48 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
7134SA55PDGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	270 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	85 Cel		3-STATE	4KX8	4K	4.5 V	-40 Cel	MATTE TIN	DUAL	2	R-PDIP-T48		5.5 V			Not Qualified	32768 bit	4.5 V		e3				.03 Amp		55 ns
7134LA20FG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	70 Cel		3-STATE	4KX8	4K	2 V	0 Cel	MATTE TIN	QUAD	2	S-CQFP-F48		5.5 V			Not Qualified	32768 bit	4.5 V		e3				.0015 Amp		20 ns
7130SA55L48I	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QCCN	SQUARE	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1 mm	85 Cel		3-STATE	1KX8	1K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-XQCC-N48					Not Qualified	8192 bit			e0				.03 Amp		55 ns
IDT7130LA100PG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		8	IN-LINE				2.54 mm	70 Cel			1KX8	1K		0 Cel	MATTE TIN	DUAL		R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e3					61.849 mm	100 ns
IDT7140LA55L48G8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	110 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1 mm	70 Cel		3-STATE	1KX8	1K	2 V	0 Cel	MATTE TIN	QUAD	2	S-XQCC-N48					Not Qualified	8192 bit			e3				.0015 Amp		55 ns
IDT7130SA55L48GI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QCCN	SQUARE	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1 mm	85 Cel		3-STATE	1KX8	1K	4.5 V	-40 Cel	MATTE TIN	QUAD	2	S-XQCC-N48					Not Qualified	8192 bit			e3				.03 Amp		55 ns
IDT7132LA55CG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	70 Cel		3-STATE	2KX8	2K	2 V	0 Cel	MATTE TIN	DUAL	2	R-CDIP-T48		5.5 V	4.826 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3				.0015 Amp	60.96 mm	55 ns
IDT7032SA25PB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				2.54 mm	125 Cel			2KX8	2K		-55 Cel	TIN LEAD	DUAL		R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	BATTERY BACK-UP	e0					61.849 mm	25 ns
7130LA55CB	Renesas Electronics	DUAL-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	125 Cel		3-STATE	1KX8	1K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	2	R-CDIP-T48	1	5.5 V	4.826 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e0	NOT SPECIFIED	240		.004 Amp	60.96 mm	55 ns
7130SA25LG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	220 mA	1024 words		5		8	CHIP CARRIER				1.27 mm	70 Cel			1KX8	1K		0 Cel		QUAD		S-XQCC-N48		5.5 V		14.3002 mm		8192 bit	4.5 V							14.3002 mm	25 ns
7134LA45PDGB8	Renesas Electronics	STANDARD SRAM		48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5		8	IN-LINE	DIP48(UNSPEC)				125 Cel			4KX8	4K	2 V	-55 Cel		DUAL	2	R-PDIP-T48		5.5 V				32768 bit	4.5 V					YES	.12 Amp		45 ns
7130SA100PGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		8	IN-LINE				2.54 mm	125 Cel			1KX8	1K		-55 Cel	MATTE TIN	DUAL		R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e3					61.849 mm	100 ns
RMLV3216AGBG-5S2	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		3		16	GRID ARRAY		8			85 Cel			2MX16	2M		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V				33554432 bit	2.7 V								55 ns
IDT7140SA55L48	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	155 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1.016 mm	70 Cel		3-STATE	1KX8	1K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-CQCC-N48		5.5 V	3.048 mm	14.3002 mm	Not Qualified	8192 bit	4.5 V		e0				.015 Amp	14.3002 mm	55 ns
IDT7130SA25L48GB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	230 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1 mm	125 Cel		3-STATE	1KX8	1K	4.5 V	-55 Cel	MATTE TIN	QUAD	2	S-XQCC-N48					Not Qualified	8192 bit			e3				.03 Amp		25 ns
IDT7134LA55L48B	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	220 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1.02 mm	125 Cel		3-STATE	4KX8	4K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48		5.5 V	3.048 mm	14.22 mm	Not Qualified	32768 bit	4.5 V	AUTOMATIC POWER-DOWN; BATTERY BACKUP	e0				.004 Amp	14.22 mm	55 ns
