LFBGA SRAM 526

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
70T633S10BFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	445 mA	524288 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	512KX18	512K	2.4 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.5 mm		15 mm	Not Qualified	9437184 bit	2.4 V		e0	20	225		.02 Amp	15 mm	10 ns
70V3569S4BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	460 mA	16384 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	16KX36	16K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	e1	30	260		.015 Amp	15 mm	4.2 ns
70V3579S4BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	460 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	32KX36	32K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	1179648 bit	3.15 V	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	e1	30	260			15 mm	4.2 ns
70T659S12BFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	395 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	128KX36	128K	2.4 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.5 mm		15 mm	Not Qualified	4718592 bit	2.4 V		e0	20	225		.02 Amp	15 mm	12 ns
70V3599S133BFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	480 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	128KX36	128K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.04 Amp	15 mm	15 ns
70V3599S133BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1	30	260		.03 Amp	15 mm	15 ns
70V9359L7BFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	330 mA	8192 words	COMMON	3.3	3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA100,10X10,32	SRAMs	.5 mm	85 Cel	3-STATE	8KX18	8K	3 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B100	3	3.6 V	1.4 mm		10 mm	Not Qualified	147456 bit	3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e1	30	260		.003 Amp	10 mm	7.5 ns
70V7599S133BF	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	645 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.03 Amp	15 mm	15 ns
70T3599S166BFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	128KX36	128K	2.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.7 mm	166 MHz	15 mm	Not Qualified	4718592 bit	2.4 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1	30	260		.015 Amp	15 mm	12 ns
70V3579S5BFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	415 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	32KX36	32K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	100 MHz	15 mm	Not Qualified	1179648 bit	3.15 V	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	e1	30	260			15 mm	5 ns
70V9169L7BFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	330 mA	16384 words	COMMON	3.3		9	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA100,10X10,32		.8 mm	85 Cel	3-STATE	16KX9	16K	3 V	-40 Cel		BOTTOM	2	S-PBGA-B100		3.6 V	1.5 mm		10 mm		147456 bit	3 V	PIPELINED OR FLOW THROUGH ARCHITECTURE				YES	.003 Amp	10 mm	7.5 ns
70V9349L9BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	230 mA	4096 words	COMMON	3.3	3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA100,10X10,32	SRAMs	.5 mm	70 Cel	3-STATE	4KX18	4K	3 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B100	3	3.6 V	1.4 mm		10 mm	Not Qualified	73728 bit	3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e1	30	260		.003 Amp	10 mm	9 ns
70V9359L9BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	230 mA	8192 words	COMMON	3.3	3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA100,10X10,32	SRAMs	.5 mm	70 Cel	3-STATE	8KX18	8K	3 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B100	3	3.6 V	1.4 mm		10 mm	Not Qualified	147456 bit	3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e1	30	260		.003 Amp	10 mm	9 ns
70V7599S133BF8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	645 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e0	20	225		.03 Amp	15 mm	15 ns
70V3399S133BF8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	128KX18	128K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	2359296 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e0	20	225		.03 Amp	15 mm	15 ns
70V3389S5BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	64KX18	64K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-CBGA-B208	3	3.45 V	1.7 mm	100 MHz	15 mm	Not Qualified	1179648 bit	3.15 V	PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE	e1	30	260		.015 Amp	15 mm	5 ns
70V3589S166BF8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	64KX36	64K	3.15 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	166 MHz	15 mm	Not Qualified	2359296 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.03 Amp	15 mm	12 ns
70T651S12BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	355 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX36	256K	2.4 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.5 mm		15 mm	Not Qualified	9437184 bit	2.4 V		e0	20	225		.01 Amp	15 mm	12 ns
70V3589S133BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	64KX36	64K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	2359296 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1	30	260		.03 Amp	15 mm	15 ns
70V3599S133BFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	480 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	128KX36	128K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1	30	260		.04 Amp	15 mm	15 ns
70T631S12BF8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	355 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX18	256K	2.4 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.5 mm		15 mm	Not Qualified	4718592 bit	2.4 V		e0	20	225		.01 Amp	15 mm	12 ns
70V3579S6BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	310 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	32KX36	32K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	83 MHz	15 mm	Not Qualified	1179648 bit	3.15 V	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	e1	30	260			15 mm	6 ns
70T631S10BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	405 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX18	256K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.7 mm		15 mm	Not Qualified	4718592 bit	2.4 V		e1	30	260		.01 Amp	15 mm	10 ns
70T631S10BFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	445 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX18	256K	2.4 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.5 mm		15 mm	Not Qualified	4718592 bit	2.4 V		e0	20	225		.02 Amp	15 mm	10 ns
70T651S10BF8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	405 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX36	256K	2.4 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.5 mm		15 mm	Not Qualified	9437184 bit	2.4 V		e0	20	225		.01 Amp	15 mm	10 ns
