119 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY7C1387F-167BGXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	275 mA	1048576 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	1MX18	1M	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3			167 MHz		Not Qualified	18874368 bit			e1	20	260		.07 Amp		3.4 ns
CY7C1470V25-300BGC	Infineon Technologies	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	COMMON		1.8/2.5,2.5	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	2MX36	2M	2.38 V	0 Cel		BOTTOM		R-PBGA-B119				300 MHz		Not Qualified	75497472 bit									2.2 ns
CY7C1382AV25-133BGC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	310 mA	1048576 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119				133 MHz		Not Qualified	18874368 bit			e0				.015 Amp		4.2 ns
CY7C1356C-250BGXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.6 V	2.4 mm	250 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1	20	260		.04 Amp	22 mm	2.8 ns
CY7C1386F-167BGC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	275 mA	524288 words	COMMON		2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	3.14 V	0 Cel		BOTTOM		R-PBGA-B119				167 MHz		Not Qualified	18874368 bit							.07 Amp		3.4 ns
CY7C1386F-250BGC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	524288 words	COMMON		2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	3.14 V	0 Cel		BOTTOM		R-PBGA-B119				250 MHz		Not Qualified	18874368 bit							.07 Amp		2.6 ns
CY7C1387F-250BGXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	1048576 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	1MX18	1M	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3			250 MHz		Not Qualified	18874368 bit			e1	20	260		.07 Amp		3.4 ns
CY7C1382AV25-150BGC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	280 mA	1048576 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119				150 MHz		Not Qualified	18874368 bit			e0				.015 Amp		3.8 ns
CY7C1034DV33-10BGXI	Infineon Technologies	STANDARD SRAM		119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	175 mA	262144 words	COMMON	3.3		24	GRID ARRAY	BGA119,7X17,50		1.27 mm	85 Cel	3-STATE	256KX24	256K	2 V	-40 Cel		BOTTOM	1	R-PBGA-B119		3.6 V	2.4 mm		14 mm		6291456 bit	3 V					YES	.025 Amp	22 mm	10 ns
CY7C1024DV33-10BGXI	Infineon Technologies	STANDARD SRAM		119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	175 mA	131072 words	COMMON	3.3		24	GRID ARRAY	BGA119,7X17,50		1.27 mm	85 Cel	3-STATE	128KX24	128K	2 V	-40 Cel		BOTTOM	1	R-PBGA-B119		3.6 V	2.4 mm		14 mm		3145728 bit	3 V					YES	.025 Amp	22 mm	10 ns
CY7C1062GE30-10BGXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3		32	GRID ARRAY			1.27 mm	85 Cel		512KX32	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.6 V	2.4 mm		14 mm		16777216 bit	2.2 V		e1		260			22 mm	10 ns
CY7C1387F-250BGXC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	1048576 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3			250 MHz		Not Qualified	18874368 bit			e1	20	260		.07 Amp		3.4 ns
CY62162G18-55BGXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	119	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	32 mA	524288 words	COMMON	1.8		32	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50		1.27 mm	85 Cel	3-STATE	512KX32	512K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B119	3	2.2 V	2.4 mm		14 mm		16777216 bit	1.65 V		e1		260	YES	.000026 Amp	22 mm	55 ns
CY7C1361C-133BGI	Infineon Technologies	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3	3.6 V	2.4 mm	133 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW THROUGH ARCHITECTURE	e0				.04 Amp	22 mm	6.5 ns
HM66WP36512BP-50	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		36	GRID ARRAY			1.27 mm	70 Cel		512KX36	512K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		2.625 V	2.35 mm		14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY	e1					22 mm	3 ns
HM66WP18513BP-65	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		2.625 V	2.35 mm		14 mm	Not Qualified	9437184 bit	2.375 V	FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY	e1					22 mm	6.5 ns
HM66WP18100BP-50	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		2.5		18	GRID ARRAY			1.27 mm	70 Cel		1MX18	1M		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		2.625 V	2.35 mm		14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY	e1					22 mm	3 ns
HM66WP18513BP-85	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		2.625 V	2.35 mm		14 mm	Not Qualified	9437184 bit	2.375 V	FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY	e1					22 mm	8.5 ns
HM64YLB36512BP-28	Renesas Electronics	LATE-WRITE SRAM	OTHER	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	524288 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	512KX36	512K	2.38 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		2.63 V	2.24 mm	357 MHz	14 mm	Not Qualified	18874368 bit	2.38 V		e1				.15 Amp	22 mm	1.6 ns
HM67S3632BP-6	Renesas Electronics	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		32KX36	32K		0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.465 V	2.1 mm		14 mm	Not Qualified	1179648 bit	3.2 V		e0					22 mm	3.5 ns
HM67S18258BP-6	Renesas Electronics	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		3.465 V	2.1 mm		14 mm	Not Qualified	4718592 bit	3.135 V		e1					22 mm	6 ns
HM66WP36256BP-60	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		2.625 V	2.35 mm		14 mm	Not Qualified	9437184 bit	2.375 V	PIPELINED ARCHITECTURE	e1					22 mm	3.5 ns
HM66WP36257BP-75	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		2.625 V	2.35 mm		14 mm	Not Qualified	9437184 bit	2.375 V	FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY	e1					22 mm	7.5 ns
HM66WP36512BP-60	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		36	GRID ARRAY			1.27 mm	70 Cel		512KX36	512K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		2.625 V	2.35 mm		14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY	e1					22 mm	3.5 ns
