48 SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

TC55VCM316BSGN45

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

20 mA

524288 words

COMMON

3

2.5/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.55,20

SRAMs

.5 mm

85 Cel

3-STATE

512KX16

512K

1.5 V

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

8388608 bit

2.3 V

12.4 mm

55 ns

TC51WKM616AXGN75

Toshiba

PSEUDO STATIC RAM

OTHER

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

50 mA

4194304 words

COMMON

2.75

1.8,3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

Other Memory ICs

.75 mm

85 Cel

3-STATE

4MX16

4M

-25 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3.3 V

1.2 mm

8 mm

Not Qualified

67108864 bit

2.6 V

e1

.000005 Amp

11 mm

75 ns

TC55V200UB-85

Toshiba

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

50 mA

131072 words

COMMON

3

3/3.3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

128KX16

128K

1.5 V

-40 Cel

Tin/Lead (Sn/Pb)

BOTTOM

R-PBGA-B48

3.6 V

.98 mm

6.29 mm

Not Qualified

2097152 bit

2.7 V

e0

8.68 mm

85 ns

TC55VCM316BTGN55

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

20 mA

524288 words

COMMON

3

2.5/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

SRAMs

.5 mm

85 Cel

3-STATE

512KX16

512K

1.5 V

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

8388608 bit

2.3 V

NOT SPECIFIED

NOT SPECIFIED

18.4 mm

70 ns

TC55W800XB8

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

50 mA

524288 words

COMMON

2.7

2.5/3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

512KX16

512K

1.5 V

-40 Cel

BOTTOM

R-PBGA-B48

3.3 V

1.2 mm

8 mm

Not Qualified

8388608 bit

2.3 V

11 mm

85 ns

TC55YCM416BSGN70

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

12 mA

1048576 words

COMMON

1.8

1.8/2

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.55,20

SRAMs

.5 mm

85 Cel

3-STATE

1MX16

1M

1 V

-40 Cel

DUAL

R-PDSO-G48

2.2 V

1.2 mm

12 mm

Not Qualified

16777216 bit

1.65 V

12.4 mm

85 ns

TC55VEM316BXGN55

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

20 mA

524288 words

COMMON

3

2.5/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

512KX16

512K

1.5 V

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6 mm

Not Qualified

8388608 bit

2.3 V

7 mm

70 ns

TC55VCM216ASGN55

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

262144 words

COMMON

3

2.5/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.55,20

SRAMs

.5 mm

85 Cel

3-STATE

256KX16

256K

1.5 V

-40 Cel

Tin/Silver (Sn/Ag)

DUAL

R-PDSO-G48

3

3.6 V

1.2 mm

12 mm

Not Qualified

4194304 bit

2.3 V

e2

40

260

12.4 mm

70 ns

TC51WHM516AXBN65

Toshiba

PSEUDO STATIC RAM

OTHER

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

40 mA

2097152 words

COMMON

2.75

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

Other Memory ICs

.75 mm

85 Cel

3-STATE

2MX16

2M

-25 Cel

BOTTOM

R-PBGA-B48

3.3 V

1.2 mm

6 mm

Not Qualified

33554432 bit

2.6 V

NOT SPECIFIED

NOT SPECIFIED

.000005 Amp

7 mm

65 ns

TC55YEM416BXGN70

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

12 mA

1048576 words

COMMON

1.8

1.8/2

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

1MX16

1M

1 V

-40 Cel

BOTTOM

R-PBGA-B48

2.2 V

1.2 mm

8 mm

Not Qualified

16777216 bit

1.65 V

11 mm

85 ns

TC55V400XB-85

Toshiba

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

262144 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

256KX16

256K

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

1 mm

9 mm

Not Qualified

4194304 bit

2.7 V

12 mm

85 ns

TC55V200FT-70

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

55 mA

131072 words

COMMON

3

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.55,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX16

