Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
48 |
QCCN |
SQUARE |
CERAMIC |
YES |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
260 mA |
4096 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC48,.56SQ,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
4.5 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-XQCC-N48 |
Not Qualified |
32768 bit |
e3 |
.015 Amp |
35 ns |
||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
48 |
QFF |
SQUARE |
CERAMIC |
YES |
CMOS |
FLAT |
PARALLEL |
ASYNCHRONOUS |
220 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFL48,.75SQ |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
1KX8 |
1K |
2 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-XQFP-F48 |
Not Qualified |
8192 bit |
e0 |
.004 Amp |
25 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QFF |
SQUARE |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
230 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFL48,.75SQ |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
1KX8 |
1K |
4.5 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-XQFP-F48 |
1 |
Not Qualified |
8192 bit |
e0 |
.03 Amp |
35 ns |
|||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
48 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
130 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
3.15 V |
0 Cel |
TIN LEAD |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.34 mm |
7 mm |
Not Qualified |
1048576 bit |
3 V |
e0 |
30 |
225 |
.01 Amp |
7 mm |
15 ns |
|||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
40 mA |
262144 words |
COMMON |
3 |
2.5/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.71,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
1 V |
-25 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
4194304 bit |
2.2 V |
e0 |
18 mm |
85 ns |
|||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
48 |
QCCN |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
8 |
CHIP CARRIER |
70 Cel |
4KX8 |
4K |
0 Cel |
QUAD |
S-XQCC-N48 |
5.5 V |
32768 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
45 ns |
||||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
48 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
220 mA |
1024 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC48,.56SQ,40 |
SRAMs |
1.016 mm |
70 Cel |
3-STATE |
1KX8 |
1K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-CQCC-N48 |
5.5 V |
3.048 mm |
14.3002 mm |
Not Qualified |
8192 bit |
4.5 V |
e0 |
.015 Amp |
14.3002 mm |
25 ns |
|||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
48 |
QCCN |
SQUARE |
CERAMIC |
YES |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
240 mA |
4096 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC48,.56SQ,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-XQCC-N48 |
Not Qualified |
32768 bit |
e0 |
.015 Amp |
70 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
48 |
QFF |
SQUARE |
CERAMIC |
YES |
CMOS |
FLAT |
PARALLEL |
ASYNCHRONOUS |
240 mA |
4096 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFL48,.75SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
2 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-XQFP-F48 |
Not Qualified |
32768 bit |
e0 |
.0015 Amp |
20 ns |
|||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
48 |
QCCN |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
110 mA |
1024 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC48,.56SQ,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
1KX8 |
1K |
2 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-XQCC-N48 |
5.5 V |
14.3002 mm |
Not Qualified |
8192 bit |
4.5 V |
e3 |
.0015 Amp |
14.3002 mm |
55 ns |
|||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
48 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
270 mA |
4096 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC48,.56SQ,40 |
SRAMs |
1 mm |
85 Cel |
3-STATE |
4KX8 |
4K |
4.5 V |
-40 Cel |
MATTE TIN |
QUAD |
2 |
S-CQCC-N48 |
5.5 V |
Not Qualified |
32768 bit |
4.5 V |
e3 |
.03 Amp |
55 ns |
|||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
48 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
280 mA |
1024 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP48,.6 |
SRAMs |
2.54 mm |
85 Cel |
3-STATE |
1KX8 |
1K |
4.5 V |
-40 Cel |
TIN LEAD |
DUAL |
2 |
R-CDIP-T48 |
5.5 V |
4.826 mm |
15.24 mm |
Not Qualified |
8192 bit |
4.5 V |
e0 |
.03 Amp |
60.96 mm |
25 ns |
|||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
48 |
QCCN |
SQUARE |
CERAMIC |
