20 SRAM 989

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IMS1423Y-55M	STMicroelectronics	STANDARD SRAM	MILITARY	20	DFP		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	COMMON	5	5	4	FLATPACK	FL20,.3	SRAMs	1.27 mm	125 Cel		3-STATE	4KX4	4K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-XDFP-F20	5.5 V	1.356 mm		Not Qualified	16384 bit	4.5 V	e0	NO		12.192 mm	55 ns
IMS1420S-55	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	4KX4	4K		0 Cel	TIN LEAD	DUAL		R-XDIP-T20				Not Qualified	16384 bit		e0				50 ns
MK41L67P35	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	16384 words	SEPARATE	3.3	3.3	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX1	16K	2 V	0 Cel		DUAL		R-XDIP-T20				Not Qualified	16384 bit				.00005 Amp		35 ns
MK41H66P-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX1	16K		0 Cel	TIN LEAD	DUAL		R-XDIP-T20				Not Qualified	16384 bit		e0				25 ns
IMS1403W-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	QCCN		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	75 mA	16384 words	SEPARATE	5	5	1	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	70 Cel		3-STATE	16KX1	16K	4.5 V	0 Cel	TIN LEAD	QUAD	1	R-CQCC-N20	5.5 V	1.981 mm	7.36 mm	Not Qualified	16384 bit	4.5 V	e0	NO		10.795 mm	40 ns
5962-8670501RX	STMicroelectronics	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		4	IN-LINE				125 Cel			4KX4	4K		-55 Cel		DUAL		R-GDIP-T20	5.5 V			Not Qualified	16384 bit	4.5 V					25 ns
M74HC670C1R	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	20	QCCN		SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		4 words		5	2/6	4	CHIP CARRIER	LDCC20,.4SQ	Other Memory ICs	1.27 mm	85 Cel		3-STATE	4X4	4		-40 Cel	MATTE TIN	QUAD	1	S-CQCC-N20	6 V	1.86 mm	8.89 mm	Not Qualified	16 bit	2 V	e3	NO		8.89 mm	46 ns
MK41H66P-35	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX1	16K		0 Cel	TIN LEAD	DUAL		R-XDIP-T20				Not Qualified	16384 bit		e0				35 ns
5962-8670514XX	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		4096 words		5		4	CHIP CARRIER			1.27 mm	125 Cel			4KX4	4K		-55 Cel		QUAD		R-CQCC-N20	5.5 V	1.981 mm	7.36 mm	Not Qualified	16384 bit	4.5 V				10.795 mm	55 ns
IMS1420P-55	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	4KX4	4K		0 Cel	TIN LEAD	DUAL		R-PDIP-T20				Not Qualified	16384 bit		e0				50 ns
5962-8670512ZA	STMicroelectronics	STANDARD SRAM	MILITARY	20	DFP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		4	FLATPACK			1.27 mm	125 Cel			4KX4	4K		-55 Cel	TIN LEAD	DUAL		R-CDFP-F20	5.5 V	1.356 mm		Not Qualified	16384 bit	4.5 V	e0			12.192 mm	35 ns
5962-8670512XA	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		4096 words		5		4	CHIP CARRIER			1.27 mm	125 Cel		3-STATE	4KX4	4K		-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N20	5.5 V	1.981 mm	7.36 mm	Not Qualified	16384 bit	4.5 V	e0	NO		10.795 mm	35 ns
IMS1423W-55	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	QCCN		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	4096 words	COMMON	5	5	4	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	70 Cel		3-STATE	4KX4	4K	4.5 V	0 Cel	TIN LEAD	QUAD	1	R-CQCC-N20	5.5 V	1.981 mm	7.36 mm	Not Qualified	16384 bit	4.5 V	e0	NO		10.795 mm	50 ns
MK41H66N-20	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16KX1	16K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	5.334 mm	7.62 mm	Not Qualified	16384 bit	4.5 V	e0	NO		26.289 mm	20 ns
5962-8670513RA	STMicroelectronics	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		4	IN-LINE			2.54 mm	125 Cel			4KX4	4K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T20	5.5 V	3.124 mm	7.62 mm	Not Qualified	16384 bit	4.5 V	e0			25.4 mm	45 ns
8413202YX	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN		SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		1	CHIP CARRIER				125 Cel			16KX1	16K		-55 Cel		QUAD		S-XQCC-N20	5.5 V			Not Qualified	16384 bit	4.5 V					45 ns
IMS1403LS-55M	STMicroelectronics	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel		3-STATE	16KX1	16K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T20	5.5 V	3.124 mm	7.62 mm	Not Qualified	16384 bit	4.5 V	e0	NO		25.4 mm	50 ns
IMS1423N-45M	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	4096 words	COMMON	5	5	4	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	125 Cel		3-STATE	4KX4	4K	4.5 V	-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N20	5.5 V	1.981 mm	7.36 mm	Not Qualified	16384 bit	4.5 V	e0	NO		10.795 mm	45 ns
5962-8670515XA	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN		SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		4096 words		5		4	CHIP CARRIER				125 Cel			4KX4	4K		-55 Cel	TIN LEAD	QUAD		S-CQCC-N20	5.5 V			Not Qualified	16384 bit	4.5 V	e0				70 ns
SAB81C54-T	Infineon Technologies	STANDARD SRAM	OTHER	20	SOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		512 words	COMMON		3/5	8	SMALL OUTLINE	SOP20,.4	SRAMs	1.27 mm	70 Cel		3-STATE	512X8	512		-25 Cel	Tin/Lead (Sn/Pb)	DUAL	1, (MUXED)	R-PDSO-G20				Not Qualified	4096 bit		e0		.000001 Amp		150 ns
SAE81C54G	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	20	SOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		512 words	COMMON		3/5	8	SMALL OUTLINE	SOP20,.4	SRAMs	1.27 mm	85 Cel		3-STATE	512X8	512		-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1, (MUXED)	R-PDSO-G20				Not Qualified	4096 bit		e0		.000001 Amp		350 ns
