48 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY14B104LA-BA45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	52 mA	524288 words		3	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel			512KX8	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm	6 mm	Not Qualified	4194304 bit	2.7 V	e1	20	260		.005 Amp	10 mm	45 ns
CY14U256LA-BA35XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	COMMON	3		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel		3-STATE	32KX8	32K	2.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm	6 mm		262144 bit	2.7 V	e1		260	YES	.008 Amp	10 mm	35 ns
CY14E116N-Z30XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		5		16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G48	3	5.5 V	1.2 mm	12 mm		16777216 bit	4.5 V			260			18.4 mm	30 ns
CY7C1061GE18-15ZXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G48	3	2.2 V	1.2 mm	12 mm		16777216 bit	1.65 V			260			18.4 mm	15 ns
CY14V101LA-BA25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		3.3	1.8,3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel			128KX8	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm	6 mm	Not Qualified	1048576 bit	3 V	e1	30	260		.008 Amp	10 mm	25 ns
CY7C1061GN30-10ZXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm	12 mm		16777216 bit	2.2 V		30	260			18.4 mm	10 ns
CY62138EV30LL-45BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3	2.5/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA36,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	256KX8	256K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	6 mm	Not Qualified	2097152 bit	2.2 V	e1		260		.000003 Amp	8 mm	45 ns
CY14B104NA-BA20XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	70 mA	262144 words		3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel			256KX16	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm	6 mm	Not Qualified	4194304 bit	2.7 V	e1	20	260		.005 Amp	10 mm	20 ns
CY7C1069G-10BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel			2MX8	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	5.5 V	1 mm	6 mm		16777216 bit	4.5 V	e1		260			8 mm	10 ns
CY62136FV30LL-45BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	18 mA	131072 words	COMMON	3	2.5/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	128KX16	128K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	6 mm	Not Qualified	2097152 bit	2.2 V	e1	20	260		.000004 Amp	8 mm	45 ns
CY62138EV30LL-45BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3	2.5/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA36,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	256KX8	256K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	6 mm	Not Qualified	2097152 bit	2.2 V	e1	20	260		.000003 Amp	8 mm	45 ns
CY7C1061GN30-10BV1XI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel			1MX16	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	6 mm		16777216 bit	2.2 V	e1	30	260			8 mm	10 ns
CY14B256KA-SP25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	3		8	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4			.635 mm	85 Cel		3-STATE	32KX8	32K	2.7 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G48	3	3.6 V	2.794 mm	7.5057 mm		262144 bit	2.7 V	e4	30	260	YES	.005 Amp	15.875 mm	25 ns
CY7C1061G30-10BV1XIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel			1MX16	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	6 mm		16777216 bit	2.2 V	e1		260			8 mm	10 ns
CY62177G30-55BKXI	Infineon Technologies	STANDARD SRAM		48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	45 mA	2097152 words	COMMON	3		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel		3-STATE	2MX16	2M	2.2 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm	6 mm		33554432 bit	2.2 V	e1			YES	.000019 Amp	8 mm	55 ns
CY62167G-45ZXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		5		16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	85 Cel			1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G48	3	5.5 V	1.2 mm	12 mm		16777216 bit	4.5 V			260			18.4 mm	45 ns
CY62136EV30LL-45BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON	3	2.5/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32		SRAMs	.75 mm	85 Cel		3-STATE	128KX16	128K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	6 mm	Not Qualified	2097152 bit	2.2 V	e1	20	260		.000003 Amp	8 mm	45 ns
CY62157G30-45BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel		3-STATE	512KX16	512K	3 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	6 mm		8388608 bit	2.2 V	e1			YES	.0000065 Amp	8 mm	45 ns
CY62167GE30-45BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8		.75 mm	85 Cel			1MX16	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	6 mm		16777216 bit	2.2 V	e1	30	260			8 mm	45 ns
CY14B256LA-SP25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		3	3/3.3	8	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4		SRAMs	.635 mm	85 Cel			32KX8	32K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G48	3	3.6 V	2.794 mm	7.5057 mm	Not Qualified	262144 bit	2.7 V	e4	30	260		.005 Amp	15.875 mm	25 ns
CY7C1061G30-10BV1XE	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	160 mA	1048576 words	COMMON	3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	125 Cel		3-STATE	1MX16	1M	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1 mm	6 mm		16777216 bit	2.2 V	e1		260	YES	.05 Amp	8 mm	10 ns
CY14V104LA-BA25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	70 mA	524288 words	COMMON	3.3	1.8,3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	512KX8	512K	3 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm	6 mm	Not Qualified	4194304 bit	3 V	e1	30	260	YES	.008 Amp	10 mm	25 ns
CY62167EV18LL-55BVI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	1.8	1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	1MX16	1M	1 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3	2.25 V	1 mm	6 mm	Not Qualified	16777216 bit	1.65 V	e0		260		.00001 Amp	8 mm	55 ns
CY62137V18LL-70BAI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	7 mA	131072 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	128KX16	128K	1 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48					Not Qualified	2097152 bit		e0				.000001 Amp		70 ns
