144 SRAM 67

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MCM36F9DG10	NXP Semiconductors	SRAM MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	BICMOS	NO LEAD	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	MICROELECTRONIC ASSEMBLY				70 Cel		512KX36	512K		0 Cel		DUAL		R-XDMA-N144		3.6 V				Not Qualified	18874368 bit	3.135 V	FLOW-THROUGH ARCHITECTURE					10 ns
MCM36F8DG10	NXP Semiconductors	SRAM MODULE	COMMERCIAL	144	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	BICMOS	NO LEAD	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	MICROELECTRONIC ASSEMBLY			.8 mm	70 Cel		256KX36	256K		0 Cel		ZIG-ZAG		R-XZMA-N144		3.6 V	25.55 mm		3.8 mm		9437184 bit	3.135 V	WD-MAX				67.6 mm	10 ns
CY7C0831AV-167BBI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	144	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		128KX18	128K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B144		3.465 V	1.6 mm		13 mm	Not Qualified	2359296 bit	3.135 V	PIPELINED ARCHITECTURE	e0			13 mm	4 ns
7MPV6271S12M	Renesas Electronics	CACHE TAG SRAM MODULE	COMMERCIAL	144	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	500 mA	32768 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	SRAMs	.8 mm	70 Cel	3-STATE	32KX64	32K	3.14 V	0 Cel		DUAL		R-PDMA-N144						Not Qualified	262144 bit					.012 Amp		12 ns
70V525L55BZGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	144	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		8192 words		3		16	GRID ARRAY				85 Cel		8KX16	8K		-40 Cel	MATTE TIN	BOTTOM		S-PBGA-B144		3.3 V				Not Qualified	131072 bit	2.7 V		e3				55 ns
70P5258L55BZGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	144	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		8192 words		1.8		16	GRID ARRAY				85 Cel		8KX16	8K		-40 Cel	MATTE TIN	BOTTOM		S-PBGA-B144		1.9 V				Not Qualified	131072 bit	1.7 V		e3				55 ns
70V7319S133DD8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	144	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	645 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK	QFP144,.87SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	256KX18	256K	3.15 V	0 Cel	TIN LEAD	QUAD	2	S-PQFP-G144		3.45 V		133 MHz		Not Qualified	4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0		.00003 Amp		15 ns
70V7319S133DDI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	144	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	675 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK	QFP144,.87SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	256KX18	256K	3.15 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G144		3.45 V		133 MHz		Not Qualified	4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0		.00004 Amp		15 ns
70V7319S200DDI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	144	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	85 Cel		256KX18	256K		-40 Cel	TIN LEAD	QUAD		S-PQFP-G144	4	3.45 V	1.6 mm		20 mm	Not Qualified	4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0			20 mm	10 ns
70P525L55BZGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	144	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		8192 words		1.8		16	GRID ARRAY				85 Cel		8KX16	8K		-40 Cel	MATTE TIN	BOTTOM		S-PBGA-B144		1.9 V				Not Qualified	131072 bit	1.7 V		e3				55 ns
7MPV6271S15M	Renesas Electronics	CACHE TAG SRAM MODULE	COMMERCIAL	144	DIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	500 mA	32768 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	SRAMs	.8 mm	70 Cel	3-STATE	32KX64	32K	3.14 V	0 Cel		DUAL		R-PDMA-N144						Not Qualified	262144 bit					.012 Amp		15 ns
70V27L55BF	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	144	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	180 mA	32768 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA144,13X13,32	SRAMs	.8 mm	70 Cel	3-STATE	32KX16	32K	3 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B144	3					Not Qualified	524288 bit			e0		.003 Amp		55 ns
IDT70P5258ML55BZ	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	144	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		8192 words		1.8		16	GRID ARRAY				85 Cel		8KX16	8K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B144		1.9 V				Not Qualified	131072 bit	1.7 V		e0				55 ns
UPD48288118AF1-E18-DW1-A	Renesas Electronics	DDR SRAM		144	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		16777216 words		1.8		18	GRID ARRAY, THIN PROFILE			1 mm			16MX18	16M			TIN BISMUTH	BOTTOM		R-PBGA-B144		1.9 V	1.2 mm		11 mm		301989888 bit	1.7 V	IT ALSO OPERATES AT 2.5V	e6			18.5 mm
IDT70V7399S133DDGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	144	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		18	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	85 Cel		128KX18	128K		-40 Cel	MATTE TIN	QUAD		S-PQFP-G144		3.45 V	1.6 mm		20 mm	Not Qualified	2359296 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3			20 mm	15 ns
