Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
8 |
IN-LINE |
2.54 mm |
125 Cel |
1KX8 |
1K |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T48 |
5.5 V |
4.826 mm |
15.24 mm |
Not Qualified |
8192 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN |
e0 |
60.96 mm |
70 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
MIL-STD-883 |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
8 |
CHIP CARRIER |
1.016 mm |
125 Cel |
4KX8 |
4K |
-55 Cel |
QUAD |
S-CQCC-N48 |
5.5 V |
3.048 mm |
14.3002 mm |
Qualified |
32768 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
14.3002 mm |
55 ns |
|||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QFF |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
MIL-STD-883 |
FLAT |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
FLATPACK |
1.27 mm |
125 Cel |
2KX8 |
2K |
-55 Cel |
TIN LEAD |
QUAD |
S-XQFP-F48 |
5.5 V |
2.74 mm |
Qualified |
16384 bit |
4.5 V |
e0 |
35 ns |
|||||||||||||||||||||||||
Renesas Electronics |
SRAM MODULE |
INDUSTRIAL |
48 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
60 mA |
65536 words |
COMMON |
5 |
5 |
16 |
IN-LINE |
DIP48,1.3 |
SRAMs |
2.54 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
2 V |
-40 Cel |
DUAL |
R-XDIP-T48 |
Not Qualified |
1048576 bit |
.001 Amp |
200 ns |
||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QFF |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
MIL-STD-883 |
FLAT |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
FLATPACK |
1.27 mm |
125 Cel |
2KX8 |
2K |
-55 Cel |
TIN LEAD |
QUAD |
S-XQFP-F48 |
5.5 V |
2.74 mm |
Not Qualified |
16384 bit |
4.5 V |
e0 |
25 ns |
|||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
8 |
IN-LINE |
2.54 mm |
125 Cel |
1KX8 |
1K |
-55 Cel |
DUAL |
R-GDIP-T48 |
5.5 V |
4.826 mm |
15.24 mm |
Qualified |
8192 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN |
NOT SPECIFIED |
NOT SPECIFIED |
60.96 mm |
55 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
225 mA |
1024 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC48,.56SQ,40 |
SRAMs |
1.016 mm |
125 Cel |
3-STATE |
1KX8 |
1K |
4.5 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-CQCC-N48 |
1 |
5.5 V |
3.048 mm |
14.3002 mm |
Not Qualified |
8192 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN |
e0 |
240 |
YES |
.03 Amp |
14.3002 mm |
70 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
MIL-STD-883 |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
300 mA |
4096 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC48,.56SQ,40 |
SRAMs |
1.016 mm |
125 Cel |
3-STATE |
4KX8 |
4K |
4.5 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-CQCC-N48 |
1 |
5.5 V |
3.048 mm |
14.3002 mm |
Qualified |
32768 bit |
4.5 V |
e0 |
240 |
YES |
.03 Amp |
14.3002 mm |
35 ns |
|||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
200 mA |
1024 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC48,.56SQ,40 |
SRAMs |
1.016 mm |
125 Cel |
3-STATE |
1KX8 |
1K |
4.5 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-CQCC-N48 |
1 |
5.5 V |
3.048 mm |
14.3002 mm |
Not Qualified |
8192 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN |
e0 |
240 |
YES |
.03 Amp |
14.3002 mm |
90 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
280 mA |
4096 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP48,.6 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
4KX8 |
4K |
4.5 V |
-55 Cel |
TIN LEAD |
DUAL |
2 |
R-CDIP-T48 |
1 |
5.5 V |
4.826 mm |
15.24 mm |
Qualified |
32768 bit |
4.5 V |
e0 |
240 |
YES |
.03 Amp |
60.96 mm |
45 ns |
|||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QCCN |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
MIL-STD-883 |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
8 |
CHIP CARRIER |
1.016 mm |
125 Cel |
1KX8 |
1K |
-55 Cel |
QUAD |
S-XQCC-N48 |
5.5 V |
3.18 mm |
14.3002 mm |
Qualified |
8192 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN |
NOT SPECIFIED |
NOT SPECIFIED |
14.3002 mm |
55 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QFF |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
225 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFL48,.75SQ |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
1KX8 |
1K |
4.5 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-XQFP-F48 |
5.5 V |
2.7432 mm |
19.05 mm |
Not Qualified |
8192 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN |
e0 |
YES |
.03 Amp |
19.05 mm |
