Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
200 mA |
4096 words |
COMMON |
2.5 |
2.5 |
18 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA100,10X10,20 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
4KX18 |
4K |
2.4 V |
0 Cel |
TIN LEAD |
BOTTOM |
2 |
S-PBGA-B100 |
3 |
2.6 V |
1.4 mm |
10 mm |
Not Qualified |
73728 bit |
2.4 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
225 |
.003 Amp |
10 mm |
7.5 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
4096 words |
2.5 |
18 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
.8 mm |
70 Cel |
4KX18 |
4K |
0 Cel |
TIN LEAD |
BOTTOM |
S-PBGA-B100 |
3 |
2.6 V |
1.5 mm |
10 mm |
Not Qualified |
73728 bit |
2.4 V |
e0 |
225 |
10 mm |
25 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
8192 words |
2.5 |
8 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
.8 mm |
70 Cel |
8KX8 |
8K |
0 Cel |
TIN LEAD |
BOTTOM |
S-PBGA-B100 |
3 |
2.6 V |
1.4 mm |
10 mm |
Not Qualified |
65536 bit |
2.4 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
225 |
10 mm |
25 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
4096 words |
2.5 |
18 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
.8 mm |
70 Cel |
4KX18 |
4K |
0 Cel |
TIN LEAD |
BOTTOM |
S-PBGA-B100 |
3 |
2.6 V |
1.4 mm |
10 mm |
Not Qualified |
73728 bit |
2.4 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
225 |
10 mm |
9 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
140 mA |
8192 words |
COMMON |
2.5 |
2.5 |
9 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA100,10X10,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
8KX9 |
8K |
2.4 V |
0 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
2 |
S-PBGA-B100 |
3 |
2.6 V |
1.4 mm |
10 mm |
Not Qualified |
73728 bit |
2.4 V |
e0 |
20 |
240 |
.0025 Amp |
10 mm |
20 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
4096 words |
2.5 |
18 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
.8 mm |
70 Cel |
4KX18 |
4K |
0 Cel |
TIN LEAD |
BOTTOM |
S-PBGA-B100 |
3 |
2.6 V |
1.5 mm |
10 mm |
Not Qualified |
73728 bit |
2.4 V |
e0 |
225 |
10 mm |
20 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
4096 words |
2.5 |
18 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
.8 mm |
85 Cel |
4KX18 |
4K |
-40 Cel |
TIN LEAD |
BOTTOM |
S-PBGA-B100 |
3 |
2.6 V |
1.5 mm |
10 mm |
Not Qualified |
73728 bit |
2.4 V |
e0 |
225 |
10 mm |
25 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
220 mA |
4096 words |
COMMON |
2.5 |
2.5 |
18 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA100,10X10,20 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
4KX18 |
4K |
2.4 V |
-40 Cel |
TIN LEAD |
BOTTOM |
2 |
S-PBGA-B100 |
3 |
2.6 V |
1.4 mm |
10 mm |
Not Qualified |
73728 bit |
2.4 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
225 |
.003 Amp |
10 mm |
9 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
8192 words |
2.5 |
8 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
.8 mm |
70 Cel |
8KX8 |
8K |
0 Cel |
TIN LEAD |
BOTTOM |
S-PBGA-B100 |
3 |
2.6 V |
1.4 mm |
10 mm |
Not Qualified |
65536 bit |
2.4 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
225 |
10 mm |
20 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
4096 words |
2.5 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
.8 mm |
70 Cel |
4KX16 |
4K |
0 Cel |
TIN LEAD |
BOTTOM |
S-PBGA-B100 |
3 |
2.6 V |
1.5 mm |
10 mm |
Not Qualified |
65536 bit |
2.4 V |
e0 |
225 |
10 mm |
25 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
160 mA |
16384 words |
COMMON |
2.5 |
2.5 |
9 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA100,10X10,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
16KX9 |
16K |
2.4 V |
-40 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
2 |
S-PBGA-B100 |
3 |
2.6 V |
1.4 mm |
10 mm |
Not Qualified |
147456 bit |
2.4 V |
e0 |
20 |
240 |
.005 Amp |
10 mm |
25 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
4096 words |
2.5 |
18 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
.8 mm |
70 Cel |
4KX18 |
4K |
0 Cel |
TIN LEAD |
BOTTOM |
S-PBGA-B100 |
