48 SRAM 2,400+

Reset All
Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

7134SA35L48G8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

48

QCCN

SQUARE

CERAMIC

YES

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

260 mA

4096 words

COMMON

5

5

8

CHIP CARRIER

LCC48,.56SQ,40

SRAMs

1 mm

70 Cel

3-STATE

4KX8

4K

4.5 V

0 Cel

MATTE TIN

QUAD

2

S-XQCC-N48

Not Qualified

32768 bit

e3

.015 Amp

35 ns

7130LA25FI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

48

QFF

SQUARE

CERAMIC

YES

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

220 mA

1024 words

COMMON

5

5

8

FLATPACK

QFL48,.75SQ

SRAMs

1.27 mm

85 Cel

3-STATE

1KX8

1K

2 V

-40 Cel

TIN LEAD

QUAD

2

S-XQFP-F48

Not Qualified

8192 bit

e0

.004 Amp

25 ns

7130SA35FB8

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

QFF

SQUARE

CERAMIC

YES

CMOS

38535Q/M;38534H;883B

FLAT

PARALLEL

ASYNCHRONOUS

230 mA

1024 words

COMMON

5

5

8

FLATPACK

QFL48,.75SQ

SRAMs

1.27 mm

125 Cel

3-STATE

1KX8

1K

4.5 V

-55 Cel

TIN LEAD

QUAD

2

S-XQFP-F48

1

Not Qualified

8192 bit

e0

.03 Amp

35 ns

IDT71V016SA15BF

Renesas Electronics

STANDARD SRAM

COMMERCIAL

48

LFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

130 mA

65536 words

COMMON

3.3

3.3

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

70 Cel

3-STATE

64KX16

64K

3.15 V

0 Cel

TIN LEAD

BOTTOM

S-PBGA-B48

3

3.6 V

1.34 mm

7 mm

Not Qualified

1048576 bit

3 V

e0

30

225

.01 Amp

7 mm

15 ns

UPD444012AGY-C85X-MJH

Renesas Electronics

STANDARD SRAM

OTHER

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

262144 words

COMMON

3

2.5/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.71,20

SRAMs

.5 mm

85 Cel

3-STATE

256KX16

256K

1 V

-25 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

4194304 bit

2.2 V

e0

18 mm

85 ns

7134LA45LG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

48

QCCN

SQUARE

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

4096 words

5

8

CHIP CARRIER

70 Cel

4KX8

4K

0 Cel

QUAD

S-XQCC-N48

5.5 V

32768 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

45 ns

IDT7140SA25L48

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

48

QCCN

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

220 mA

1024 words

COMMON

5

5

8

CHIP CARRIER

LCC48,.56SQ,40

SRAMs

1.016 mm

70 Cel

3-STATE

1KX8

1K

4.5 V

0 Cel

TIN LEAD

QUAD

2

S-CQCC-N48

5.5 V

3.048 mm

14.3002 mm

Not Qualified

8192 bit

4.5 V

e0

.015 Amp

14.3002 mm

25 ns

IDT7134SA70L488

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

48

QCCN

SQUARE

CERAMIC

YES

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

240 mA

4096 words

COMMON

5

5

8

CHIP CARRIER

LCC48,.56SQ,40

SRAMs

1 mm

70 Cel

3-STATE

4KX8

4K

4.5 V

0 Cel

TIN LEAD

QUAD

2

S-XQCC-N48

Not Qualified

32768 bit

e0

.015 Amp

70 ns

7134LA20F8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

48

QFF

SQUARE

CERAMIC

YES

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

240 mA

4096 words

COMMON

5

5

8

FLATPACK

QFL48,.75SQ

SRAMs