70 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QCCN |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
MIL-STD-883 |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
8 |
CHIP CARRIER |
1.016 mm |
125 Cel |
1KX8 |
1K |
-55 Cel |
QUAD |
S-XQCC-N48 |
5.5 V |
3.18 mm |
14.3002 mm |
Not Qualified |
8192 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN |
NOT SPECIFIED |
NOT SPECIFIED |
14.3002 mm |
45 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QFF |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
185 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFL48,.75SQ |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
2 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-XQFP-F48 |
5.5 V |
2.7432 mm |
19.05 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
e0 |
YES |
.004 Amp |
19.05 mm |
45 ns |
||||||||||||
Renesas Electronics |
SRAM MODULE |
INDUSTRIAL |
48 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
SYNCHRONOUS |
47 mA |
16384 words |
COMMON |
5 |
5 |
16 |
IN-LINE |
DIP48,1.3 |
SRAMs |
2.54 mm |
85 Cel |
3-STATE |
16KX16 |
16K |
2 V |
-40 Cel |
DUAL |
R-XDIP-T48 |
5.5 V |
Not Qualified |
262144 bit |
4.5 V |
.00035 Amp |
170 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
230 mA |
1024 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP48,.6 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
1KX8 |
1K |
4.5 V |
-55 Cel |
TIN LEAD |
DUAL |
2 |
R-CDIP-T48 |
1 |
5.5 V |
4.826 mm |
15.24 mm |
Qualified |
8192 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN |
e0 |
240 |
YES |
.03 Amp |
60.96 mm |
55 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QFF |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
MIL-STD-883 |
FLAT |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
8 |
FLATPACK |
1.27 mm |
125 Cel |
1KX8 |
1K |
-55 Cel |
TIN LEAD |
QUAD |
S-XQFP-F48 |
5.5 V |
2.74 mm |
19.05 mm |
Not Qualified |
8192 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN |
e0 |
19.05 mm |
55 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
160 mA |
1024 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP48,.6 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
1KX8 |
1K |
2 V |
-55 Cel |
TIN LEAD |
DUAL |
2 |
R-CDIP-T48 |
1 |
5.5 V |
4.826 mm |
15.24 mm |
Not Qualified |
8192 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN |
e0 |
240 |
YES |
.004 Amp |
60.96 mm |
90 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QFF |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
240 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFL48,.75SQ |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
2 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-CQFP-F48 |
5.5 V |
2.7432 mm |
19.05 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
e0 |
YES |
.004 Amp |
19.05 mm |
25 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
48 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
60 mA |
4194304 words |
COMMON |
3/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP48,.8,20 |
8 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
4MX16 |
4M |
2 V |
0 Cel |
DUAL |
R-PDSO-G48 |
2 |
Not Qualified |
67108864 bit |
260 |
.000024 Amp |
55 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QFF |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
MIL-STD-883 |
FLAT |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
FLATPACK |
1.27 mm |
125 Cel |
2KX8 |
2K |
-55 Cel |
TIN LEAD |
QUAD |
S-XQFP-F48 |
5.5 V |
2.74 mm |
Not Qualified |
16384 bit |
4.5 V |
e0 |
90 ns |
|||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
185 mA |
2048 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC48,.56SQ,40 |
SRAMs |
1.016 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
2 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-CQCC-N48 |
1 |
5.5 V |
3.048 mm |
14.3002 mm |
Qualified |
16384 bit |
4.5 V |
e0 |
240 |
.004 Amp |
14.3002 mm |
55 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
185 mA |
1024 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP48,.6 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
1KX8 |
1K |
2 V |
-55 Cel |
TIN LEAD |
DUAL |
2 |
R-CDIP-T48 |
1 |
5.5 V |
4.826 mm |
15.24 mm |
Qualified |
8192 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN |
e0 |
240 |
YES |
.004 Amp |
60.96 mm |
55 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QFF |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
MIL-STD-883 |