70V27S55BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	144	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	225 mA	32768 words	COMMON	3.3	3.3	16	GRID ARRAY	BGA144,13X13,32	SRAMs	.8 mm	70 Cel	3-STATE	32KX16	32K	3 V	0 Cel	MATTE TIN	BOTTOM	2	S-PBGA-B144		3.6 V				Not Qualified	524288 bit	3 V		e3		.006 Amp		55 ns
IDT70P525ML55BZ	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	144	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		8192 words		1.8		16	GRID ARRAY				85 Cel		8KX16	8K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B144		1.9 V				Not Qualified	131072 bit	1.7 V		e0				55 ns
IDT70V7399S166DDGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	144	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		18	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	85 Cel		128KX18	128K		-40 Cel	MATTE TIN	QUAD		S-PQFP-G144		3.45 V	1.6 mm		20 mm	Not Qualified	2359296 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3			20 mm	12 ns
IDT70V525L55BZGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	144	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		8192 words		3		16	GRID ARRAY				85 Cel		8KX16	8K		-40 Cel	MATTE TIN	BOTTOM		S-PBGA-B144		3.3 V				Not Qualified	131072 bit	2.7 V		e3				55 ns
70V27L55BFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	144	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		32768 words		3.3		16	GRID ARRAY				70 Cel		32KX16	32K		0 Cel		BOTTOM		S-PBGA-B144		3.6 V					524288 bit	3 V						55 ns
IDT70V27S55BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	144	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	225 mA	32768 words	COMMON	3.3	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,13X13,32	SRAMs	.8 mm	70 Cel	3-STATE	32KX16	32K	3 V	0 Cel	MATTE TIN	BOTTOM	2	S-PBGA-B144		3.6 V	1.5 mm		12 mm	Not Qualified	524288 bit	3 V		e3		.006 Amp	12 mm	55 ns
IDT70V525ML55BZ	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	144	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		8192 words		3		16	GRID ARRAY				85 Cel		8KX16	8K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B144		3.3 V				Not Qualified	131072 bit	2.7 V		e0				55 ns
IDT70V7399S166DDG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	144	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		18	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		128KX18	128K		0 Cel	MATTE TIN	QUAD		S-PQFP-G144		3.45 V	1.6 mm		20 mm	Not Qualified	2359296 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3			20 mm	12 ns
UPD48288218AF1-E24-DW1-A	Renesas Electronics	DDR SRAM		144	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		16777216 words		1.8		18	GRID ARRAY, THIN PROFILE			1 mm			16MX18	16M			TIN BISMUTH	BOTTOM		R-PBGA-B144		1.9 V	1.2 mm		11 mm		301989888 bit	1.7 V	TERM PITCH-MAX	e6			18.5 mm
UPD48288118AF1-E24-DW1-A	Renesas Electronics	DDR SRAM		144	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		16777216 words		1.8		18	GRID ARRAY, THIN PROFILE			1 mm			16MX18	16M			TIN BISMUTH	BOTTOM		R-PBGA-B144		1.9 V	1.2 mm		11 mm		301989888 bit	1.7 V	IT ALSO OPERATES AT 2.5V	e6			18.5 mm
IDT70V27L55BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	144	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	180 mA	32768 words	COMMON	3.3	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,13X13,32	SRAMs	.8 mm	70 Cel	3-STATE	32KX16	32K	3 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B144	3	3.6 V	1.5 mm		12 mm	Not Qualified	524288 bit	3 V	CONFIGURED AS 32K X 16	e0		.003 Amp	12 mm	55 ns
UPD48288236AF1-E18-DW1-A	Renesas Electronics	DDR SRAM		144	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.8		36	GRID ARRAY, THIN PROFILE			1 mm			8MX36	8M			TIN BISMUTH	BOTTOM		R-PBGA-B144		1.9 V	1.2 mm		11 mm		301989888 bit	1.7 V	TERM PITCH-MAX	e6			18.5 mm
IDT70P5258L55BZGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	144	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		8192 words		1.8		16	GRID ARRAY				85 Cel		8KX16	8K		-40 Cel	MATTE TIN	BOTTOM		S-PBGA-B144		1.9 V				Not Qualified	131072 bit	1.7 V		e3				55 ns
UPD48288236AF1-E24-DW1-A	Renesas Electronics	DDR SRAM		144	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.8		36	GRID ARRAY, THIN PROFILE			1 mm			8MX36	8M			TIN BISMUTH	BOTTOM		R-PBGA-B144		1.9 V	1.2 mm		11 mm		301989888 bit	1.7 V	TERM PITCH-MAX	e6			18.5 mm
70V27S55BF	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	144	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	225 mA	32768 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA144,13X13,32	SRAMs	.8 mm	70 Cel	3-STATE	32KX16	32K	3 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B144	3					Not Qualified	524288 bit			e0		.006 Amp		55 ns
IDT70V7399S133DDG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	144	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		18	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		128KX18	128K		0 Cel	MATTE TIN	QUAD		S-PQFP-G144		3.45 V	1.6 mm		20 mm	Not Qualified	2359296 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3			20 mm	15 ns
