48 SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

CY14B101NA-BA20XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

65536 words

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.75 mm

85 Cel

64KX16

64K

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

R-PBGA-B48

3

2.7 V

1.2 mm

6 mm

Not Qualified

1048576 bit

3.6 V

e1

30

260

10 mm

20 ns

CY14B256KA-SP45XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

SSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

52 mA

32768 words

COMMON

3

8

SMALL OUTLINE, SHRINK PITCH

SSOP48,.4

.635 mm

85 Cel

3-STATE

32KX8

32K

2.7 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

1

R-PDSO-G48

3

3.6 V

2.794 mm

7.5057 mm

262144 bit

2.7 V

e4

30

260

YES

.005 Amp

15.875 mm

45 ns

STK14EC16-BF45ITR

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

52 mA

262144 words

3/3.3

16

GRID ARRAY, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

256KX16

256K

-40 Cel

BOTTOM

R-PBGA-B48

Not Qualified

4194304 bit

.003 Amp

45 ns

CY62146GN30-45BVXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

262144 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

256KX16

256K

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

1 mm

6 mm

4194304 bit

2.2 V

NOT SPECIFIED

NOT SPECIFIED

8 mm

45 ns

CY62147GE-45BVXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

20 mA

262144 words

COMMON

5

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

256KX16

256K

1 V

-40 Cel

BOTTOM

1

R-PBGA-B48

5.5 V

1 mm

6 mm

4194304 bit

4.5 V

YES

.000013 Amp

8 mm

45 ns

CY62168GE30-45BVXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2097152 words