128K

1.5 V

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

2097152 bit

2.7 V

e0

12.4 mm

70 ns

TC55VCM416BTGN40

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

20 mA

1048576 words

COMMON

2.5/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

SRAMs

.5 mm

85 Cel

3-STATE

1MX16

1M

1.5 V

-40 Cel

DUAL

R-PDSO-G48

Not Qualified

16777216 bit

55 ns

TC55YEM216ABXN55

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

262144 words

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.75 mm

85 Cel

256KX16

256K

-40 Cel

BOTTOM

R-PBGA-B48

2.2 V

1.2 mm

6.5 mm

Not Qualified

4194304 bit

1.65 V

NOT SPECIFIED

NOT SPECIFIED

8 mm

55 ns

TC55V400AFTR-55

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

262144 words

COMMON

2.5/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.55,20

SRAMs

.5 mm

85 Cel

YES

3-STATE

256KX16

256K

1.5 V

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G48

Not Qualified

4194304 bit

e0

70 ns

TC51WHM616BXGN70

Toshiba

PSEUDO STATIC RAM

OTHER

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

50 mA

4194304 words

COMMON

2.75

2.7/3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

Other Memory ICs

.75 mm

85 Cel

3-STATE

4MX16

4M

-25 Cel

BOTTOM

R-PBGA-B48

3.3 V

1.2 mm

8 mm

Not Qualified

67108864 bit

2.6 V

NOT SPECIFIED

NOT SPECIFIED

.000005 Amp

11 mm

70 ns

TC55VEM416BXGN55

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

20 mA

1048576 words

COMMON

3

2.5/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

1MX16

1M

1.5 V

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

8 mm

Not Qualified

16777216 bit

2.3 V

NOT SPECIFIED

NOT SPECIFIED

11 mm

70 ns

TC55V400AFT-70

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

262144 words

COMMON

3

2.5/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.55,20

SRAMs

.5 mm

85 Cel

3-STATE

256KX16

256K

1.5 V

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

4194304 bit

2.3 V

NOT SPECIFIED

NOT SPECIFIED

12.4 mm

70 ns

TC51W6417XB-85

Toshiba

PSEUDO STATIC RAM

OTHER

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

40 mA

4194304 words

COMMON

2.75

2.7/3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,32

Other Memory ICs

.8 mm

85 Cel

3-STATE

4MX16

4M

-25 Cel

BOTTOM

R-PBGA-B48

3.3 V

1.2 mm

6 mm

Not Qualified

67108864 bit

2.5 V

NOT SPECIFIED

NOT SPECIFIED

.000005 Amp

9 mm

85 ns

TC55V200TR-70

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TSOP1-R

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

55 mA

131072 words

COMMON

3

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.55,20

SRAMs

.5 mm

85 Cel

YES

3-STATE

128KX16

128K

1.5 V

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

2097152 bit

2.7 V

e0

12.4 mm

70 ns

TC51WKM616AXBN75

Toshiba

PSEUDO STATIC RAM

OTHER

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

50 mA

4194304 words

COMMON

2.75

1.8/2,3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

Other Memory ICs

.75 mm

85 Cel

3-STATE

4MX16

4M

-25 Cel

BOTTOM

R-PBGA-B48

3.3 V

1.2 mm

8 mm

Not Qualified

67108864 bit

2.6 V

NOT SPECIFIED

NOT SPECIFIED

.000005 Amp

11 mm

75 ns

TC55VBM316AFTN40

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

524288 words

COMMON

3

2.5/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

SRAMs

.5 mm

85 Cel

3-STATE

512KX16

512K

1.5 V

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

8388608 bit

2.3 V

NOT SPECIFIED

NOT SPECIFIED

18.4 mm

55 ns

TC55VCM216ASGN40

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

262144 words

COMMON

3

2.5/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.55,20

SRAMs

.5 mm

85 Cel

3-STATE

256KX16

256K

1.5 V

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

4194304 bit

2.3 V

12.4 mm

55 ns

TC55V200FT-10

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

131072 words

COMMON

3

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.55,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX16

