LFBGA SRAM 526

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IDT70V3399S133BFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	480 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	128KX18	128K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-CBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	2359296 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e1	30	260		.04 Amp	15 mm	4.2 ns
IDT70V3319S133BFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	480 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX18	256K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-CBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e1	30	260		.04 Amp	15 mm	4.2 ns
IDT70V639S10BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		3.3		18	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		128KX18	128K		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B208	3	3.45 V	1.7 mm		15 mm	Not Qualified	2359296 bit	3.15 V		e1					15 mm	10 ns
IDT70V3599S133BF8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.03 Amp	15 mm	15 ns
71V016SA12BFGI8	Renesas Electronics	STANDARD SRAM		48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	160 mA	65536 words	COMMON	3.3		16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		.75 mm	85 Cel	3-STATE	64KX16	64K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B48	3	3.6 V	1.4 mm		7 mm		1048576 bit	3.15 V		e1	40	260	YES	.01 Amp	7 mm	12 ns
IDT70T633S10BFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	445 mA	524288 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	512KX18	512K	2.4 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.5 mm		15 mm	Not Qualified	9437184 bit	2.4 V		e0	20	225		.02 Amp	15 mm	10 ns
IDT70T3599S166BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	128KX36	128K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.7 mm	166 MHz	15 mm	Not Qualified	4718592 bit	2.4 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1	30	260		.015 Amp	15 mm	12 ns
IDT70V7599S133BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	645 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e0	20	225		.03 Amp	15 mm	15 ns
IDT71V016SA15BFI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	3.15 V	-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B48	3	3.6 V	1.34 mm		7 mm	Not Qualified	1048576 bit	3 V		e0	30	225		.01 Amp	7 mm	15 ns
IDT70T651S12BF8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	355 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX36	256K	2.4 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.5 mm		15 mm	Not Qualified	9437184 bit	2.4 V		e0	20	225		.01 Amp	15 mm	12 ns
IDT70V3319S133BFI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	480 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX18	256K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e0	20	225		.04 Amp	15 mm	15 ns
IDT70V3389S4BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	460 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	64KX18	64K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-CBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	1179648 bit	3.15 V	PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE	e1	30	260		.015 Amp	15 mm	4.2 ns
71V016SA12BF8	Renesas Electronics	STANDARD SRAM		48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	150 mA	65536 words	COMMON	3.3		16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		.75 mm	70 Cel	3-STATE	64KX16	64K	3.15 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	1	S-PBGA-B48	3	3.6 V	1.4 mm		7 mm		1048576 bit	3.15 V		e0	30	225	YES	.01 Amp	7 mm	12 ns
IDT70V3599S133BFI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	480 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	128KX36	128K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.04 Amp	15 mm	15 ns
IDT70V631S12BFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	515 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX18	256K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm		15 mm	Not Qualified	4718592 bit	3.15 V		e1	30	260		.015 Amp	15 mm	12 ns
IDT70V3319S166BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX18	256K	3.15 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	166 MHz	15 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e0	20	225		.03 Amp	15 mm	12 ns
IDT70V3579S4BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	460 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	32KX36	32K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	1179648 bit	3.15 V	PIPELINED OUTPUT MODE, SELF-TIMED WRITE CYCLE	e1	30	260			15 mm	4.2 ns
IDT70V27L55BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	144	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	180 mA	32768 words	COMMON	3.3	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,13X13,32	SRAMs	.8 mm	70 Cel	3-STATE	32KX16	32K	3 V	0 Cel	MATTE TIN	BOTTOM	2	S-PBGA-B144		3.6 V	1.5 mm		12 mm	Not Qualified	524288 bit	3 V		e3				.003 Amp	12 mm	55 ns
71V016SA12BFG8	Renesas Electronics	STANDARD SRAM		48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	150 mA	65536 words	COMMON	3.3		16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		.75 mm	70 Cel	3-STATE	64KX16	64K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B48	3	3.6 V	1.4 mm		7 mm		1048576 bit	3.15 V		e1	40	260	YES	.01 Amp	7 mm	12 ns
IDT70T651S10BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	405 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX36	256K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.5 mm		15 mm	Not Qualified	9437184 bit	2.4 V		e1	30	260		.01 Amp	15 mm	10 ns
70V631S12BF	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	465 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX18	256K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm		15 mm	Not Qualified	4718592 bit	3.15 V		e0	20	225		.015 Amp	15 mm	12 ns
IDT70V3579S5BFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	415 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	32KX36	32K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	100 MHz	15 mm	Not Qualified	1179648 bit	3.15 V	PIPELINED OUTPUT MODE, SELF-TIMED WRITE CYCLE	e1	30	260			15 mm	5 ns
IDT71V016SA20BFG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	140 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	3 V	0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B48	3	3.6 V	1.34 mm		7 mm	Not Qualified	1048576 bit	3 V		e1	40	260		.01 Amp	7 mm	20 ns
