40 SRAM 171

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
BQ4025YMA-120	Texas Instruments	NON-VOLATILE SRAM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			200 mA	262144 words	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel		256KX16	256K	0 Cel		DUAL		R-PDIP-T40				Not Qualified	4194304 bit				NOT SPECIFIED	NOT SPECIFIED		.005 Amp		120 ns
TMS4000NC	Texas Instruments	CONTENT ADDRESSABLE SRAM	OTHER	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE				16 words			8	IN-LINE	DIP40,.6	SRAMs	2.54 mm	85 Cel		16X8	16	-25 Cel		DUAL		R-PDIP-T40				Not Qualified
TMS4000JC	Texas Instruments	CONTENT ADDRESSABLE SRAM	OTHER	40	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE				16 words			8	IN-LINE	DIP40,.6	SRAMs	2.54 mm	85 Cel		16X8	16	-25 Cel		DUAL		R-XDIP-T40				Not Qualified
BQ4025MA-120	Texas Instruments	NON-VOLATILE SRAM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			200 mA	262144 words	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel		256KX16	256K	0 Cel		DUAL		R-PDIP-T40				Not Qualified	4194304 bit				NOT SPECIFIED	NOT SPECIFIED		.005 Amp		120 ns
BQ4115YMA-150	Texas Instruments	NON-VOLATILE SRAM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			65 mA	524288 words	5	5	8	IN-LINE	DIP40,.6	SRAMs	2.54 mm	55 Cel		512KX8	512K	0 Cel		DUAL		R-PDIP-T40				Not Qualified	4194304 bit							.0002 Amp		150 ns
BQ4024YMA-85	Texas Instruments	NON-VOLATILE SRAM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			200 mA	131072 words	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel		128KX16	128K	0 Cel		DUAL		R-PDIP-T40				Not Qualified	2097152 bit				NOT SPECIFIED	NOT SPECIFIED		.005 Amp		85 ns
BQ4025MA-85	Texas Instruments	NON-VOLATILE SRAM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			200 mA	262144 words	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel		256KX16	256K	0 Cel		DUAL		R-PDIP-T40				Not Qualified	4194304 bit				NOT SPECIFIED	NOT SPECIFIED		.005 Amp		85 ns
TMS4003JR	Texas Instruments	STANDARD SRAM	OTHER	40	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words			1	IN-LINE	DIP40,.6	SRAMs	2.54 mm	85 Cel		256X1	256	-55 Cel		DUAL		R-XDIP-T40				Not Qualified
BQ4024MA-85	Texas Instruments	NON-VOLATILE SRAM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			200 mA	131072 words	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel		128KX16	128K	0 Cel		DUAL		R-PDIP-T40				Not Qualified	2097152 bit				NOT SPECIFIED	NOT SPECIFIED		.005 Amp		85 ns
BQ4024YMA-120	Texas Instruments	NON-VOLATILE SRAM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			200 mA	131072 words	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel		128KX16	128K	0 Cel		DUAL		R-PDIP-T40				Not Qualified	2097152 bit				NOT SPECIFIED	NOT SPECIFIED		.005 Amp		120 ns
BQ4025YMA-85	Texas Instruments	NON-VOLATILE SRAM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			200 mA	262144 words	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel		256KX16	256K	0 Cel		DUAL		R-PDIP-T40				Not Qualified	4194304 bit				NOT SPECIFIED	NOT SPECIFIED		.005 Amp		85 ns
BQ4024MA-120	Texas Instruments	NON-VOLATILE SRAM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			200 mA	131072 words	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel		128KX16	128K	0 Cel		DUAL		R-PDIP-T40				Not Qualified	2097152 bit				NOT SPECIFIED	NOT SPECIFIED		.005 Amp		120 ns
TMS4003NC	Texas Instruments	STANDARD SRAM	OTHER	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words			1	IN-LINE	DIP40,.6	SRAMs	2.54 mm	85 Cel		256X1	256	-55 Cel		DUAL		R-PDIP-T40				Not Qualified
DS1758Y-200-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			80 mA	131072 words	3	3	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	85 Cel		128KX16	128K	-40 Cel	TIN LEAD	DUAL		R-PDIP-T40				Not Qualified	2097152 bit			e0				.003 Amp		200 ns
DS1758Y-150-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			80 mA	131072 words	3	3	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	85 Cel		128KX16	128K	-40 Cel	TIN LEAD	DUAL		R-PDIP-T40				Not Qualified	2097152 bit			e0				.003 Amp		150 ns
DS1658AB-100	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			170 mA	131072 words	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel		128KX16	128K	0 Cel	TIN LEAD	DUAL		R-PDIP-T40				Not Qualified	2097152 bit			e0				.01 Amp		100 ns
DS1658AB-100-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			170 mA	131072 words	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	85 Cel		128KX16	128K	-40 Cel	TIN LEAD	DUAL		R-PDIP-T40				Not Qualified	2097152 bit			e0				.01 Amp		100 ns
