48 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
TC55YEM416AXGN70	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	2	1.8/2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	1 V	-40 Cel		BOTTOM		R-PBGA-B48		2.2 V	1.2 mm	8 mm	Not Qualified	16777216 bit	1.65 V							11 mm	85 ns
TC55YEM316BXGN70	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	12 mA	524288 words	COMMON	1.8	1.8/2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1 V	-40 Cel		BOTTOM		R-PBGA-B48		2.2 V	1.2 mm	6 mm	Not Qualified	8388608 bit	1.65 V							7 mm	85 ns
TC51W3217XB-80	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		2097152 words		2.75		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		2MX16	2M		-25 Cel		BOTTOM		R-PBGA-B48		3.3 V	1.2 mm	6 mm	Not Qualified	33554432 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED			9 mm	80 ns
TC55VEM316AXGN40	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	524288 words	COMMON	3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm	8 mm	Not Qualified	8388608 bit	2.3 V		e1	NOT SPECIFIED	250			11 mm	55 ns
TC55V400FT-70	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.55,20		SRAMs	.5 mm	85 Cel	3-STATE	256KX16	256K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	4194304 bit	2.7 V		e0				.000005 Amp	12.4 mm	70 ns
TC55VBM316ATGN40	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	85 Cel		512KX16	512K		-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	8388608 bit	2.3 V			NOT SPECIFIED	260			18.4 mm	55 ns
TC55VEM316AXGN55	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	524288 words	COMMON	3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm	8 mm	Not Qualified	8388608 bit	2.3 V		e1	NOT SPECIFIED	250			11 mm	70 ns
TC55VBM316ASTN55	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	524288 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.55,20	8	SRAMs	.5 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	8388608 bit	2.3 V							12.4 mm	70 ns
TC55VCM216ASTN40	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	262144 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.55,20		SRAMs	.5 mm	85 Cel	3-STATE	256KX16	256K	1.5 V	-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	4194304 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			12.4 mm	55 ns
TC55V040XB-70	Toshiba	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		524288 words		3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel		512KX8	512K		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1 mm	9 mm	Not Qualified	4194304 bit	2.7 V							12 mm	70 ns
TC55W1600XB7	Toshiba	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	COMMON	3	2.5/3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32		SRAMs	.8 mm	85 Cel	3-STATE	1MX16	1M	1.5 V	-40 Cel		BOTTOM		R-PBGA-B48		3.1 V	1.4 mm	10 mm	Not Qualified	16777216 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			12 mm	85 ns
TC55VCM316BSGN55	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.55,20		SRAMs	.5 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	8388608 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			12.4 mm	70 ns
TC55VBM316ASTN40	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	524288 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.55,20	8	SRAMs	.5 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	8388608 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			12.4 mm	55 ns
7140SA55PB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	TIN LEAD	DUAL	2	R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e0				.03 Amp	61.849 mm	55 ns
7140SA25PDGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	280 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	MATTE TIN	DUAL	2	R-PDIP-T48					Not Qualified	8192 bit			e3				.03 Amp		25 ns
7140SA55FI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QFF	SQUARE	CERAMIC	YES		CMOS		FLAT	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	85 Cel	3-STATE	1KX8	1K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-XQFP-F48					Not Qualified	8192 bit			e0				.03 Amp		55 ns
7142SA35CGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	230 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	MATTE TIN	DUAL	2	R-PDIP-T48		5.5 V	4.826 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3				.03 Amp	60.96 mm	35 ns
7140SA25PDGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	280 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	MATTE TIN	DUAL	2	R-PDIP-T48	1	5.5 V			Not Qualified	8192 bit	4.5 V		e3				.03 Amp		25 ns
7140LA55PG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		8	IN-LINE				2.54 mm	70 Cel		1KX8	1K		0 Cel	MATTE TIN	DUAL		R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e3					61.849 mm	55 ns
7142LA55L48G8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		8	CHIP CARRIER				1.27 mm	70 Cel		2KX8	2K		0 Cel	MATTE TIN	QUAD		S-XQCC-N48		5.5 V		14.3002 mm		16384 bit	4.5 V		e3					14.3002 mm	55 ns
7140LA100L48I8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QCCN	SQUARE	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1 mm	85 Cel	3-STATE	1KX8	1K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-XQCC-N48					Not Qualified	8192 bit			e0				.004 Amp		100 ns
7140LA100PGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		8	IN-LINE				2.54 mm	85 Cel		1KX8	1K		-40 Cel	MATTE TIN	DUAL		R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e3					61.849 mm	100 ns
7142SA55PDGB8	Renesas Electronics	MULTI-PORT SRAM		48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	190 mA	2048 words	COMMON	5		8	IN-LINE	DIP48,.6			2.54 mm	125 Cel		2KX8	2K	2 V	-55 Cel		DUAL	2	R-PDIP-T48		5.5 V	3.8 mm	15.24 mm		16384 bit	4.5 V					YES	.1 Amp	61.7 mm	55 ns