IDT7140LA25PB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	125 Cel		3-STATE	1KX8	1K	2 V	-55 Cel	TIN LEAD	DUAL	2	R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e0				.004 Amp	61.849 mm	25 ns
R1LV1616HBG-5SI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	1MX16	1M	1.5 V	-40 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B48		3.6 V	1.2 mm	7.5 mm	Not Qualified	16777216 bit	2.7 V		e0		240	YES	.0005 Amp	8.5 mm	55 ns
7130SA25FGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	QFL48,.75SQ		SRAMs	1.27 mm	85 Cel		3-STATE	1KX8	1K	4.5 V	-40 Cel	MATTE TIN	QUAD	2	S-CQCC-N48		5.5 V		14.3002 mm	Not Qualified	8192 bit	4.5 V		e3				.03 Amp	14.3002 mm	25 ns
IDT7130LA25PI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	85 Cel		3-STATE	1KX8	1K	2 V	-40 Cel	TIN LEAD	DUAL	2	R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e0				.004 Amp	61.849 mm	25 ns
UPD442012LGY-C12X-MKH	Renesas Electronics	STANDARD SRAM	OTHER	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	3	2.2/3.6	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20		SRAMs	.5 mm	85 Cel	YES	3-STATE	128KX16	128K	1.5 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	2097152 bit	2.2 V		e0				.0000035 Amp	16.4 mm	120 ns
7134SA70L48GB8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	270 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1 mm	70 Cel		3-STATE	4KX8	4K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-XQCC-N48					Not Qualified	32768 bit			e3				.03 Amp		70 ns
7134LA55PDG8	Renesas Electronics	STANDARD SRAM		48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	200 mA	4096 words	COMMON	5		8	IN-LINE	DIP48(UNSPEC)				70 Cel			4KX8	4K	2 V	0 Cel		DUAL	2	R-PDIP-T48		5.5 V				32768 bit	4.5 V					YES	.1 Amp		55 ns
IDT7134SA55LB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		4096 words		5		8	CHIP CARRIER				1.016 mm	125 Cel		3-STATE	4KX8	4K		-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48		5.5 V	3.048 mm	14.3002 mm	Not Qualified	32768 bit	4.5 V		e0			YES		14.3002 mm	55 ns
IDT70104SC	Renesas Electronics	MULTI-PORT SRAM		48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		9	IN-LINE				2.54 mm				1KX9	1K			TIN LEAD	DUAL		R-CDIP-T48		5.5 V	4.826 mm	15.24 mm	Not Qualified	9216 bit	4.5 V		e0					60.96 mm
IDT7132SA35CGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	230 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	125 Cel		3-STATE	2KX8	2K	4.5 V	-55 Cel	MATTE TIN	DUAL	2	R-CDIP-T48		5.5 V	4.826 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3				.03 Amp	60.96 mm	35 ns
7134LA55L48I8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	220 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1 mm	70 Cel		3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-XQCC-N48					Not Qualified	32768 bit			e0				.004 Amp		55 ns
7134SA25LGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		4096 words		5		8	CHIP CARRIER					85 Cel			4KX8	4K		-40 Cel		QUAD		S-XQCC-N48		5.5 V				32768 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED				25 ns
7132SA100FG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	155 mA	2048 words		5		8	FLATPACK					70 Cel			2KX8	2K		0 Cel	MATTE TIN	QUAD		S-CQFP-F48		5.5 V				16384 bit	4.5 V		e3						100 ns
7134SA70CGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	270 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	125 Cel		3-STATE	4KX8	4K	4.5 V	-55 Cel	MATTE TIN	DUAL	2	R-CDIP-T48		5.5 V			Not Qualified	32768 bit	4.5 V		e3				.03 Amp		70 ns
IDT7142SA35PGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	230 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	125 Cel		3-STATE	2KX8	2K	4.5 V	-55 Cel	MATTE TIN	DUAL	2	R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3				.03 Amp	61.849 mm	35 ns
7130LA100LGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	140 mA	1024 words		5		8	CHIP CARRIER				1.27 mm	85 Cel			1KX8	1K		-40 Cel		QUAD		S-XQCC-N48		5.5 V		14.3002 mm		8192 bit	4.5 V							14.3002 mm	100 ns
IDT7142LA100CGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	125 Cel		3-STATE	2KX8	2K	2 V	-55 Cel	MATTE TIN	DUAL	2	R-CDIP-T48		5.5 V	4.826 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3				.004 Amp	60.96 mm	100 ns
