |
3 |
3.6 V |
2.4 mm |
250 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e1 |
20 |
260 |
.04 Amp |
22 mm |
2.8 ns |
||||||||||
|
Infineon Technologies |
CACHE SRAM |
INDUSTRIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
180 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B119 |
3 |
3.6 V |
2.4 mm |
100 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
FLOW THROUGH ARCHITECTURE |
e1 |
20 |
260 |
.04 Amp |
22 mm |
8.5 ns |
||||||||||
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
4194304 words |
COMMON |
2.5/3.3,3.3 |
18 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX18 |
4M |
3.14 V |
0 Cel |
BOTTOM |
R-PBGA-B119 |
300 MHz |
Not Qualified |
75497472 bit |
2.2 ns |
||||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
350 mA |
524288 words |
COMMON |
2.5/3.3,3.3 |
36 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX36 |
512K |
3.14 V |
-40 Cel |
BOTTOM |
R-PBGA-B119 |
250 MHz |
Not Qualified |
18874368 bit |
.07 Amp |
2.6 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
CACHE SRAM |
INDUSTRIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
250 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B119 |
3 |
3.6 V |
2.4 mm |
133 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
FLOW THROUGH ARCHITECTURE |
e1 |
20 |
260 |
.04 Amp |
22 mm |
6.5 ns |
||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
119 |
HBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
250 mA |
524288 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
GRID ARRAY, HEAT SINK/SLUG |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
R-PBGA-B119 |
3 |
3.6 V |
2.4 mm |
225 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
e1 |
20 |
260 |
.04 Amp |
22 mm |
2.8 ns |
|||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
250 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B119 |
3 |
3.6 V |
2.4 mm |
250 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e1 |
20 |
260 |
.04 Amp |
22 mm |
2.8 ns |
||||||||||
|
Infineon Technologies |
CACHE SRAM |
INDUSTRIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
220 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B119 |
3 |
3.6 V |
2.4 mm |
200 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e1 |
20 |
260 |
.04 Amp |
22 mm |
3 ns |
||||||||||
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
230 mA |
1048576 words |
COMMON |
2.5/3.3,3.3 |
18 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX18 |
1M |
3.14 V |
0 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B119 |
166 MHz |
Not Qualified |
18874368 bit |
e0 |
.03 Amp |
3.4 ns |
||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
119 |
HBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
524288 words |
1.8 |
32 |
GRID ARRAY, HEAT SINK/SLUG |
1.27 mm |
85 Cel |
512KX32 |
512K |
-40 Cel |
BOTTOM |
R-PBGA-B119 |
2.2 V |
2.4 mm |
14 mm |
16777216 bit |
1.65 V |
22 mm |
45 ns |
||||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
300 mA |
524288 words |
COMMON |
2.5/3.3,3.3 |
36 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX36 |
512K |
3.14 V |
0 Cel |
BOTTOM |
R-PBGA-B119 |
200 MHz |
Not Qualified |
18874368 bit |
.07 Amp |
3 ns |
||||||||||||||||||||||||
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
4194304 words |
COMMON |
1.8/2.5,2.5 |
18 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX18 |
4M |
2.38 V |
0 Cel |
BOTTOM |
R-PBGA-B119 |
300 MHz |
Not Qualified |
75497472 bit |
2.2 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
300 mA |
1048576 words |
COMMON |
2.5/3.3,3.3 |
18 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
1MX18 |
1M |
3.14 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B119 |
3 |
200 MHz |
Not Qualified |
18874368 bit |
e1 |
20 |
260 |
.07 Amp |
3.4 ns |
||||||||||||||||||
|
Infineon Technologies |
CACHE SRAM |
INDUSTRIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
180 mA |
524288 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B119 |
3 |
3.6 V |
2.4 mm |
166 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e1 |
20 |
260 |
.04 Amp |
22 mm |
3.5 ns |
||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
119 |
HBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
524288 words |
3 |
32 |
GRID ARRAY, HEAT SINK/SLUG |
1.27 mm |
85 Cel |
512KX32 |
512K |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B119 |
3 |
3.6 V |
2.4 mm |
14 mm |
16777216 bit |
2.2 V |
e1 |
260 |
22 mm |
10 ns |
||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
275 mA |