7140SA25L48G	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-XQCC-N48		5.5 V		14.3002 mm	Not Qualified	8192 bit	4.5 V		e3				.015 Amp	14.3002 mm	25 ns
7140LA100LG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	110 mA	1024 words		5		8	CHIP CARRIER				1.27 mm	70 Cel		1KX8	1K		0 Cel		QUAD		S-XQCC-N48		5.5 V		14.3002 mm		8192 bit	4.5 V							14.3002 mm	100 ns
7142LA25L48GI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	300 mA	2048 words		5		8	CHIP CARRIER				1.27 mm	85 Cel		2KX8	2K		-40 Cel	MATTE TIN	QUAD		S-XQCC-N48		5.5 V		14.3002 mm		16384 bit	4.5 V		e3					14.3002 mm	25 ns
7142LA55CG8	Renesas Electronics	MULTI-PORT SRAM		48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	2048 words	COMMON	5		8	IN-LINE	DIP48,.6			2.54 mm	70 Cel		2KX8	2K	2 V	0 Cel		DUAL	2	R-CDIP-T48		5.5 V	3.3 mm	15.24 mm		16384 bit	4.5 V					YES	.07 Amp	61.72 mm	55 ns
7142LA35L48GB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class Q	NO LEAD	PARALLEL	ASYNCHRONOUS	170 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	MATTE TIN	QUAD	2	S-XQCC-N48		5.5 V		14.3002 mm	Not Qualified	16384 bit	4.5 V		e3				.004 Amp	14.3002 mm	35 ns
7140LA25L48GI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1 mm	85 Cel	3-STATE	1KX8	1K	2 V	-40 Cel	MATTE TIN	QUAD	2	S-XQCC-N48		5.5 V		14.3002 mm	Not Qualified	8192 bit	4.5 V		e3				.004 Amp	14.3002 mm	25 ns
7142SA55CGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	190 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	MATTE TIN	DUAL	2	R-PDIP-T48		5.5 V	4.826 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3				.03 Amp	60.96 mm	55 ns
7140LA100L48I	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QCCN	SQUARE	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1 mm	85 Cel	3-STATE	1KX8	1K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-XQCC-N48					Not Qualified	8192 bit			e0				.004 Amp		100 ns
7140LA100LG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	110 mA	1024 words		5		8	CHIP CARRIER				1.27 mm	70 Cel		1KX8	1K		0 Cel		QUAD		S-XQCC-N48		5.5 V		14.3002 mm		8192 bit	4.5 V							14.3002 mm	100 ns
7140SA55FGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	QFL48,.75SQ		SRAMs	1.27 mm	85 Cel	3-STATE	1KX8	1K	4.5 V	-40 Cel	MATTE TIN	QUAD	2	S-CQCC-N48	1	5.5 V		14.3002 mm	Not Qualified	8192 bit	4.5 V		e3				.03 Amp	14.3002 mm	55 ns
7142LA100CGB8	Renesas Electronics	MULTI-PORT SRAM		48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	2048 words	COMMON	5		8	IN-LINE	DIP48,.6			2.54 mm	125 Cel		2KX8	2K	2 V	-55 Cel		DUAL	2	R-CDIP-T48		5.5 V	3.3 mm	15.24 mm		16384 bit	4.5 V					YES	.08 Amp	61.72 mm	100 ns
7140LA35L48B	Renesas Electronics	DUAL-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS	170 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1.016 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	2	S-CQCC-N48	1	5.5 V	3.048 mm	14.3002 mm	Not Qualified	8192 bit	4.5 V		e0	NOT SPECIFIED	240		.004 Amp	14.3002 mm	35 ns
7142LA35PB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	170 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	DUAL	2	R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	16384 bit	4.5 V		e0				.004 Amp	61.849 mm	35 ns
7142LA55CG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	MATTE TIN	DUAL	2	R-PDIP-T48		5.5 V	4.826 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3				.0015 Amp	60.96 mm	55 ns
7142SA35L48	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	165 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-CQCC-N48		5.5 V		14.3002 mm	Not Qualified	16384 bit	4.5 V		e0				.015 Amp	14.3002 mm	35 ns
7140LA100L48GB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	MATTE TIN	QUAD	2	S-XQCC-N48		5.5 V		14.3002 mm	Not Qualified	8192 bit	4.5 V		e3				.004 Amp	14.3002 mm	100 ns
7142LA100C	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	2	R-CDIP-T48	1	5.5 V	4.826 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN; BATTERY BACKUP	e0	NOT SPECIFIED	240		.0015 Amp	60.96 mm	100 ns
7140SA100PGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		8	IN-LINE				2.54 mm	125 Cel		1KX8	1K		-55 Cel	MATTE TIN	DUAL		R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e3					61.849 mm	100 ns
7140SA55FGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class Q	NO LEAD	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	QFL48,.75SQ		SRAMs	1.27 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	MATTE TIN	QUAD	2	S-CQCC-N48		5.5 V		14.3002 mm	Not Qualified	8192 bit	4.5 V		e3				.03 Amp	14.3002 mm	55 ns
7142SA55L48	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	155 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-CQCC-N48		5.5 V		14.3002 mm	Not Qualified	16384 bit	4.5 V		e0				.015 Amp	14.3002 mm	55 ns
7140SA55FB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F48					Not Qualified	8192 bit			e0				.03 Amp		55 ns
7142SA25FG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	220 mA	2048 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-CQFP-F48		5.5 V			Not Qualified	16384 bit	4.5 V		e3				.015 Amp		25 ns
7140LA25LGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	220 mA	1024 words		5		8	CHIP CARRIER				1.27 mm	85 Cel		1KX8	1K		-40 Cel		QUAD		S-XQCC-N48		5.5 V		14.3002 mm		8192 bit	4.5 V							14.3002 mm	25 ns
7140SA55LGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class Q	NO LEAD	PARALLEL	ASYNCHRONOUS	190 mA	1024 words		5		8	CHIP CARRIER				1.27 mm	125 Cel		1KX8	1K		-55 Cel		QUAD		S-XQCC-N48		5.5 V		14.3002 mm		8192 bit	4.5 V							14.3002 mm	55 ns
7140LA25PDGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	MATTE TIN	DUAL	2	R-PDIP-T48					Not Qualified	8192 bit			e3				.004 Amp		25 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.