48 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IDT7134SA20F8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QFF	SQUARE	CERAMIC	YES		CMOS		FLAT	PARALLEL	ASYNCHRONOUS	280 mA	4096 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-XQFP-F48					Not Qualified	32768 bit			e0				.015 Amp		20 ns
IDT7042SA45PB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE			2.54 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	BATTERY BACK-UP	e0					61.849 mm	45 ns
IDT7142LA35CG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	MATTE TIN	DUAL	2	R-CDIP-T48		5.5 V	4.826 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3				.0015 Amp	60.96 mm	35 ns
7130LA100LGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class Q	NO LEAD	PARALLEL	ASYNCHRONOUS	140 mA	1024 words		5		8	CHIP CARRIER			1.27 mm	125 Cel		1KX8	1K		-55 Cel		QUAD		S-XQCC-N48		5.5 V		14.3002 mm		8192 bit	4.5 V							14.3002 mm	100 ns
IDT7140LA25FGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QFF	SQUARE	CERAMIC	YES		CMOS		FLAT	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	85 Cel	3-STATE	1KX8	1K	2 V	-40 Cel	MATTE TIN	QUAD	2	S-XQFP-F48					Not Qualified	8192 bit			e3				.004 Amp		25 ns
7130LA100LG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	110 mA	1024 words		5		8	CHIP CARRIER			1.27 mm	70 Cel		1KX8	1K		0 Cel		QUAD		S-XQCC-N48		5.5 V		14.3002 mm		8192 bit	4.5 V							14.3002 mm	100 ns
UPD442002F1-BB70X-BC2-A	Renesas Electronics	STANDARD SRAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON		3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1 V	-25 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.19 mm	6 mm	Not Qualified	2097152 bit	2.7 V						.000002 Amp	8 mm	70 ns
7132LA100PDG8	Renesas Electronics	MULTI-PORT SRAM		48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	2048 words	COMMON	5		8	IN-LINE	DIP48,.6		2.54 mm	70 Cel		2KX8	2K	2 V	0 Cel		DUAL	2	R-PDIP-T48		5.5 V	3.8 mm	15.24 mm		16384 bit	4.5 V					YES	.07 Amp	61.7 mm	100 ns
7130SA55FGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	QFL48,.75SQ	SRAMs	1.27 mm	85 Cel	3-STATE	1KX8	1K	4.5 V	-40 Cel	MATTE TIN	QUAD	2	S-CQCC-N48	1	5.5 V		14.3002 mm	Not Qualified	8192 bit	4.5 V		e3				.03 Amp	14.3002 mm	55 ns
IDT71V416S15BEGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	170 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B48	3	3.6 V			Not Qualified	4194304 bit	3 V		e1	40	260		.02 Amp		15 ns
71V416S12BE	Renesas Electronics	STANDARD SRAM	COMMERCIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	180 mA	262144 words		3.3		16	GRID ARRAY			.75 mm	70 Cel		256KX16	256K		0 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	4	3.6 V				4194304 bit	3 V		e0	30	225				12 ns
7134SA70CG8	Renesas Electronics	STANDARD SRAM		48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5		8	IN-LINE	DIP48(UNSPEC)			70 Cel		4KX8	4K	2 V	0 Cel		DUAL	2	R-CDIP-T48		5.5 V				32768 bit	4.5 V					YES	.15 Amp		70 ns
IDT7134SA45FGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	280 mA	4096 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	125 Cel	3-STATE	4KX8	4K	4.5 V	-55 Cel	MATTE TIN	QUAD	2	S-CQFP-F48		5.5 V	2.7432 mm		Not Qualified	32768 bit	4.5 V	AUTOMATIC POWER-DOWN	e3				.03 Amp		45 ns
IDT7130SA25L48I	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	280 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	85 Cel	3-STATE	1KX8	1K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-CQCC-N48		5.5 V	3.048 mm	14.3002 mm	Not Qualified	8192 bit	4.5 V		e0				.015 Amp	14.3002 mm	25 ns
IDT7140SA25L488	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-XQCC-N48					Not Qualified	8192 bit			e0				.015 Amp		25 ns
IDT7134LA70F8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QFF	SQUARE	CERAMIC	YES		CMOS		FLAT	PARALLEL	ASYNCHRONOUS	200 mA	4096 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-XQFP-F48					Not Qualified	32768 bit			e0				.0015 Amp		70 ns
