48 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
7130SA55FI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QFF	SQUARE	CERAMIC	YES		CMOS		FLAT	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	85 Cel		3-STATE	1KX8	1K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-XQFP-F48	1				Not Qualified	8192 bit			e0				.03 Amp		55 ns
71V016SA15BFG8	Renesas Electronics	STANDARD SRAM		48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	3.3		16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	70 Cel		3-STATE	64KX16	64K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B48	3	3.6 V	1.4 mm	7 mm		1048576 bit	3.15 V		e1	40	260	YES	.01 Amp	7 mm	15 ns
IDT7130SA100PB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	125 Cel		3-STATE	1KX8	1K	4.5 V	-55 Cel	TIN LEAD	DUAL	2	R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e0				.015 Amp	61.849 mm	100 ns
IDT7140LA55L48B	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1.016 mm	125 Cel		3-STATE	1KX8	1K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48		5.5 V	3.048 mm	14.3002 mm	Not Qualified	8192 bit	4.5 V		e0				.004 Amp	14.3002 mm	55 ns
IDT7140SA100L48I8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QCCN	SQUARE	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1 mm	85 Cel		3-STATE	1KX8	1K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-XQCC-N48					Not Qualified	8192 bit			e0				.03 Amp		100 ns
7134LA20F	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QFF	SQUARE	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	70 Cel		3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-XQFP-F48					Not Qualified	32768 bit			e0				.0015 Amp		20 ns
7134LA45L48G	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	200 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1 mm	70 Cel		3-STATE	4KX8	4K	2 V	0 Cel	MATTE TIN	QUAD	2	S-CQCC-N48		5.5 V			Not Qualified	32768 bit	4.5 V		e3				.0015 Amp		45 ns
7130LA25CGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535 Class Q	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	125 Cel		3-STATE	1KX8	1K	2 V	-55 Cel	MATTE TIN	DUAL	2	R-PDIP-T48		5.5 V			Not Qualified	8192 bit	4.5 V		e3				.004 Amp		25 ns
IDT7134LA25PDGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	260 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	125 Cel		3-STATE	4KX8	4K	2 V	-55 Cel	MATTE TIN	DUAL	2	R-PDIP-T48					Not Qualified	32768 bit			e3				.004 Amp		25 ns
7130LA25LGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	220 mA	1024 words		5		8	CHIP CARRIER				1.27 mm	85 Cel			1KX8	1K		-40 Cel		QUAD		S-XQCC-N48		5.5 V		14.3002 mm		8192 bit	4.5 V							14.3002 mm	25 ns
7134SA55L48I8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	270 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1 mm	70 Cel		3-STATE	4KX8	4K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-XQCC-N48					Not Qualified	32768 bit			e0				.03 Amp		55 ns
7130SA25FB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	280 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	125 Cel		3-STATE	1KX8	1K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F48					Not Qualified	8192 bit			e0				.03 Amp		25 ns
IDT7134SA70CGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	270 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	125 Cel		3-STATE	4KX8	4K	4.5 V	-55 Cel	MATTE TIN	DUAL	2	R-CDIP-T48		5.5 V	4.826 mm	15.24 mm	Not Qualified	32768 bit	4.5 V		e3				.03 Amp	60.96 mm	70 ns
7130LA35L48G8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1 mm	70 Cel		3-STATE	1KX8	1K	2 V	0 Cel	MATTE TIN	QUAD	2	S-XQCC-N48		5.5 V		14.3002 mm	Not Qualified	8192 bit	4.5 V		e3				.0015 Amp	14.3002 mm	35 ns
7134LA70CGB8	Renesas Electronics	STANDARD SRAM		48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	4096 words	COMMON	5		8	IN-LINE	DIP48(UNSPEC)				125 Cel			4KX8	4K	2 V	-55 Cel		DUAL	2	R-CDIP-T48		5.5 V				32768 bit	4.5 V					YES	.12 Amp		70 ns
7134SA45LG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		4096 words		5		8	CHIP CARRIER					70 Cel			4KX8	4K		0 Cel		QUAD		S-XQCC-N48		5.5 V				32768 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED				45 ns
7134SA20FG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	280 mA	4096 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	70 Cel		3-STATE	4KX8	4K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-CQFP-F48		5.5 V			Not Qualified	32768 bit	4.5 V		e3				.015 Amp		20 ns
