48 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
M5M5Y816WG-70HI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		524288 words		2		16	GRID ARRAY			.75 mm	85 Cel			512KX16	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48		2.3 V	1.06 mm	7 mm	Not Qualified	8388608 bit	1.65 V		e1					8.5 mm	70 ns
IDT7140SA55FB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	125 Cel		3-STATE	1KX8	1K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F48	1				Not Qualified	8192 bit			e0				.03 Amp		55 ns
7130SA25CGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535 Class Q	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	230 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel		3-STATE	1KX8	1K	4.5 V	-55 Cel	MATTE TIN	DUAL	2	R-PDIP-T48		5.5 V			Not Qualified	8192 bit	4.5 V		e3				.03 Amp		25 ns
UPD448010GY-D12X-MJH	Renesas Electronics	STANDARD SRAM	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	COMMON		2/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20	SRAMs	.5 mm	85 Cel		3-STATE	1MX8	1M	1 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	8388608 bit	1.8 V		e0					16.4 mm	120 ns
IDT7130LA25PG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		8	IN-LINE			2.54 mm	70 Cel			1KX8	1K		0 Cel	MATTE TIN	DUAL		R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e3					61.849 mm	25 ns
UPD448010GY-D10X-MKH	Renesas Electronics	STANDARD SRAM	OTHER	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	COMMON		2/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20	SRAMs	.5 mm	85 Cel	YES	3-STATE	1MX8	1M	1 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	8388608 bit	1.8 V		e0					16.4 mm	100 ns
71V016SA10BFG	Renesas Electronics	STANDARD SRAM		48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	160 mA	65536 words	COMMON	3.3		16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		.75 mm	70 Cel		3-STATE	64KX16	64K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B48	3	3.6 V	1.4 mm	7 mm		1048576 bit	3.15 V		e1	40	260	YES	.01 Amp	7 mm	10 ns
IDT7140SA55L	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		1024 words		5		8	CHIP CARRIER			1.016 mm	70 Cel		3-STATE	1KX8	1K		0 Cel	TIN LEAD	QUAD	2	S-CQCC-N48		5.5 V	3.048 mm	14.3002 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG	e0			YES		14.3002 mm	55 ns
7134SA45F8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QFF	SQUARE	CERAMIC	YES		CMOS		FLAT	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	70 Cel		3-STATE	4KX8	4K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-XQFP-F48					Not Qualified	32768 bit			e0				.015 Amp		45 ns
IDT7134LA25FI8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QFF	SQUARE	CERAMIC	YES		CMOS		FLAT	PARALLEL	ASYNCHRONOUS	260 mA	4096 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	70 Cel		3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-XQFP-F48					Not Qualified	32768 bit			e0				.004 Amp		25 ns
7130LA25FI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QFF	SQUARE	CERAMIC	YES		CMOS		FLAT	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	85 Cel		3-STATE	1KX8	1K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-XQFP-F48	1				Not Qualified	8192 bit			e0				.004 Amp		25 ns
HM62V16512LBPI-7	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		524288 words		3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel			512KX16	512K		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm	6.5 mm	Not Qualified	8388608 bit	2.7 V							9.8 mm	70 ns
IDT7130LA55C	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	70 Cel		3-STATE	1KX8	1K	2 V	0 Cel	TIN LEAD	DUAL	2	R-CDIP-T48		5.5 V	4.826 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e0				.004 Amp	60.96 mm	55 ns
7134SA35FB8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QFF	SQUARE	CERAMIC	YES		CMOS		FLAT	PARALLEL	ASYNCHRONOUS	300 mA	4096 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	70 Cel		3-STATE	4KX8	4K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-XQFP-F48					Not Qualified	32768 bit			e0				.03 Amp		35 ns
IDT7132SA35FGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	230 mA	2048 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	125 Cel		3-STATE	2KX8	2K	4.5 V	-55 Cel	MATTE TIN	QUAD	2	S-CQFP-F48		5.5 V	2.7432 mm		Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3				.03 Amp		35 ns