FLAT |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
8 |
FLATPACK |
1.27 mm |
125 Cel |
1KX8 |
1K |
-55 Cel |
TIN LEAD |
QUAD |
S-XQFP-F48 |
5.5 V |
2.74 mm |
19.05 mm |
Not Qualified |
8192 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN |
e0 |
19.05 mm |
70 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QCCN |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
MIL-STD-883 |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
8 |
CHIP CARRIER |
1.016 mm |
125 Cel |
1KX8 |
1K |
-55 Cel |
QUAD |
S-XQCC-N48 |
5.5 V |
3.18 mm |
14.3002 mm |
Not Qualified |
8192 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN |
NOT SPECIFIED |
NOT SPECIFIED |
14.3002 mm |
45 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QFF |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
290 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFL48,.75SQ |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
4.5 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-CQFP-F48 |
5.5 V |
2.7432 mm |
19.05 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
e0 |
YES |
.03 Amp |
19.05 mm |
35 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QFF |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
MIL-STD-883 |
FLAT |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
8 |
FLATPACK |
1.27 mm |
125 Cel |
1KX8 |
1K |
-55 Cel |
TIN LEAD |
QUAD |
S-XQFP-F48 |
5.5 V |
2.74 mm |
19.05 mm |
Qualified |
8192 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN |
e0 |
19.05 mm |
35 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
IN-LINE |
125 Cel |
2KX8 |
2K |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T48 |
5.5 V |
Qualified |
16384 bit |
4.5 V |
e0 |
90 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
260 mA |
4096 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP48,.6 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
4KX8 |
4K |
2 V |
-55 Cel |
TIN LEAD |
DUAL |
2 |
R-CDIP-T48 |
1 |
5.5 V |
4.826 mm |
15.24 mm |
Qualified |
32768 bit |
4.5 V |
e0 |
240 |
YES |
.004 Amp |
60.96 mm |
35 ns |
|||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
IN-LINE |
125 Cel |
2KX8 |
2K |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T48 |
5.5 V |
Not Qualified |
16384 bit |
4.5 V |
e0 |
45 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QFF |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
225 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFL48,.75SQ |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
4.5 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-XQFP-F48 |
5.5 V |
2.7432 mm |
19.05 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
e0 |
YES |
.03 Amp |
19.05 mm |
70 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
230 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP48,.6 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
2 V |
-55 Cel |
TIN LEAD |
DUAL |
2 |
R-CDIP-T48 |
5.5 V |
4.826 mm |
15.24 mm |
Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
e0 |
YES |
.004 Amp |
60.96 mm |
35 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QFF |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
MIL-STD-883 |
FLAT |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
FLATPACK |
1.27 mm |
125 Cel |
2KX8 |
2K |
-55 Cel |
TIN LEAD |
QUAD |
S-XQFP-F48 |
5.5 V |
2.74 mm |
Not Qualified |
16384 bit |
4.5 V |
e0 |
35 ns |
|||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QFF |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
200 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFL48,.75SQ |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
4.5 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-XQFP-F48 |
5.5 V |
2.7432 mm |
19.05 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
e0 |
YES |
.03 Amp |
19.05 mm |
90 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
60 mA |
4194304 words |
COMMON |
3/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP48,.8,20 |
8 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
4MX16 |
4M |
2 V |
-40 Cel |
DUAL |
R-PDSO-G48 |
2 |
Not Qualified |
67108864 bit |
260 |
.000024 Amp |
55 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QFF |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
MIL-STD-883 |
FLAT |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
8 |
FLATPACK |
1.27 mm |
125 Cel |
1KX8 |
1K |
-55 Cel |
TIN LEAD |
QUAD |
S-XQFP-F48 |
5.5 V |
2.74 mm |
Not Qualified |
8192 bit |
4.5 V |
e0 |
90 ns |
