40 SRAM 171

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
DS1258W	Maxim Integrated	NON-VOLATILE SRAM MODULE		40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		3.3		16	IN-LINE			2.54 mm				128KX16	128K			TIN LEAD	DUAL	R-PDIP-T40		9.27 mm	15.24 mm	Not Qualified	2097152 bit		10 YEAR DATA RETENTION PERIOD	e0				53.085 mm	150 ns
DS1258W-150-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	40		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		3.3		16	MICROELECTRONIC ASSEMBLY				85 Cel			128KX16	128K		-40 Cel	TIN LEAD	DUAL	R-XDMA-T40	3.6 V			Not Qualified	2097152 bit	3 V		e0					150 ns
DS1258W-100IND#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	100 mA	131072 words		3.3	3.3	16	MICROELECTRONIC ASSEMBLY	DIP40,.6	SRAMs	2.54 mm	85 Cel			128KX16	128K		-40 Cel	MATTE TIN	DUAL	R-XDMA-P40	3.6 V			Not Qualified	2097152 bit	3 V		e3			.00025 Amp		100 ns
DS1258AB-70IND#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	170 mA	131072 words		5	5	16	MICROELECTRONIC ASSEMBLY	DIP40,.6	SRAMs	2.54 mm	85 Cel			128KX16	128K		-40 Cel	TIN LEAD	DUAL	R-XDMA-P40	5.25 V			Not Qualified	2097152 bit	4.75 V	10 YEAR DATA RETENTION	e0			.01 Amp		70 ns
DS1258AB-100-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	170 mA	131072 words		5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	85 Cel			128KX16	128K		-40 Cel	TIN LEAD	DUAL	R-XDMA-T40	5.25 V	9.27 mm	15.24 mm	Not Qualified	2097152 bit	4.75 V		e0			.01 Amp	53.085 mm	100 ns
DS1258Y-100-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	170 mA	131072 words		5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	85 Cel			128KX16	128K		-40 Cel	TIN LEAD	DUAL	R-XDMA-T40	5.5 V	9.27 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V		e0			.01 Amp	53.085 mm	100 ns
DS1258AB-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	40		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		131072 words		5		16	MICROELECTRONIC ASSEMBLY				70 Cel			128KX16	128K		0 Cel	TIN LEAD	DUAL	R-XDMA-P40	5.25 V			Not Qualified	2097152 bit	4.75 V	10 YEAR DATA RETENTION	e0					100 ns
DS1258Y-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	40		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		131072 words		5		16	MICROELECTRONIC ASSEMBLY				70 Cel			128KX16	128K		0 Cel	TIN LEAD	DUAL	R-XDMA-P40	5.5 V			Not Qualified	2097152 bit	4.5 V	10 YEAR DATA RETENTION	e0					70 ns
DS1258Y-70IND#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	170 mA	131072 words		5	5	16	MICROELECTRONIC ASSEMBLY	DIP40,.6	SRAMs	2.54 mm	85 Cel			128KX16	128K		-40 Cel		DUAL	R-XDMA-P40	5.5 V			Not Qualified	2097152 bit	4.5 V	10 YEAR DATA RETENTION		NOT SPECIFIED	NOT SPECIFIED	.01 Amp		70 ns
TC55V040TR-70	Toshiba	STANDARD SRAM	INDUSTRIAL	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	SRAMs	.5 mm	85 Cel	YES	3-STATE	512KX8	512K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40	3.6 V	1.2 mm	10 mm	Not Qualified	4194304 bit	2.7 V		e0			.000005 Amp	12.4 mm	70 ns
TC55V040FT-70	Toshiba	STANDARD SRAM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	512KX8	512K	1.5 V	-40 Cel		DUAL	R-PDSO-G40	3.6 V	1.2 mm	10 mm	Not Qualified	4194304 bit	2.7 V					.000005 Amp	12.4 mm	70 ns
TC55V020TR-10	Toshiba	STANDARD SRAM	INDUSTRIAL	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	SRAMs	.5 mm	85 Cel	YES	3-STATE	256KX8	256K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40	3.6 V	1.2 mm	10 mm	Not Qualified	2097152 bit	2.7 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0			.000005 Amp	12.4 mm	100 ns
TC55VCM208ASGN55	Toshiba	STANDARD SRAM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	524288 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	512KX8	512K	1.5 V	-40 Cel		DUAL	R-PDSO-G40	3.6 V	1.2 mm	10 mm	Not Qualified	4194304 bit	2.3 V						12.4 mm	70 ns
TC55V040ATR-55	Toshiba	STANDARD SRAM	INDUSTRIAL	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	SRAMs	.5 mm	85 Cel	YES	3-STATE	512KX8	512K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40	3.6 V	1.2 mm	10 mm	Not Qualified	4194304 bit	2.3 V		e0				12.4 mm	55 ns
TC55VCM208ASGN40	Toshiba	STANDARD SRAM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	524288 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	512KX8	512K	1.5 V	-40 Cel		DUAL	R-PDSO-G40	3.6 V	1.2 mm	10 mm	Not Qualified	4194304 bit	2.3 V						12.4 mm	55 ns
TC55BS8128J-10	Toshiba	STANDARD SRAM	COMMERCIAL	40	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel			128KX8	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J40	5.5 V	3.7 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0				26.04 mm	5 ns