CY14B108L-BA45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	57 mA	1048576 words		3	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel			1MX8	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm	6 mm	Not Qualified	8388608 bit	2.7 V	e1	20	260		.01 Amp	10 mm	45 ns
CY7C1061GE-10BV1XIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel			1MX16	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	5.5 V	1 mm	6 mm		16777216 bit	4.5 V	e1		260			8 mm	10 ns
CY14B104LA-BA25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	70 mA	524288 words		3	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel			512KX8	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm	6 mm	Not Qualified	4194304 bit	2.7 V	e1	20	260		.005 Amp	10 mm	25 ns
CY7C1051H30-10BVX	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	110 mA	524288 words	COMMON	3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel		3-STATE	512KX16	512K	1 V	-40 Cel		BOTTOM	1	R-PBGA-B48		3.6 V	1 mm	6 mm		8388608 bit	2.2 V				YES	.03 Amp	8 mm	10 ns
TC55V400XB-70	Toshiba	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel			256KX16	256K		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1 mm	9 mm	Not Qualified	4194304 bit	2.7 V						12 mm	70 ns
TC55W1600XB8	Toshiba	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	COMMON	3	2.5/3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32		SRAMs	.8 mm	85 Cel		3-STATE	1MX16	1M	1.5 V	-40 Cel		BOTTOM		R-PBGA-B48		3.1 V	1.4 mm	10 mm	Not Qualified	16777216 bit	2.3 V		NOT SPECIFIED	NOT SPECIFIED			12 mm	100 ns
TC55V400XB-10	Toshiba	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel			256KX16	256K		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1 mm	9 mm	Not Qualified	4194304 bit	2.7 V						12 mm	100 ns
TC51WHM516AXGN65	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		2.75		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel			2MX16	2M		-25 Cel		BOTTOM		R-PBGA-B48		3.3 V	1.2 mm	6 mm	Not Qualified	33554432 bit	2.6 V						9 mm	65 ns
TC55W400XB5	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3	2.5/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	1.5 V	-40 Cel		BOTTOM		R-PBGA-B48		3.3 V	1.2 mm	6.5 mm	Not Qualified	4194304 bit	2.3 V		NOT SPECIFIED	NOT SPECIFIED		.000001 Amp	8 mm	70 ns
TC51WKM516AXGN65	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		2.75		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel			2MX16	2M		-25 Cel		BOTTOM		R-PBGA-B48		3.1 V	1.2 mm	6 mm	Not Qualified	33554432 bit	2.6 V						9 mm	65 ns
TC55V400TR-70	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.55,20		SRAMs	.5 mm	85 Cel	YES	3-STATE	256KX16	256K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	4194304 bit	2.7 V	e0				.000005 Amp	12.4 mm	70 ns
TC55V200UB-70	Toshiba	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	55 mA	131072 words	COMMON	3	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	128KX16	128K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48		3.6 V	.98 mm	6.29 mm	Not Qualified	2097152 bit	2.7 V	e0					8.68 mm	70 ns
TC51WHM616AXBN65	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		4194304 words		2.75		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.75 mm	85 Cel			4MX16	4M		-25 Cel		BOTTOM		R-PBGA-B48		3.3 V	1.2 mm	8 mm	Not Qualified	67108864 bit	2.6 V		NOT SPECIFIED	NOT SPECIFIED			11 mm	65 ns
TC55VCM416BSGN55	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	1048576 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.55,20		SRAMs	.5 mm	85 Cel		3-STATE	1MX16	1M	1.5 V	-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	16777216 bit	2.3 V						12.4 mm	70 ns
TC51WHM516BXGN70	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	2097152 words	COMMON	2.75	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		Other Memory ICs	.75 mm	85 Cel		3-STATE	2MX16	2M		-25 Cel		BOTTOM		R-PBGA-B48		3.3 V	1.2 mm	6 mm	Not Qualified	33554432 bit	2.6 V		NOT SPECIFIED	NOT SPECIFIED		.000005 Amp	7 mm	70 ns
TC55V040XB-85	Toshiba	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel			512KX8	512K		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1 mm	9 mm	Not Qualified	4194304 bit	2.7 V						12 mm	85 ns
TC55YEM216ABXN70	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.75 mm	85 Cel			256KX16	256K		-40 Cel		BOTTOM		R-PBGA-B48		2.2 V	1.2 mm	6.5 mm	Not Qualified	4194304 bit	1.65 V		NOT SPECIFIED	NOT SPECIFIED			8 mm	70 ns
TC55W800FT-70	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	COMMON	3	2.5/3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	SRAMs	.5 mm	85 Cel		3-STATE	512KX16	512K	1.5 V	-40 Cel		DUAL		R-PDSO-G48		3.3 V	1.2 mm	12 mm	Not Qualified	8388608 bit	2.3 V		NOT SPECIFIED	NOT SPECIFIED			18.4 mm	85 ns
TC55VEM416BXGN40	Toshiba	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	1048576 words	COMMON		2.5/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	1MX16	1M	1.5 V	-40 Cel		BOTTOM		R-PBGA-B48					Not Qualified	16777216 bit								55 ns
TC55YEM416BXGN55	Toshiba	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	12 mA	1048576 words	COMMON		1.8/2	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	1MX16	1M	1 V	-40 Cel		BOTTOM		R-PBGA-B48					Not Qualified	16777216 bit								70 ns
TC55V200FT-100	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.55,20		SRAMs	.5 mm	85 Cel		3-STATE	128KX16	128K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G48					Not Qualified	2097152 bit		e0						100 ns
TC51W3217XB	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		2.75		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel			2MX16	2M		-20 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		3.1 V	1.2 mm	6 mm	Not Qualified	33554432 bit	2.5 V	e0					9 mm	25 ns
TC55VCM316BTGN40	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		SRAMs	.5 mm	85 Cel		3-STATE	512KX16	512K	1.5 V	-40 Cel	TIN COPPER/TIN SILVER	DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	8388608 bit	2.3 V	e2					18.4 mm	55 ns
TC55YCM316BSGN70	Toshiba	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	524288 words	COMMON	1.8	1.8/2	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.55,20		SRAMs	.5 mm	85 Cel		3-STATE	512KX16	512K	1 V	-40 Cel		DUAL		R-PDSO-G48		2.2 V	1.2 mm	12 mm	Not Qualified	8388608 bit	1.65 V						12.4 mm	85 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.