70T633S12BFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	395 mA	524288 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	512KX18	512K	2.4 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.5 mm		15 mm	Not Qualified	9437184 bit	2.4 V		e0	20	225		.02 Amp	15 mm	12 ns
70T651S12BFI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	395 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX36	256K	2.4 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.5 mm		15 mm	Not Qualified	9437184 bit	2.4 V		e0	20	225		.02 Amp	15 mm	12 ns
70T659S10BFI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	445 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	128KX36	128K	2.4 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.5 mm		15 mm	Not Qualified	4718592 bit	2.4 V		e0	20	225		.02 Amp	15 mm	10 ns
70T3319S166BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX18	256K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-CBGA-B208	3	2.6 V	1.7 mm	166 MHz	15 mm	Not Qualified	4718592 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e1	30	260		.015 Amp	15 mm	3.6 ns
70V9169L7BFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	280 mA	16384 words	COMMON	3.3		9	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA100,10X10,32		.8 mm	70 Cel	3-STATE	16KX9	16K	3 V	0 Cel		BOTTOM	2	S-PBGA-B100		3.6 V	1.5 mm		10 mm		147456 bit	3 V	PIPELINED OR FLOW THROUGH ARCHITECTURE				YES	.003 Amp	10 mm	7.5 ns
UPD98421F1-GA5	Renesas Electronics	CONTENT ADDRESSABLE SRAM	COMMERCIAL	240	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	MOS	BALL	PARALLEL	SYNCHRONOUS	1150 mA	8192 words		3.3	3.3	64	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA240,18X18,32	SRAMs	.8 mm	70 Cel		8KX64	8K		0 Cel	TIN LEAD	BOTTOM		S-PBGA-B240		3.45 V	1.38 mm		16 mm	Not Qualified	524288 bit	3.15 V		e0					16 mm	10 ns
70T633S10BFI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	445 mA	524288 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	512KX18	512K	2.4 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.5 mm		15 mm	Not Qualified	9437184 bit	2.4 V		e0	20	225		.02 Amp	15 mm	10 ns
71L016L70BF	Renesas Electronics	STANDARD SRAM	COMMERCIAL	46	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	45 mA	65536 words	COMMON	3	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	1.5 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B46	3	3.6 V	1.4 mm		6.9 mm	Not Qualified	1048576 bit	2.7 V		e0	30	225		.000005 Amp	8.9 mm	70 ns
70V3599S166BFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		128KX36	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B208	3	3.45 V	1.7 mm		15 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1					15 mm	12 ns
70V3569S6BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	310 mA	16384 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	16KX36	16K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	83 MHz	15 mm	Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	e1	30	260		.015 Amp	15 mm	6 ns
70T651S15BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	305 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX36	256K	2.4 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.5 mm		15 mm	Not Qualified	9437184 bit	2.4 V		e0	20	225		.01 Amp	15 mm	15 ns
70V3399S166BF8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	128KX18	128K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	166 MHz	15 mm	Not Qualified	2359296 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e0	20	225		.03 Amp	15 mm	12 ns
70V3569S5BFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	415 mA	16384 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	16KX36	16K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	100 MHz	15 mm	Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	e1	30	260		.03 Amp	15 mm	5 ns
70T633S15BF8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	305 mA	524288 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	512KX18	512K	2.4 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.5 mm		15 mm	Not Qualified	9437184 bit	2.4 V		e0	20	225		.01 Amp	15 mm	15 ns
70T651S12BFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	395 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX36	256K	2.4 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.5 mm		15 mm	Not Qualified	9437184 bit	2.4 V		e0	20	225		.02 Amp	15 mm	12 ns
70V7599S166BF8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	790 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	166 MHz	15 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e0	20	225		.03 Amp	15 mm	12 ns
70T633S12BFI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	395 mA	524288 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	512KX18	512K	2.4 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.5 mm		15 mm	Not Qualified	9437184 bit	2.4 V		e0	20	225		.02 Amp	15 mm	12 ns
70V3399S133BFI	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	480 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	128KX18	128K	3.15 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	133 MHz	15 mm	Not Qualified	2359296 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e0	20	225		.04 Amp	15 mm	15 ns
71L016L70BFI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	46	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	45 mA	65536 words	COMMON	3	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	1.5 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B46	3	3.6 V	1.4 mm		6.9 mm	Not Qualified	1048576 bit	2.7 V		e0	30	225		.00001 Amp	8.9 mm	70 ns
70T631S10BFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	445 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX18	256K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.7 mm		15 mm	Not Qualified	4718592 bit	2.4 V		e1	30	260		.02 Amp	15 mm	10 ns
70T631S15BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	305 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX18	256K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.7 mm		15 mm	Not Qualified	4718592 bit	2.4 V		e1	30	260		.01 Amp	15 mm	15 ns
70V3399S166BFG	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	128KX18	128K	3.15 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-CBGA-B208	3	3.45 V	1.7 mm	166 MHz	15 mm	Not Qualified	2359296 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e1	30	260		.03 Amp	15 mm	3.6 ns
70T631S12BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	355 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX18	256K	2.4 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.5 mm		15 mm	Not Qualified	4718592 bit	2.4 V		e0	20	225		.01 Amp	15 mm	12 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.