TC551632J-20	Toshiba	CACHE SRAM	COMMERCIAL	40	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	220 mA	32768 words	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	SRAMs	1.27 mm	70 Cel		3-STATE	32KX16	32K	4.5 V	0 Cel	TIN LEAD	DUAL	R-PDSO-J40	5.5 V	3.7 mm	10.16 mm	Not Qualified	524288 bit	4.5 V		e0			.001 Amp	26.04 mm	20 ns
TC55V020FT-70	Toshiba	STANDARD SRAM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	256KX8	256K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40	3.6 V	1.2 mm	10 mm	Not Qualified	2097152 bit	2.7 V		e0			.000005 Amp	12.4 mm	70 ns
TC55V040AFT-70	Toshiba	STANDARD SRAM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	512KX8	512K	1.5 V	-40 Cel		DUAL	R-PDSO-G40	3.6 V	1.2 mm	10 mm	Not Qualified	4194304 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED		12.4 mm	70 ns
THMS161620Z-25	Toshiba	CACHE SRAM MODULE	COMMERCIAL	40		UNSPECIFIED	UNSPECIFIED		1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS		16384 words		5		16	MICROELECTRONIC ASSEMBLY				70 Cel			16KX16	16K		0 Cel	TIN LEAD	UNSPECIFIED	X-XXMA-X40	5.5 V			Not Qualified	262144 bit	4.5 V	LOW POWER STANDBY MODE	e0					25 ns
TC55V020FT-85	Toshiba	STANDARD SRAM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	256KX8	256K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40	3.6 V	1.2 mm	10 mm	Not Qualified	2097152 bit	2.7 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0			.000005 Amp	12.4 mm	85 ns
TC511632FTL-85	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel			32KX16	32K		0 Cel	TIN LEAD	DUAL	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	524288 bit	4.5 V		e0				18.41 mm	85 ns
TC55VCM208ASTN55	Toshiba	STANDARD SRAM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	524288 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	512KX8	512K	1.5 V	-40 Cel		DUAL	R-PDSO-G40	3.6 V	1.2 mm	10 mm	Not Qualified	4194304 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED		12.4 mm	55 ns
TC55BS8128J-12	Toshiba	STANDARD SRAM	COMMERCIAL	40	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel			128KX8	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J40	5.5 V	3.7 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0				26.04 mm	6 ns
TC55V040FT-85	Toshiba	STANDARD SRAM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	512KX8	512K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40	3.6 V	1.2 mm	10 mm	Not Qualified	4194304 bit	2.7 V		e0			.000005 Amp	12.4 mm	85 ns
THMS121620Z-25	Toshiba	CACHE SRAM MODULE	COMMERCIAL	40		UNSPECIFIED	UNSPECIFIED		1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS		16384 words		5		12	MICROELECTRONIC ASSEMBLY				70 Cel			16KX12	16K		0 Cel	TIN LEAD	UNSPECIFIED	X-XXMA-X40	5.5 V			Not Qualified	196608 bit	4.5 V		e0					25 ns
TC511632FL-85	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	40	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		16	SMALL OUTLINE			1.27 mm	70 Cel			32KX16	32K		0 Cel	TIN LEAD	DUAL	R-PDSO-G40	5.5 V	2.8 mm	10.7 mm	Not Qualified	524288 bit	4.5 V		e0				25.7 mm	85 ns
TC55V040AFT-55	Toshiba	STANDARD SRAM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	512KX8	512K	1.5 V	-40 Cel		DUAL	R-PDSO-G40	3.6 V	1.2 mm	10 mm	Not Qualified	4194304 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED		12.4 mm	55 ns
TC551632J-25	Toshiba	CACHE SRAM	COMMERCIAL	40	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	32768 words	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	SRAMs	1.27 mm	70 Cel		3-STATE	32KX16	32K	4.5 V	0 Cel	TIN LEAD	DUAL	R-PDSO-J40	5.5 V	3.7 mm	10.16 mm	Not Qualified	524288 bit	4.5 V		e0			.001 Amp	26.04 mm	25 ns
TC55V020TR-85	Toshiba	STANDARD SRAM	INDUSTRIAL	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	SRAMs	.5 mm	85 Cel	YES	3-STATE	256KX8	256K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40	3.6 V	1.2 mm	10 mm	Not Qualified	2097152 bit	2.7 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0			.000005 Amp	12.4 mm	85 ns
TC511632FL-70	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	40	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		16	SMALL OUTLINE			1.27 mm	70 Cel			32KX16	32K		0 Cel	TIN LEAD	DUAL	R-PDSO-G40	5.5 V	2.8 mm	10.7 mm	Not Qualified	524288 bit	4.5 V		e0				25.7 mm	70 ns
TC551632J-35	Toshiba	CACHE SRAM	COMMERCIAL	40	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	32768 words	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	SRAMs	1.27 mm	70 Cel		3-STATE	32KX16	32K	4.5 V	0 Cel	TIN LEAD	DUAL	R-PDSO-J40	5.5 V	3.7 mm	10.16 mm	Not Qualified	524288 bit	4.5 V		e0			.001 Amp	26.04 mm	35 ns
