40 SRAM 171

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
8M628S70C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	320 mA	8192 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	8KX16	8K	4.5 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T40				Not Qualified	131072 bit		e0		.03 Amp		70 ns
IDT8M656S70C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	360 mA	16384 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	16KX16	16K	4.5 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T40				Not Qualified	262144 bit		e0		.06 Amp		70 ns
8M656S40C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	360 mA	16384 words	COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	16KX16	16K	4.5 V	0 Cel	TIN LEAD	DUAL		R-CDMA-T40	5.5 V			Not Qualified	262144 bit	4.5 V	e0		.06 Amp		40 ns
IDT8M656S85C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	360 mA	16384 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	16KX16	16K	4.5 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T40				Not Qualified	262144 bit		e0		.06 Amp		85 ns
IDT8M656S50C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	330 mA	16384 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	16KX16	16K	4.5 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T40				Not Qualified	262144 bit		e0		.06 Amp		50 ns
IDT8M628S60C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	320 mA	8192 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	8KX16	8K	4.5 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T40				Not Qualified	131072 bit		e0		.03 Amp		60 ns
8M628S40C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	320 mA	8192 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	8KX16	8K	4.5 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T40				Not Qualified	131072 bit		e0		.03 Amp		40 ns
8M628S85CB	Renesas Electronics	SRAM MODULE	MILITARY	40	DIP	RECTANGULAR		CERAMIC	NO		CMOS	MIL-STD-883 Class B (Modified)	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	320 mA	8192 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	125 Cel	3-STATE	8KX16	8K	4.5 V	-55 Cel	TIN LEAD	DUAL		R-XDIP-T40				Not Qualified	131072 bit		e0		.04 Amp		85 ns
IDT8M656S40C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	360 mA	16384 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	16KX16	16K	4.5 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T40				Not Qualified	262144 bit		e0		.06 Amp		40 ns
8M656S50C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	330 mA	16384 words	COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	16KX16	16K	4.5 V	0 Cel	TIN LEAD	DUAL		R-CDMA-T40	5.5 V			Not Qualified	262144 bit	4.5 V	e0		.06 Amp		50 ns
IDT8M628S50C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	320 mA	8192 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	8KX16	8K	4.5 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T40				Not Qualified	131072 bit		e0		.03 Amp		50 ns
8M628S50C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	320 mA	8192 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	8KX16	8K	4.5 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T40				Not Qualified	131072 bit		e0		.03 Amp		50 ns
HS1-6564RH-8	Renesas Electronics	SRAM MODULE	MILITARY	40	DIP	RECTANGULAR	100k Rad(Si)	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	SYNCHRONOUS	56 mA	8192 words	SEPARATE	5	5	8	IN-LINE	DIP40,.9		SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	3 V	-55 Cel		DUAL		R-XDIP-T40				Not Qualified	65536 bit				.0012 Amp		400 ns
IDT8M628S70C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	320 mA	8192 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	8KX16	8K	4.5 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T40				Not Qualified	131072 bit		e0		.03 Amp		70 ns
8M628S85C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	320 mA	8192 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	8KX16	8K	4.5 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T40				Not Qualified	131072 bit		e0		.03 Amp		85 ns