IDT70V27S55BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	144	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	225 mA	32768 words	COMMON	3.3	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,13X13,32	SRAMs	.8 mm	70 Cel	3-STATE	32KX16	32K	3 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B144	3	3.6 V	1.5 mm		12 mm	Not Qualified	524288 bit	3 V	CONFIGURED AS 32K X 16	e0		.006 Amp	12 mm	55 ns
UPD48288218AF1-E18-DW1-A	Renesas Electronics	DDR SRAM		144	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		16777216 words		1.8		18	GRID ARRAY, THIN PROFILE			1 mm			16MX18	16M			TIN BISMUTH	BOTTOM		R-PBGA-B144		1.9 V	1.2 mm		11 mm		301989888 bit	1.7 V	TERM PITCH-MAX	e6			18.5 mm
UPD48288209AF1-E24-DW1-A	Renesas Electronics	DDR SRAM		144	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		33554432 words		1.8		9	GRID ARRAY, THIN PROFILE			1 mm			32MX9	32M			TIN BISMUTH	BOTTOM		R-PBGA-B144		1.9 V	1.2 mm		11 mm		301989888 bit	1.7 V	TERM PITCH-MAX	e6			18.5 mm
IDT7MPV6271S15M	Renesas Electronics	CACHE TAG SRAM MODULE	COMMERCIAL	144	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	500 mA	32768 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	SRAMs	.8 mm	70 Cel	3-STATE	32KX64	32K	3.14 V	0 Cel	TIN LEAD	ZIG-ZAG	1	R-XZMA-N144		3.6 V				Not Qualified	2097152 bit	3.15 V	8K X 8 CACHE TAG	e0	YES	.012 Amp		7 ns
IDT70V7319S200DDG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	144	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		256KX18	256K		0 Cel	MATTE TIN	QUAD		S-PQFP-G144		3.45 V	1.6 mm		20 mm	Not Qualified	4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3			20 mm	10 ns
IDT70V7339S200DDG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	144	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		512KX18	512K		0 Cel	MATTE TIN	QUAD		S-PQFP-G144		3.45 V	1.6 mm		20 mm	Not Qualified	9437184 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3			20 mm	10 ns
70V27L15BFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	144	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		32768 words		3.3		16	GRID ARRAY				70 Cel		32KX16	32K		0 Cel		BOTTOM		S-PBGA-B144		3.6 V					524288 bit	3 V						15 ns
IDT70V27L55BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	144	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	180 mA	32768 words	COMMON	3.3	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,13X13,32	SRAMs	.8 mm	70 Cel	3-STATE	32KX16	32K	3 V	0 Cel	MATTE TIN	BOTTOM	2	S-PBGA-B144		3.6 V	1.5 mm		12 mm	Not Qualified	524288 bit	3 V		e3		.003 Amp	12 mm	55 ns
IDT70V7399S200DD	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	144	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		18	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		128KX18	128K		0 Cel	TIN LEAD	QUAD		S-PQFP-G144	4	3.45 V	1.6 mm		20 mm	Not Qualified	2359296 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0			20 mm	10 ns
IDT70P525L55BZGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	144	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		8192 words		1.8		16	GRID ARRAY				85 Cel		8KX16	8K		-40 Cel	MATTE TIN	BOTTOM		S-PBGA-B144		1.9 V				Not Qualified	131072 bit	1.7 V		e3				55 ns
IDT7MPV6271S12M	Renesas Electronics	CACHE TAG SRAM MODULE	COMMERCIAL	144	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	500 mA	32768 words	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	SRAMs	.8 mm	70 Cel	3-STATE	32KX64	32K	3.14 V	0 Cel	TIN LEAD	ZIG-ZAG	1	R-XZMA-N144		3.6 V				Not Qualified	2097152 bit	3.15 V	8K X 8 CACHE TAG	e0	YES	.012 Amp		7 ns
70V27L55BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	144	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	180 mA	32768 words	COMMON	3.3	3.3	16	GRID ARRAY	BGA144,13X13,32	SRAMs	.8 mm	70 Cel	3-STATE	32KX16	32K	3 V	0 Cel	MATTE TIN	BOTTOM	2	S-PBGA-B144		3.6 V				Not Qualified	524288 bit	3 V		e3		.003 Amp		55 ns
70V27S55BFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	144	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		32768 words		3.3		16	GRID ARRAY				70 Cel		32KX16	32K		0 Cel	MATTE TIN	BOTTOM		S-PBGA-B144		3.6 V					524288 bit	3 V		e3				55 ns
KMM965G115P-G7	Samsung	SRAM MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		1048576 words		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		1MX64	1M		0 Cel		DUAL		R-XDMA-N144		3.6 V				Not Qualified	67108864 bit	3 V						5.5 ns
KMM966G115Q-G8	Samsung	SRAM MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		1048576 words		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		1MX64	1M		0 Cel		DUAL		R-XDMA-N144		3.6 V				Not Qualified	67108864 bit	3 V						6 ns
KMM966G225Q-G8	Samsung	SRAM MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		2097152 words		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		2MX64	2M		0 Cel		DUAL		R-XDMA-N144		3.6 V				Not Qualified	134217728 bit	3 V						6 ns
KMM966G225Q-G7	Samsung	SRAM MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		2097152 words		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		2MX64	2M		0 Cel		DUAL		R-XDMA-N144		3.6 V				Not Qualified	134217728 bit	3 V						5.5 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.