7130SA100CGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535 Class Q	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel		3-STATE	1KX8	1K	4.5 V	-55 Cel	MATTE TIN	DUAL	2	R-CDIP-T48		5.5 V	4.826 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e3				.03 Amp	60.96 mm	100 ns
IDT7142SA100CB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	190 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel		3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	DUAL	2	R-CDIP-T48		5.5 V	4.826 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0				.03 Amp	60.96 mm	100 ns
7130LA25CB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel		3-STATE	1KX8	1K	2 V	-55 Cel	TIN LEAD	DUAL	2	R-XDIP-T48					Not Qualified	8192 bit			e0				.004 Amp		25 ns
IDT7134LA45PDGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel		3-STATE	4KX8	4K	2 V	-55 Cel	MATTE TIN	DUAL	2	R-PDIP-T48					Not Qualified	32768 bit			e3				.004 Amp		45 ns
7132LA55CG8	Renesas Electronics	MULTI-PORT SRAM		48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	2048 words	COMMON	5		8	IN-LINE	DIP48,.6		2.54 mm	70 Cel			2KX8	2K	2 V	0 Cel		DUAL	2	R-CDIP-T48		5.5 V	3.3 mm	15.24 mm		16384 bit	4.5 V					YES	.07 Amp	61.72 mm	55 ns
IDT7130LA55F	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	110 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	70 Cel		3-STATE	1KX8	1K	2 V	0 Cel	TIN LEAD	QUAD	2	S-CQFP-F48		5.5 V	2.7432 mm		Not Qualified	8192 bit	4.5 V		e0				.004 Amp		55 ns
7134LA45CG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	200 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	70 Cel		3-STATE	4KX8	4K	2 V	0 Cel	MATTE TIN	DUAL	2	R-CDIP-T48		5.5 V			Not Qualified	32768 bit	4.5 V		e3				.0015 Amp		45 ns
IDT71V416L15BE	Renesas Electronics	STANDARD SRAM	COMMERCIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	160 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		3-STATE	256KX16	256K	3 V	0 Cel	TIN LEAD	BOTTOM		S-PBGA-B48	4	3.6 V	1.2 mm	9 mm	Not Qualified	4194304 bit	3 V		e0	30	225		.01 Amp	9 mm	15 ns
7134LA45LG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		4096 words		5		8	CHIP CARRIER				70 Cel			4KX8	4K		0 Cel		QUAD		S-XQCC-N48		5.5 V				32768 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED				45 ns
IDT7140LA100FGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QFF	SQUARE	CERAMIC	YES		CMOS		FLAT	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	85 Cel		3-STATE	1KX8	1K	2 V	-40 Cel	MATTE TIN	QUAD	2	S-XQFP-F48					Not Qualified	8192 bit			e3				.004 Amp		100 ns
IDT7130LA25FB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	125 Cel		3-STATE	1KX8	1K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F48	1				Not Qualified	8192 bit			e0				.004 Amp		25 ns
IDT7132SA35FG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	165 mA	2048 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	70 Cel		3-STATE	2KX8	2K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-CQFP-F48		5.5 V	2.7432 mm		Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3				.015 Amp		35 ns
IDT7142LA25L48	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	170 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	70 Cel		3-STATE	2KX8	2K	2 V	0 Cel	TIN LEAD	QUAD	2	S-CQCC-N48		5.5 V	3.048 mm	14.3002 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN; BATTERY BACKUP	e0				.0015 Amp	14.3002 mm	25 ns
IDT7130LA100L48G8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	110 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1 mm	70 Cel		3-STATE	1KX8	1K	2 V	0 Cel	MATTE TIN	QUAD	2	S-XQCC-N48					Not Qualified	8192 bit			e3				.0015 Amp		100 ns
7130SA55FG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	155 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	QFL48,.75SQ	SRAMs	1.27 mm	70 Cel		3-STATE	1KX8	1K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-CQCC-N48	1	5.5 V		14.3002 mm	Not Qualified	8192 bit	4.5 V		e3				.015 Amp	14.3002 mm	55 ns
IDT7140LA35L48B	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS	170 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	125 Cel		3-STATE	1KX8	1K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48		5.5 V	3.048 mm	14.3002 mm	Not Qualified	8192 bit	4.5 V		e0				.004 Amp	14.3002 mm	35 ns
IDT7130SA55FGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	125 Cel		3-STATE	1KX8	1K	4.5 V	-55 Cel	MATTE TIN	QUAD	2	S-CQFP-F48		5.5 V	2.7432 mm		Not Qualified	8192 bit	4.5 V		e3				.03 Amp		55 ns