IDT8M628S85CB	Renesas Electronics	SRAM MODULE	MILITARY	40	DIP	RECTANGULAR		CERAMIC	NO		CMOS	MIL-STD-883 Class B (Modified)	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	320 mA	8192 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	125 Cel	3-STATE	8KX16	8K	4.5 V	-55 Cel	TIN LEAD	DUAL		R-XDIP-T40				Not Qualified	131072 bit		e0		.04 Amp		85 ns
8M628S60C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	320 mA	8192 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	8KX16	8K	4.5 V	0 Cel	TIN LEAD	DUAL		R-XDIP-T40				Not Qualified	131072 bit		e0		.03 Amp		60 ns
KM6161000LT-45L	Samsung	STANDARD SRAM		40	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE, THIN PROFILE				.8 mm			64KX16	64K				DUAL		R-PDSO-G40		1.2 mm	10.16 mm	Not Qualified	1048576 bit					18.41 mm	45 ns
KM616513J-15	Samsung	STANDARD SRAM	COMMERCIAL	40	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	210 mA	32768 words	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44		SRAMs	1.27 mm	70 Cel	3-STATE	32KX16	32K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.76 mm	10.16 mm	Not Qualified	524288 bit	4.5 V	e0	YES	.001 Amp	26.04 mm	15 ns
KM616V513J-17	Samsung	STANDARD SRAM	COMMERCIAL	40	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	130 mA	32768 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44		SRAMs	1.27 mm	70 Cel	3-STATE	32KX16	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	3.6 V	3.76 mm	10.16 mm	Not Qualified	524288 bit	3 V	e0	YES	.0001 Amp	26.04 mm	17 ns
KM616513J-25	Samsung	STANDARD SRAM	COMMERCIAL	40	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	180 mA	32768 words	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44		SRAMs	1.27 mm	70 Cel	3-STATE	32KX16	32K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.76 mm	10.16 mm	Not Qualified	524288 bit	4.5 V	e0	YES	.001 Amp	26.04 mm	25 ns
KM616V4000ALT-45L	Samsung	STANDARD SRAM		40	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm			256KX16	256K				DUAL		R-PDSO-G40		1.2 mm	10.16 mm	Not Qualified	4194304 bit					18.41 mm	45 ns
KM616V513J-20	Samsung	STANDARD SRAM	COMMERCIAL	40	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44		SRAMs	1.27 mm	70 Cel	3-STATE	32KX16	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	3.6 V	3.76 mm	10.16 mm	Not Qualified	524288 bit	3 V	e0	YES	.0001 Amp	26.04 mm	20 ns
KM6164000AL-LT-7L-L	Samsung	STANDARD SRAM		40	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE				.8 mm			256KX16	256K				DUAL		R-PDSO-G40		1.2 mm	10.16 mm	Not Qualified	4194304 bit					18.41 mm	70 ns
KM6164000AL-LT-5L-L	Samsung	STANDARD SRAM		40	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE				.8 mm			256KX16	256K				DUAL		R-PDSO-G40		1.2 mm	10.16 mm	Not Qualified	4194304 bit					18.41 mm	55 ns
KM616V4000ALT-5L	Samsung	STANDARD SRAM		40	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm			256KX16	256K				DUAL		R-PDSO-G40		1.2 mm	10.16 mm	Not Qualified	4194304 bit					18.41 mm	55 ns
KM6164000ALT-45L	Samsung	STANDARD SRAM		40	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE				.8 mm			256KX16	256K				DUAL		R-PDSO-G40		1.2 mm	10.16 mm	Not Qualified	4194304 bit					18.41 mm	45 ns
KM6161000L-LT-5L-L	Samsung	STANDARD SRAM		40	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE, THIN PROFILE				.8 mm			64KX16	64K				DUAL		R-PDSO-G40		1.2 mm	10.16 mm	Not Qualified	1048576 bit					18.41 mm	55 ns
KM616V4000AL-LT-45L-L	Samsung	STANDARD SRAM		40	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm			8KX16	8K				DUAL		R-PDSO-G40		1.2 mm	10.16 mm	Not Qualified	131072 bit					18.41 mm	45 ns
KM616V4000AL-LT-7L-L	Samsung	STANDARD SRAM		40	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm			256KX16	256K				DUAL		R-PDSO-G40		1.2 mm	10.16 mm	Not Qualified	4194304 bit					18.41 mm	70 ns
KM616V1000LT-45L	Samsung	STANDARD SRAM		40	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm			64KX16	64K				DUAL		R-PDSO-G40		1.2 mm	10.16 mm	Not Qualified	1048576 bit					18.41 mm	45 ns