1048576 words |
COMMON |
2.5/3.3,3.3 |
18 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX18 |
1M |
3.14 V |
0 Cel |
BOTTOM |
R-PBGA-B119 |
167 MHz |
Not Qualified |
18874368 bit |
.07 Amp |
3.4 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
CACHE SRAM |
INDUSTRIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
180 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B119 |
3 |
3.6 V |
2.4 mm |
166 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e1 |
20 |
260 |
.04 Amp |
22 mm |
3.5 ns |
||||||||||
|
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
300 mA |
1048576 words |
COMMON |
2.5/3.3,3.3 |
18 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX18 |
1M |
3.14 V |
0 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B119 |
3 |
200 MHz |
Not Qualified |
18874368 bit |
e1 |
20 |
260 |
.07 Amp |
3.4 ns |
||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
300 mA |
1048576 words |
COMMON |
2.5/3.3,3.3 |
18 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
1MX18 |
1M |
3.14 V |
-40 Cel |
BOTTOM |
R-PBGA-B119 |
200 MHz |
Not Qualified |
18874368 bit |
.07 Amp |
3.4 ns |
||||||||||||||||||||||||
Infineon Technologies |
CACHE SRAM |
INDUSTRIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
180 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B119 |
3 |
3.6 V |
2.4 mm |
100 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
FLOW THROUGH ARCHITECTURE |
e0 |
.04 Amp |
22 mm |
8.5 ns |
|||||||||||||
Infineon Technologies |
CACHE SRAM |
INDUSTRIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
220 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B119 |
3 |
3.6 V |
2.4 mm |
200 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e0 |
.04 Amp |
22 mm |
3 ns |
|||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
300 mA |
524288 words |
COMMON |
2.5/3.3,3.3 |
36 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX36 |
512K |
3.14 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B119 |
3 |
200 MHz |
Not Qualified |
18874368 bit |
e1 |
20 |
260 |
.07 Amp |
3 ns |
||||||||||||||||||
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
2097152 words |
COMMON |
2.5/3.3,3.3 |
36 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX36 |
2M |
3.14 V |
0 Cel |
BOTTOM |
R-PBGA-B119 |
300 MHz |
Not Qualified |
75497472 bit |
2.2 ns |
||||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
350 mA |
1048576 words |
COMMON |
2.5/3.3,3.3 |
18 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX18 |
1M |
3.14 V |
0 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B119 |
100 MHz |
Not Qualified |
18874368 bit |
e0 |
.015 Amp |
5 ns |
||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
300 mA |
1048576 words |
COMMON |
2.5/3.3,3.3 |
18 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX18 |
1M |
3.14 V |
0 Cel |
BOTTOM |
R-PBGA-B119 |
200 MHz |
Not Qualified |
18874368 bit |
.07 Amp |
3.4 ns |
||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
190 mA |
1048576 words |
COMMON |
2.5 |
2.5 |
18 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
1MX18 |
1M |
2.38 V |
-40 Cel |
BOTTOM |
R-PBGA-B119 |
150 MHz |
Not Qualified |
18874368 bit |
.03 Amp |
3.8 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
350 mA |
524288 words |
COMMON |
2.5/3.3,3.3 |
36 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX36 |
512K |
3.14 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B119 |
3 |
250 MHz |
Not Qualified |
18874368 bit |
e1 |
20 |
260 |
.07 Amp |
2.6 ns |
||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
250 mA |
1048576 words |
COMMON |
2.5/3.3,3.3 |
18 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX18 |
1M |
3.14 V |
0 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B119 |
166 MHz |
Not Qualified |
18874368 bit |
e0 |
.015 Amp |
3.4 ns |
||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
160 mA |
1048576 words |
COMMON |
2.5 |
2.5 |
18 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
1MX18 |
1M |
2.38 V |
-40 Cel |
BOTTOM |
R-PBGA-B119 |
133 MHz |
Not Qualified |
18874368 bit |
.03 Amp |
4.2 ns |
|||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
119 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
350 mA |
1048576 words |
COMMON |
2.5/3.3,3.3 |
18 |
GRID ARRAY |
BGA119,7X17,50 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX18 |
1M |
3.14 V |
0 Cel |
BOTTOM |
R-PBGA-B119 |
250 MHz |
Not Qualified |
18874368 bit |
.07 Amp |
3.4 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.