UPD444010AGY-B55X-MJH	Renesas Electronics	STANDARD SRAM	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	COMMON		3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20	SRAMs	.5 mm	85 Cel	3-STATE	512KX8	512K	1 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	4194304 bit	2.7 V		e0					16.4 mm	55 ns
IDT7140LA35PDGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535 Class Q	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	170 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	MATTE TIN	DUAL	2	R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e3				.004 Amp	61.849 mm	35 ns
7130SA25C	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	0 Cel	TIN LEAD	DUAL	2	R-XDIP-T48					Not Qualified	8192 bit			e0				.015 Amp		25 ns
7132LA100CB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	2	R-CDIP-T48	1	5.5 V	4.826 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN; BATTERY BACKUP	e0	NOT SPECIFIED	240		.004 Amp	60.96 mm	100 ns
IDT7134LA35L48BG	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		4096 words		5		8	CHIP CARRIER			1.02 mm	125 Cel		4KX8	4K		-55 Cel	MATTE TIN	QUAD		S-CQCC-N48		5.5 V	3.048 mm	14.22 mm	Not Qualified	32768 bit	4.5 V	AUTOMATIC POWER-DOWN; BATTERY BACKUP	e3					14.22 mm	35 ns
7130SA25CGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	85 Cel	3-STATE	1KX8	1K	4.5 V	-40 Cel	MATTE TIN	DUAL	2	R-PDIP-T48		5.5 V			Not Qualified	8192 bit	4.5 V		e3				.03 Amp		25 ns
7132SA25FGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	330 mA	2048 words		5		8	FLATPACK				85 Cel		2KX8	2K		-40 Cel	MATTE TIN	QUAD		S-CQFP-F48		5.5 V				16384 bit	4.5 V		e3						25 ns
IDT7134SA35FG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	260 mA	4096 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-CQFP-F48		5.5 V	2.7432 mm		Not Qualified	32768 bit	4.5 V		e3				.015 Amp		35 ns
IDT7142LA35PB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	170 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	DUAL	2	R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	16384 bit	4.5 V		e0				.004 Amp	61.849 mm	35 ns
71V416L12BEG	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	180 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B48	3	3.6 V	1.2 mm	9 mm	Not Qualified	4194304 bit	3 V		e1	40	260		.01 Amp	9 mm	12 ns
HM62A16256CLBPI-7	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		262144 words		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX16	256K		-40 Cel		BOTTOM		S-PBGA-B48		2 V	1.2 mm	6.5 mm	Not Qualified	4194304 bit	1.65 V							6.5 mm	70 ns
M5M5W816WG-55HI#BT	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		524288 words		3		16	GRID ARRAY				85 Cel		512KX16	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48		3.6 V			Not Qualified	8388608 bit	2.7 V		e1						55 ns
7130SA55F8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QFF	SQUARE	CERAMIC	YES		CMOS		FLAT	PARALLEL	ASYNCHRONOUS	155 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-XQFP-F48	1				Not Qualified	8192 bit			e0				.015 Amp		55 ns
7132SA100FG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	155 mA	2048 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-CQFP-F48		5.5 V			Not Qualified	16384 bit	4.5 V		e3				.015 Amp		100 ns
7130LA100LGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class Q	NO LEAD	PARALLEL	ASYNCHRONOUS	140 mA	1024 words		5		8	CHIP CARRIER			1.27 mm	125 Cel		1KX8	1K		-55 Cel		QUAD		S-XQCC-N48		5.5 V		14.3002 mm		8192 bit	4.5 V							14.3002 mm	100 ns
7130LA100L48GB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	MATTE TIN	QUAD	2	S-XQCC-N48		5.5 V		14.3002 mm	Not Qualified	8192 bit	4.5 V		e3				.004 Amp	14.3002 mm	100 ns