SAE81C52G	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	20	SOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	.5 mA	256 words		5	5	8	SMALL OUTLINE	SOP20,.4	SRAMs	1.27 mm	85 Cel		3-STATE	256X8	256	1 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20				Not Qualified	2048 bit		e0		.000001 Amp		200 ns
DS2430E	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	20	TSSOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			.5 mA	32 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	SRAMs	.635 mm	70 Cel			32X8	32		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20				Not Qualified			e0		.00000015 Amp		15000 ns
TC514258P-85	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			75 mA	262144 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20				Not Qualified	1048576 bit		e0		.001 Amp		85 ns
TC514402ATR-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			75 mA	1048576 words	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	SRAMs	.635 mm	70 Cel	YES	3-STATE	1MX4	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20				Not Qualified	4194304 bit		e0		.001 Amp		100 ns
TMM2068AD-35	Toshiba	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	16384 bit		e0				35 ns
TC514258J-85	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND			75 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20				Not Qualified	1048576 bit		e0		.001 Amp		85 ns
TC514402AFT-60	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			120 mA	1048576 words	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	SRAMs	.635 mm	70 Cel		3-STATE	1MX4	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20				Not Qualified	4194304 bit		e0		.001 Amp		60 ns
TC514402AFT-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			75 mA	1048576 words	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	SRAMs	.635 mm	70 Cel		3-STATE	1MX4	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20				Not Qualified	4194304 bit		e0		.001 Amp		100 ns
TMM2068AP-35	Toshiba	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20	5.5 V	5 mm	7.62 mm	Not Qualified	16384 bit	4.5 V	e0			24.6 mm	35 ns
TC511002J-85	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND			70 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20				Not Qualified	1048576 bit		e0		.001 Amp		85 ns
TC514402AFT-80	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			85 mA	1048576 words	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	SRAMs	.635 mm	70 Cel		3-STATE	1MX4	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20				Not Qualified	4194304 bit		e0		.001 Amp		80 ns
TC511002J-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND			50 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20				Not Qualified	1048576 bit		e0		.001 Amp		120 ns
TC5047AP-1	Toshiba	STANDARD SRAM	OTHER	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON			4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	85 Cel		3-STATE	1KX4	1K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20				Not Qualified	4096 bit		e0				550 ns
TMM2068D-55	Toshiba	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	16384 bit		e0				55 ns
TC514258J-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND			65 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20				Not Qualified	1048576 bit		e0		.001 Amp		100 ns
TC511002Z-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			50 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit		e0		.001 Amp		120 ns
TMM2068AD-25	Toshiba	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	16384 bit		e0				25 ns
TC514402ATR-60	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			120 mA	1048576 words	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	SRAMs	.635 mm	70 Cel	YES	3-STATE	1MX4	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20				Not Qualified	4194304 bit		e0		.001 Amp		60 ns
TMM2068AD-45	Toshiba	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	16384 bit		e0				45 ns
TC514402AFT-70	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			100 mA	1048576 words	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	SRAMs	.635 mm	70 Cel		3-STATE	1MX4	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20				Not Qualified	4194304 bit		e0		.001 Amp		70 ns
TMM2068D-35	Toshiba	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	16384 bit		e0				35 ns
TMM2068D-45	Toshiba	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	16384 bit		e0				45 ns
TMM2068AP-45	Toshiba	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20				Not Qualified	16384 bit		e0				45 ns
TC514402ATR-70	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			100 mA	1048576 words	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	SRAMs	.635 mm	70 Cel	YES	3-STATE	1MX4	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20				Not Qualified	4194304 bit		e0		.001 Amp		70 ns
TC511002J-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND			60 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20				Not Qualified	1048576 bit		e0		.001 Amp		100 ns
TC514402ATR-80	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			85 mA	1048576 words	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	SRAMs	.635 mm	70 Cel	YES	3-STATE	1MX4	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20				Not Qualified	4194304 bit		e0		.001 Amp		80 ns
TC511002Z-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			60 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit		e0		.001 Amp		100 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.