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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
UPD4311C-45	Renesas Electronics	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20				Not Qualified	16384 bit			e0				45 ns
UPD421002V-60	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			90 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit			e0		.001 Amp		60 ns
UPD424258LA-70	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND			80 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20				Not Qualified	1048576 bit			e0		.001 Amp		70 ns
UPD424268LA-10	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND			60 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20				Not Qualified	1048576 bit			e0		.001 Amp		100 ns
HM6268LP-25	Renesas Electronics	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		4	IN-LINE			2.54 mm	70 Cel		4KX4	4K		0 Cel		DUAL		R-PDIP-T20	5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V	BATTERY BACKUP				24.5 mm	25 ns
UPD4311C-55	Renesas Electronics	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20				Not Qualified	16384 bit			e0				55 ns
UPD4314D-45	Renesas Electronics	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	16384 bit			e0				45 ns
UPD4311D-35	Renesas Electronics	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	16384 bit			e0				35 ns
UPD445LC	Renesas Electronics	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON			4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20				Not Qualified	4096 bit			e0				650 ns
UPD421002LA-80	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND			70 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20				Not Qualified	1048576 bit			e0		.001 Amp		80 ns
UPD424258C-80	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			70 mA	262144 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20				Not Qualified	1048576 bit			e0		.001 Amp		80 ns
UPD424258C-70	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	262144 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20				Not Qualified	1048576 bit			e0		.001 Amp		70 ns
KM44C1002J-12	Samsung	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND				1048576 words	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.4	SRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20				Not Qualified	4194304 bit			e0				120 ns
KM44C1002Z-12	Samsung	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE				1048576 words	COMMON	5	5	4	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	4194304 bit			e0				120 ns
MT5C1601-30LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	85 Cel	3-STATE	16KX1	16K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20				Not Qualified	16384 bit			e0				30 ns
MT5C1604EC-35LIT	Micron Technology	STANDARD SRAM	INDUSTRIAL	20	QCCN		RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	COMMON	5	5	4	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	85 Cel	3-STATE	4KX4	4K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N20				Not Qualified	16384 bit			e0				35 ns
MT5C1604C-20AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	20	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	16384 bit			e0				20 ns
MT4C1026Z15	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE				1048576 words	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit			e0				150 ns
MT5C1604EC-15LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	20	QCCN		RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	135 mA	4096 words	COMMON	5	5	4	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	125 Cel	3-STATE	4KX4	4K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N20				Not Qualified	16384 bit			e0				15 ns
MT5C1604C-12XT	Micron Technology	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	16384 bit			e0				12 ns
MT5C1604-8XT	Micron Technology	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20				Not Qualified	16384 bit			e0				8 ns
MT5C1604-30LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20				Not Qualified	16384 bit			e0				30 ns
MT5C1604-15XT	Micron Technology	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	175 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20				Not Qualified	16384 bit			e0				15 ns
MT5C1604-20LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	4.32 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0	NO		26.165 mm	20 ns
MT5C1601EC15L	Micron Technology	STANDARD SRAM	COMMERCIAL	20	QCCN		RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	125 mA	16384 words	SEPARATE	5	5	1	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	70 Cel	3-STATE	16KX1	16K	2 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N20				Not Qualified	16384 bit			e0				15 ns
MT5C1601EC-35IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	20	QCCN		RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	SEPARATE	5	5	1	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	85 Cel	3-STATE	16KX1	16K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N20				Not Qualified	16384 bit			e0				35 ns
MT5C1604-35IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	85 Cel	3-STATE	4KX4	4K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20				Not Qualified	16384 bit			e0				35 ns
MT5C1601C25L	Micron Technology	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	16384 bit			e0				25 ns
MT5C1604C-35LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	20	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	16384 bit			e0				35 ns
MT5C1604-35L	Micron Technology	STANDARD SRAM	COMMERCIAL	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX4	4K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T20	5.5 V	4.32 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0	NO		26.165 mm	35 ns
MT5C1601EC25L	Micron Technology	STANDARD SRAM	COMMERCIAL	20	QCCN		RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	1	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	70 Cel	3-STATE	16KX1	16K	2 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N20				Not Qualified	16384 bit			e0				25 ns
MT5C1601-35LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T20	5.5 V	4.32 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0	NO	.00025 Amp	26.165 mm	35 ns
MT5C1601-25IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	85 Cel	3-STATE	16KX1	16K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20				Not Qualified	16384 bit			e0		.005 Amp		25 ns
MT5C1604EC-20AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	20	QCCN		RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	4096 words	COMMON	5	5	4	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N20				Not Qualified	16384 bit			e0				20 ns
MT5C1601C-15LXT	Micron Technology	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	16384 bit			e0				15 ns
MT5C1601C-35L883C	Micron Technology	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	95 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	16384 bit			e0				35 ns
MT5C1601C-20L883C	Micron Technology	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	16384 bit			e0				20 ns
MT5C1601C-35XT	Micron Technology	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	16384 bit			e0				35 ns
MT5C1604C-15LXT	Micron Technology	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	16384 bit			e0				15 ns
MT5C1601EC-30LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	20	QCCN		RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	SEPARATE	5	5	1	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	125 Cel	3-STATE	16KX1	16K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N20				Not Qualified	16384 bit			e0				30 ns
MT5C1604-8LXT	Micron Technology	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	4.32 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0	NO		26.165 mm	8 ns
MT5C1604EC-25AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	20	QCCN		RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	COMMON	5	5	4	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N20				Not Qualified	16384 bit			e0				25 ns
MT5C1601-20LXT	Micron Technology	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	4.32 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0	NO	.0003 Amp	26.165 mm	20 ns
MT5C1604-20LXT	Micron Technology	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	4.32 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0	NO		26.165 mm	20 ns
MT5C1601EC-30883C	Micron Technology	STANDARD SRAM	MILITARY	20	QCCN		RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	1	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	125 Cel	3-STATE	16KX1	16K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N20				Not Qualified	16384 bit			e0				30 ns
MT5C1601-8LXT	Micron Technology	STANDARD SRAM	MILITARY	20	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-PDIP-T20	5.5 V	4.32 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0	NO	.00025 Amp	26.165 mm	8 ns
MT5C1604C-30LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	20	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	16384 bit			e0				30 ns
MT5C1601C-25LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	20	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	16384 bit			e0				25 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.