128K

1.5 V

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

2097152 bit

2.7 V

e0

.000005 Amp

12.4 mm

100 ns

TC55VEM316BXGN45

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

20 mA

524288 words

COMMON

3

2.5/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

512KX16

512K

1.5 V

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6 mm

Not Qualified

8388608 bit

2.3 V

7 mm

55 ns

TC55V020UB-85

Toshiba

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

262144 words

3

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

256KX8

256K

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

.98 mm

6.29 mm

Not Qualified

2097152 bit

2.7 V

8.68 mm

85 ns

TC55W1600FT-55

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

1048576 words

COMMON

3

2.5/3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

SRAMs

.5 mm

85 Cel

3-STATE

1MX16

1M

1.5 V

-40 Cel

DUAL

R-PDSO-G48

3.1 V

1.2 mm

12 mm

Not Qualified

16777216 bit

2.3 V

NOT SPECIFIED

NOT SPECIFIED

18.4 mm

70 ns

TC51WHM516AXGN70

Toshiba

PSEUDO STATIC RAM

OTHER

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

40 mA

2097152 words

COMMON

2.75

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

Other Memory ICs

.75 mm

85 Cel

3-STATE

2MX16

2M

-25 Cel

BOTTOM

R-PBGA-B48

3.3 V

1.2 mm

6 mm

Not Qualified

33554432 bit

2.6 V

.000005 Amp

7 mm

70 ns

TC51WKM516AXGN75

Toshiba

PSEUDO STATIC RAM

OTHER

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

40 mA

2097152 words

COMMON

2.75

1.8,3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

Other Memory ICs

.75 mm

85 Cel

3-STATE

2MX16

2M

-25 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3.3 V

1.2 mm

6 mm

Not Qualified

33554432 bit

2.6 V

e1

.000005 Amp

7 mm

75 ns

TC51WKM516AXGN70

Toshiba

PSEUDO STATIC RAM

OTHER

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2097152 words

2.75

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

85 Cel

2MX16

2M

-25 Cel

BOTTOM

R-PBGA-B48

3.1 V

1.2 mm

6 mm

Not Qualified

33554432 bit

2.6 V

9 mm

70 ns

TC55W400XB7

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

45 mA

262144 words

COMMON

3

2.5/3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

256KX16

256K

1.5 V

-40 Cel

BOTTOM

R-PBGA-B48

3.3 V

1.2 mm

6.5 mm

Not Qualified

4194304 bit

2.3 V

NOT SPECIFIED

NOT SPECIFIED

.000001 Amp

8 mm

85 ns

TC51WHM616AXBN70

Toshiba

PSEUDO STATIC RAM

OTHER

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

50 mA

4194304 words

COMMON

2.75

2.7/3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

Other Memory ICs

.75 mm

85 Cel

3-STATE

4MX16

4M

-25 Cel

BOTTOM

R-PBGA-B48

3.3 V

1.2 mm

8 mm

Not Qualified

67108864 bit

2.6 V

NOT SPECIFIED

NOT SPECIFIED

.0001 Amp

11 mm

70 ns

TC55VCM416BSGN40

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

20 mA

1048576 words

COMMON

2.5/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.55,20

SRAMs

.5 mm

85 Cel

3-STATE

1MX16

1M

1.5 V

-40 Cel

DUAL

R-PDSO-G48

Not Qualified

16777216 bit

55 ns

TC55YCM416BSGN55

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

12 mA

1048576 words

COMMON

1.8/2

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.55,20

SRAMs

.5 mm

85 Cel

3-STATE

1MX16

1M

1 V

-40 Cel

DUAL

R-PDSO-G48

Not Qualified

16777216 bit

70 ns

TC55VCM416BTGN55

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

20 mA

1048576 words

COMMON

3

2.5/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

SRAMs

.5 mm

85 Cel

3-STATE

1MX16

1M

1.5 V

-40 Cel

DUAL

R-PDSO-G48

3

3.6 V

1.2 mm

12 mm

Not Qualified

16777216 bit

2.3 V

18.4 mm

70 ns

TC55VEM216AXBN40

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

35 mA

262144 words

COMMON

3

2.5/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

256KX16

256K

1.5 V

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6 mm

Not Qualified

4194304 bit

2.3 V

NOT SPECIFIED

NOT SPECIFIED

.000002 Amp

7 mm

40 ns

TC55VEM216ABXN55

