LFBGA SRAM 526

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
N01L63W2AB5IT	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	14 mA	65536 words	COMMON	3	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	1.8 V	-40 Cel		BOTTOM		R-PBGA-B48	1	3.6 V	1.34 mm		6 mm	Not Qualified	1048576 bit	2.3 V						.00001 Amp	8 mm	70 ns
N02L6181AB28I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	17 mA	131072 words	COMMON	1.8	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1.2 V	-40 Cel		BOTTOM		R-PBGA-B48		2.2 V	1.34 mm		6 mm	Not Qualified	2097152 bit	1.65 V						.000005 Amp	8 mm	85 ns
N02L6181AB8I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	17 mA	131072 words	COMMON	1.8	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1.2 V	-40 Cel		BOTTOM		R-PBGA-B48	1	2.2 V	1.34 mm		6 mm	Not Qualified	2097152 bit	1.65 V						.000005 Amp	8 mm	85 ns
N02L63W2AB25I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	3	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1.8 V	-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.34 mm		6 mm	Not Qualified	2097152 bit	2.3 V							8 mm	70 ns
N04L1618C2AB-85I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		1.8		16	GRID ARRAY, LOW PROFILE, FINE PITCH			.75 mm	85 Cel		256KX16	256K		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		2.2 V	1.34 mm		6 mm	Not Qualified	4194304 bit	1.65 V		e0					8 mm	85 ns
N04L63W2AB27I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16 mA	262144 words	COMMON	3	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.8 V	-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.34 mm		6 mm	Not Qualified	4194304 bit	2.3 V						.00001 Amp	8 mm	70 ns
N01L163WC2AB2-55I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	14 mA	65536 words	COMMON	3	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	1.8 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48		3.6 V	1.34 mm		6 mm	Not Qualified	1048576 bit	2.3 V		e1				.00001 Amp	8 mm	55 ns
N04L1630C2BB2-55I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		3		16	GRID ARRAY, LOW PROFILE, FINE PITCH			.75 mm	85 Cel		256KX16	256K		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.34 mm		6 mm	Not Qualified	4194304 bit	2.7 V							8 mm	55 ns
N02L1618C1AB2-85I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	3 mA	131072 words	COMMON	1.8	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1.2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48		2.2 V	1.34 mm		6 mm	Not Qualified	2097152 bit	1.65 V		e1				.00001 Amp	8 mm	85 ns
N01L163WN1AB2-70I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	14 mA	65536 words	COMMON	3	2.5/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	1.8 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48		3.6 V	1.34 mm		6 mm	Not Qualified	1048576 bit	2.3 V		e1				.00001 Amp	8 mm	70 ns
N01L63W3AB25I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	14 mA	65536 words	COMMON	3	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	1.8 V	-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.34 mm		6 mm	Not Qualified	1048576 bit	2.3 V						.00001 Amp	8 mm	70 ns
N02L6181AB27I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	17 mA	131072 words	COMMON	1.8	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1.2 V	-40 Cel		BOTTOM		R-PBGA-B48		2.2 V	1.34 mm		6 mm	Not Qualified	2097152 bit	1.65 V						.000005 Amp	8 mm	70 ns
MCM63Z836ZP8.5R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY, LOW PROFILE, FINE PITCH			.65 mm	70 Cel		256KX36	256K		0 Cel		BOTTOM		R-PBGA-B119		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE						20 mm	8.5 ns
MCM63Z836ZP7R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY, LOW PROFILE, FINE PITCH			.65 mm	70 Cel		256KX36	256K		0 Cel		BOTTOM		R-PBGA-B119		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE						20 mm	7 ns
MCM63Z836ZP8R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY, LOW PROFILE, FINE PITCH			.65 mm	70 Cel		256KX36	256K		0 Cel		BOTTOM		R-PBGA-B119		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE						20 mm	8 ns
CY62187G30-55BAXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	55 mA	4194304 words	COMMON	3		16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		.75 mm	85 Cel	3-STATE	4MX16	4M	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.4 mm		8 mm		67108864 bit	2.2 V		e1			YES	.000038 Amp	9.5 mm	55 ns
TC55W1600XB8	Toshiba	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	COMMON	3	2.5/3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	SRAMs	.8 mm	85 Cel	3-STATE	1MX16	1M	1.5 V	-40 Cel		BOTTOM		R-PBGA-B48		3.1 V	1.4 mm		10 mm	Not Qualified	16777216 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			12 mm	100 ns