IDT7140LA25PDGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	125 Cel		3-STATE	1KX8	1K	2 V	-55 Cel	MATTE TIN	DUAL	2	R-PDIP-T48					Not Qualified	8192 bit			e3				.004 Amp		25 ns
7134SA70L488	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1 mm	70 Cel		3-STATE	4KX8	4K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-XQCC-N48					Not Qualified	32768 bit			e0				.015 Amp		70 ns
UPD444010AGY-D12X-MJH	Renesas Electronics	STANDARD SRAM	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	524288 words	COMMON		2/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20		SRAMs	.5 mm	85 Cel		3-STATE	512KX8	512K	1 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	4194304 bit	1.8 V		e0					16.4 mm	120 ns
71V016SA12BFGI	Renesas Electronics	STANDARD SRAM		48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	160 mA	65536 words	COMMON	3.3		16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel		3-STATE	64KX16	64K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B48	3	3.6 V	1.4 mm	7 mm		1048576 bit	3.15 V		e1	40	260	YES	.01 Amp	7 mm	12 ns
7134LA25PDG8	Renesas Electronics	STANDARD SRAM		48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	4096 words	COMMON	5		8	IN-LINE	DIP48(UNSPEC)				70 Cel			4KX8	4K	2 V	0 Cel		DUAL	2	R-PDIP-T48		5.5 V				32768 bit	4.5 V					YES	.12 Amp		25 ns
R1LV3216RSA-7SI#B0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	2097152 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	SRAMs	.5 mm	85 Cel		3-STATE	2MX16	2M	2 V	-40 Cel		DUAL		R-PDSO-G48	2				Not Qualified	33554432 bit					260		.000012 Amp		70 ns
7130SA25FI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QFF	SQUARE	CERAMIC	YES		CMOS		FLAT	PARALLEL	ASYNCHRONOUS	280 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	85 Cel		3-STATE	1KX8	1K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-XQFP-F48					Not Qualified	8192 bit			e0				.015 Amp		25 ns
IDT7140LA100FG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	110 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	70 Cel		3-STATE	1KX8	1K	2 V	0 Cel	MATTE TIN	QUAD	2	S-CQFP-F48		5.5 V	2.7432 mm		Not Qualified	8192 bit	4.5 V		e3				.0015 Amp		100 ns
IDT7140LA25L	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		1024 words		5		8	CHIP CARRIER				1.016 mm	70 Cel		3-STATE	1KX8	1K	2 V	0 Cel	TIN LEAD	QUAD	2	S-CQCC-N48		5.5 V	3.048 mm	14.3002 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG	e0			YES		14.3002 mm	25 ns
UPD444012AGY-C85X-MJH-A	Renesas Electronics	STANDARD SRAM	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20		SRAMs	.5 mm	85 Cel		3-STATE	256KX16	256K	1 V	-25 Cel	TIN BISMUTH	DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	4194304 bit	2.2 V		e6					18 mm	85 ns
7132SA55C	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	155 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	70 Cel		3-STATE	2KX8	2K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	2	R-CDIP-T48	1	5.5 V	4.826 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0	NOT SPECIFIED	240		.015 Amp	60.96 mm	55 ns
HM62V16100LBPI-4	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.75 mm	85 Cel			1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm	8 mm	Not Qualified	16777216 bit	2.7 V							9.5 mm	45 ns
7134LA55PDG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	200 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	70 Cel		3-STATE	4KX8	4K	2 V	0 Cel	MATTE TIN	DUAL	2	R-PDIP-T48		5.5 V			Not Qualified	32768 bit	4.5 V		e3				.0015 Amp		55 ns
7134SA35CG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	260 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	70 Cel		3-STATE	4KX8	4K	4.5 V	0 Cel	MATTE TIN	DUAL	2	R-CDIP-T48		5.5 V			Not Qualified	32768 bit	4.5 V		e3				.015 Amp		35 ns
7134LA70FG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	200 mA	4096 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	70 Cel		3-STATE	4KX8	4K	2 V	0 Cel	MATTE TIN	QUAD	2	S-CQFP-F48		5.5 V			Not Qualified	32768 bit	4.5 V		e3				.0015 Amp		70 ns
IDT7134LA20FG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	70 Cel		3-STATE	4KX8	4K	2 V	0 Cel	MATTE TIN	QUAD	2	S-CQFP-F48		5.5 V	2.7432 mm		Not Qualified	32768 bit	4.5 V	AUTOMATIC POWER-DOWN; BATTERY BACKUP	e3				.0015 Amp		20 ns
