20 SRAM 989

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Nominal Negative Supply Voltage	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
TC514258P-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE			65 mA	262144 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T20					Not Qualified	1048576 bit		e0		.001 Amp		100 ns
TMM2068AP-25	Toshiba	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T20					Not Qualified	16384 bit		e0				25 ns
TC514258J-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS			J BEND			55 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20					Not Qualified	1048576 bit		e0		.001 Amp		120 ns
TC514258P-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE			55 mA	262144 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T20					Not Qualified	1048576 bit		e0		.001 Amp		120 ns
TC514258Z-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE			55 mA	262144 words	COMMON	5	5	4	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20					Not Qualified	1048576 bit		e0		.001 Amp		120 ns
TC514258Z-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE			65 mA	262144 words	COMMON	5	5	4	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20					Not Qualified	1048576 bit		e0		.001 Amp		100 ns
TC5047AP-2	Toshiba	STANDARD SRAM	OTHER	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON			4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1KX4	1K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T20					Not Qualified	4096 bit		e0				800 ns
TC511002Z-85	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE			70 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20					Not Qualified	1048576 bit		e0		.001 Amp		85 ns
UPB100480B-15	Renesas Electronics	STANDARD SRAM	OTHER	20	DFP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	ECL		-4.5 V	FLAT	PARALLEL	ASYNCHRONOUS	240 mA	16384 words	SEPARATE		-4.5	1	FLATPACK	FL20,.3	SRAMs	1.27 mm	85 Cel	OPEN-EMITTER	16KX1	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDFP-F20					Not Qualified	16384 bit		e0				15 ns
UPD2167D-3	Renesas Electronics	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	CERAMIC	NO		MOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	180 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T20					Not Qualified	16384 bit		e0				55 ns
HM6167	Renesas Electronics	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T20					Not Qualified	16384 bit		e0				70 ns
UPB100480D-10	Renesas Electronics	STANDARD SRAM	OTHER	20	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	ECL		-4.5 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	260 mA	16384 words	SEPARATE		-4.5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	85 Cel	OPEN-EMITTER	16KX1	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDIP-T20					Not Qualified	16384 bit		e0				10 ns
HM6168H-70	Renesas Electronics	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T20					Not Qualified	16384 bit		e0				70 ns
UPB10480B-10	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	20	DFP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	ECL		-5.2 V	FLAT	PARALLEL	ASYNCHRONOUS		16384 words	SEPARATE		-5.2	1	FLATPACK	FL20,.3	SRAMs	1.27 mm	75 Cel	OPEN-EMITTER	16KX1	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDFP-F20					Not Qualified	16384 bit		e0				10 ns
UPB10480B-15	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	20	DFP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	ECL		-5.2 V	FLAT	PARALLEL	ASYNCHRONOUS		16384 words	SEPARATE		-5.2	1	FLATPACK	FL20,.3	SRAMs	1.27 mm	75 Cel	OPEN-EMITTER	16KX1	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDFP-F20					Not Qualified	16384 bit		e0				15 ns
6167LA35DB	Renesas Electronics	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	2 V	-55 Cel	TIN LEAD	DUAL	R-CDIP-T20	1	5.5 V			Not Qualified	16384 bit	4.5 V	e0	240	.0002 Amp		35 ns
6167LA100DB	Renesas Electronics	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	2 V	-55 Cel	TIN LEAD	DUAL	R-CDIP-T20	1	5.5 V			Not Qualified	16384 bit	4.5 V	e0	240			100 ns
6167LA20P	Renesas Electronics	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	2 V	0 Cel	TIN LEAD	DUAL	R-PDIP-T20	1	5.5 V			Not Qualified	16384 bit	4.5 V	e0	245	.00002 Amp		20 ns
6167LA55DB	Renesas Electronics	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	2 V	-55 Cel	TIN LEAD	DUAL	R-CDIP-T20	1	5.5 V			Not Qualified	16384 bit	4.5 V	e0	240	.0002 Amp		55 ns
6167SA15P	Renesas Electronics	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	4.5 V	0 Cel	TIN LEAD	DUAL	R-PDIP-T20	1	5.5 V			Not Qualified	16384 bit	4.5 V	e0	245	.005 Amp		15 ns
6167SA35DB	Renesas Electronics	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	4.5 V	-55 Cel	TIN LEAD	DUAL	R-CDIP-T20	1	5.5 V			Not Qualified	16384 bit	4.5 V	e0	240	.01 Amp		35 ns
6167SA25DB	Renesas Electronics	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	4.5 V	-55 Cel	TIN LEAD	DUAL	R-CDIP-T20	1	5.5 V			Not Qualified	16384 bit	4.5 V	e0	240	.01 Amp		25 ns
6167LA45DB	Renesas Electronics	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	65 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	2 V	-55 Cel	TIN LEAD	DUAL	R-CDIP-T20	1	5.5 V			Not Qualified	16384 bit	4.5 V	e0	240	.0002 Amp		45 ns
