119 SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

CY7C1485V33-300BGC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

COMMON

2.5/3.3,3.3

18

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

70 Cel

3-STATE

4MX18

4M

3.14 V

0 Cel

BOTTOM

R-PBGA-B119

300 MHz

Not Qualified

75497472 bit

2.2 ns

CY7C1382C-200BGI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

300 mA

1048576 words

COMMON

2.5/3.3,3.3

18

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

1MX18

1M

3.14 V

-40 Cel

BOTTOM

R-PBGA-B119

200 MHz

Not Qualified

18874368 bit

.06 Amp

3 ns

CY7C1350G-200BGXI

Infineon Technologies

ZBT SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

265 mA

131072 words

COMMON

3.3

2.5/3.3,3.3

36

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

128KX36

128K

3.14 V

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

R-PBGA-B119

3

3.6 V

2.4 mm

200 MHz

14 mm

Not Qualified

4718592 bit

3.135 V

PIPELINED ARCHITECTURE

e1

20

260

.04 Amp

22 mm

2.8 ns

CY7C1380C-225BGI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

325 mA

524288 words

COMMON

2.5/3.3,3.3

36

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

512KX36

512K

3.14 V

-40 Cel

BOTTOM

R-PBGA-B119

225 MHz

Not Qualified

18874368 bit

.06 Amp

2.8 ns

CY7C1356C-225BGXC

Infineon Technologies

ZBT SRAM

COMMERCIAL

119

HBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

250 mA

524288 words

COMMON

3.3

2.5/3.3,3.3

18

GRID ARRAY, HEAT SINK/SLUG

BGA119,7X17,50

SRAMs

1.27 mm

70 Cel

3-STATE

512KX18

512K

3.14 V

0 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

R-PBGA-B119

3

3.6 V

2.4 mm

225 MHz

14 mm

Not Qualified

9437184 bit

3.135 V

e1

20

260

.04 Amp

22 mm

2.8 ns

CY7C1386F-167BGI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

275 mA

524288 words

COMMON

2.5/3.3,3.3

36

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

512KX36

512K

3.14 V

-40 Cel

BOTTOM

R-PBGA-B119

167 MHz

Not Qualified

18874368 bit

.07 Amp

3.4 ns

CY7C1354C-225BGXI

Infineon Technologies

ZBT SRAM

INDUSTRIAL

119

HBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

250 mA

262144 words

COMMON

3.3

2.5/3.3,3.3

36

GRID ARRAY, HEAT SINK/SLUG

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

256KX36

256K

3.14 V

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

R-PBGA-B119

3

3.6 V

2.4 mm

225 MHz

14 mm

Not Qualified

9437184 bit

3.135 V

e1

20

260

.04 Amp

22 mm

2.8 ns

CY7C1380C-200BGI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

300 mA

524288 words

COMMON

2.5/3.3,3.3

36

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

512KX36

512K

3.14 V

-40 Cel

BOTTOM

R-PBGA-B119

200 MHz

Not Qualified

18874368 bit

.06 Amp

3 ns

CY7C1387F-167BGXC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

275 mA

1048576 words

COMMON

2.5/3.3,3.3

18

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

70 Cel

3-STATE

1MX18

1M

3.14 V

0 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B119

3

167 MHz

Not Qualified

18874368 bit

e1

20

260

.07 Amp

3.4 ns

CY7C1386F-200BGXC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

300 mA

524288 words

COMMON

2.5/3.3,3.3

36

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

70 Cel

3-STATE

512KX36

512K

3.14 V

0 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B119

3

200 MHz

Not Qualified

18874368 bit

e1

20

260

.07 Amp

3 ns

CY62162G30-45BGXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

119

HBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

36 mA

524288 words

COMMON

3

32

GRID ARRAY, HEAT SINK/SLUG

BGA119,7X17,50

1.27 mm

85 Cel

3-STATE

512KX32

512K

1 V

-40 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B119

3

3.6 V

2.4 mm

14 mm

16777216 bit

2.2 V

e1

260

YES

.000016 Amp

22 mm

45 ns

CY7C1482V33-300BGC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

COMMON

2.5/3.3,3.3

18

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

70 Cel

3-STATE

4MX18

4M

3.14 V

0 Cel

BOTTOM

R-PBGA-B119

300 MHz

Not Qualified

75497472 bit

2.2 ns

CY7C1382C-225BGI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

325 mA

1048576 words

COMMON

2.5/3.3,3.3

18

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

1MX18

1M

3.14 V

-40 Cel

BOTTOM

R-PBGA-B119

225 MHz

Not Qualified

18874368 bit

.06 Amp

2.8 ns

CY7C1386F-200BGI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

300 mA

524288 words

COMMON

2.5/3.3,3.3

36

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

512KX36

512K

3.14 V

-40 Cel

BOTTOM

R-PBGA-B119

200 MHz

Not Qualified

18874368 bit

.07 Amp

3 ns

CY7C1370B-166BGC

Infineon Technologies

ZBT SRAM

COMMERCIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

230 mA

524288 words

COMMON

2.5/3.3,3.3

36

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

70 Cel

3-STATE

512KX36

512K

3.14 V

0 Cel

Tin/Lead (Sn/Pb)

