48 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IDT7132SA100FGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	190 mA	2048 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	MATTE TIN	QUAD	2	S-CQFP-F48		5.5 V	2.7432 mm		Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3				.03 Amp		100 ns
IDT7134LA55F8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QFF	SQUARE	CERAMIC	YES		CMOS		FLAT	PARALLEL	ASYNCHRONOUS	200 mA	4096 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-XQFP-F48					Not Qualified	32768 bit			e0				.0015 Amp		55 ns
IDT7130SA55PDG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	155 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	0 Cel	MATTE TIN	DUAL	2	R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e3				.015 Amp	61.849 mm	55 ns
RMWV6416AGSA-5S2	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		4194304 words		3		16	SMALL OUTLINE, THIN PROFILE		8			85 Cel		4MX16	4M		-40 Cel		DUAL		R-PDSO-G48		3.6 V				67108864 bit	2.7 V								55 ns
IDT71L016L100BF	Renesas Electronics	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	3	3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	1.5 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B48	3				Not Qualified	1048576 bit			e0	30	225		.000005 Amp		100 ns
7130SA100L488	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	155 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-XQCC-N48					Not Qualified	8192 bit			e0				.015 Amp		100 ns
7130LA35FB	Renesas Electronics	DUAL-PORT SRAM	MILITARY	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	170 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	2	S-CQFP-F48	1	5.5 V	2.7432 mm		Not Qualified	8192 bit	4.5 V		e0	NOT SPECIFIED	240		.004 Amp		35 ns
7130SA25L48I8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QCCN	SQUARE	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1 mm	85 Cel	3-STATE	1KX8	1K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-XQCC-N48					Not Qualified	8192 bit			e0				.03 Amp		25 ns
IDT7130SA100FB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-CQFP-F48		5.5 V	2.7432 mm		Not Qualified	8192 bit	4.5 V		e0				.03 Amp		100 ns
IDT7130LA100PDGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	85 Cel	3-STATE	1KX8	1K	2 V	-40 Cel	MATTE TIN	DUAL	2	R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e3				.004 Amp	61.849 mm	100 ns
IDT71V016SA20BFG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	140 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	3 V	0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B48	3	3.6 V	1.34 mm	7 mm	Not Qualified	1048576 bit	3 V		e1	40	260		.01 Amp	7 mm	20 ns
7132SA55L48G8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	285 mA	2048 words		5		8	CHIP CARRIER				1.27 mm	70 Cel		2KX8	2K		0 Cel	MATTE TIN	QUAD		S-XQCC-N48		5.5 V		14.3002 mm		16384 bit	4.5 V		e3					14.3002 mm	55 ns
7134LA55PDGB8	Renesas Electronics	STANDARD SRAM		48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	4096 words	COMMON	5		8	IN-LINE	DIP48(UNSPEC)				125 Cel		4KX8	4K	2 V	-55 Cel		DUAL	2	R-PDIP-T48		5.5 V				32768 bit	4.5 V					YES	.12 Amp		55 ns
IDT7134SA25PDGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	310 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	125 Cel	3-STATE	4KX8	4K	4.5 V	-55 Cel	MATTE TIN	DUAL	2	R-PDIP-T48					Not Qualified	32768 bit			e3				.03 Amp		25 ns
7130SA100PDG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	155 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	0 Cel	MATTE TIN	DUAL	2	R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e3				.015 Amp	61.849 mm	100 ns
7134LA70FGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	220 mA	4096 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	125 Cel	3-STATE	4KX8	4K	2 V	-55 Cel	MATTE TIN	QUAD	2	S-CQFP-F48		5.5 V			Not Qualified	32768 bit	4.5 V		e3				.004 Amp		70 ns
IDT7140SA25L48GB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class Q	NO LEAD	PARALLEL	ASYNCHRONOUS	280 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1.016 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	MATTE TIN	QUAD	2	S-XQCC-N48		5.5 V	3.048 mm	14.3002 mm	Not Qualified	8192 bit	4.5 V		e3				.03 Amp	14.3002 mm	25 ns
7134SA25L48G	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	280 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1 mm	70 Cel	3-STATE	4KX8	4K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-CQCC-N48		5.5 V			Not Qualified	32768 bit	4.5 V		e3				.015 Amp		25 ns
IDT7132SA100L48G	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	155 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1.016 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-CQCC-N48		5.5 V	3.048 mm	14.3002 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3				.015 Amp	14.3002 mm	100 ns
IDT7132LA35L48GB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS	170 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1.016 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	MATTE TIN	QUAD	2	S-CQCC-N48		5.5 V	3.048 mm	14.3002 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3				.004 Amp	14.3002 mm	35 ns
IDT7130LA25P	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	170 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	70 Cel	3-STATE	1KX8	1K	2 V	0 Cel	TIN LEAD	DUAL	2	R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e0				.0015 Amp	61.849 mm	25 ns
7130SA25CI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	85 Cel	3-STATE	1KX8	1K	4.5 V	-40 Cel	TIN LEAD	DUAL	2	R-XDIP-T48					Not Qualified	8192 bit			e0				.03 Amp		25 ns
7132LA35L48	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	TIN LEAD	QUAD	2	S-CQCC-N48		5.5 V		14.3002 mm	Not Qualified	16384 bit	4.5 V		e0				.0015 Amp	14.3002 mm	35 ns