1.27 mm

70 Cel

3-STATE

4KX8

4K

2 V

0 Cel

TIN LEAD

QUAD

2

S-XQFP-F48

Not Qualified

32768 bit

e0

.0015 Amp

20 ns

7130LA55L48G

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

48

QCCN

SQUARE

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

110 mA

1024 words

COMMON

5

5

8

CHIP CARRIER

LCC48,.56SQ,40

SRAMs

1 mm

70 Cel

3-STATE

1KX8

1K

2 V

0 Cel

MATTE TIN

QUAD

2

S-XQCC-N48

5.5 V

14.3002 mm

Not Qualified

8192 bit

4.5 V

e3

.0015 Amp

14.3002 mm

55 ns

7134SA55L48GI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

48

QCCN

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

270 mA

4096 words

COMMON

5

5

8

CHIP CARRIER

LCC48,.56SQ,40

SRAMs

1 mm

85 Cel

3-STATE

4KX8

4K

4.5 V

-40 Cel

MATTE TIN

QUAD

2

S-CQCC-N48

5.5 V

Not Qualified

32768 bit

4.5 V

e3

.03 Amp

55 ns

IDT7140SA25CI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

48

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

280 mA

1024 words

COMMON

5

5

8

IN-LINE

DIP48,.6

SRAMs

2.54 mm

85 Cel

3-STATE

1KX8

1K

4.5 V

-40 Cel

TIN LEAD

DUAL

2

R-CDIP-T48

5.5 V

4.826 mm

15.24 mm

Not Qualified

8192 bit

4.5 V

e0

.03 Amp

60.96 mm

25 ns

IDT7134LA20L488

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

48

QCCN

SQUARE

CERAMIC

YES

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

240 mA

4096 words

COMMON

5

5

8

CHIP CARRIER

LCC48,.56SQ,40

SRAMs

1 mm

70 Cel

3-STATE

4KX8

4K

2 V

0 Cel

TIN LEAD

QUAD

2

S-XQCC-N48

Not Qualified

32768 bit

e0

.0015 Amp

20 ns

UPD448010GY-C12X-MJH

Renesas Electronics

STANDARD SRAM

OTHER

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

1048576 words

COMMON

2.5/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.71,20

SRAMs

.5 mm

85 Cel

3-STATE

1MX8

1M

1 V

-25 Cel

TIN LEAD

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

8388608 bit

2.3 V

e0

16.4 mm

120 ns

7130LA55LGB8

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

QCCN

SQUARE

UNSPECIFIED

YES

1

CMOS

MIL-PRF-38535 Class Q

NO LEAD

PARALLEL

ASYNCHRONOUS

140 mA

1024 words

5

8

CHIP CARRIER

1.27 mm

125 Cel

1KX8

1K

-55 Cel

QUAD

S-XQCC-N48

5.5 V

14.3002 mm

8192 bit

4.5 V

14.3002 mm

55 ns

HM62V16512LBPI-5

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

524288 words

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.75 mm

85 Cel

512KX16

512K

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6.5 mm

Not Qualified

8388608 bit

2.7 V

9.8 mm

55 ns

IDT7134SA35PDG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

48

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

260 mA

4096 words

COMMON

5

5

8

IN-LINE

DIP48,.6

SRAMs

2.54 mm

70 Cel

3-STATE

4KX8

4K

4.5 V

0 Cel

MATTE TIN

DUAL

2

R-PDIP-T48

Not Qualified

32768 bit

e3

.015 Amp

35 ns

7134LA55L48B

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

QCCN

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

220 mA

4096 words

COMMON

5

5

8

CHIP CARRIER

LCC48,.56SQ,40

SRAMs

1 mm

125 Cel

3-STATE

4KX8

4K

2 V

-55 Cel

Tin/Lead (Sn/Pb)