70V631S10BF8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX18	256K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm		15 mm	Not Qualified	4718592 bit	3.15 V		e0	20	225		.015 Amp	15 mm	10 ns
IDT70V3589S133BF8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	64KX36	64K	3.15 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	2359296 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.03 Amp	15 mm	15 ns
UPD4664312-B65X	Renesas Electronics	STANDARD SRAM	OTHER	93	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M		-25 Cel		BOTTOM		R-PBGA-B93		3.1 V	1.4 mm		9 mm		67108864 bit	2.7 V							12 mm	65 ns
IDT70T631S10BFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	445 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX18	256K	2.4 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.5 mm		15 mm	Not Qualified	4718592 bit	2.4 V		e0	20	225		.02 Amp	15 mm	10 ns
IDT70V3319S133BFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	480 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX18	256K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e0	20	225		.04 Amp	15 mm	15 ns
IDT70V3599S133BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1	30	260		.03 Amp	15 mm	15 ns
IDT70V3379S4BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	460 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	32KX18	32K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-CBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE	e1	30	260		.015 Amp	15 mm	4.2 ns
IDT70T3319S133BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	370 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX18	256K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-CBGA-B208	3	2.6 V	1.7 mm	133 MHz	15 mm	Not Qualified	4718592 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e1	30	260		.015 Amp	15 mm	4.2 ns
IDT70T3319S133BFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX18	256K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-CBGA-B208	3	2.6 V	1.7 mm	133 MHz	15 mm	Not Qualified	4718592 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e1	30	260		.02 Amp	15 mm	4.2 ns
IDT70V3599S133BFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	480 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	128KX36	128K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1	30	260		.04 Amp	15 mm	15 ns
IDT70V7599S166BF8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	790 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	166 MHz	15 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e0	20	225		.03 Amp	15 mm	12 ns
IDT71V016SA20BFI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	3.15 V	-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B48	3	3.6 V	1.34 mm		7 mm	Not Qualified	1048576 bit	3 V		e0	30	225		.01 Amp	7 mm	20 ns
70V631S15BF8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	440 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX18	256K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm		15 mm	Not Qualified	4718592 bit	3.15 V		e0	20	225		.015 Amp	15 mm	15 ns
IDT70T651S12BFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	355 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX36	256K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.5 mm		15 mm	Not Qualified	9437184 bit	2.4 V		e1	30	260		.01 Amp	15 mm	12 ns
71V016SA10BFG	Renesas Electronics	STANDARD SRAM		48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	160 mA	65536 words	COMMON	3.3		16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		.75 mm	70 Cel	3-STATE	64KX16	64K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B48	3	3.6 V	1.4 mm		7 mm		1048576 bit	3.15 V		e1	40	260	YES	.01 Amp	7 mm	10 ns
IDT70V631S15BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		256KX18	256K		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B208	3	3.45 V	1.7 mm		15 mm	Not Qualified	4718592 bit	3.15 V		e1					15 mm	15 ns
IDT70V3599S166BFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		128KX36	128K		-40 Cel	MATTE TIN	BOTTOM		S-PBGA-B208		3.45 V	1.7 mm		15 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e3					15 mm	12 ns
IDT70T651S12BFI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	395 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX36	256K	2.4 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.5 mm		15 mm	Not Qualified	9437184 bit	2.4 V		e0	20	225		.02 Amp	15 mm	12 ns
IDT70V3399S166BFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		18	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		128KX18	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-CBGA-B208	3	3.45 V	1.7 mm		15 mm	Not Qualified	2359296 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e1					15 mm	3.6 ns
IDT70T3339S133BFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	524288 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	512KX18	512K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-CBGA-B208	3	2.6 V	1.7 mm	133 MHz	15 mm	Not Qualified	9437184 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e1	30	260		.02 Amp	15 mm	4.2 ns
IDT70T651S10BFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	405 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX36	256K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.5 mm		15 mm	Not Qualified	9437184 bit	2.4 V		e1	30	260		.01 Amp	15 mm	10 ns
71V016SA15BFG8	Renesas Electronics	STANDARD SRAM		48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	3.3		16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		.75 mm	70 Cel	3-STATE	64KX16	64K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B48	3	3.6 V	1.4 mm		7 mm		1048576 bit	3.15 V		e1	40	260	YES	.01 Amp	7 mm	15 ns
71V016SA12BFGI	Renesas Electronics	STANDARD SRAM		48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	160 mA	65536 words	COMMON	3.3		16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		.75 mm	85 Cel	3-STATE	64KX16	64K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B48	3	3.6 V	1.4 mm		7 mm		1048576 bit	3.15 V		e1	40	260	YES	.01 Amp	7 mm	12 ns
IDT70V3599S133BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.03 Amp	15 mm	15 ns
IDT70T631S12BFI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	395 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX18	256K	2.4 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.5 mm		15 mm	Not Qualified	4718592 bit	2.4 V		e0	20	225		.02 Amp	15 mm	12 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.