YES |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
240 mA |
4096 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC48,.56SQ,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
2 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-XQCC-N48 |
Not Qualified |
32768 bit |
e0 |
.0015 Amp |
20 ns |
|||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
1048576 words |
COMMON |
2.5/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.71,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
1MX8 |
1M |
1 V |
-25 Cel |
TIN LEAD |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
8388608 bit |
2.3 V |
e0 |
16.4 mm |
120 ns |
||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QCCN |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
MIL-PRF-38535 Class Q |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
140 mA |
1024 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
125 Cel |
1KX8 |
1K |
-55 Cel |
QUAD |
S-XQCC-N48 |
5.5 V |
14.3002 mm |
8192 bit |
4.5 V |
14.3002 mm |
55 ns |
|||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
524288 words |
3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
512KX16 |
512K |
-40 Cel |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1.2 mm |
6.5 mm |
Not Qualified |
8388608 bit |
2.7 V |
9.8 mm |
55 ns |
||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
48 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
260 mA |
4096 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP48,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
4.5 V |
0 Cel |
MATTE TIN |
DUAL |
2 |
R-PDIP-T48 |
Not Qualified |
32768 bit |
e3 |
.015 Amp |
35 ns |
||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
220 mA |
4096 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC48,.56SQ,40 |
SRAMs |
1 mm |
125 Cel |
3-STATE |
4KX8 |
4K |
2 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
2 |
S-CQCC-N48 |
1 |
5.5 V |
3.048 mm |
14.224 mm |
Not Qualified |
32768 bit |
4.5 V |
AUTOMATIC POWER-DOWN; BATTERY BACKUP |
e0 |
NOT SPECIFIED |
240 |
.004 Amp |
14.224 mm |
55 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QCCN |
SQUARE |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
230 mA |
1024 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC48,.56SQ,40 |
SRAMs |
1 mm |
125 Cel |
3-STATE |
1KX8 |
1K |
4.5 V |
-55 Cel |
MATTE TIN |
QUAD |
2 |
S-XQCC-N48 |
Not Qualified |
8192 bit |
e3 |
.03 Amp |
35 ns |
|||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
48 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
155 mA |
1024 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP48,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
1KX8 |
1K |
4.5 V |
0 Cel |
MATTE TIN |
DUAL |
2 |
R-CDIP-T48 |
5.5 V |
4.826 mm |
15.24 mm |
Not Qualified |
8192 bit |
4.5 V |
e3 |
.015 Amp |
60.96 mm |
100 ns |
||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
48 |
QCCN |
SQUARE |
CERAMIC |
YES |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
220 mA |
1024 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC48,.56SQ,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
1KX8 |
1K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-XQCC-N48 |
Not Qualified |
8192 bit |
e0 |
.015 Amp |
25 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
48 |
QCCN |
SQUARE |
CERAMIC |
YES |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
240 mA |
4096 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC48,.56SQ,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
2 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-XQCC-N48 |
Not Qualified |
32768 bit |
e0 |
.0015 Amp |
20 ns |
||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
MIL-PRF-38535 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
140 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP48,.6 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
2 V |
-55 Cel |
MATTE TIN |
DUAL |
2 |
R-PDIP-T48 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER DOWN |
e3 |
.004 Amp |
61.849 mm |
55 ns |
||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
48 |
QFF |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
FLAT |
PARALLEL |
ASYNCHRONOUS |
140 mA |
1024 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFL48,.75SQ |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
1KX8 |
1K |
2 V |
-40 Cel |
MATTE TIN |
QUAD |
2 |
S-CQFP-F48 |
5.5 V |
2.7432 mm |
Not Qualified |
8192 bit |
4.5 V |
e3 |
.004 Amp |
100 ns |
||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
