LFBGA SRAM 526

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY62187EV30LL-55BAXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	55 mA	4194304 words	COMMON	3	2.5/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	4MX16	4M	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.7 V	1.5 mm		8 mm	Not Qualified	67108864 bit	2.2 V		e1		260		.000048 Amp	9.5 mm	55 ns
CY62187EV30LL-55BAXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	55 mA	4194304 words	COMMON	3	2.5/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	4MX16	4M	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.7 V	1.5 mm		8 mm	Not Qualified	67108864 bit	2.2 V		e1	20	260		.000048 Amp	9.5 mm	55 ns
70V631S10BFG	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX18	256K	3.15 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm		15 mm	Not Qualified	4718592 bit	3.15 V		e1	30	260		.015 Amp	15 mm	10 ns
IS61WV51232BLL-10BLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	90	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3.3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		512KX32	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B90	3	3.6 V	1.45 mm		8 mm	Not Qualified	16777216 bit	2.4 V		e1	10	260			13 mm	10 ns
70V3589S133BFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	480 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX36	64K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	2359296 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.04 Amp	15 mm	15 ns
70V3399S133BFI8	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	480 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	128KX18	128K	3.15 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	2359296 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e0	20	225		.04 Amp	15 mm	15 ns
AS6C8008-55BIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	60 mA	1048576 words	COMMON	3	3/5	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	1MX8	1M	2 V	-40 Cel		BOTTOM		R-PBGA-B48	3	5.5 V	1.4 mm		6 mm	Not Qualified	8388608 bit	2.7 V						.00005 Amp	8 mm	55 ns
AS7C316098A-10BIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	160 mA	1048576 words	COMMON	3.3		16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		.75 mm	85 Cel	3-STATE	1MX16	1M	1.5 V	-40 Cel		BOTTOM	1	R-PBGA-B48	3	3.6 V	1.4 mm		6 mm		16777216 bit	2.7 V			40	260	YES	.04 Amp	8 mm	10 ns
IDT70V3399S133BFI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	480 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	128KX18	128K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	2359296 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e0	20	225		.04 Amp	15 mm	15 ns
71V016SA20BFGI8	Renesas Electronics	STANDARD SRAM		48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	3.3		16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		.75 mm	85 Cel	3-STATE	64KX16	64K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B48	3	3.6 V	1.4 mm		7 mm		1048576 bit	3.15 V		e1	40	260	YES	.01 Amp	7 mm	20 ns
IDT71V016SA20BFGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B48	3	3.6 V	1.34 mm		7 mm	Not Qualified	1048576 bit	3.15 V	ALSO OPERATES WITH 3V TO 3.6 V SUPPLY	e1	40	260		.01 Amp	7 mm	20 ns
AS7C38096A-10BIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		8	GRID ARRAY, LOW PROFILE, FINE PITCH			.75 mm	85 Cel		1MX8	1M		-40 Cel		BOTTOM		R-PBGA-B48	3	3.6 V	1.4 mm		6 mm		8388608 bit	2.7 V							8 mm	10 ns
70V3599S166BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	166 MHz	15 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1	30	260		.03 Amp	15 mm	12 ns
AS7C31026C-12BIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	GRID ARRAY, LOW PROFILE, FINE PITCH			.75 mm	85 Cel		64KX16	64K		-40 Cel		BOTTOM		R-PBGA-B48	3	3.6 V	1.34 mm		6 mm	Not Qualified	1048576 bit	3 V		e3/e6	40	260			8 mm	12 ns
AS7C316098A-10BINTR	Alliance Memory	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		16	GRID ARRAY, LOW PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B48	3	3.6 V	1.4 mm		6 mm		16777216 bit	2.7 V							8 mm	10 ns
70V3589S133BFI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	480 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX36	64K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	2359296 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.04 Amp	15 mm	15 ns