KM616V513J-25	Samsung	STANDARD SRAM	COMMERCIAL	40	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	110 mA	32768 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44		SRAMs	1.27 mm	70 Cel	3-STATE	32KX16	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	3.6 V	3.76 mm	10.16 mm	Not Qualified	524288 bit	3 V	e0	YES	.0001 Amp	26.04 mm	25 ns
KM616513J-17	Samsung	STANDARD SRAM	COMMERCIAL	40	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	200 mA	32768 words	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44		SRAMs	1.27 mm	70 Cel	3-STATE	32KX16	32K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.76 mm	10.16 mm	Not Qualified	524288 bit	4.5 V	e0	YES	.001 Amp	26.04 mm	17 ns
KM616V1000L-LT-7L-L	Samsung	STANDARD SRAM		40	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm			64KX16	64K				DUAL		R-PDSO-G40		1.2 mm	10.16 mm	Not Qualified	1048576 bit					18.41 mm	70 ns
KM616V4000AL-LT-5L-L	Samsung	STANDARD SRAM		40	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm			256KX16	256K				DUAL		R-PDSO-G40		1.2 mm	10.16 mm	Not Qualified	4194304 bit					18.41 mm	55 ns
KM6161000LT-7L	Samsung	STANDARD SRAM		40	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE, THIN PROFILE				.8 mm			64KX16	64K				DUAL		R-PDSO-G40		1.2 mm	10.16 mm	Not Qualified	1048576 bit					18.41 mm	70 ns
KM616V1000L-LT-45L-L	Samsung	STANDARD SRAM		40	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm			64KX16	64K				DUAL		R-PDSO-G40		1.2 mm	10.16 mm	Not Qualified	1048576 bit					18.41 mm	45 ns
KM6164000AL-LT-45L-L	Samsung	STANDARD SRAM		40	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE				.8 mm			256KX16	256K				DUAL		R-PDSO-G40		1.2 mm	10.16 mm	Not Qualified	4194304 bit					18.41 mm	45 ns
KM6161000LT-5L	Samsung	STANDARD SRAM		40	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE, THIN PROFILE				.8 mm			64KX16	64K				DUAL		R-PDSO-G40		1.2 mm	10.16 mm	Not Qualified	1048576 bit					18.41 mm	55 ns
KM616513J-20	Samsung	STANDARD SRAM	COMMERCIAL	40	SOJ	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	190 mA	32768 words	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44		SRAMs	1.27 mm	70 Cel	3-STATE	32KX16	32K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.76 mm	10.16 mm	Not Qualified	524288 bit	4.5 V	e0	YES	.001 Amp	26.04 mm	20 ns
KM6161000L-LT-45L-L	Samsung	STANDARD SRAM		40	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE, THIN PROFILE				.8 mm			64KX16	64K				DUAL		R-PDSO-G40		1.2 mm	10.16 mm	Not Qualified	1048576 bit					18.41 mm	45 ns
KM616V1000L-LT-5L-L	Samsung	STANDARD SRAM		40	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm			64KX16	64K				DUAL		R-PDSO-G40		1.2 mm	10.16 mm	Not Qualified	1048576 bit					18.41 mm	55 ns
KM616V1000LT-5L	Samsung	STANDARD SRAM		40	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm			64KX16	64K				DUAL		R-PDSO-G40		1.2 mm	10.16 mm	Not Qualified	1048576 bit					18.41 mm	55 ns
KM6161000L-LT-7L-L	Samsung	STANDARD SRAM		40	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE, THIN PROFILE				.8 mm			64KX16	64K				DUAL		R-PDSO-G40		1.2 mm	10.16 mm	Not Qualified	1048576 bit					18.41 mm	70 ns
KM616V1000LT-7L	Samsung	STANDARD SRAM		40	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm			64KX16	64K				DUAL		R-PDSO-G40		1.2 mm	10.16 mm	Not Qualified	1048576 bit					18.41 mm	70 ns
MT4S6416D-25	Micron Technology	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR		UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	290 mA	65536 words	COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-XDMA-T40	5.5 V			Not Qualified	1048576 bit	4.5 V	e0	YES	.04 Amp		25 ns
MT4S6416D-45	Micron Technology	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR		UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	250 mA	131072 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	DIP40,.6	16	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-XDMA-T40	5.5 V			Not Qualified	1048576 bit	4.5 V	e0	YES	.02 Amp		45 ns
MT5C6416C-35	Micron Technology	CACHE SRAM	COMMERCIAL	40	DIP	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	4KX16	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T40				Not Qualified	65536 bit		e0				35 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.