20 SRAM 989

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IMS1423S-45S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	105 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K	4.5 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T20				Not Qualified	16384 bit			e0				40 ns
IMS1423Y-45M	STMicroelectronics	STANDARD SRAM	MILITARY	20	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	120 mA	4096 words	COMMON	5	5	4	FLATPACK	FL20,.3	SRAMs	1.27 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-XDFP-F20	5.5 V	1.356 mm		Not Qualified	16384 bit	4.5 V		e0	NO		12.192 mm	45 ns
IMS1400W-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	QCCN	RECTANGULAR	CERAMIC	YES		MOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	SEPARATE	5	5	1	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	70 Cel	3-STATE	16KX1	16K		0 Cel	TIN LEAD	QUAD		R-XQCC-N20				Not Qualified	16384 bit			e0				40 ns
IMS1403N-35M	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	75 mA	16384 words	SEPARATE	5	5	1	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	125 Cel	3-STATE	16KX1	16K	4.5 V	-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N20	5.5 V	1.981 mm	7.36 mm	Not Qualified	16384 bit	4.5 V		e0	NO		10.795 mm	35 ns
IMS1423P-35S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	105 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T20				Not Qualified	16384 bit			e0				35 ns
5962-8670513ZX	STMicroelectronics	STANDARD SRAM	MILITARY	20	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		4	FLATPACK			1.27 mm	125 Cel		4KX4	4K		-55 Cel		DUAL		R-CDFP-F20	5.5 V	1.356 mm		Not Qualified	16384 bit	4.5 V					12.192 mm	45 ns
IMS1423P-55	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	4.455 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0	NO		26.289 mm	50 ns
5962-8670513RX	STMicroelectronics	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		4	IN-LINE			2.54 mm	125 Cel		4KX4	4K		-55 Cel		DUAL		R-CDIP-T20	5.5 V	3.124 mm	7.62 mm	Not Qualified	16384 bit	4.5 V					25.4 mm	45 ns
IMS1403P-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	4.455 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0	NO		26.289 mm	40 ns
IMS1423S-35M	STMicroelectronics	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T20	5.5 V	3.124 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0	NO		25.4 mm	35 ns
5962-8670511ZX	STMicroelectronics	STANDARD SRAM	MILITARY	20	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		4	FLATPACK				125 Cel		4KX4	4K		-55 Cel		DUAL		R-CDFP-F20	5.5 V			Not Qualified	16384 bit	4.5 V						25 ns
8413208YA	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		1	CHIP CARRIER			1.27 mm	125 Cel	3-STATE	16KX1	16K		-55 Cel		QUAD	1	R-CQCC-N20	5.5 V	1.981 mm	7.36 mm	Not Qualified	16384 bit	4.5 V			NO		10.795 mm	50 ns
5962-8670513XA	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		4096 words		5		4	CHIP CARRIER			1.27 mm	125 Cel	3-STATE	4KX4	4K		-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N20	5.5 V	1.981 mm	7.36 mm	Not Qualified	16384 bit	4.5 V		e0	NO		10.795 mm	45 ns
MK41L66N35	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	16384 words	SEPARATE	3.3	3.3	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	2 V	0 Cel		DUAL		R-PDIP-T20				Not Qualified	16384 bit					.00005 Amp		35 ns
IMS1400P-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K		0 Cel	TIN LEAD	DUAL		R-PDIP-T20				Not Qualified	16384 bit			e0				40 ns
IMS1403P-35	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	4.455 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0	NO		26.289 mm	35 ns
IMS1420S-70M	STMicroelectronics	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K		-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T20	5.5 V	3.124 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0	NO		25.4 mm	70 ns
5962-8670512XX	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		4096 words		5		4	CHIP CARRIER			1.27 mm	125 Cel		4KX4	4K		-55 Cel		QUAD		R-CQCC-N20	5.5 V	1.981 mm	7.36 mm	Not Qualified	16384 bit	4.5 V					10.795 mm	35 ns
IMS1403S-55	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-CDIP-T20	5.5 V	3.124 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0	NO		25.4 mm	50 ns
8413208YX	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		1	CHIP CARRIER				125 Cel		16KX1	16K		-55 Cel		QUAD		S-XQCC-N20	5.5 V			Not Qualified	16384 bit	4.5 V						55 ns
IMS1423Y-35M	STMicroelectronics	STANDARD SRAM	MILITARY	20	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	130 mA	4096 words	COMMON	5	5	4	FLATPACK	FL20,.3	SRAMs	1.27 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-XDFP-F20	5.5 V	1.356 mm		Not Qualified	16384 bit	4.5 V		e0	NO		12.192 mm	35 ns
MK41H69P-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K		0 Cel	TIN LEAD	DUAL		R-XDIP-T20				Not Qualified	16384 bit			e0				25 ns
IMS1403S-70LM	STMicroelectronics	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K		-55 Cel	TIN LEAD	DUAL		R-XDIP-T20				Not Qualified	16384 bit			e0				65 ns
IMS1403W-35	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	75 mA	16384 words	SEPARATE	5	5	1	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	70 Cel	3-STATE	16KX1	16K	4.5 V	0 Cel	TIN LEAD	QUAD	1	R-CQCC-N20	5.5 V	1.981 mm	7.36 mm	Not Qualified	16384 bit	4.5 V		e0	NO		10.795 mm	35 ns