3

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

2MX8

2M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

16777216 bit

2.2 V

e1

260

8 mm

45 ns

CY62177G30-55BAXI

Infineon Technologies

STANDARD SRAM

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

45 mA

2097152 words

COMMON

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

2MX16

2M

2.2 V

-40 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B48

3

3.6 V

1.2 mm

8 mm

33554432 bit

2.2 V

e1

YES

.000019 Amp

9.5 mm

55 ns

CY62177EV18LL-70BAXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

ASYNCHRONOUS

45 mA

2097152 words

COMMON

1.8

1.8

16

GRID ARRAY, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

2MX16

2M

1 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

Not Qualified

33554432 bit

e1

260

.000017 Amp

70 ns

CY62147G30-45BVXAT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

262144 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

256KX16

256K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

4194304 bit

2.2 V

e1

260

8 mm

45 ns

CY62137EV30LL-45BVXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

20 mA

131072 words

COMMON

3

2.5/3.3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

128KX16

128K

1 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

Not Qualified

2097152 bit

2.2 V

e1

20

260

.000003 Amp

8 mm

45 ns

CY7C1061GE30-10BVJXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

16777216 bit

2.2 V

e1

260

8 mm

10 ns

CY7C1061GN30-10BVXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3.6 V

1 mm

6 mm

16777216 bit

2.2 V

e1

30

260

8 mm

10 ns

CY14B108L-BA45XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

57 mA

1048576 words

3

3/3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

1MX8

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

6 mm

Not Qualified

8388608 bit

2.7 V

e1

20

260

.01 Amp

10 mm

45 ns

CY14B108N-BA45XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

57 mA

524288 words

3

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

512KX16

512K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

6 mm

Not Qualified

8388608 bit

2.7 V

e1

20

260

.01 Amp

10 mm

45 ns

CY62177G30-55ZXIT

Infineon Technologies

STANDARD SRAM

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

45 mA

2097152 words

COMMON

3

16

SMALL OUTLINE, THIN PROFILE

TSOP48,.79,20

.5 mm

85 Cel

3-STATE

2MX16

2M

2.2 V

-40 Cel

PURE TIN

DUAL

1

R-PDSO-G48

3

3.6 V

1.2 mm

12 mm

33554432 bit

2.2 V

YES

.000019 Amp

18.4 mm

55 ns

CY62147G18-55BVXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

20 mA

262144 words

COMMON

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

256KX16

256K

1 V

-40 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B48

3

2.2 V

1 mm

6 mm

4194304 bit

1.65 V

e1

260

YES

.000013 Amp

8 mm

55 ns

CY7C1061GN30-10ZXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

1MX16

1M

-40 Cel

PURE TIN

DUAL

R-PDSO-G48

3

3.6 V

1.2 mm

12 mm

16777216 bit

2.2 V

30

260

18.4 mm

10 ns

CY14B101KA-SP25XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

SSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

70 mA

65536 words

3

3/3.3

16

SMALL OUTLINE, SHRINK PITCH

SSOP48,.4

8

SRAMs

.635 mm

85 Cel

64KX16

64K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G48

3

3.6 V

2.794 mm

7.5057 mm

Not Qualified

1048576 bit

2.7 V

e4

20

260

.005 Amp

15.875 mm

25 ns

CY7C1061G-10BVXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

5

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

5.5 V

1 mm

6 mm

16777216 bit

4.5 V

e1

260

8 mm

10 ns

CY62137FV30LL-45BVXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

18 mA

131072 words

COMMON

3

2.5/3.3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

128KX16

128K

1.5 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

Not Qualified

2097152 bit

2.2 V

e1

20

260

.000004 Amp

8 mm

45 ns

CY7C1079DV33-12B2XI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

250 mA

4194304 words

COMMON

3.3

3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

4MX8

4M

2 V

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

8 mm

Not Qualified

33554432 bit

3 V

.05 Amp

9.5 mm

12 ns

CY62147GN18-55BVXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

262144 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

256KX16

256K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

2.2 V

1 mm

6 mm

4194304 bit

1.65 V

e1

260

8 mm

55 ns

CY7C1061GE-10ZXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

5

16

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

1MX16

1M

-40 Cel

PURE TIN

DUAL

R-PDSO-G48

3

5.5 V

1.2 mm

12 mm

16777216 bit

4.5 V

260

18.4 mm

10 ns

CY14B101MA-SP25XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

SSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

70 mA

65536 words

3/3.3

16

SMALL OUTLINE, SHRINK PITCH

SSOP48,.4

SRAMs

.635 mm

85 Cel

64KX16

64K

-40 Cel

DUAL

R-PDSO-G48

Not Qualified

1048576 bit

.005 Amp

25 ns

CY62167GN-45ZXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

36 mA

1048576 words

COMMON

5

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

.5 mm

85 Cel

3-STATE

1MX16

1M

1 V

-40 Cel

DUAL

1

R-PDSO-G48

5.5 V

1.2 mm

12 mm

16777216 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

YES

.000016 Amp

18.4 mm

45 ns

CY7C1061GN30-10BVJXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

16777216 bit

2.2 V

e1

30

260

8 mm

10 ns

CY7C1061GN30-10BVJXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

16777216 bit

2.2 V

e1

30

260

8 mm

10 ns

CY14B104NA-BA45XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