QUAD

2

S-CQCC-N48

1

5.5 V

3.048 mm

14.224 mm

Not Qualified

32768 bit

4.5 V

AUTOMATIC POWER-DOWN; BATTERY BACKUP

e0

NOT SPECIFIED

240

.004 Amp

14.224 mm

55 ns

IDT7140SA35L48GB8

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

QCCN

SQUARE

CERAMIC

YES

CMOS

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

230 mA

1024 words

COMMON

5

5

8

CHIP CARRIER

LCC48,.56SQ,40

SRAMs

1 mm

125 Cel

3-STATE

1KX8

1K

4.5 V

-55 Cel

MATTE TIN

QUAD

2

S-XQCC-N48

Not Qualified

8192 bit

e3

.03 Amp

35 ns

7130SA100CG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

48

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

155 mA

1024 words

COMMON

5

5

8

IN-LINE

DIP48,.6

SRAMs

2.54 mm

70 Cel

3-STATE

1KX8

1K

4.5 V

0 Cel

MATTE TIN

DUAL

2

R-CDIP-T48

5.5 V

4.826 mm

15.24 mm

Not Qualified

8192 bit

4.5 V

e3

.015 Amp

60.96 mm

100 ns

7130SA25L488

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

48

QCCN

SQUARE

CERAMIC

YES

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

220 mA

1024 words

COMMON

5

5

8

CHIP CARRIER

LCC48,.56SQ,40

SRAMs

1 mm

70 Cel

3-STATE

1KX8

1K

4.5 V

0 Cel

TIN LEAD

QUAD

2

S-XQCC-N48

Not Qualified

8192 bit

e0

.015 Amp

25 ns

7134LA20L48

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

48

QCCN

SQUARE

CERAMIC

YES

CMOS

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

240 mA

4096 words

COMMON

5

5

8

CHIP CARRIER

LCC48,.56SQ,40

SRAMs

1 mm

70 Cel

3-STATE

4KX8

4K

2 V

0 Cel

TIN LEAD

QUAD

2

S-XQCC-N48

Not Qualified

32768 bit

e0

.0015 Amp

20 ns

7132LA55PGB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

MIL-PRF-38535

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

140 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP48,.6

SRAMs

2.54 mm

125 Cel

3-STATE

2KX8

2K

2 V

-55 Cel

MATTE TIN

DUAL

2

R-PDIP-T48

5.5 V

5.08 mm

15.24 mm

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER DOWN

e3

.004 Amp

61.849 mm

55 ns

IDT7130LA100FGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

48

QFF

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

140 mA

1024 words

COMMON

5

5

8

FLATPACK

QFL48,.75SQ

SRAMs

1.27 mm

85 Cel

3-STATE

1KX8

1K

2 V

-40 Cel

MATTE TIN

QUAD

2

S-CQFP-F48

5.5 V

2.7432 mm

Not Qualified

8192 bit

4.5 V

e3

.004 Amp

100 ns

7134SA70L48GB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

QCCN

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

MIL-PRF-38535

NO LEAD

PARALLEL

ASYNCHRONOUS

270 mA

4096 words

COMMON

5

5

8

CHIP CARRIER

LCC48,.56SQ,40

SRAMs

1 mm

125 Cel

3-STATE

4KX8

4K

4.5 V

-55 Cel

MATTE TIN

QUAD

2

S-CQCC-N48

5.5 V

Not Qualified

32768 bit

4.5 V

e3

.03 Amp

70 ns

UPD444012AGY-B70X-MKH

Renesas Electronics

STANDARD SRAM

OTHER

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

262144 words

COMMON

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.71,20

SRAMs

.5 mm

85 Cel

YES

3-STATE

256KX16

256K

1 V

-25 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G48

Not Qualified

4194304 bit

e0

70 ns

7134SA35FG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

48

QFF

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

260 mA

4096 words

COMMON

5

5

8

FLATPACK

QFL48,.75SQ

SRAMs

1.27 mm

70 Cel

3-STATE

4KX8

4K

4.5 V

0 Cel

MATTE TIN

QUAD

2

S-CQFP-F48

5.5 V

Not Qualified

32768 bit

4.5 V

e3

.015 Amp

35 ns

7134SA35L48B

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

QCCN

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

300 mA

4096 words

COMMON

5

5

8

CHIP CARRIER

LCC48,.56SQ,40

SRAMs

1 mm

125 Cel

3-STATE

4KX8

4K

4.5 V

-55 Cel

Tin/Lead (Sn/Pb)