TC51WKM716AXBN75	Toshiba	PSEUDO STATIC RAM	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	55 mA	8388608 words	COMMON	2.75	1.8,3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	8MX16	8M		-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B69		3.3 V	1.4 mm		9 mm	Not Qualified	134217728 bit	2.6 V		e0				.000003 Amp	12 mm	75 ns
TC51WHM716AXBN70	Toshiba	PSEUDO STATIC RAM	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	55 mA	8388608 words	COMMON	2.75	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	8MX16	8M		-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B69		3.3 V	1.4 mm		9 mm	Not Qualified	134217728 bit	2.6 V		e0				.000003 Amp	12 mm	70 ns
TC55W1600XB7	Toshiba	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	COMMON	3	2.5/3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	SRAMs	.8 mm	85 Cel	3-STATE	1MX16	1M	1.5 V	-40 Cel		BOTTOM		R-PBGA-B48		3.1 V	1.4 mm		10 mm	Not Qualified	16777216 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			12 mm	85 ns
70T631S10BFI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	445 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX18	256K	2.4 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.5 mm		15 mm	Not Qualified	4718592 bit	2.4 V		e0	20	225		.02 Amp	15 mm	10 ns
70V9359L7BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8192 words		3.3		18	GRID ARRAY, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		8KX18	8K		0 Cel	MATTE TIN	BOTTOM		S-PBGA-B100		3.6 V	1.4 mm		10 mm		147456 bit	3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3					10 mm	7.5 ns
UPD98421F1-GA5-A	Renesas Electronics	CONTENT ADDRESSABLE SRAM	COMMERCIAL	240	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	MOS	BALL	PARALLEL	SYNCHRONOUS	1150 mA	8192 words		3.3	3.3	64	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA240,18X18,32	SRAMs	.8 mm	70 Cel		8KX64	8K		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B240		3.45 V	1.38 mm		16 mm	Not Qualified	524288 bit	3.15 V		e1					16 mm	10 ns
70V3599S133BF8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.03 Amp	15 mm	15 ns
70V3569S5BFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	415 mA	16384 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	16KX36	16K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	100 MHz	15 mm	Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	e1	30	260		.03 Amp	15 mm	5 ns
70V3589S133BF8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	64KX36	64K	3.15 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	2359296 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.03 Amp	15 mm	15 ns
70T631S12BFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	395 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX18	256K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.7 mm		15 mm	Not Qualified	4718592 bit	2.4 V		e1	30	260		.02 Amp	15 mm	12 ns
70V7599S166BF	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	790 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	166 MHz	15 mm	Not Qualified	4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.03 Amp	15 mm	12 ns
70T631S15BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	305 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX18	256K	2.4 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.5 mm		15 mm	Not Qualified	4718592 bit	2.4 V		e0	20	225		.01 Amp	15 mm	15 ns
70V3589S166BFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		65536 words		3.3		36	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		64KX36	64K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B208	3	3.45 V	1.7 mm		15 mm	Not Qualified	2359296 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1					15 mm	12 ns
70T659S15BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	305 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	128KX36	128K	2.4 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.5 mm		15 mm	Not Qualified	4718592 bit	2.4 V		e0	20	225		.01 Amp	15 mm	15 ns
70T25L25BFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		8192 words		2.5		16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8KX16	8K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B100	3	2.6 V	1.5 mm		10 mm	Not Qualified	131072 bit	2.4 V		e0		225			10 mm	25 ns
70T24L20BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		4096 words		2.5		16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		4KX16	4K		0 Cel	TIN LEAD	BOTTOM		S-PBGA-B100	3	2.6 V	1.5 mm		10 mm	Not Qualified	65536 bit	2.4 V		e0		225			10 mm	20 ns