DS1658Y-70	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			170 mA	131072 words	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel		128KX16	128K	0 Cel	TIN LEAD	DUAL		R-PDIP-T40				Not Qualified	2097152 bit			e0				.01 Amp		70 ns
DS1658AB-70-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			170 mA	131072 words	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	85 Cel		128KX16	128K	-40 Cel	TIN LEAD	DUAL		R-PDIP-T40				Not Qualified	2097152 bit			e0				.01 Amp		70 ns
DS1658Y-100-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			170 mA	131072 words	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	85 Cel		128KX16	128K	-40 Cel	TIN LEAD	DUAL		R-PDIP-T40				Not Qualified	2097152 bit			e0				.01 Amp		100 ns
DS1658Y-100	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			170 mA	131072 words	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel		128KX16	128K	0 Cel	TIN LEAD	DUAL		R-PDIP-T40				Not Qualified	2097152 bit			e0				.01 Amp		100 ns
DS1658Y-70-IND	Analog Devices	NON-VOLATILE SRAM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			170 mA	131072 words	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	85 Cel		128KX16	128K	-40 Cel	TIN LEAD	DUAL		R-PDIP-T40				Not Qualified	2097152 bit			e0				.01 Amp		70 ns
DS1658AB-70	Analog Devices	NON-VOLATILE SRAM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			170 mA	131072 words	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel		128KX16	128K	0 Cel	TIN LEAD	DUAL		R-PDIP-T40				Not Qualified	2097152 bit			e0				.01 Amp		70 ns
M46Z128-120PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	200 mA	131072 words	5	5	16	MICROELECTRONIC ASSEMBLY	DIP40,.6	SRAMs	2.54 mm	70 Cel	3-STATE	128KX16	128K	0 Cel	TIN LEAD	DUAL	1	R-XDMA-T40	5.5 V			Not Qualified	2097152 bit	4.75 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; 10 YEARS OF DATA RETENTION AT 25 DEG. CENT.	e0			YES	.005 Amp		120 ns
M46Z256Y-120PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	40		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words	5		16	MICROELECTRONIC ASSEMBLY				70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	1	R-XDMA-T40	5.5 V			Not Qualified	4194304 bit	4.5 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; 5 YEARS OF DATA RETENTION AT 25 DEG. CENT.				YES			120 ns
M46Z128Y-85PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	200 mA	131072 words	5	5	16	MICROELECTRONIC ASSEMBLY	DIP40,.6	SRAMs	2.54 mm	70 Cel	3-STATE	128KX16	128K	0 Cel	TIN LEAD	DUAL	1	R-XDMA-T40	5.5 V			Not Qualified	2097152 bit	4.5 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; 10 YEARS OF DATA RETENTION AT 25 DEG. CENT.	e0			YES	.005 Amp		85 ns
M46Z256-120PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	40		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words	5		16	MICROELECTRONIC ASSEMBLY				70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	1	R-XDMA-T40	5.5 V			Not Qualified	4194304 bit	4.75 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; 5 YEARS OF DATA RETENTION AT 25 DEG. CENT.				YES			120 ns
M46Z128Y-120PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	200 mA	131072 words	5	5	16	MICROELECTRONIC ASSEMBLY	DIP40,.6	SRAMs	2.54 mm	70 Cel	3-STATE	128KX16	128K	0 Cel	TIN LEAD	DUAL	1	R-XDMA-T40	5.5 V			Not Qualified	2097152 bit	4.5 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; 10 YEARS OF DATA RETENTION AT 25 DEG. CENT.	e0			YES	.005 Amp		120 ns
M46Z256Y-85PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	40		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words	5		16	MICROELECTRONIC ASSEMBLY				70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	1	R-XDMA-T40	5.5 V			Not Qualified	4194304 bit	4.5 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; 5 YEARS OF DATA RETENTION AT 25 DEG. CENT.				YES			85 ns
M46Z128-85PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	200 mA	131072 words	5	5	16	MICROELECTRONIC ASSEMBLY	DIP40,.6	SRAMs	2.54 mm	70 Cel	3-STATE	128KX16	128K	0 Cel	TIN LEAD	DUAL	1	R-XDMA-T40	5.5 V			Not Qualified	2097152 bit	4.75 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; 10 YEARS OF DATA RETENTION AT 25 DEG. CENT.	e0			YES	.005 Amp		85 ns
M46Z256-85PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	40		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words	5		16	MICROELECTRONIC ASSEMBLY				70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	1	R-XDMA-T40	5.5 V			Not Qualified	4194304 bit	4.75 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; 5 YEARS OF DATA RETENTION AT 25 DEG. CENT.				YES			85 ns
DS1758Y-200	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			80 mA	131072 words	3	3	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel		128KX16	128K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T40				Not Qualified	2097152 bit			e0				.003 Amp		200 ns