QUAD

2

S-CQCC-N48

1

5.5 V

3.048 mm

14.224 mm

Not Qualified

32768 bit

4.5 V

AUTOMATIC POWER-DOWN

e0

NOT SPECIFIED

240

.03 Amp

14.224 mm

35 ns

IDT7132SA55FGB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

QFF

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

MIL-PRF-38535

FLAT

PARALLEL

ASYNCHRONOUS

190 mA

2048 words

COMMON

5

5

8

FLATPACK

QFL48,.75SQ

SRAMs

1.27 mm

125 Cel

3-STATE

2KX8

2K

4.5 V

-55 Cel

MATTE TIN

QUAD

2

S-CQFP-F48

5.5 V

2.7432 mm

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER DOWN

e3

.03 Amp

55 ns

IDT7134LA55L48I8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

48

QCCN

SQUARE

CERAMIC

YES

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

220 mA

4096 words

COMMON

5

5

8

CHIP CARRIER

LCC48,.56SQ,40

SRAMs

1 mm

70 Cel

3-STATE

4KX8

4K

2 V

0 Cel

TIN LEAD

QUAD

2

S-XQCC-N48

Not Qualified

32768 bit

e0

.004 Amp

55 ns

HM62V16256CLBP-7SL

Renesas Electronics

STANDARD SRAM

OTHER

48

TFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

262144 words

2.5

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.75 mm

70 Cel

256KX16

256K

-20 Cel

BOTTOM

S-PBGA-B48

3.6 V

1.2 mm

6.5 mm

Not Qualified

4194304 bit

2.2 V

ALSO OPERATES AT 3.0V SUPPLY VOLTAGE

6.5 mm

70 ns

7132LA100CGB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

MIL-PRF-38535

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

140 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP48,.6

SRAMs

2.54 mm

125 Cel

3-STATE

2KX8

2K

2 V

-55 Cel

MATTE TIN

DUAL

2

R-PDIP-T48

5.5 V

4.826 mm

15.24 mm

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER DOWN

e3

.004 Amp

60.96 mm

100 ns

R1LV1616RSA-8SR

Renesas Electronics

STANDARD SRAM

COMMERCIAL

48

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

1048576 words

COMMON

3

3/3.3

16

SMALL OUTLINE

TSSOP48,.8,20

8

SRAMs

.5 mm

70 Cel

3-STATE

1MX16

1M

2.7 V

0 Cel

DUAL

R-PDSO-G48

3.6 V

Not Qualified

16777216 bit

2.7 V

e0

NOT SPECIFIED

NOT SPECIFIED

.000006 Amp

85 ns

7132SA55PDGB8

Renesas Electronics

MULTI-PORT SRAM

48

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

MIL-PRF-38535

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

190 mA

2048 words

COMMON

5

8

IN-LINE

DIP48,.6

2.54 mm

125 Cel

2KX8

2K

2 V

-55 Cel

DUAL

2

R-PDIP-T48

5.5 V

3.8 mm

15.24 mm

16384 bit

4.5 V

YES

.1 Amp

61.7 mm

55 ns

R1LV0816ABG-7SI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

35 mA

524288 words

COMMON

3

2.5/3.3

16

GRID ARRAY

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

512KX16

512K

1.5 V

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

Not Qualified

8388608 bit

2.4 V

70 ns

71V416L15BEGI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

TFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

170 mA

262144 words

COMMON

3.3

3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

256KX16

256K

3 V

-40 Cel

TIN SILVER COPPER

BOTTOM

S-PBGA-B48

3

3.6 V

1.2 mm

9 mm

Not Qualified

4194304 bit

3 V

e1

40

260

.01 Amp

9 mm

15 ns

7134SA55FI8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

48

QFF

SQUARE

CERAMIC

YES

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

270 mA

4096 words

COMMON

5

5

8

FLATPACK

QFL48,.75SQ

SRAMs

1.27 mm

70 Cel

3-STATE

4KX8

4K

4.5 V

0 Cel

TIN LEAD

QUAD

2

S-XQFP-F48

Not Qualified

32768 bit

e0

.03 Amp

55 ns

RMLV1616AGSA-5U2

Renesas Electronics

STANDARD SRAM

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

1048576 words

COMMON

3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

.5 mm

85 Cel

3-STATE

1MX16

1M

1.5 V

-40 Cel

DUAL

1

R-PDSO-G48

3.6 V

1.1 mm

12 mm

16777216 bit

2.7 V

CAN ALSO BE CONFIGURED AS 2M X 8