HM66WP18100BP-60	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		2.5		18	GRID ARRAY			1.27 mm	70 Cel		1MX18	1M		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		2.625 V	2.35 mm		14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY	e1					22 mm	3.5 ns
HM66WP18101BP-75	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		2.5		18	GRID ARRAY			1.27 mm	70 Cel		1MX18	1M		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		2.625 V	2.35 mm		14 mm	Not Qualified	18874368 bit	2.375 V	FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY	e1					22 mm	7.5 ns
HM66WP36513BP-75	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		36	GRID ARRAY			1.27 mm	70 Cel		512KX36	512K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		2.625 V	2.35 mm		14 mm	Not Qualified	18874368 bit	2.375 V	FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY	e1					22 mm	7.5 ns
HM64YLB36512BP-33	Renesas Electronics	LATE-WRITE SRAM	OTHER	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	524288 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	512KX36	512K	2.38 V	0 Cel		BOTTOM		R-PBGA-B119	3	2.63 V	2.24 mm	303 MHz	14 mm	Not Qualified	18874368 bit	2.38 V			20	260		.15 Amp	22 mm	1.6 ns
HM66WP36256BP-50	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		2.625 V	2.35 mm		14 mm	Not Qualified	9437184 bit	2.375 V	PIPELINED ARCHITECTURE	e1					22 mm	3 ns
HM67S3632BP-7	Renesas Electronics	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		32KX36	32K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		3.465 V	2.1 mm		14 mm	Not Qualified	1179648 bit	3.2 V		e1					22 mm	4 ns
HM66WP36256BP-40	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		2.625 V	2.35 mm		14 mm	Not Qualified	9437184 bit	2.375 V	PIPELINED ARCHITECTURE	e1					22 mm	2.6 ns
HM64YLB36514BP-6H	Renesas Electronics	LATE-WRITE SRAM	OTHER	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	524288 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	512KX36	512K	2.38 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		2.63 V	2.24 mm	153 MHz	14 mm	Not Qualified	18874368 bit	2.38 V		e1				.15 Amp	22 mm	5.5 ns
HM66WP36513BP-65	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		36	GRID ARRAY			1.27 mm	70 Cel		512KX36	512K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		2.625 V	2.35 mm		14 mm	Not Qualified	18874368 bit	2.375 V	FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY	e1					22 mm	6.5 ns
HM66WP18101BP-65	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		2.5		18	GRID ARRAY			1.27 mm	70 Cel		1MX18	1M		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		2.625 V	2.35 mm		14 mm	Not Qualified	18874368 bit	2.375 V	FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY	e1					22 mm	6.5 ns
HM66WP36257BP-85	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		2.625 V	2.35 mm		14 mm	Not Qualified	9437184 bit	2.375 V	FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY	e1					22 mm	8.5 ns
HM67S36130BP-7	Renesas Electronics	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.465 V	2.35 mm		14 mm	Not Qualified	4718592 bit	3.135 V		e0					22 mm	7 ns
HM66WP18100BP-40	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		2.5		18	GRID ARRAY			1.27 mm	70 Cel		1MX18	1M		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		2.625 V	2.35 mm		14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY	e1					22 mm	2.6 ns
HM66WP36257BP-65	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		2.625 V	2.35 mm		14 mm	Not Qualified	9437184 bit	2.375 V	FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY	e1					22 mm	6.5 ns
HM67S18258BP-7H	Renesas Electronics	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		3.465 V	2.1 mm		14 mm	Not Qualified	4718592 bit	3.135 V		e1					22 mm	7.5 ns
HM67S36130BP-7H	Renesas Electronics	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		3.465 V	2.1 mm		14 mm	Not Qualified	4718592 bit	3.135 V		e1					22 mm	7.5 ns
HM66WP18512BP-50	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		2.625 V	2.35 mm		14 mm	Not Qualified	9437184 bit	2.375 V	PIPELINED ARCHITECTURE	e1					22 mm	3 ns
HM66WP18512BP-40	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		2.625 V	2.35 mm		14 mm	Not Qualified	9437184 bit	2.375 V	PIPELINED ARCHITECTURE	e1					22 mm	2.6 ns
HM66WP18101BP-85	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		2.5		18	GRID ARRAY			1.27 mm	70 Cel		1MX18	1M		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		2.625 V	2.35 mm		14 mm	Not Qualified	18874368 bit	2.375 V	FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY	e1					22 mm	8.5 ns
HM66WP18512BP-60	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		2.625 V	2.35 mm		14 mm	Not Qualified	9437184 bit	2.375 V	PIPELINED ARCHITECTURE	e1					22 mm	3.5 ns
HM64YGB36100BP-33	Renesas Electronics	LATE-WRITE SRAM	OTHER	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	550 mA	1048576 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	1MX36	1M	2.38 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		2.63 V	2.18 mm	300 MHz	14 mm	Not Qualified	37748736 bit	2.38 V		e0		240		.15 Amp	22 mm	1.6 ns
HM67S18258BP-7	Renesas Electronics	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	600 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		3.465 V	2.35 mm		14 mm	Not Qualified	4718592 bit	3.135 V		e1				.1 Amp	22 mm	7 ns
HM67S36130BP-6	Renesas Electronics	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.465 V	2.1 mm		14 mm	Not Qualified	4718592 bit	3.135 V		e0					22 mm	6 ns
HM67S3632BP-5	Renesas Electronics	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		32KX36	32K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		3.465 V	2.1 mm		14 mm	Not Qualified	1179648 bit	3.2 V	POWER DOWN OPTION; BYTE WRITE CONTROL	e1					22 mm	3 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.