DS1758Y-150	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			80 mA	131072 words	3	3	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel		128KX16	128K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T40				Not Qualified	2097152 bit			e0				.003 Amp		150 ns
DS1258AB-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	40		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		131072 words	5		16	MICROELECTRONIC ASSEMBLY				70 Cel		128KX16	128K	0 Cel	TIN LEAD	DUAL		R-XDMA-P40	5.25 V			Not Qualified	2097152 bit	4.75 V	10 YEAR DATA RETENTION	e0						70 ns
DS1258W-100IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	40		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		131072 words	3.3		16	MICROELECTRONIC ASSEMBLY				85 Cel		128KX16	128K	-40 Cel	TIN LEAD	DUAL		R-XDMA-P40	3.6 V			Not Qualified	2097152 bit	3 V		e0						100 ns
DS1258W-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	100 mA	131072 words	3.3	3.3	16	MICROELECTRONIC ASSEMBLY	DIP40,.6	SRAMs	2.54 mm	70 Cel		128KX16	128K	0 Cel	MATTE TIN	DUAL		R-XDMA-P40	3.6 V			Not Qualified	2097152 bit	3 V		e3				.00025 Amp		100 ns
DS1258Y-70IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	40		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		131072 words	5		16	MICROELECTRONIC ASSEMBLY				85 Cel		128KX16	128K	-40 Cel	TIN LEAD	DUAL		R-XDMA-P40	5.5 V			Not Qualified	2097152 bit	4.5 V	10 YEAR DATA RETENTION	e0						70 ns
DS1258W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	40		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		131072 words	3.3		16	MICROELECTRONIC ASSEMBLY				70 Cel		128KX16	128K	0 Cel	TIN LEAD	DUAL		R-XDMA-P40	3.6 V			Not Qualified	2097152 bit	3 V		e0						100 ns
DS1258Y-70#	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	170 mA	131072 words	5	5	16	MICROELECTRONIC ASSEMBLY	DIP40,.6	SRAMs	2.54 mm	70 Cel		128KX16	128K	0 Cel	TIN LEAD	DUAL		R-XDMA-P40	5.5 V			Not Qualified	2097152 bit	4.5 V	10 YEAR DATA RETENTION	e0				.01 Amp		70 ns
DS1258W-150#	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	100 mA	131072 words	3.3	3.3	16	MICROELECTRONIC ASSEMBLY	DIP40,.6	SRAMs	2.54 mm	70 Cel		128KX16	128K	0 Cel	MATTE TIN	DUAL		R-XDMA-P40	3.6 V			Not Qualified	2097152 bit	3 V		e3				.00025 Amp		150 ns
DS1258Y	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	5		16	IN-LINE			2.54 mm	70 Cel		128KX16	128K	0 Cel	TIN LEAD	DUAL		R-PDIP-T40	5.5 V	9.27 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V	10 YEARS OF DATA RETENTION PERIOD	e0					53.085 mm	70 ns
DS1258AB-70IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	40		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		131072 words	5		16	MICROELECTRONIC ASSEMBLY				85 Cel		128KX16	128K	-40 Cel	TIN LEAD	DUAL		R-XDMA-P40	5.25 V			Not Qualified	2097152 bit	4.75 V	10 YEAR DATA RETENTION	e0						70 ns
DS1258Y-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	170 mA	131072 words	5	5	16	MICROELECTRONIC ASSEMBLY	DIP40,.6	SRAMs	2.54 mm	70 Cel		128KX16	128K	0 Cel	TIN LEAD	DUAL		R-XDMA-P40	5.5 V			Not Qualified	2097152 bit	4.5 V	10 YEAR DATA RETENTION	e0				.01 Amp		100 ns
DS1258W-150	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	40		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		131072 words	3.3		16	MICROELECTRONIC ASSEMBLY				70 Cel		128KX16	128K	0 Cel	TIN LEAD	DUAL		R-XDMA-P40	3.6 V			Not Qualified	2097152 bit	3 V		e0						150 ns
DS1258Y-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	40		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		131072 words	5		16	MICROELECTRONIC ASSEMBLY				70 Cel		128KX16	128K	0 Cel	TIN LEAD	DUAL		R-XDMA-P40	5.5 V			Not Qualified	2097152 bit	4.5 V	10 YEAR DATA RETENTION	e0						100 ns
DS1258AB-70#	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	170 mA	131072 words	5	5	16	MICROELECTRONIC ASSEMBLY	DIP40,.6	SRAMs	2.54 mm	70 Cel		128KX16	128K	0 Cel	TIN LEAD	DUAL		R-XDMA-P40	5.25 V			Not Qualified	2097152 bit	4.75 V	10 YEAR DATA RETENTION	e0				.01 Amp		70 ns
DS1258AB	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	5		16	IN-LINE			2.54 mm	70 Cel		128KX16	128K	0 Cel	TIN LEAD	DUAL		R-PDIP-T40	5.25 V	9.27 mm	15.24 mm	Not Qualified	2097152 bit	4.75 V	10 YEARS OF DATA RETENTION PERIOD	e0					53.085 mm	70 ns
DS1258AB-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	170 mA	131072 words	5	5	16	MICROELECTRONIC ASSEMBLY	DIP40,.6	SRAMs	2.54 mm	70 Cel		128KX16	128K	0 Cel	MATTE TIN	DUAL		R-XDMA-P40	5.25 V			Not Qualified	2097152 bit	4.75 V	10 YEAR DATA RETENTION	e3				.01 Amp		100 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.