3 |
2.6 V |
1.4 mm |
10 mm |
Not Qualified |
73728 bit |
2.4 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
225 |
10 mm |
12 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
8192 words |
2.5 |
18 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
.8 mm |
70 Cel |
8KX18 |
8K |
0 Cel |
TIN LEAD |
BOTTOM |
S-PBGA-B100 |
3 |
2.6 V |
1.5 mm |
10 mm |
Not Qualified |
147456 bit |
2.4 V |
e0 |
225 |
10 mm |
25 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
8192 words |
2.5 |
18 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
.8 mm |
70 Cel |
8KX18 |
8K |
0 Cel |
TIN LEAD |
BOTTOM |
S-PBGA-B100 |
3 |
2.6 V |
1.5 mm |
10 mm |
Not Qualified |
147456 bit |
2.4 V |
e0 |
225 |
10 mm |
20 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
200 mA |
8192 words |
COMMON |
2.5 |
2.5 |
18 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA165,11X15,40 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
8KX18 |
8K |
2.4 V |
0 Cel |
TIN LEAD |
BOTTOM |
2 |
S-PBGA-B100 |
3 |
2.6 V |
1.4 mm |
10 mm |
Not Qualified |
147456 bit |
2.4 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
225 |
.003 Amp |
10 mm |
7.5 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
100 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
330 mA |
8192 words |
COMMON |
3.3 |
9 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA100,10X10,32 |
.8 mm |
70 Cel |
3-STATE |
8KX9 |
8K |
3 V |
0 Cel |
BOTTOM |
2 |
S-PBGA-B100 |
3.6 V |
1.5 mm |
10 mm |
73728 bit |
3 V |
PIPELINED OR FLOW THROUGH ARCHITECTURE |
YES |
.003 Amp |
10 mm |
6.5 ns |
|||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
100 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
330 mA |
8192 words |
COMMON |
3.3 |
9 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA100,10X10,32 |
.8 mm |
85 Cel |
3-STATE |
8KX9 |
8K |
3 V |
-40 Cel |
BOTTOM |
2 |
S-PBGA-B100 |
3.6 V |
1.5 mm |
10 mm |
73728 bit |
3 V |
PIPELINED OR FLOW THROUGH ARCHITECTURE |
YES |
.003 Amp |
10 mm |
7.5 ns |
|||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
100 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
330 mA |
8192 words |
COMMON |
3.3 |
9 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA100,10X10,32 |
.8 mm |
70 Cel |
3-STATE |
8KX9 |
8K |
3 V |
0 Cel |
BOTTOM |
2 |
S-PBGA-B100 |
3.6 V |
1.5 mm |
10 mm |
73728 bit |
3 V |
PIPELINED OR FLOW THROUGH ARCHITECTURE |
YES |
.003 Amp |
10 mm |
6.5 ns |
|||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
100 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
280 mA |
8192 words |
COMMON |
3.3 |
9 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA100,10X10,32 |
.8 mm |
70 Cel |
3-STATE |
8KX9 |
8K |
3 V |
0 Cel |
BOTTOM |
2 |
S-PBGA-B100 |
3.6 V |
1.5 mm |
10 mm |
73728 bit |
3 V |
PIPELINED OR FLOW THROUGH ARCHITECTURE |
YES |
.003 Amp |
10 mm |
7.5 ns |
|||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
100 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
230 mA |
8192 words |
COMMON |
3.3 |
9 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA100,10X10,32 |
.8 mm |
70 Cel |
3-STATE |
8KX9 |
8K |
3 V |
0 Cel |
BOTTOM |
2 |
S-PBGA-B100 |
3.6 V |
1.5 mm |
10 mm |
73728 bit |
3 V |
PIPELINED OR FLOW THROUGH ARCHITECTURE |
YES |
.003 Amp |
10 mm |
9 ns |
|||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
100 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
280 mA |
8192 words |
COMMON |
3.3 |
9 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA100,10X10,32 |
.8 mm |
70 Cel |
3-STATE |
8KX9 |
8K |
3 V |
0 Cel |
BOTTOM |
2 |
S-PBGA-B100 |
3.6 V |
1.5 mm |
10 mm |
73728 bit |
3 V |
PIPELINED OR FLOW THROUGH ARCHITECTURE |
YES |
.003 Amp |
10 mm |
7.5 ns |
|||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
100 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
230 mA |
8192 words |
COMMON |
3.3 |
9 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA100,10X10,32 |
.8 mm |
70 Cel |
3-STATE |
8KX9 |
8K |
3 V |
0 Cel |
BOTTOM |
2 |
S-PBGA-B100 |
3.6 V |
1.5 mm |
10 mm |
73728 bit |
3 V |
PIPELINED OR FLOW THROUGH ARCHITECTURE |