YES

.000008 Amp

16.4 mm

55 ns

RMLV1616AGSA-4U2

Renesas Electronics

STANDARD SRAM

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

1048576 words

COMMON

3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

.5 mm

85 Cel

3-STATE

1MX16

1M

1.5 V

-40 Cel

DUAL

1

R-PDSO-G48

3.6 V

1.1 mm

12 mm

16777216 bit

2.7 V

CAN ALSO BE CONFIGURED AS 2M X 8

YES

.000008 Amp

16.4 mm

45 ns

RMLV1616AGBG-4U2

Renesas Electronics

STANDARD SRAM

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

35 mA

1048576 words

COMMON

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

1MX16

1M

1.5 V

-40 Cel

BOTTOM

1

R-PBGA-B48

3.6 V

1.2 mm

7.5 mm

16777216 bit

2.7 V

CAN ALSO BE CONFIGURED AS 2M X 8

YES

.000008 Amp

8.5 mm

45 ns

RMLV1616AGBG-5U2

Renesas Electronics

STANDARD SRAM

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

30 mA

1048576 words

COMMON

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

1MX16

1M

1.5 V

-40 Cel

BOTTOM

1

R-PBGA-B48

3.6 V

1.2 mm

7.5 mm

16777216 bit

2.7 V

CAN ALSO BE CONFIGURED AS 2M X 8

YES

.000008 Amp

8.5 mm

55 ns

RMLV1616AGBG-5U2#KC0

Renesas Electronics

STANDARD SRAM

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

30 mA

1048576 words

COMMON

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

1MX16

1M

1.5 V

-40 Cel

BOTTOM

1

R-PBGA-B48

3

3.6 V

1.2 mm

7.5 mm

16777216 bit

2.7 V

CAN ALSO BE CONFIGURED AS 2M X 8

YES

.000008 Amp

8.5 mm

55 ns

RMLV1616AGBG-5U2#AC0

Renesas Electronics

STANDARD SRAM

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

30 mA

1048576 words

COMMON

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

1MX16

1M

1.5 V

-40 Cel

BOTTOM

1

R-PBGA-B48

3

3.6 V

1.2 mm

7.5 mm

16777216 bit

2.7 V

CAN ALSO BE CONFIGURED AS 2M X 8

YES

.000008 Amp

8.5 mm

55 ns

RMLV1616AGSA-4U2#AA0

Renesas Electronics

STANDARD SRAM

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

1048576 words

COMMON

3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

.5 mm

85 Cel

3-STATE

1MX16

1M

1.5 V

-40 Cel

DUAL

1

R-PDSO-G48

3

3.6 V

1.1 mm

12 mm

16777216 bit

2.7 V

CAN ALSO BE CONFIGURED AS 2M X 8

YES

.000008 Amp

16.4 mm

45 ns

RMLV1616AGBG-4U2#KC0

Renesas Electronics

STANDARD SRAM

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

35 mA

1048576 words

COMMON

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

1MX16

1M

1.5 V

-40 Cel

BOTTOM

1

R-PBGA-B48

3

3.6 V

1.2 mm

7.5 mm

16777216 bit

2.7 V

CAN ALSO BE CONFIGURED AS 2M X 8

YES

.000008 Amp

8.5 mm

45 ns

RMLV1616AGSA-4U2#KA0

Renesas Electronics

STANDARD SRAM

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

1048576 words

COMMON

3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

.5 mm

85 Cel

3-STATE

1MX16

1M

1.5 V

-40 Cel

DUAL

1

R-PDSO-G48

3

3.6 V

1.1 mm

12 mm

16777216 bit

2.7 V

CAN ALSO BE CONFIGURED AS 2M X 8

YES

.000008 Amp

16.4 mm

45 ns

RMLV1616AGSA-5U2#AA0

Renesas Electronics

STANDARD SRAM

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

1048576 words

COMMON

3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

.5 mm

85 Cel

3-STATE

1MX16

1M

1.5 V

-40 Cel

DUAL

1

R-PDSO-G48

3

3.6 V

1.1 mm

12 mm

16777216 bit

2.7 V

CAN ALSO BE CONFIGURED AS 2M X 8

YES

.000008 Amp

16.4 mm

55 ns

IDT7142LA35CGB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

MIL-PRF-38535

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

170 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP48,.6

SRAMs

2.54 mm

125 Cel

3-STATE

2KX8

2K

2 V

-55 Cel

MATTE TIN

DUAL

2

R-CDIP-T48

5.5 V

4.826 mm

15.24 mm

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER DOWN

e3

.004 Amp

60.96 mm

35 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.