70V3589S166BFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	64KX36	64K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	166 MHz	15 mm	Not Qualified	2359296 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1	30	260		.03 Amp	15 mm	12 ns
70V3599S133BFI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	480 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	128KX36	128K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.04 Amp	15 mm	15 ns
71V016SA10BFG8	Renesas Electronics	STANDARD SRAM		48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	160 mA	65536 words	COMMON	3.3		16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		.75 mm	70 Cel	3-STATE	64KX16	64K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B48	3	3.6 V	1.4 mm		7 mm		1048576 bit	3.15 V		e1	40	260	YES	.01 Amp	7 mm	10 ns
71V016SA15BFGI8	Renesas Electronics	STANDARD SRAM		48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	3.3		16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		.75 mm	85 Cel	3-STATE	64KX16	64K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B48	3	3.6 V	1.4 mm		7 mm		1048576 bit	3.15 V		e1	40	260	YES	.01 Amp	7 mm	15 ns
71V016SA20BFGI	Renesas Electronics	STANDARD SRAM		48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	3.3		16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		.75 mm	85 Cel	3-STATE	64KX16	64K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B48	3	3.6 V	1.4 mm		7 mm		1048576 bit	3.15 V		e1	40	260	YES	.01 Amp	7 mm	20 ns
IDT70V3589S133BFI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	480 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX36	64K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	2359296 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.04 Amp	15 mm	15 ns
IDT70V3589S166BFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	64KX36	64K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	166 MHz	15 mm	Not Qualified	2359296 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1	30	260		.03 Amp	15 mm	12 ns
IDT71V016SA10BFG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	160 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	3.15 V	0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B48	3	3.6 V	1.34 mm		7 mm	Not Qualified	1048576 bit	3.15 V	ALSO OPERATES WITH 3V TO 3.6 V SUPPLY	e1	40	260		.01 Amp	7 mm	10 ns
IDT71V016SA12BFGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	160 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B48	3	3.6 V	1.34 mm		7 mm	Not Qualified	1048576 bit	3.15 V	ALSO OPERATES WITH 3V TO 3.6 V SUPPLY	e1	40	260		.01 Amp	7 mm	12 ns
IDT71V016SA15BFGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B48	3	3.6 V	1.34 mm		7 mm	Not Qualified	1048576 bit	3.15 V	ALSO OPERATES WITH 3V TO 3.6 V SUPPLY	e1	40	260		.01 Amp	7 mm	15 ns
IDT71V016SA20BFG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	3 V	0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B48	3	3.6 V	1.34 mm		7 mm	Not Qualified	1048576 bit	3.15 V	ALSO OPERATES WITH 3V TO 3.6 V SUPPLY	e1	40	260		.01 Amp	7 mm	20 ns
IS61WV51232BLL-10BI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	90	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3.3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		512KX32	512K		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B90	3	3.6 V	1.45 mm		8 mm	Not Qualified	16777216 bit	2.4 V		e0					13 mm	10 ns
N04L63W1AB7I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.8 V	-40 Cel		BOTTOM		R-PBGA-B48	1	3.6 V	1.34 mm		6 mm	Not Qualified	4194304 bit	2.3 V						.00001 Amp	8 mm	70 ns
N02L6181AB7IT	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	17 mA	131072 words	COMMON	1.8	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1.2 V	-40 Cel		BOTTOM		R-PBGA-B48	1	2.2 V	1.34 mm		6 mm	Not Qualified	2097152 bit	1.65 V						.000005 Amp	8 mm	70 ns
N02L1618C1AB-70I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	3 mA	131072 words	COMMON	1.8	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1.2 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		2.2 V	1.34 mm		6 mm	Not Qualified	2097152 bit	1.65 V		e0				.00001 Amp	8 mm	70 ns
N04L63W1AB7IT	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.8 V	-40 Cel		BOTTOM		R-PBGA-B48	1	3.6 V	1.34 mm		6 mm	Not Qualified	4194304 bit	2.3 V						.00001 Amp	8 mm	70 ns