IDT71V416L12BE	Renesas Electronics	STANDARD SRAM	COMMERCIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	170 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	3 V	0 Cel	TIN LEAD	BOTTOM		S-PBGA-B48	4	3.6 V	1.2 mm	9 mm	Not Qualified	4194304 bit	3 V		e0	30	225		.01 Amp	9 mm	12 ns
IDT7140SA25CGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	280 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	85 Cel	3-STATE	1KX8	1K	4.5 V	-40 Cel	MATTE TIN	DUAL	2	R-XDIP-T48					Not Qualified	8192 bit			e3				.03 Amp		25 ns
IDT7130SA35FG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QFF	SQUARE	CERAMIC	YES		CMOS		FLAT	PARALLEL	ASYNCHRONOUS	165 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-XQFP-F48					Not Qualified	8192 bit			e3				.015 Amp		35 ns
7134SA55PDGI8	Renesas Electronics	STANDARD SRAM		48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	270 mA	4096 words	COMMON	5		8	IN-LINE	DIP48(UNSPEC)				85 Cel		4KX8	4K	2 V	-40 Cel		DUAL	2	R-PDIP-T48		5.5 V				32768 bit	4.5 V					YES	.17 Amp		55 ns
7134LA35FGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	250 mA	4096 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	125 Cel	3-STATE	4KX8	4K	2 V	-55 Cel	MATTE TIN	QUAD	2	S-CQFP-F48		5.5 V			Not Qualified	32768 bit	4.5 V		e3				.004 Amp		35 ns
7134LA70F8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QFF	SQUARE	CERAMIC	YES		CMOS		FLAT	PARALLEL	ASYNCHRONOUS	200 mA	4096 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-XQFP-F48					Not Qualified	32768 bit			e0				.0015 Amp		70 ns
7130SA100C	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	155 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	2	R-CDIP-T48	1	5.5 V	4.826 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e0	NOT SPECIFIED	240		.015 Amp	60.96 mm	100 ns
R1LV0416CBG-5SI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		262144 words		2.5		16	GRID ARRAY					85 Cel		256KX16	256K		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V			Not Qualified	4194304 bit	2.2 V	IT CAN ALSO OPERATE AT 3V							55 ns
IDT7134LA25CG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	MATTE TIN	DUAL	2	R-CDIP-T48		5.5 V	4.826 mm	15.24 mm	Not Qualified	32768 bit	4.5 V		e3				.0015 Amp	60.96 mm	25 ns
IDT7140LA55FB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F48	1				Not Qualified	8192 bit			e0				.004 Amp		55 ns
IDT7130LA55CGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535 Class Q	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	MATTE TIN	DUAL	2	R-CDIP-T48		5.5 V	4.826 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e3				.004 Amp	60.96 mm	55 ns
IDT7130LA100FGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QFF	SQUARE	CERAMIC	YES		CMOS		FLAT	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	85 Cel	3-STATE	1KX8	1K	2 V	-40 Cel	MATTE TIN	QUAD	2	S-XQFP-F48					Not Qualified	8192 bit			e3				.004 Amp		100 ns
IDT7140LA25FB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F48	1				Not Qualified	8192 bit			e0				.004 Amp		25 ns
UPD448010GY-B55X-MJH	Renesas Electronics	STANDARD SRAM	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	COMMON		3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20		SRAMs	.5 mm	85 Cel	3-STATE	1MX8	1M	1 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	8388608 bit	2.7 V		e0					16.4 mm	55 ns
UPD444012AGY-C10X-MJH	Renesas Electronics	STANDARD SRAM	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20		SRAMs	.5 mm	85 Cel	3-STATE	256KX16	256K	1 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	4194304 bit	2.2 V		e0					18 mm	100 ns
IDT7130SA55FG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	155 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-CQFP-F48		5.5 V	2.7432 mm		Not Qualified	8192 bit	4.5 V		e3				.015 Amp		55 ns
IDT7134SA55FGI8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QFF	SQUARE	CERAMIC	YES		CMOS		FLAT	PARALLEL	ASYNCHRONOUS	270 mA	4096 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-XQFP-F48					Not Qualified	32768 bit			e3				.03 Amp		55 ns
7134SA45L48GB8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	280 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1 mm	70 Cel	3-STATE	4KX8	4K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-XQCC-N48					Not Qualified	32768 bit			e3				.03 Amp		45 ns
UPD444010LGY-B70X-MJH	Renesas Electronics	STANDARD SRAM	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	524288 words	COMMON		3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20		SRAMs	.5 mm	85 Cel	3-STATE	512KX8	512K	2 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G48					Not Qualified	4194304 bit			e0				.000007 Amp		70 ns
7134SA55FG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-CQFP-F48		5.5 V			Not Qualified	32768 bit	4.5 V		e3				.015 Amp		55 ns
IDT7132LA35L48	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1.016 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	TIN LEAD	QUAD	2	S-CQCC-N48		5.5 V	3.048 mm	14.3002 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN; BATTERY BACKUP	e0				.0015 Amp	14.3002 mm	35 ns
7132LA55CG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	MATTE TIN	DUAL	2	R-PDIP-T48		5.5 V	4.826 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3				.0015 Amp	60.96 mm	55 ns
7134LA45PDGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	125 Cel	3-STATE	4KX8	4K	2 V	-55 Cel	MATTE TIN	DUAL	2	R-PDIP-T48		5.5 V			Not Qualified	32768 bit	4.5 V		e3				.004 Amp		45 ns
7130SA100PDGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	85 Cel	3-STATE	1KX8	1K	4.5 V	-40 Cel	MATTE TIN	DUAL	2	R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e3				.03 Amp	61.849 mm	100 ns
7134LA45FG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	200 mA	4096 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	MATTE TIN	QUAD	2	S-CQFP-F48		5.5 V			Not Qualified	32768 bit	4.5 V		e3				.0015 Amp		45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.