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

35 mA

262144 words

COMMON

3

2.5/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

256KX16

256K

1.5 V

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6.5 mm

Not Qualified

4194304 bit

2.3 V

NOT SPECIFIED

NOT SPECIFIED

.000002 Amp

8 mm

70 ns

TC55YCM416BTGN55

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

12 mA

1048576 words

COMMON

1.8/2

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

SRAMs

.5 mm

85 Cel

3-STATE

1MX16

1M

1 V

-40 Cel

DUAL

R-PDSO-G48

Not Qualified

16777216 bit

70 ns

TC55VBM416AFTN55

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

1048576 words

COMMON

3

2.5/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

SRAMs

.5 mm

85 Cel

3-STATE

1MX16

1M

1.5 V

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

16777216 bit

2.3 V

e0

NOT SPECIFIED

NOT SPECIFIED

18.4 mm

70 ns

TC55W800FT-55

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

524288 words

COMMON

3

2.5/3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

SRAMs

.5 mm

85 Cel

3-STATE

512KX16

512K

1.5 V

-40 Cel

DUAL

R-PDSO-G48

3.3 V

1.2 mm

12 mm

Not Qualified

8388608 bit

2.3 V

NOT SPECIFIED

NOT SPECIFIED

18.4 mm

70 ns

TC55V400FT-85

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

262144 words

COMMON

3

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.55,20

SRAMs

.5 mm

85 Cel

3-STATE

256KX16

256K

1.5 V

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

4194304 bit

2.7 V

.000005 Amp

12.4 mm

85 ns

TC55VEM416AXGN55

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

35 mA

1048576 words

COMMON

3

2.5/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

1MX16

1M

1.5 V

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

8 mm

Not Qualified

16777216 bit

2.3 V

11 mm

70 ns

TC55VCM316BSGN40

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

20 mA

524288 words

COMMON

3

2.5/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.55,20

SRAMs

.5 mm

85 Cel

3-STATE

512KX16

512K

1.5 V

-40 Cel

TIN COPPER/TIN SILVER

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

8388608 bit

2.3 V

e2

12.4 mm

55 ns

TC51W6417XB-80

Toshiba

PSEUDO STATIC RAM

OTHER

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

40 mA

4194304 words

COMMON

2.75

2.7/3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,32

Other Memory ICs

.8 mm

85 Cel

3-STATE

4MX16

4M

-25 Cel

BOTTOM

R-PBGA-B48

3.3 V

1.2 mm

6 mm

Not Qualified

67108864 bit

2.5 V

NOT SPECIFIED

NOT SPECIFIED

.000005 Amp

9 mm

80 ns

TC55YEM316AXGN55

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

COMMON

2

1.8/2

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

512KX16

512K

1 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

2.2 V

1.2 mm

8 mm

Not Qualified

8388608 bit

1.65 V

e1

NOT SPECIFIED

250

11 mm

70 ns

TC55YCM316BTGN70

Toshiba

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

12 mA

524288 words

COMMON

1.8

1.8/2

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

SRAMs

.5 mm

85 Cel

3-STATE

512KX16

512K

1 V

-40 Cel

DUAL

R-PDSO-G48

2.2 V

1.2 mm

12 mm

Not Qualified

8388608 bit

1.65 V

18.4 mm

85 ns

TC51WHM516AXBN70

Toshiba

PSEUDO STATIC RAM

OTHER

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

40 mA

2097152 words

COMMON

2.75

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

Other Memory ICs

.75 mm

85 Cel

3-STATE

2MX16

2M

-25 Cel

BOTTOM

R-PBGA-B48

3.3 V

1.2 mm

6 mm

Not Qualified

33554432 bit

2.6 V

NOT SPECIFIED

NOT SPECIFIED

.000005 Amp

7 mm

70 ns

TC51WKM516AXBN75

Toshiba

PSEUDO STATIC RAM

OTHER

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2097152 words

COMMON

2.75

1.8/2,3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

Other Memory ICs

.75 mm

85 Cel

3-STATE

2MX16

2M

-25 Cel

BOTTOM

R-PBGA-B48

3.3 V

1.2 mm

6 mm

Not Qualified

33554432 bit

2.6 V

NOT SPECIFIED

NOT SPECIFIED

.000005 Amp

7 mm

75 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.