UPD442012AGY-DD10X-MJH-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL EXTENDED	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	2	2	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20		SRAMs	.5 mm	85 Cel		3-STATE	128KX16	128K	1 V	-25 Cel	TIN BISMUTH	DUAL		R-PDSO-G48		2.2 V	1.2 mm	12 mm	Not Qualified	2097152 bit	1.8 V		e6					18 mm	100 ns
IDT7140SA35FB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	230 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	125 Cel		3-STATE	1KX8	1K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F48	1				Not Qualified	8192 bit			e0				.03 Amp		35 ns
IDT7142SA25FG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	220 mA	2048 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	70 Cel		3-STATE	2KX8	2K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-CQFP-F48		5.5 V	2.7432 mm		Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3				.015 Amp		25 ns
IDT7140LA25PGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		8	IN-LINE				2.54 mm	125 Cel			1KX8	1K		-55 Cel	MATTE TIN	DUAL		R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e3					61.849 mm	25 ns
IDT7030LA35PB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		8	IN-LINE				2.54 mm	125 Cel			1KX8	1K		-55 Cel	TIN LEAD	DUAL		R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	8192 bit	4.5 V	BATTERY BACK-UP	e0					61.849 mm	35 ns
IDT7142LA25FGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	220 mA	2048 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	85 Cel		3-STATE	2KX8	2K	2 V	-40 Cel	MATTE TIN	QUAD	2	S-CQFP-F48		5.5 V	2.7432 mm		Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3				.004 Amp		25 ns
7130SA100FGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class Q	NO LEAD	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	QFL48,.75SQ		SRAMs	1.27 mm	125 Cel		3-STATE	1KX8	1K	4.5 V	-55 Cel	MATTE TIN	QUAD	2	S-CQCC-N48		5.5 V		14.3002 mm	Not Qualified	8192 bit	4.5 V		e3				.03 Amp	14.3002 mm	100 ns
IDT7140SA25CB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	280 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	125 Cel		3-STATE	1KX8	1K	4.5 V	-55 Cel	TIN LEAD	DUAL	2	R-CDIP-T48		5.5 V	4.826 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e0				.03 Amp	60.96 mm	25 ns
IDT7130LA25FI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	85 Cel		3-STATE	1KX8	1K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-CQFP-F48		5.5 V	2.7432 mm		Not Qualified	8192 bit	4.5 V		e0				.004 Amp		25 ns
IDT7130SA100FGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QFF	SQUARE	CERAMIC	YES		CMOS		FLAT	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	85 Cel		3-STATE	1KX8	1K	4.5 V	-40 Cel	MATTE TIN	QUAD	2	S-XQFP-F48					Not Qualified	8192 bit			e3				.03 Amp		100 ns
IDT7130LA55FB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	125 Cel		3-STATE	1KX8	1K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-CQFP-F48		5.5 V	2.7432 mm		Not Qualified	8192 bit	4.5 V		e0				.004 Amp		55 ns
IDT7130SA35L48G	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	165 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1.016 mm	70 Cel		3-STATE	1KX8	1K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-XQCC-N48		5.5 V	3.048 mm	14.3002 mm	Not Qualified	8192 bit	4.5 V		e3				.015 Amp	14.3002 mm	35 ns
IDT7130LA55FI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	85 Cel		3-STATE	1KX8	1K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-CQFP-F48		5.5 V	2.7432 mm		Not Qualified	8192 bit	4.5 V		e0				.004 Amp		55 ns
IDT7140SA35PDG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	165 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	70 Cel		3-STATE	1KX8	1K	4.5 V	0 Cel	MATTE TIN	DUAL	2	R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e3				.03 Amp	61.849 mm	35 ns
IDT71V016SA15BFI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	64KX16	64K	3.15 V	-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B48	3	3.6 V	1.34 mm	7 mm	Not Qualified	1048576 bit	3 V		e0	30	225		.01 Amp	7 mm	15 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.