MIL-PRF-38535 |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
270 mA |
4096 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC48,.56SQ,40 |
SRAMs |
1 mm |
125 Cel |
3-STATE |
4KX8 |
4K |
4.5 V |
-55 Cel |
MATTE TIN |
QUAD |
2 |
S-CQCC-N48 |
5.5 V |
Not Qualified |
32768 bit |
4.5 V |
e3 |
.03 Amp |
70 ns |
||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
48 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
40 mA |
262144 words |
COMMON |
3/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP48,.71,20 |
SRAMs |
.5 mm |
85 Cel |
YES |
3-STATE |
256KX16 |
256K |
1 V |
-25 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G48 |
Not Qualified |
4194304 bit |
e0 |
70 ns |
|||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
48 |
QFF |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
FLAT |
PARALLEL |
ASYNCHRONOUS |
260 mA |
4096 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFL48,.75SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
4.5 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-CQFP-F48 |
5.5 V |
Not Qualified |
32768 bit |
4.5 V |
e3 |
.015 Amp |
35 ns |
|||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
300 mA |
4096 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC48,.56SQ,40 |
SRAMs |
1 mm |
125 Cel |
3-STATE |
4KX8 |
4K |
4.5 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
2 |
S-CQCC-N48 |
1 |
5.5 V |
3.048 mm |
14.224 mm |
Not Qualified |
32768 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
e0 |
NOT SPECIFIED |
240 |
.03 Amp |
14.224 mm |
35 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QFF |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
MIL-PRF-38535 |
FLAT |
PARALLEL |
ASYNCHRONOUS |
190 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFL48,.75SQ |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
4.5 V |
-55 Cel |
MATTE TIN |
QUAD |
2 |
S-CQFP-F48 |
5.5 V |
2.7432 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER DOWN |
e3 |
.03 Amp |
55 ns |
||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
48 |
QCCN |
SQUARE |
CERAMIC |
YES |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
220 mA |
4096 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC48,.56SQ,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
2 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-XQCC-N48 |
Not Qualified |
32768 bit |
e0 |
.004 Amp |
55 ns |
|||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
48 |
TFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
262144 words |
2.5 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
.75 mm |
70 Cel |
256KX16 |
256K |
-20 Cel |
BOTTOM |
S-PBGA-B48 |
3.6 V |
1.2 mm |
6.5 mm |
Not Qualified |
4194304 bit |
2.2 V |
ALSO OPERATES AT 3.0V SUPPLY VOLTAGE |
6.5 mm |
70 ns |
|||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
MIL-PRF-38535 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
140 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP48,.6 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
2 V |
-55 Cel |
MATTE TIN |
DUAL |
2 |
R-PDIP-T48 |
5.5 V |
4.826 mm |
15.24 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER DOWN |
e3 |
.004 Amp |
60.96 mm |
100 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
48 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
40 mA |
1048576 words |
COMMON |
3 |
3/3.3 |
16 |
SMALL OUTLINE |
TSSOP48,.8,20 |
8 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
2.7 V |
0 Cel |
DUAL |
R-PDSO-G48 |
3.6 V |
Not Qualified |
16777216 bit |
2.7 V |
e0 |
NOT SPECIFIED |
NOT SPECIFIED |
.000006 Amp |
85 ns |
||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
48 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
MIL-PRF-38535 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
190 mA |
2048 words |
COMMON |
5 |
8 |
IN-LINE |
DIP48,.6 |
2.54 mm |
125 Cel |
2KX8 |
2K |
2 V |
-55 Cel |
DUAL |
2 |
R-PDIP-T48 |
5.5 V |
3.8 mm |
15.24 mm |
16384 bit |
4.5 V |
YES |
.1 Amp |
61.7 mm |
55 ns |
|||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
35 mA |
524288 words |
COMMON |
3 |
2.5/3.3 |
16 |
GRID ARRAY |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
512KX16 |
512K |
1.5 V |
-40 Cel |
BOTTOM |
R-PBGA-B48 |
3.6 V |
Not Qualified |
8388608 bit |
2.4 V |
70 ns |
||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
TFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
170 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
3 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.2 mm |
9 mm |
Not Qualified |
4194304 bit |
3 V |
e1 |
40 |