|||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QFF |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
MIL-STD-883 |
FLAT |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
FLATPACK |
1.27 mm |
125 Cel |
2KX8 |
2K |
-55 Cel |
TIN LEAD |
QUAD |
S-XQFP-F48 |
5.5 V |
2.74 mm |
Not Qualified |
16384 bit |
4.5 V |
e0 |
55 ns |
|||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
230 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP48,.6 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
4.5 V |
-55 Cel |
TIN LEAD |
DUAL |
2 |
R-GDIP-T48 |
1 |
5.5 V |
Qualified |
16384 bit |
4.5 V |
e0 |
240 |
.03 Amp |
55 ns |
|||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
270 mA |
4096 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP48,.6 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
4KX8 |
4K |
4.5 V |
-55 Cel |
TIN LEAD |
DUAL |
2 |
R-CDIP-T48 |
1 |
5.5 V |
4.826 mm |
15.24 mm |
Qualified |
32768 bit |
4.5 V |
e0 |
240 |
YES |
.03 Amp |
60.96 mm |
55 ns |
|||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
290 mA |
2048 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC48,.56SQ,40 |
SRAMs |
1.016 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
4.5 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-CQCC-N48 |
5.5 V |
3.048 mm |
14.3002 mm |
Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
e0 |
YES |
.03 Amp |
14.3002 mm |
35 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
IN-LINE |
125 Cel |
2KX8 |
2K |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T48 |
5.5 V |
Not Qualified |
16384 bit |
4.5 V |
e0 |
70 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QFF |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
MIL-STD-883 |
FLAT |
PARALLEL |
ASYNCHRONOUS |
260 mA |
4096 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFL48,.75SQ |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
4KX8 |
4K |
2 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-XQFP-F48 |
1 |
5.5 V |
2.74 mm |
Qualified |
32768 bit |
4.5 V |
e0 |
240 |
.004 Amp |
35 ns |
||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QFF |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
180 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFL48,.75SQ |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
2 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-XQFP-F48 |
5.5 V |
2.7432 mm |
19.05 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
e0 |
YES |
.004 Amp |
19.05 mm |
70 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QCCN |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
MIL-STD-883 |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
8 |
CHIP CARRIER |
1.016 mm |
125 Cel |
1KX8 |
1K |
-55 Cel |
QUAD |
S-XQCC-N48 |
5.5 V |
3.18 mm |
14.3002 mm |
Qualified |
8192 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN |
NOT SPECIFIED |
NOT SPECIFIED |
14.3002 mm |
45 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QFF |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
230 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFL48,.75SQ |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
4.5 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-CQFP-F48 |
5.5 V |
2.7432 mm |
19.05 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
e0 |
YES |
.03 Amp |
19.05 mm |
55 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
230 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP48,.6 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
4.5 V |
-55 Cel |
TIN LEAD |
DUAL |
2 |
R-GDIP-T48 |
1 |
5.5 V |
Not Qualified |
16384 bit |
4.5 V |
e0 |
240 |
.03 Amp |
45 ns |
|||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
160 mA |
2048 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC48,.56SQ,40 |
SRAMs |
1.016 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
2 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-CQCC-N48 |
1 |
5.5 V |
3.048 mm |
14.3002 mm |
Not Qualified |
16384 bit |
4.5 V |
e0 |
240 |
.004 Amp |
14.3002 mm |
90 ns |
||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-PRF-38535 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
170 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP48,.6 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
2 V |
-55 Cel |
MATTE TIN |
DUAL |
2 |
R-CDIP-T48 |
5.5 V |
4.826 mm |
15.24 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER DOWN |
e3 |
.004 Amp |
60.96 mm |
35 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.