IDT7142SA100L48	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	155 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1.016 mm	70 Cel		3-STATE	2KX8	2K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-CQCC-N48		5.5 V	3.048 mm	14.3002 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0				.015 Amp	14.3002 mm	100 ns
UPD444010LGY-D15X-MKH	Renesas Electronics	STANDARD SRAM	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	524288 words	COMMON		2/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20		SRAMs	.5 mm	85 Cel	YES	3-STATE	512KX8	512K	1.5 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G48					Not Qualified	4194304 bit			e0				.000005 Amp		150 ns
UPD442002F9-BB70X-BC1	Renesas Electronics	STANDARD SRAM	OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	128KX16	128K	2.7 V	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48					Not Qualified	2097152 bit			e0				.000004 Amp		70 ns
7130SA25L48I	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QCCN	SQUARE	PLASTIC/EPOXY	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	280 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1 mm	85 Cel		3-STATE	1KX8	1K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-N48					Not Qualified	8192 bit			e0				.015 Amp		25 ns
7130LA25CGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	DIP	RECTANGULAR	CERAMIC	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	85 Cel		3-STATE	1KX8	1K	2 V	-40 Cel	MATTE TIN	DUAL	2	R-XDIP-T48					Not Qualified	8192 bit			e3				.004 Amp		25 ns
IDT7132SA35C	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	165 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	70 Cel		3-STATE	2KX8	2K	4.5 V	0 Cel	TIN LEAD	DUAL	2	R-CDIP-T48		5.5 V	4.826 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0				.015 Amp	60.96 mm	35 ns
IDT7140SA35FGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	230 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	125 Cel		3-STATE	1KX8	1K	4.5 V	-55 Cel	MATTE TIN	QUAD	2	S-XQFP-F48					Not Qualified	8192 bit			e3				.03 Amp		35 ns
IDT7140SA55L48I8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QCCN	SQUARE	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1 mm	85 Cel		3-STATE	1KX8	1K	4.5 V	-40 Cel	TIN LEAD	QUAD	2	S-XQCC-N48					Not Qualified	8192 bit			e0				.03 Amp		55 ns
7134SA70PDGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	270 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	125 Cel		3-STATE	4KX8	4K	4.5 V	-55 Cel	MATTE TIN	DUAL	2	R-PDIP-T48		5.5 V			Not Qualified	32768 bit	4.5 V		e3				.03 Amp		70 ns
IDT7134LA55CGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	85 Cel		3-STATE	4KX8	4K	2 V	-40 Cel	MATTE TIN	DUAL	2	R-CDIP-T48		5.5 V	4.826 mm	15.24 mm	Not Qualified	32768 bit	4.5 V	BATTERY BACK-UP OPERATION	e3				.004 Amp	60.96 mm	55 ns
7130SA35LG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	165 mA	1024 words		5		8	CHIP CARRIER				1.27 mm	70 Cel			1KX8	1K		0 Cel		QUAD		S-XQCC-N48		5.5 V		14.3002 mm		8192 bit	4.5 V							14.3002 mm	35 ns
7134SA20FG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	280 mA	4096 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	70 Cel		3-STATE	4KX8	4K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-CQFP-F48		5.5 V			Not Qualified	32768 bit	4.5 V		e3				.015 Amp		20 ns
7134LA55FI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QFF	SQUARE	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	220 mA	4096 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	85 Cel		3-STATE	4KX8	4K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-XQFP-F48					Not Qualified	32768 bit			e0				.004 Amp		55 ns
IDT7142LA35FB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	170 mA	2048 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ		SRAMs	1.27 mm	125 Cel		3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-CQFP-F48		5.5 V	2.7432 mm		Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN; BATTERY BACKUP	e0				.004 Amp		35 ns
IDT7130SA55L48GB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40		SRAMs	1 mm	125 Cel		3-STATE	1KX8	1K	4.5 V	-55 Cel	MATTE TIN	QUAD	2	S-XQCC-N48					Not Qualified	8192 bit			e3				.03 Amp		55 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.