N01L1618N1AB-85I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		65536 words		1.8		16	GRID ARRAY, LOW PROFILE, FINE PITCH			.75 mm	85 Cel		64KX16	64K		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		2.2 V	1.34 mm		6 mm	Not Qualified	1048576 bit	1.65 V		e0					8 mm	85 ns
N01L6183AB27I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16 mA	65536 words	COMMON	1.8	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	1.2 V	-40 Cel		BOTTOM		R-PBGA-B48		2.2 V	1.34 mm		6 mm	Not Qualified	1048576 bit	1.65 V						.000005 Amp	8 mm	85 ns
N04Q1612C2BB2-15C	Onsemi	STANDARD SRAM	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		1.2		16	GRID ARRAY, LOW PROFILE, FINE PITCH			.75 mm	70 Cel		256KX16	256K		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B48		1.3 V	1.34 mm		6 mm	Not Qualified	4194304 bit	1.1 V		e1	40	260			8 mm	150 ns
N01L63W3AB5I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	14 mA	65536 words	COMMON	3	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	1.8 V	-40 Cel		BOTTOM		R-PBGA-B48	1	3.6 V	1.34 mm		6 mm	Not Qualified	1048576 bit	2.3 V						.00001 Amp	8 mm	70 ns
N01L163WN1AB-55I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	14 mA	65536 words	COMMON	3	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	1.8 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		3.6 V	1.34 mm		6 mm	Not Qualified	1048576 bit	2.7 V		e0				.00001 Amp	8 mm	55 ns
N01L63W2AB25IT	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	14 mA	65536 words	COMMON	3	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	1.8 V	-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.34 mm		6 mm	Not Qualified	1048576 bit	2.3 V						.00001 Amp	8 mm	70 ns
N02L63W2AB5I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	3	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1.8 V	-40 Cel		BOTTOM		R-PBGA-B48	1	3.6 V	1.34 mm		6 mm	Not Qualified	2097152 bit	2.3 V							8 mm	70 ns
N02L6181AB8IT	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	17 mA	131072 words	COMMON	1.8	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1.2 V	-40 Cel		BOTTOM		R-PBGA-B48	1	2.2 V	1.34 mm		6 mm	Not Qualified	2097152 bit	1.65 V						.000005 Amp	8 mm	85 ns
N02L163WN1AB-70I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	3	2.5/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1.8 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		3.6 V	1.34 mm		6 mm	Not Qualified	2097152 bit	2.3 V		e0				.00001 Amp	8 mm	70 ns
N01L163WC2AB2-70I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	14 mA	65536 words	COMMON	3	2.5/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	1.8 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48		3.6 V	1.34 mm		6 mm	Not Qualified	1048576 bit	2.3 V		e1				.00001 Amp	8 mm	70 ns
N01L1618N1AB-70I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16 mA	65536 words	COMMON	1.8	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	1.2 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		2.2 V	1.34 mm		6 mm	Not Qualified	1048576 bit	1.65 V		e0				.000005 Amp	8 mm	70 ns
N04L163WC2AB-55I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		3		16	GRID ARRAY, LOW PROFILE, FINE PITCH			.75 mm	85 Cel		256KX16	256K		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		3.6 V	1.34 mm		6 mm	Not Qualified	4194304 bit	2.3 V		e0					8 mm	70 ns
N02L1618C1AB2-70I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	3 mA	131072 words	COMMON	1.8	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1.2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48		2.2 V	1.34 mm		6 mm	Not Qualified	2097152 bit	1.65 V		e1				.00001 Amp	8 mm	70 ns
N04L163WC2AB2-85I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		3		16	GRID ARRAY, LOW PROFILE, FINE PITCH			.75 mm	85 Cel		256KX16	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48		3.6 V	1.34 mm		6 mm	Not Qualified	4194304 bit	2.3 V		e1					8 mm	85 ns
N04L63W2AB7IT	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.8 V	-40 Cel		BOTTOM		R-PBGA-B48	1	3.6 V	1.34 mm		6 mm	Not Qualified	4194304 bit	2.3 V						.00001 Amp	8 mm	70 ns
N04L63W2AB27IT	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.8 V	-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.34 mm		6 mm	Not Qualified	4194304 bit	2.3 V						.00001 Amp	8 mm	70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.