40 SRAM 171

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Output Enable	Maximum Standby Current	Maximum Access Time
MT4S6416D-20	Micron Technology	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	310 mA	65536 words	COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	TIN LEAD	DUAL	1	R-XDMA-T40	5.5 V	Not Qualified	1048576 bit	4.5 V	e0	YES	.04 Amp	20 ns
MT85C1664-30L	Micron Technology	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	290 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	2 V	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T40	5.5 V	Not Qualified	1048576 bit	4.5 V	e0		.004 Amp	30 ns
MT2S3216D-45L	Micron Technology	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	200 mA	65536 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	DIP40,.6	16	SRAMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	2 V	Tin/Lead (Sn/Pb)	DUAL	1	R-XDMA-T40	5.5 V	Not Qualified	524288 bit	4.5 V	e0	YES	.001 Amp	45 ns
MT85C1632-30	Micron Technology	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	290 mA	32768 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	32KX16	32K	4.5 V	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T40		Not Qualified	524288 bit		e0		.02 Amp	30 ns
MT2S3216D-30	Micron Technology	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	210 mA	32768 words	COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	32KX16	32K	4.5 V	TIN LEAD	DUAL	1	R-XDMA-T40	5.5 V	Not Qualified	524288 bit	4.5 V	e0	YES	.035 Amp	30 ns
MT85C1664-45L	Micron Technology	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	290 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	2 V	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T40	5.5 V	Not Qualified	1048576 bit	4.5 V	e0		.004 Amp	45 ns
MT5C6416C-45	Micron Technology	CACHE SRAM	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	4KX16	4K		Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T40		Not Qualified	65536 bit		e0			45 ns
MT85C1632-45L	Micron Technology	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	290 mA	32768 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	32KX16	32K	2 V	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T40		Not Qualified	524288 bit		e0		.004 Amp	45 ns
MT85C1664-45	Micron Technology	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	290 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T40	5.5 V	Not Qualified	1048576 bit	4.5 V	e0		.02 Amp	45 ns
MT2S3216D-25	Micron Technology	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	260 mA	32768 words	COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	32KX16	32K	4.5 V	TIN LEAD	DUAL	1	R-XDMA-T40	5.5 V	Not Qualified	524288 bit	4.5 V	e0	YES	.035 Amp	25 ns
MT85C1632-35L	Micron Technology	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	290 mA	32768 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	32KX16	32K	2 V	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T40		Not Qualified	524288 bit		e0		.004 Amp	35 ns
MT4S6416D-45L	Micron Technology	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	250 mA	131072 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	DIP40,.6	16	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	2 V	Tin/Lead (Sn/Pb)	DUAL	1	R-XDMA-T40	5.5 V	Not Qualified	1048576 bit	4.5 V	e0	YES	.002 Amp	45 ns
MT85C1664-35L	Micron Technology	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	290 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	2 V	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T40	5.5 V	Not Qualified	1048576 bit	4.5 V	e0		.004 Amp	35 ns
MT2S3216D-20	Micron Technology	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	280 mA	32768 words	COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	32KX16	32K	4.5 V	TIN LEAD	DUAL	1	R-XDMA-T40	5.5 V	Not Qualified	524288 bit	4.5 V	e0	YES	.035 Amp	20 ns
MT5C6416-25	Micron Technology	CACHE SRAM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	4KX16	4K		Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T40		Not Qualified	65536 bit		e0			25 ns
MT4S6416D-30	Micron Technology	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	250 mA	65536 words	COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	TIN LEAD	DUAL	1	R-XDMA-T40	5.5 V	Not Qualified	1048576 bit	4.5 V	e0	YES	.04 Amp	30 ns
MT5C6416-35	Micron Technology	CACHE SRAM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	4KX16	4K		Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T40		Not Qualified	65536 bit		e0			35 ns
MT85C1632-30L	Micron Technology	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	290 mA	32768 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	32KX16	32K	2 V	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T40		Not Qualified	524288 bit		e0		.004 Amp	30 ns
MT85C1632-35	Micron Technology	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	290 mA	32768 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	32KX16	32K	4.5 V	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T40		Not Qualified	524288 bit		e0		.02 Amp	35 ns
MT85C1664-30	Micron Technology	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	290 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T40	5.5 V	Not Qualified	1048576 bit	4.5 V	e0		.02 Amp	30 ns
MT4S6416D-35	Micron Technology	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	210 mA	131072 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	DIP40,.6	16	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	Tin/Lead (Sn/Pb)	DUAL	1	R-XDMA-T40	5.5 V	Not Qualified	1048576 bit	4.5 V	e0	YES	.04 Amp	35 ns
MT5C6416-45	Micron Technology	CACHE SRAM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	4KX16	4K		Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T40		Not Qualified	65536 bit		e0			45 ns
MT2S3216D-45	Micron Technology	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	200 mA	65536 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	DIP40,.6	16	SRAMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	4.5 V	Tin/Lead (Sn/Pb)	DUAL	1	R-XDMA-T40	5.5 V	Not Qualified	524288 bit	4.5 V	e0	YES	.015 Amp	45 ns
MT85C1664-35	Micron Technology	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	290 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T40	5.5 V	Not Qualified	1048576 bit	4.5 V	e0		.02 Amp	35 ns
MT4S6416D-25	Micron Technology	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	290 mA	65536 words	COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	TIN LEAD	DUAL	1	R-XDMA-T40	5.5 V	Not Qualified	1048576 bit	4.5 V	e0	YES	.04 Amp	25 ns
MT4S6416D-45	Micron Technology	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	250 mA	131072 words	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	DIP40,.6	16	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	Tin/Lead (Sn/Pb)	DUAL	1	R-XDMA-T40	5.5 V	Not Qualified	1048576 bit	4.5 V	e0	YES	.02 Amp	45 ns
MT5C6416C-35	Micron Technology	CACHE SRAM	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	16	IN-LINE	DIP40,.6		SRAMs	2.54 mm	70 Cel	3-STATE	4KX16	4K		Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T40		Not Qualified	65536 bit		e0			35 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.