BOTTOM

R-PBGA-B119

166 MHz

Not Qualified

18874368 bit

e0

.03 Amp

3.4 ns

CY7C1360C-200BGCT

Infineon Technologies

STANDARD SRAM

COMMERCIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

220 mA

262144 words

COMMON

2.5/3.3,3.3

36

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

70 Cel

3-STATE

256KX36

256K

3.14 V

0 Cel

TIN LEAD

BOTTOM

R-PBGA-B119

3

200 MHz

Not Qualified

9437184 bit

e0

220

.04 Amp

3 ns

CY7C1350G-133BGXI

Infineon Technologies

ZBT SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

225 mA

131072 words

COMMON

3.3

2.5/3.3,3.3

36

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

128KX36

128K

3.14 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B119

3

3.6 V

2.4 mm

133 MHz

14 mm

Not Qualified

4718592 bit

3.135 V

PIPELINED ARCHITECTURE

e1

20

260

.04 Amp

22 mm

4 ns

CY7C1386F-250BGXC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

350 mA

524288 words

COMMON

2.5/3.3,3.3

36

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

70 Cel

3-STATE

512KX36

512K

3.14 V

0 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B119

3

250 MHz

Not Qualified

18874368 bit

e1

20

260

.07 Amp

2.6 ns

CY7C1354C-250BGXC

Infineon Technologies

ZBT SRAM

COMMERCIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

250 mA

262144 words

COMMON

3.3

2.5/3.3,3.3

36

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

70 Cel

3-STATE

256KX36

256K

3.14 V

0 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

R-PBGA-B119

3

3.6 V

2.4 mm

250 MHz

14 mm

Not Qualified

9437184 bit

3.135 V

PIPELINED ARCHITECTURE

e1

20

260

.04 Amp

22 mm

2.8 ns

CY7C1361C-100BGXI

Infineon Technologies

CACHE SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

180 mA

262144 words

COMMON

3.3

2.5/3.3,3.3

36

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

256KX36

256K

3.14 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B119

3

3.6 V

2.4 mm

100 MHz

14 mm

Not Qualified

9437184 bit

3.135 V

FLOW THROUGH ARCHITECTURE

e1

20

260

.04 Amp

22 mm

8.5 ns

CY7C1472V33-300BGC

Infineon Technologies

ZBT SRAM

COMMERCIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

COMMON

2.5/3.3,3.3

18

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

70 Cel

3-STATE

4MX18

4M

3.14 V

0 Cel

BOTTOM

R-PBGA-B119

300 MHz

Not Qualified

75497472 bit

2.2 ns

CY7C1386F-250BGI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

350 mA

524288 words

COMMON

2.5/3.3,3.3

36

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

512KX36

512K

3.14 V

-40 Cel

BOTTOM

R-PBGA-B119

250 MHz

Not Qualified

18874368 bit

.07 Amp

2.6 ns

CY7C1361C-133BGXI

Infineon Technologies

CACHE SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

250 mA

262144 words

COMMON

3.3

2.5/3.3,3.3

36

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

256KX36

256K

3.14 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B119

3

3.6 V

2.4 mm

133 MHz

14 mm

Not Qualified

9437184 bit

3.135 V

FLOW THROUGH ARCHITECTURE

e1

20

260

.04 Amp

22 mm

6.5 ns

CY7C1356C-225BGXI

Infineon Technologies

ZBT SRAM

INDUSTRIAL

119

HBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

250 mA

524288 words

COMMON

3.3

2.5/3.3,3.3

18

GRID ARRAY, HEAT SINK/SLUG

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

512KX18

512K

3.14 V

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

R-PBGA-B119

3

3.6 V

2.4 mm

225 MHz

14 mm

Not Qualified

9437184 bit

3.135 V

e1

20

260

.04 Amp

22 mm

2.8 ns

CY7C1354C-250BGXI

Infineon Technologies

ZBT SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

250 mA

262144 words

COMMON

3.3

2.5/3.3,3.3

36

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

256KX36

256K

3.14 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B119

3

3.6 V

2.4 mm

250 MHz

14 mm

Not Qualified

9437184 bit

3.135 V

PIPELINED ARCHITECTURE

e1

20

260

.04 Amp

22 mm

2.8 ns

CY7C1360C-200BGXI

Infineon Technologies

CACHE SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

220 mA

262144 words

COMMON

3.3

2.5/3.3,3.3

36

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

256KX36

256K

3.14 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B119

3

3.6 V

2.4 mm

200 MHz

14 mm

Not Qualified

9437184 bit

3.135 V

PIPELINED ARCHITECTURE

e1

20

260

.04 Amp

22 mm

3 ns

CY7C1372B-166BGC

Infineon Technologies

ZBT SRAM

COMMERCIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

230 mA

1048576 words

COMMON

2.5/3.3,3.3

18

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

70 Cel

3-STATE

1MX18

1M

3.14 V

0 Cel

Tin/Lead (Sn/Pb)