MK41H69P-35	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K		0 Cel	TIN LEAD	DUAL		R-XDIP-T20				Not Qualified	16384 bit			e0				35 ns
IMS1400S-55	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K		0 Cel	TIN LEAD	DUAL		R-XDIP-T20				Not Qualified	16384 bit			e0				50 ns
IMS1423S-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	105 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-CDIP-T20	5.5 V	3.124 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0	NO		25.4 mm	25 ns
IMS1423W-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	105 mA	4096 words	COMMON	5	5	4	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	70 Cel	3-STATE	4KX4	4K	4.5 V	0 Cel	TIN LEAD	QUAD	1	R-CQCC-N20	5.5 V	1.981 mm	7.36 mm	Not Qualified	16384 bit	4.5 V		e0	NO		10.795 mm	25 ns
5962-8670515XX	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		4096 words		5		4	CHIP CARRIER				125 Cel		4KX4	4K		-55 Cel		QUAD		S-CQCC-N20	5.5 V			Not Qualified	16384 bit	4.5 V						70 ns
IMS1423S-35S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	105 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K	4.5 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T20				Not Qualified	16384 bit			e0				35 ns
IMS1400W-55	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	QCCN	RECTANGULAR	CERAMIC	YES		MOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	SEPARATE	5	5	1	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	70 Cel	3-STATE	16KX1	16K		0 Cel	TIN LEAD	QUAD		R-XQCC-N20				Not Qualified	16384 bit			e0				50 ns
IMS1420N-55M	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	125 Cel	3-STATE	4KX4	4K		-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N20	5.5 V	1.981 mm	7.36 mm	Not Qualified	16384 bit	4.5 V		e0	NO		10.795 mm	55 ns
IMS1420P-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K		0 Cel	TIN LEAD	DUAL		R-PDIP-T20				Not Qualified	16384 bit			e0				40 ns
MK41H68P-20	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K		0 Cel	TIN LEAD	DUAL		R-XDIP-T20				Not Qualified	16384 bit			e0				20 ns
8413202RC	STMicroelectronics	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	16KX1	16K		-55 Cel		DUAL	1	R-CDIP-T20	5.5 V	3.124 mm	7.62 mm	Not Qualified	16384 bit	4.5 V			NO		25.4 mm	40 ns
T74LS170C1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		4 words		5		4	CHIP CARRIER			1.27 mm	70 Cel		4X4	4		0 Cel		QUAD		S-PQCC-J20	5.25 V	4.57 mm	8.9662 mm	Not Qualified	16 bit	4.75 V					8.9662 mm	40 ns
MK41H66N-35	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	5.334 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0	NO		26.289 mm	35 ns
IMS1400W-35	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	QCCN	RECTANGULAR	CERAMIC	YES		MOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	SEPARATE	5	5	1	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	70 Cel	3-STATE	16KX1	16K		0 Cel	TIN LEAD	QUAD		R-XQCC-N20				Not Qualified	16384 bit			e0				35 ns
MK41H68P-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K		0 Cel	TIN LEAD	DUAL		R-XDIP-T20				Not Qualified	16384 bit			e0				25 ns
MK41L66N45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	16384 words	SEPARATE	3.3	3.3	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	2 V	0 Cel		DUAL		R-PDIP-T20				Not Qualified	16384 bit					.00005 Amp		45 ns
8413202RA	STMicroelectronics	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		1	IN-LINE			2.54 mm	125 Cel		16KX1	16K		-55 Cel		DUAL		R-GDIP-T20	5.5 V	5.08 mm	7.62 mm		16384 bit	4.5 V	AUTOMATIC POWER-DOWN				24.13 mm	45 ns
MK41L66N25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	16384 words	SEPARATE	3.3	3.3	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	2 V	0 Cel		DUAL		R-PDIP-T20				Not Qualified	16384 bit					.00005 Amp		25 ns
8413205YX	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		1	CHIP CARRIER				125 Cel		16KX1	16K		-55 Cel		QUAD		S-XQCC-N20	5.5 V			Not Qualified	16384 bit	4.5 V						35 ns
IMS1423W-45S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	105 mA	4096 words	COMMON	5	5	4	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	70 Cel	3-STATE	4KX4	4K	4.5 V	0 Cel	TIN LEAD	QUAD		R-XQCC-N20				Not Qualified	16384 bit			e0				40 ns
IMS1403W-55	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	75 mA	16384 words	SEPARATE	5	5	1	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	70 Cel	3-STATE	16KX1	16K	4.5 V	0 Cel	TIN LEAD	QUAD	1	R-CQCC-N20	5.5 V	1.981 mm	7.36 mm	Not Qualified	16384 bit	4.5 V		e0	NO		10.795 mm	50 ns
MK41H68P-35	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K		0 Cel	TIN LEAD	DUAL		R-XDIP-T20				Not Qualified	16384 bit			e0				35 ns
IMS1423P-35	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	4.455 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0	NO		26.289 mm	35 ns
MK41L67N45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	16384 words	SEPARATE	3.3	3.3	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	2 V	0 Cel		DUAL		R-PDIP-T20				Not Qualified	16384 bit					.00005 Amp		45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.