70T24L25BFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		4096 words		2.5		16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4KX16	4K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B100	3	2.6 V	1.5 mm		10 mm	Not Qualified	65536 bit	2.4 V		e0		225			10 mm	25 ns
70T15L25BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	130 mA	8192 words	COMMON	2.5	2.5	9	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA100,10X10,32	SRAMs	.8 mm	70 Cel	3-STATE	8KX9	8K	2.4 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B100	3	2.6 V	1.4 mm		10 mm	Not Qualified	73728 bit	2.4 V		e0	20	240		.0025 Amp	10 mm	25 ns
70T25L20BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		8192 words		2.5		16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		8KX16	8K		0 Cel	TIN LEAD	BOTTOM		S-PBGA-B100	3	2.6 V	1.5 mm		10 mm	Not Qualified	131072 bit	2.4 V		e0		225			10 mm	20 ns
70T9359L12BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8192 words		2.5		18	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		8KX18	8K		0 Cel	TIN LEAD	BOTTOM		S-PBGA-B100	3	2.6 V	1.4 mm		10 mm	Not Qualified	147456 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0		225			10 mm	12 ns
70T35L25BFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		8192 words		2.5		18	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8KX18	8K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B100	3	2.6 V	1.5 mm		10 mm	Not Qualified	147456 bit	2.4 V		e0		225			10 mm	25 ns
70T9359L9BFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	220 mA	8192 words	COMMON	2.5	2.5	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA165,11X15,40	SRAMs	.8 mm	85 Cel	3-STATE	8KX18	8K	2.4 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B100	3	2.6 V	1.4 mm		10 mm	Not Qualified	147456 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0		225		.003 Amp	10 mm	9 ns
70T16L25BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	130 mA	16384 words	COMMON	2.5	2.5	9	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA100,10X10,32	SRAMs	.8 mm	70 Cel	3-STATE	16KX9	16K	2.4 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B100	3	2.6 V	1.4 mm		10 mm	Not Qualified	147456 bit	2.4 V		e0	20	240		.0025 Amp	10 mm	25 ns
70T15L25BFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	160 mA	8192 words	COMMON	2.5	2.5	9	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA100,10X10,32	SRAMs	.8 mm	85 Cel	3-STATE	8KX9	8K	2.4 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B100	3	2.6 V	1.4 mm		10 mm	Not Qualified	73728 bit	2.4 V		e0	20	240		.005 Amp	10 mm	25 ns
70T06L25BFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		16384 words		2.5		8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16KX8	16K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B100	3	2.6 V	1.4 mm		10 mm	Not Qualified	131072 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0		225			10 mm	25 ns
70T06L20BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		16384 words		2.5		8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		16KX8	16K		0 Cel	TIN LEAD	BOTTOM		S-PBGA-B100	3	2.6 V	1.4 mm		10 mm	Not Qualified	131072 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0		225			10 mm	20 ns
70T9359L9BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8192 words		2.5		18	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		8KX18	8K		0 Cel	TIN LEAD	BOTTOM		S-PBGA-B100	3	2.6 V	1.4 mm		10 mm	Not Qualified	147456 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0		225			10 mm	9 ns
70T05L25BFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8192 words		2.5		8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8KX8	8K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B100	3	2.6 V	1.4 mm		10 mm	Not Qualified	65536 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0		225			10 mm	25 ns
70T25L25BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		8192 words		2.5		16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		8KX16	8K		0 Cel	TIN LEAD	BOTTOM		S-PBGA-B100	3	2.6 V	1.5 mm		10 mm	Not Qualified	131072 bit	2.4 V		e0		225			10 mm	25 ns
70T16L20BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	140 mA	16384 words	COMMON	2.5	2.5	9	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA100,10X10,32	SRAMs	.8 mm	70 Cel	3-STATE	16KX9	16K	2.4 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B100	3	2.6 V	1.4 mm		10 mm	Not Qualified	147456 bit	2.4 V		e0	20	240		.0025 Amp	10 mm	20 ns
70T06L25BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		16384 words		2.5		8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		16KX8	16K		0 Cel	TIN LEAD	BOTTOM		S-PBGA-B100	3	2.6 V	1.4 mm		10 mm	Not Qualified	131072 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0		225			10 mm	25 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.