UPD444010AGY-B70X-MKH	Renesas Electronics	STANDARD SRAM	OTHER	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	524288 words	COMMON		3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20	SRAMs	.5 mm	85 Cel	YES	3-STATE	512KX8	512K	1 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	4194304 bit	2.7 V		e0					16.4 mm	70 ns
IDT7134LA70L48B	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	220 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.02 mm	125 Cel		3-STATE	4KX8	4K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48		5.5 V	3.048 mm	14.22 mm	Not Qualified	32768 bit	4.5 V	AUTOMATIC POWER-DOWN; BATTERY BACKUP	e0				.004 Amp	14.22 mm	70 ns
IDT7140LA25PGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		8	IN-LINE			2.54 mm	85 Cel			1KX8	1K		-40 Cel	MATTE TIN	DUAL		R-PDIP-T48		5.5 V	5.08 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e3					61.849 mm	25 ns
UPD448012GY-D15X-MJH	Renesas Electronics	STANDARD SRAM	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	COMMON		2/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20	SRAMs	.5 mm	85 Cel		3-STATE	512KX16	512K	1 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G48					Not Qualified	8388608 bit			e0						150 ns
7130SA55L48GI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1 mm	85 Cel		3-STATE	1KX8	1K	4.5 V	-40 Cel	MATTE TIN	QUAD	2	S-XQCC-N48		5.5 V		14.3002 mm	Not Qualified	8192 bit	4.5 V		e3				.03 Amp	14.3002 mm	55 ns
7134LA55CG8	Renesas Electronics	STANDARD SRAM		48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	200 mA	4096 words	COMMON	5		8	IN-LINE	DIP48(UNSPEC)			70 Cel			4KX8	4K	2 V	0 Cel		DUAL	2	R-CDIP-T48		5.5 V				32768 bit	4.5 V					YES	.1 Amp		55 ns
7134LA25FI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QFF	SQUARE	CERAMIC	YES		CMOS		FLAT	PARALLEL	ASYNCHRONOUS	260 mA	4096 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	85 Cel		3-STATE	4KX8	4K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-XQFP-F48					Not Qualified	32768 bit			e0				.004 Amp		25 ns
IDT7132LA25L48GI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	220 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	85 Cel		3-STATE	2KX8	2K	2 V	-40 Cel	MATTE TIN	QUAD	2	S-CQCC-N48		5.5 V	3.048 mm	14.3002 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3				.004 Amp	14.3002 mm	25 ns
IDT7130SA100L48B	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS	190 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	125 Cel		3-STATE	1KX8	1K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48		5.5 V	3.048 mm	14.3002 mm	Not Qualified	8192 bit	4.5 V		e0				.03 Amp	14.3002 mm	100 ns
7130LA25FGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	QFL48,.75SQ	SRAMs	1.27 mm	85 Cel		3-STATE	1KX8	1K	2 V	-40 Cel	MATTE TIN	QUAD	2	S-CQCC-N48	1	5.5 V		14.3002 mm	Not Qualified	8192 bit	4.5 V		e3				.004 Amp	14.3002 mm	25 ns
IDT7130LA25CB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel		3-STATE	1KX8	1K	2 V	-55 Cel	TIN LEAD	DUAL	2	R-CDIP-T48		5.5 V	4.826 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e0				.004 Amp	60.96 mm	25 ns
7130SA25FB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	230 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	125 Cel		3-STATE	1KX8	1K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F48	1				Not Qualified	8192 bit			e0				.03 Amp		25 ns
UPD444012AGY-C70X-MJH-A	Renesas Electronics	STANDARD SRAM	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20	SRAMs	.5 mm	85 Cel		3-STATE	256KX16	256K	1 V	-25 Cel	TIN BISMUTH	DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	4194304 bit	2.2 V		e6					18 mm	70 ns
71V416L12BE	Renesas Electronics	STANDARD SRAM	COMMERCIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	170 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		3-STATE	256KX16	256K	3 V	0 Cel	TIN LEAD	BOTTOM		S-PBGA-B48	4	3.6 V	1.2 mm	9 mm	Not Qualified	4194304 bit	3 V		e0	30	225		.01 Amp	9 mm	12 ns
7132LA35CG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	70 Cel		3-STATE	2KX8	2K	2 V	0 Cel	MATTE TIN	DUAL	2	R-PDIP-T48		5.5 V	4.826 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3				.0015 Amp	60.96 mm	35 ns
IDT7140LA35CB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	170 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel		3-STATE	1KX8	1K	2 V	-55 Cel	TIN LEAD	DUAL	2	R-CDIP-T48		5.5 V	4.826 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e0				.004 Amp	60.96 mm	35 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.