52 mA

262144 words

3

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

256KX16

256K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

6 mm

Not Qualified

4194304 bit

2.7 V

e1

20

260

.005 Amp

10 mm

45 ns

CY14B104LA-BA25XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

70 mA

524288 words

3

3/3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

512KX8

512K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

6 mm

Not Qualified

4194304 bit

2.7 V

e1

20

260

.005 Amp

10 mm

25 ns

CY14B108L-BA25XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

75 mA

1048576 words

3

3/3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

1MX8

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

6 mm

Not Qualified

8388608 bit

2.7 V

e1

20

260

.01 Amp

10 mm

25 ns

CY7C130A-30PI

Infineon Technologies

MULTI-PORT SRAM

INDUSTRIAL

48

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

170 mA

1024 words

COMMON

5

5

8

IN-LINE

DIP48,.6

SRAMs

2.54 mm

85 Cel

3-STATE

1KX8

1K

4.5 V

-40 Cel

DUAL

2

R-PDIP-T48

Not Qualified

8192 bit

.015 Amp

30 ns

CY14B116L-Z30XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

2MX8

2M

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

16777216 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

18.4 mm

30 ns

CY62147G30-45BVXA

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

262144 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

256KX16

256K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

4194304 bit

2.2 V

e1

260

8 mm

45 ns

CY62147G30-45B2XI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

20 mA

262144 words

COMMON

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

256KX16

256K

1 V

-40 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B48

3

3.6 V

1 mm

6 mm

4194304 bit

2.2 V

e1

260

YES

.000013 Amp

8 mm

45 ns

CY14E116N-Z45XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

5

16

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

1MX16

1M

-40 Cel

DUAL

R-PDSO-G48

5.5 V

1.2 mm

12 mm

16777216 bit

4.5 V

18.4 mm

45 ns

CY14B101KA-SP45XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

SSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

52 mA

65536 words

3

3/3.3

16

SMALL OUTLINE, SHRINK PITCH

SSOP48,.4

8

SRAMs

.635 mm

85 Cel

64KX16

64K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G48

3

3.6 V

2.794 mm

7.5057 mm

Not Qualified

1048576 bit

2.7 V

e4

20

260

.005 Amp

15.875 mm

45 ns

CY14B116L-Z30XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

2MX8

2M

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

16777216 bit

2.7 V

18.4 mm

30 ns

CY14B101LA-SP45XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

SSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

52 mA

131072 words

3

3/3.3

8

SMALL OUTLINE, SHRINK PITCH

SSOP48,.4

SRAMs

.635 mm

85 Cel

128KX8

128K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G48

3

3.6 V

2.794 mm

7.5 mm

Not Qualified

1048576 bit

2.7 V

e4

20

260

.005 Amp

15.875 mm

45 ns

CY62168GN30-45BVXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

35 mA

2097152 words

COMMON

3

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

2MX8

2M

2.2 V

-40 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B48

3

3.6 V

1 mm

6 mm

16777216 bit

2.2 V

e1

YES

.000008 Amp

8 mm

45 ns

CY7C1061G18-15ZXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

1.8

16

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

1MX16

1M

-40 Cel

PURE TIN

DUAL

R-PDSO-G48

3

2.2 V

1.2 mm

12 mm

16777216 bit

1.65 V

260

18.4 mm

15 ns

CY62168GN30-45BVXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

35 mA

2097152 words

COMMON

3

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

2MX8

2M

2.2 V

-40 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B48

3

3.6 V

1 mm

6 mm

16777216 bit

2.2 V

e1

YES

.000008 Amp

8 mm

45 ns

CY62167G-55BVXE

Infineon Technologies

STANDARD SRAM

AUTOMOTIVE

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

5

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

125 Cel

1MX16

1M

-40 Cel

BOTTOM

R-PBGA-B48

5.5 V

1 mm

6 mm

16777216 bit

4.5 V

8 mm

55 ns

CY62167G-45BVXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

5

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

5.5 V

1 mm

6 mm

16777216 bit

4.5 V

e1

260

8 mm

45 ns

CY7C1061GE-10BVJXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

5

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

5.5 V

1 mm

6 mm

16777216 bit

4.5 V

e1

260

8 mm

10 ns

CY7C1051DV33-10BAXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

110 mA

524288 words

COMMON

3.3

3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

512KX16

512K

2 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

6 mm

Not Qualified

8388608 bit

3 V

e1

20

260

.02 Amp

8 mm

10 ns

CY7C1061G18-15BVXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

2.2 V

1 mm

6 mm

16777216 bit

1.65 V

e1

260

8 mm

15 ns

CY62146EV30LL-45BVXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

20 mA

262144 words

COMMON

3

2.5/3.3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

256KX16

256K

1.5 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

Not Qualified

4194304 bit

2.2 V

e1

20

260

.000007 Amp

8 mm

45 ns

CY62167G30-45ZXAT

Infineon Technologies

STANDARD SRAM

AUTOMOTIVE

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

COMMON

3

16

SMALL OUTLINE, THIN PROFILE

TSOP48,47,20

.5 mm

125 Cel

3-STATE

1MX16

1M

1 V

-40 Cel

DUAL

1

R-PDSO-G48

3.6 V

1.2 mm

12 mm

16777216 bit

2.2 V

YES

18.4 mm

45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.