BOTTOM

R-PBGA-B119

166 MHz

Not Qualified

18874368 bit

e0

.03 Amp

3.4 ns

CY62162G18-45BGXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

119

HBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

524288 words

1.8

32

GRID ARRAY, HEAT SINK/SLUG

1.27 mm

85 Cel

512KX32

512K

-40 Cel

BOTTOM

R-PBGA-B119

2.2 V

2.4 mm

14 mm

16777216 bit

1.65 V

22 mm

45 ns

CY7C1386F-200BGC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

300 mA

524288 words

COMMON

2.5/3.3,3.3

36

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

70 Cel

3-STATE

512KX36

512K

3.14 V

0 Cel

BOTTOM

R-PBGA-B119

200 MHz

Not Qualified

18874368 bit

.07 Amp

3 ns

CY7C1472V25-300BGC

Infineon Technologies

ZBT SRAM

COMMERCIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

4194304 words

COMMON

1.8/2.5,2.5

18

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

70 Cel

3-STATE

4MX18

4M

2.38 V

0 Cel

BOTTOM

R-PBGA-B119

300 MHz

Not Qualified

75497472 bit

2.2 ns

CY7C1387F-200BGXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

300 mA

1048576 words

COMMON

2.5/3.3,3.3

18

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

1MX18

1M

3.14 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B119

3

200 MHz

Not Qualified

18874368 bit

e1

20

260

.07 Amp

3.4 ns

CY7C1362C-166BGXI

Infineon Technologies

CACHE SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

180 mA

524288 words

COMMON

3.3

2.5/3.3,3.3

18

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

512KX18

512K

3.14 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B119

3

3.6 V

2.4 mm

166 MHz

14 mm

Not Qualified

9437184 bit

3.135 V

PIPELINED ARCHITECTURE

e1

20

260

.04 Amp

22 mm

3.5 ns

CY7C1062GE30-10BGXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

119

HBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

524288 words

3

32

GRID ARRAY, HEAT SINK/SLUG

1.27 mm

85 Cel

512KX32

512K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B119

3

3.6 V

2.4 mm

14 mm

16777216 bit

2.2 V

e1

260

22 mm

10 ns

CY7C1387F-167BGC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

275 mA

1048576 words

COMMON

2.5/3.3,3.3

18

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

70 Cel

3-STATE

1MX18

1M

3.14 V

0 Cel

BOTTOM

R-PBGA-B119

167 MHz

Not Qualified

18874368 bit

.07 Amp

3.4 ns

CY7C1360C-166BGXI

Infineon Technologies

CACHE SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

180 mA

262144 words

COMMON

3.3

2.5/3.3,3.3

36

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

256KX36

256K

3.14 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B119

3

3.6 V

2.4 mm

166 MHz

14 mm

Not Qualified

9437184 bit

3.135 V

PIPELINED ARCHITECTURE

e1

20

260

.04 Amp

22 mm

3.5 ns

CY7C1387F-200BGXC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

300 mA

1048576 words

COMMON

2.5/3.3,3.3

18

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

70 Cel

3-STATE

1MX18

1M

3.14 V

0 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B119

3

200 MHz

Not Qualified

18874368 bit

e1

20

260

.07 Amp

3.4 ns

CY7C1387F-200BGI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

300 mA

1048576 words

COMMON

2.5/3.3,3.3

18

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

1MX18

1M

3.14 V

-40 Cel

BOTTOM

R-PBGA-B119

200 MHz

Not Qualified

18874368 bit

.07 Amp

3.4 ns

CY7C1361C-100BGI

Infineon Technologies

CACHE SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