YES |
.003 Amp |
10 mm |
9 ns |
|||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
100 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
330 mA |
8192 words |
COMMON |
3.3 |
9 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA100,10X10,32 |
.8 mm |
85 Cel |
3-STATE |
8KX9 |
8K |
3 V |
-40 Cel |
BOTTOM |
2 |
S-PBGA-B100 |
3.6 V |
1.5 mm |
10 mm |
73728 bit |
3 V |
PIPELINED OR FLOW THROUGH ARCHITECTURE |
YES |
.003 Amp |
10 mm |
7.5 ns |
|||||||||||||||||||
Renesas Electronics |
DUAL-PORT SRAM |
COMMERCIAL |
208 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
500 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX18 |
256K |
3.15 V |
0 Cel |
TIN LEAD |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
3.45 V |
1.7 mm |
166 MHz |
15 mm |
Not Qualified |
4718592 bit |
3.15 V |
PIPELINED OR FLOW-THROUGH ARCHITECTURE |
e0 |
20 |
225 |
.03 Amp |
15 mm |
12 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
208 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
500 mA |
131072 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
128KX36 |
128K |
3.15 V |
0 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
3.45 V |
1.7 mm |
166 MHz |
15 mm |
Not Qualified |
4718592 bit |
3.15 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
20 |
225 |
.03 Amp |
15 mm |
12 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
208 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
310 mA |
16384 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
16KX36 |
16K |
3.15 V |
0 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
3.45 V |
1.7 mm |
83 MHz |
15 mm |
Not Qualified |
589824 bit |
3.15 V |
PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE |
e1 |
30 |
260 |
.015 Amp |
15 mm |
6 ns |
|||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
208 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
355 mA |
262144 words |
COMMON |
2.5 |
2.5,2.5/3.3 |
18 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX18 |
256K |
2.4 V |
0 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
2.6 V |
1.7 mm |
15 mm |
Not Qualified |
4718592 bit |
2.4 V |
e1 |
30 |
260 |
.01 Amp |
15 mm |
12 ns |
|||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
208 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
445 mA |
262144 words |
COMMON |
2.5 |
2.5,2.5/3.3 |
36 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
2.4 V |
-40 Cel |
TIN LEAD |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
2.6 V |
1.5 mm |
15 mm |
Not Qualified |
9437184 bit |
2.4 V |
e0 |
20 |
225 |
.02 Amp |
15 mm |
10 ns |
||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
208 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
360 mA |
16384 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
16KX36 |
16K |
3.15 V |
0 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
3.45 V |
1.7 mm |
100 MHz |
15 mm |
Not Qualified |
589824 bit |
3.15 V |
PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE |
e1 |
30 |
260 |
.015 Amp |
15 mm |
5 ns |
|||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
208 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
405 mA |
131072 words |
COMMON |
2.5 |
2.5,2.5/3.3 |
36 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
128KX36 |
128K |
2.4 V |
0 Cel |
TIN LEAD |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
2.6 V |
1.5 mm |
15 mm |
Not Qualified |
4718592 bit |
2.4 V |
e0 |
20 |
225 |
.01 Amp |
15 mm |
10 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
208 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
445 mA |
524288 words |
COMMON |
2.5 |
2.5,2.5/3.3 |
18 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
512KX18 |
512K |
2.4 V |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
2.6 V |
1.7 mm |
15 mm |
Not Qualified |
9437184 bit |
2.4 V |
e1 |
30 |
260 |
.02 Amp |
15 mm |
10 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
208 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
SERIAL |
SYNCHRONOUS |
524288 words |
3.3 |
18 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