TC511632FTL-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel			32KX16	32K		0 Cel	TIN LEAD	DUAL	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	524288 bit	4.5 V		e0				18.41 mm	100 ns
TC511632FTL-70	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel			32KX16	32K		0 Cel	TIN LEAD	DUAL	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	524288 bit	4.5 V		e0				18.41 mm	70 ns
TC511632FL-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	40	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		16	SMALL OUTLINE			1.27 mm	70 Cel			32KX16	32K		0 Cel	TIN LEAD	DUAL	R-PDSO-G40	5.5 V	2.8 mm	10.7 mm	Not Qualified	524288 bit	4.5 V		e0				25.7 mm	100 ns
TC55V040FT-10	Toshiba	STANDARD SRAM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	512KX8	512K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40	3.6 V	1.2 mm	10 mm	Not Qualified	4194304 bit	2.7 V		e0			.000005 Amp	12.4 mm	100 ns
TC55V040TR-10	Toshiba	STANDARD SRAM	INDUSTRIAL	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	SRAMs	.5 mm	85 Cel	YES	3-STATE	512KX8	512K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40	3.6 V	1.2 mm	10 mm	Not Qualified	4194304 bit	2.7 V		e0			.000005 Amp	12.4 mm	100 ns
TC55V020FT-10	Toshiba	STANDARD SRAM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	256KX8	256K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40	3.6 V	1.2 mm	10 mm	Not Qualified	2097152 bit	2.7 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0			.000005 Amp	12.4 mm	100 ns
TC55V040TR-85	Toshiba	STANDARD SRAM	INDUSTRIAL	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	SRAMs	.5 mm	85 Cel	YES	3-STATE	512KX8	512K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40	3.6 V	1.2 mm	10 mm	Not Qualified	4194304 bit	2.7 V		e0			.000005 Amp	12.4 mm	85 ns
THMS121620Z-35	Toshiba	CACHE SRAM MODULE	COMMERCIAL	40		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS		16384 words		5		12	MICROELECTRONIC ASSEMBLY				70 Cel			16KX12	16K		0 Cel	TIN LEAD	UNSPECIFIED	X-XXMA-X40	5.5 V			Not Qualified	196608 bit	4.5 V		e0					35 ns
TC55VCM208ASTN40	Toshiba	STANDARD SRAM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	524288 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	512KX8	512K	1.5 V	-40 Cel		DUAL	R-PDSO-G40	3.6 V	1.2 mm	10 mm	Not Qualified	4194304 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED		12.4 mm	40 ns
TC55V040ATR-70	Toshiba	STANDARD SRAM	INDUSTRIAL	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	SRAMs	.5 mm	85 Cel	YES	3-STATE	512KX8	512K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40	3.6 V	1.2 mm	10 mm	Not Qualified	4194304 bit	2.3 V		e0				12.4 mm	70 ns
THMS161620Z-35	Toshiba	CACHE SRAM MODULE	COMMERCIAL	40		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS		16384 words		5		16	MICROELECTRONIC ASSEMBLY				70 Cel			16KX16	16K		0 Cel	TIN LEAD	UNSPECIFIED	X-XXMA-X40	5.5 V			Not Qualified	262144 bit	4.5 V	LOW POWER STANDBY MODE	e0					35 ns
TC55V020TR-70	Toshiba	STANDARD SRAM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	SRAMs	.5 mm	85 Cel	YES	3-STATE	256KX8	256K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40	3.6 V	1.2 mm	10 mm	Not Qualified	2097152 bit	2.7 V		e0			.000005 Amp	12.4 mm	70 ns
8M656S85C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	360 mA	16384 words	COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	DIP40,.6	SRAMs	2.54 mm	70 Cel		3-STATE	16KX16	16K	4.5 V	0 Cel	TIN LEAD	DUAL	R-CDMA-T40	5.5 V			Not Qualified	262144 bit	4.5 V		e0			.06 Amp		85 ns
IDT8M628S40C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	320 mA	8192 words	COMMON	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX16	8K	4.5 V	0 Cel	TIN LEAD	DUAL	R-XDIP-T40				Not Qualified	131072 bit			e0			.03 Amp		40 ns
8M656S70C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	360 mA	16384 words	COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	DIP40,.6	SRAMs	2.54 mm	70 Cel		3-STATE	16KX16	16K	4.5 V	0 Cel	TIN LEAD	DUAL	R-CDMA-T40	5.5 V			Not Qualified	262144 bit	4.5 V		e0			.06 Amp		70 ns
IDT8M628S85C	Renesas Electronics	SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	320 mA	8192 words	COMMON	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX16	8K	4.5 V	0 Cel	TIN LEAD	DUAL	R-XDIP-T40				Not Qualified	131072 bit			e0			.03 Amp		85 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.