260 |
.01 Amp |
9 mm |
15 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
48 |
QFF |
SQUARE |
CERAMIC |
YES |
CMOS |
FLAT |
PARALLEL |
ASYNCHRONOUS |
270 mA |
4096 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFL48,.75SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-XQFP-F48 |
Not Qualified |
32768 bit |
e0 |
.03 Amp |
55 ns |
|||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
30 mA |
1048576 words |
COMMON |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.8,20 |
.5 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
1.5 V |
-40 Cel |
DUAL |
1 |
R-PDSO-G48 |
3.6 V |
1.1 mm |
12 mm |
16777216 bit |
2.7 V |
CAN ALSO BE CONFIGURED AS 2M X 8 |
YES |
.000008 Amp |
16.4 mm |
55 ns |
||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
35 mA |
1048576 words |
COMMON |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.8,20 |
.5 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
1.5 V |
-40 Cel |
DUAL |
1 |
R-PDSO-G48 |
3.6 V |
1.1 mm |
12 mm |
16777216 bit |
2.7 V |
CAN ALSO BE CONFIGURED AS 2M X 8 |
YES |
.000008 Amp |
16.4 mm |
45 ns |
||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
35 mA |
1048576 words |
COMMON |
3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
.75 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
1.5 V |
-40 Cel |
BOTTOM |
1 |
R-PBGA-B48 |
3.6 V |
1.2 mm |
7.5 mm |
16777216 bit |
2.7 V |
CAN ALSO BE CONFIGURED AS 2M X 8 |
YES |
.000008 Amp |
8.5 mm |
45 ns |
||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
1048576 words |
COMMON |
3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
.75 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
1.5 V |
-40 Cel |
BOTTOM |
1 |
R-PBGA-B48 |
3.6 V |
1.2 mm |
7.5 mm |
16777216 bit |
2.7 V |
CAN ALSO BE CONFIGURED AS 2M X 8 |
YES |
.000008 Amp |
8.5 mm |
55 ns |
||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
1048576 words |
COMMON |
3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
.75 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
1.5 V |
-40 Cel |
BOTTOM |
1 |
R-PBGA-B48 |
3 |
3.6 V |
1.2 mm |
7.5 mm |
16777216 bit |
2.7 V |
CAN ALSO BE CONFIGURED AS 2M X 8 |
YES |
.000008 Amp |
8.5 mm |
55 ns |
|||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
1048576 words |
COMMON |
3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
.75 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
1.5 V |
-40 Cel |
BOTTOM |
1 |
R-PBGA-B48 |
3 |
3.6 V |
1.2 mm |
7.5 mm |
16777216 bit |
2.7 V |
CAN ALSO BE CONFIGURED AS 2M X 8 |
YES |
.000008 Amp |
8.5 mm |
55 ns |
|||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
35 mA |
1048576 words |
COMMON |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.8,20 |
.5 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
1.5 V |
-40 Cel |
DUAL |
1 |
R-PDSO-G48 |
3 |
3.6 V |
1.1 mm |
12 mm |
16777216 bit |
2.7 V |
CAN ALSO BE CONFIGURED AS 2M X 8 |
YES |
.000008 Amp |
16.4 mm |
45 ns |
|||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
35 mA |
1048576 words |
COMMON |
3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
.75 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
1.5 V |
-40 Cel |
BOTTOM |
1 |
R-PBGA-B48 |
3 |
3.6 V |
1.2 mm |
7.5 mm |
16777216 bit |
2.7 V |
CAN ALSO BE CONFIGURED AS 2M X 8 |
YES |
.000008 Amp |
8.5 mm |
45 ns |
|||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
35 mA |
1048576 words |
COMMON |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.8,20 |
.5 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
1.5 V |
-40 Cel |
DUAL |
1 |
R-PDSO-G48 |
3 |
3.6 V |
1.1 mm |
12 mm |
16777216 bit |
2.7 V |
CAN ALSO BE CONFIGURED AS 2M X 8 |
YES |
.000008 Amp |
16.4 mm |
45 ns |
|||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
30 mA |
1048576 words |
COMMON |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.8,20 |
.5 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
1.5 V |
-40 Cel |
DUAL |
1 |
R-PDSO-G48 |
3 |
3.6 V |
1.1 mm |
12 mm |
16777216 bit |
2.7 V |
CAN ALSO BE CONFIGURED AS 2M X 8 |
YES |
.000008 Amp |
16.4 mm |
55 ns |
|||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-PRF-38535 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
170 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP48,.6 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
2 V |
-55 Cel |
MATTE TIN |
DUAL |
2 |
R-CDIP-T48 |
5.5 V |
4.826 mm |
15.24 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER DOWN |
e3 |
.004 Amp |
60.96 mm |
35 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.