6167SA45DB	Renesas Electronics	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	4.5 V	-55 Cel	TIN LEAD	DUAL	R-CDIP-T20	1	5.5 V			Not Qualified	16384 bit	4.5 V	e0	240	.01 Amp		45 ns
6167LA70DB	Renesas Electronics	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	2 V	-55 Cel	TIN LEAD	DUAL	R-CDIP-T20	1	5.5 V			Not Qualified	16384 bit	4.5 V	e0	240	.0002 Amp		70 ns
6167SA70DB	Renesas Electronics	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	4.5 V	-55 Cel	TIN LEAD	DUAL	R-CDIP-T20	1	5.5 V			Not Qualified	16384 bit	4.5 V	e0	240	.01 Amp		70 ns
6167SA100DB	Renesas Electronics	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K		-55 Cel	TIN LEAD	DUAL	R-CDIP-T20	1	5.5 V			Not Qualified	16384 bit	4.5 V	e0	240			100 ns
6167SA55DB	Renesas Electronics	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	4.5 V	-55 Cel	TIN LEAD	DUAL	R-CDIP-T20	1	5.5 V			Not Qualified	16384 bit	4.5 V	e0	240	.01 Amp		55 ns
6167SA85DB	Renesas Electronics	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K		-55 Cel	TIN LEAD	DUAL	R-CDIP-T20	1	5.5 V			Not Qualified	16384 bit	4.5 V	e0	240			85 ns
6167SA20P	Renesas Electronics	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	4.5 V	0 Cel	TIN LEAD	DUAL	R-PDIP-T20	1	5.5 V			Not Qualified	16384 bit	4.5 V	e0	245	.005 Amp		20 ns
6167LA25DB	Renesas Electronics	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	2 V	-55 Cel	TIN LEAD	DUAL	R-CDIP-T20	1	5.5 V			Not Qualified	16384 bit	4.5 V	e0	240	.0002 Amp		25 ns
6167LA85DB	Renesas Electronics	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	2 V	-55 Cel	TIN LEAD	DUAL	R-CDIP-T20	1	5.5 V			Not Qualified	16384 bit	4.5 V	e0	240			85 ns
6167SA25P	Renesas Electronics	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	4.5 V	0 Cel	TIN LEAD	DUAL	R-PDIP-T20	1	5.5 V			Not Qualified	16384 bit	4.5 V	e0	245	.005 Amp		25 ns
6167LA25P	Renesas Electronics	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	2 V	0 Cel	TIN LEAD	DUAL	R-PDIP-T20	1	5.5 V			Not Qualified	16384 bit	4.5 V	e0	245	.00002 Amp		25 ns
HM6168HLP-70	Renesas Electronics	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		4	IN-LINE			2.54 mm	70 Cel		4KX4	4K		0 Cel		DUAL	R-PDIP-T20		5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V				25.4 mm	70 ns
UPB10480D-10	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	20	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	ECL		-5.2 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words	SEPARATE		-5.2	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	75 Cel	OPEN-EMITTER	16KX1	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDIP-T20					Not Qualified	16384 bit		e0				10 ns
HM6167HCG-55	Renesas Electronics	STANDARD SRAM	COMMERCIAL	20	QCCN		RECTANGULAR	CERAMIC	YES		CMOS			NO LEAD	PARALLEL	ASYNCHRONOUS	80 mA	16384 words	SEPARATE	5	5	1	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	70 Cel	3-STATE	16KX1	16K		0 Cel	Tin/Lead (Sn/Pb)	QUAD	R-XQCC-N20					Not Qualified	16384 bit		e0				55 ns
UPB10480D-15	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	20	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	ECL		-5.2 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words	SEPARATE		-5.2	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	75 Cel	OPEN-EMITTER	16KX1	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDIP-T20					Not Qualified	16384 bit		e0				15 ns
HM6168H-55	Renesas Electronics	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T20					Not Qualified	16384 bit		e0				55 ns
6116S70CBX	Renesas Electronics	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE			2.54 mm	125 Cel		2KX8	2K		-55 Cel		DUAL	R-CDIP-T20		5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V				25.781 mm	150 ns
UPB100480B-10	Renesas Electronics	STANDARD SRAM	OTHER	20	DFP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	ECL		-4.5 V	FLAT	PARALLEL	ASYNCHRONOUS	260 mA	16384 words	SEPARATE		-4.5	1	FLATPACK	FL20,.3	SRAMs	1.27 mm	85 Cel	OPEN-EMITTER	16KX1	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDFP-F20					Not Qualified	16384 bit		e0				10 ns
HM6168HP-55	Renesas Electronics	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		4	IN-LINE			2.54 mm	70 Cel		4KX4	4K		0 Cel		DUAL	R-PDIP-T20		5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V				25.4 mm	55 ns
HM6167HLP-45	Renesas Electronics	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T20					Not Qualified	16384 bit		e0				45 ns
HM6168H-45	Renesas Electronics	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T20					Not Qualified	16384 bit		e0				45 ns
HM6167-6	Renesas Electronics	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T20					Not Qualified	16384 bit		e0				85 ns
HM6167LP	Renesas Electronics	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T20					Not Qualified	16384 bit		e0				70 ns
HM6167H-45	Renesas Electronics	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T20					Not Qualified	16384 bit		e0				45 ns
HM6167P	Renesas Electronics	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T20					Not Qualified	16384 bit		e0				70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.