180 mA

262144 words

COMMON

3.3

2.5/3.3,3.3

36

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

256KX36

256K

3.14 V

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B119

3

3.6 V

2.4 mm

100 MHz

14 mm

Not Qualified

9437184 bit

3.135 V

FLOW THROUGH ARCHITECTURE

e0

.04 Amp

22 mm

8.5 ns

CY7C1360C-200BGI

Infineon Technologies

CACHE SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

220 mA

262144 words

COMMON

3.3

2.5/3.3,3.3

36

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

256KX36

256K

3.14 V

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B119

3

3.6 V

2.4 mm

200 MHz

14 mm

Not Qualified

9437184 bit

3.135 V

PIPELINED ARCHITECTURE

e0

.04 Amp

22 mm

3 ns

CY7C1386F-200BGXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

300 mA

524288 words

COMMON

2.5/3.3,3.3

36

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

512KX36

512K

3.14 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B119

3

200 MHz

Not Qualified

18874368 bit

e1

20

260

.07 Amp

3 ns

CY7C1470V33-300BGC

Infineon Technologies

ZBT SRAM

COMMERCIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

2097152 words

COMMON

2.5/3.3,3.3

36

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

70 Cel

3-STATE

2MX36

2M

3.14 V

0 Cel

BOTTOM

R-PBGA-B119

300 MHz

Not Qualified

75497472 bit

2.2 ns

CY7C1382AV25-100BGC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

350 mA

1048576 words

COMMON

2.5/3.3,3.3

18

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

70 Cel

3-STATE

1MX18

1M

3.14 V

0 Cel

Tin/Lead (Sn/Pb)

BOTTOM

R-PBGA-B119

100 MHz

Not Qualified

18874368 bit

e0

.015 Amp

5 ns

CY7C1387F-200BGC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

300 mA

1048576 words

COMMON

2.5/3.3,3.3

18

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

70 Cel

3-STATE

1MX18

1M

3.14 V

0 Cel

BOTTOM

R-PBGA-B119

200 MHz

Not Qualified

18874368 bit

.07 Amp

3.4 ns

CY7C1382BV25-150BGI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

190 mA

1048576 words

COMMON

2.5

2.5

18

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

1MX18

1M

2.38 V

-40 Cel

BOTTOM

R-PBGA-B119

150 MHz

Not Qualified

18874368 bit

.03 Amp

3.8 ns

CY7C1386F-250BGXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

350 mA

524288 words

COMMON

2.5/3.3,3.3

36

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

512KX36

512K

3.14 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B119

3

250 MHz

Not Qualified

18874368 bit

e1

20

260

.07 Amp

2.6 ns

CY7C1382AV25-167BGC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

250 mA

1048576 words

COMMON

2.5/3.3,3.3

18

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

70 Cel

3-STATE

1MX18

1M

3.14 V

0 Cel

Tin/Lead (Sn/Pb)

BOTTOM

R-PBGA-B119

166 MHz

Not Qualified

18874368 bit

e0

.015 Amp

3.4 ns

CY7C1382BV25-133BGI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

160 mA

1048576 words

COMMON

2.5

2.5

18

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

85 Cel

3-STATE

1MX18

1M

2.38 V

-40 Cel

BOTTOM

R-PBGA-B119

133 MHz

Not Qualified

18874368 bit

.03 Amp

4.2 ns

CY7C1387F-250BGC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

350 mA

1048576 words

COMMON

2.5/3.3,3.3

18

GRID ARRAY

BGA119,7X17,50

SRAMs

1.27 mm

70 Cel

3-STATE

1MX18

1M

3.14 V

0 Cel

BOTTOM

R-PBGA-B119

250 MHz

Not Qualified

18874368 bit

.07 Amp

3.4 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.