IDT7134LA55FI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	220 mA	4096 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	85 Cel	3-STATE	4KX8	4K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-CQFP-F48		5.5 V	2.7432 mm		Not Qualified	32768 bit	4.5 V	BATTERY BACK-UP OPERATION	e0				.004 Amp		55 ns
IDT7132LA25L48	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	170 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	TIN LEAD	QUAD	2	S-CQCC-N48		5.5 V	3.048 mm	14.3002 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN; BATTERY BACKUP	e0				.0015 Amp	14.3002 mm	25 ns
M5M5V416CWG-55HI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.06 mm	7 mm	Not Qualified	4194304 bit	2.7 V						.0000008 Amp	8.5 mm	55 ns
7130LA25PDGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	85 Cel	3-STATE	1KX8	1K	2 V	-40 Cel	MATTE TIN	DUAL	2	R-PDIP-T48					Not Qualified	8192 bit			e3				.004 Amp		25 ns
IDT7130SA35PG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		8	IN-LINE			2.54 mm	70 Cel		1KX8	1K		0 Cel	MATTE TIN	DUAL		R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e3					61.849 mm	35 ns
IDT7132SA55L48	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	155 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-CQCC-N48		5.5 V	3.048 mm	14.3002 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0				.015 Amp	14.3002 mm	55 ns
71V016SA12BFGI8	Renesas Electronics	STANDARD SRAM		48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	160 mA	65536 words	COMMON	3.3		16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		.75 mm	85 Cel	3-STATE	64KX16	64K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B48	3	3.6 V	1.4 mm	7 mm		1048576 bit	3.15 V		e1	40	260	YES	.01 Amp	7 mm	12 ns
IDT7130LA20FG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		1024 words		5		8	FLATPACK			1.27 mm	70 Cel	3-STATE	1KX8	1K	2 V	0 Cel	MATTE TIN	QUAD	2	S-CQFP-F48		5.5 V	2.7432 mm		Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e3			YES			20 ns
IDT7130SA35LB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		1024 words		5		8	CHIP CARRIER			1.016 mm	125 Cel	3-STATE	1KX8	1K		-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48		5.5 V	3.048 mm	14.3002 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG	e0			YES		14.3002 mm	35 ns
IDT7142SA35CGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	230 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	MATTE TIN	DUAL	2	R-CDIP-T48		5.5 V	4.826 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3				.03 Amp	60.96 mm	35 ns
IDT7134LA35L48GB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS	250 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	125 Cel	3-STATE	4KX8	4K	2 V	-55 Cel	MATTE TIN	QUAD	2	S-CQCC-N48		5.5 V	3.048 mm	14.3002 mm	Not Qualified	32768 bit	4.5 V		e3				.004 Amp	14.3002 mm	35 ns
IDT7130LA25PI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	85 Cel	3-STATE	1KX8	1K	2 V	-40 Cel	TIN LEAD	DUAL	2	R-PDIP-T48					Not Qualified	8192 bit			e0				.004 Amp		25 ns
7130LA100L48GI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1 mm	85 Cel	3-STATE	1KX8	1K	2 V	-40 Cel	MATTE TIN	QUAD	2	S-XQCC-N48		5.5 V		14.3002 mm	Not Qualified	8192 bit	4.5 V		e3				.004 Amp	14.3002 mm	100 ns
7134LA70LGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS		4096 words		5		8	CHIP CARRIER				125 Cel		4KX8	4K		-55 Cel		QUAD		S-XQCC-N48		5.5 V				32768 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED				70 ns
UPD448010GY-C70X-MJH	Renesas Electronics	STANDARD SRAM	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	COMMON		2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20	SRAMs	.5 mm	85 Cel	3-STATE	1MX8	1M	1 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	8388608 bit	2.3 V		e0					16.4 mm	70 ns
7130SA35PGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		8	IN-LINE			2.54 mm	125 Cel		1KX8	1K		-55 Cel	MATTE TIN	DUAL		R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e3					61.849 mm	35 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.