.8 mm |
85 Cel |
512KX18 |
512K |
-40 Cel |
BOTTOM |
S-PBGA-B208 |
3.45 V |
1.4 mm |
15 mm |
9437184 bit |
3.15 V |
PIPELINED ARCHITECTURE OR FLOW-THROUGH |
15 mm |
4.2 ns |
||||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
46 |
LFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
35 mA |
65536 words |
COMMON |
3 |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
1.5 V |
-40 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
R-PBGA-B46 |
3 |
3.6 V |
1.4 mm |
6.9 mm |
Not Qualified |
1048576 bit |
2.7 V |
e0 |
30 |
225 |
.00001 Amp |
8.9 mm |
100 ns |
|||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
208 |
LFBGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
400 mA |
131072 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
128KX18 |
128K |
3.15 V |
0 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-CBGA-B208 |
3 |
3.45 V |
1.7 mm |
133 MHz |
15 mm |
Not Qualified |
2359296 bit |
3.15 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e1 |
30 |
260 |
.03 Amp |
15 mm |
4.2 ns |
|||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
208 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
355 mA |
262144 words |
COMMON |
2.5 |
2.5,2.5/3.3 |
36 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
2.4 V |
0 Cel |
TIN LEAD |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
2.6 V |
1.5 mm |
15 mm |
Not Qualified |
9437184 bit |
2.4 V |
e0 |
20 |
225 |
.01 Amp |
15 mm |
12 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
280 mA |
4096 words |
COMMON |
3.3 |
3.3 |
18 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA100,10X10,32 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
4KX18 |
4K |
3 V |
0 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B100 |
3 |
3.6 V |
1.4 mm |
10 mm |
Not Qualified |
73728 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e1 |
30 |
260 |
.003 Amp |
10 mm |
7.5 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
208 |
LFBGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
480 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
256KX18 |
256K |
3.15 V |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-CBGA-B208 |
3 |
3.45 V |
1.7 mm |
133 MHz |
15 mm |
Not Qualified |
4718592 bit |
3.15 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e1 |
30 |
260 |
.04 Amp |
15 mm |
4.2 ns |
|||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
230 mA |
16384 words |
COMMON |
3.3 |
9 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA100,10X10,32 |
.8 mm |
70 Cel |
3-STATE |
16KX9 |
16K |
3 V |
0 Cel |
BOTTOM |
2 |
S-PBGA-B100 |
3.6 V |
1.5 mm |
10 mm |
147456 bit |
3 V |
PIPELINED OR FLOW THROUGH ARCHITECTURE |
YES |
.003 Amp |
10 mm |
9 ns |
||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
208 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
305 mA |
262144 words |
COMMON |
2.5 |
2.5,2.5/3.3 |
18 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX18 |
256K |
2.4 V |
0 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
2.6 V |
1.5 mm |
15 mm |
Not Qualified |
4718592 bit |
2.4 V |
e0 |
20 |
225 |
.01 Amp |
15 mm |
15 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
208 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
405 mA |
524288 words |
COMMON |
2.5 |
2.5,2.5/3.3 |
18 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
2.4 V |
0 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
2.6 V |
1.5 mm |
15 mm |
Not Qualified |
9437184 bit |
2.4 V |
e0 |
20 |
225 |
.01 Amp |
15 mm |
10 ns |
||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
208 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
480 mA |
131072 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
128KX36 |
128K |
3.15 V |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
3.45 V |
1.7 mm |
133 MHz |
15 mm |
Not Qualified |
4718592 bit |
3.15 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e1 |
30 |
260 |
.04 Amp |
15 mm |
15 ns |
|||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
208 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
405 mA |
131072 words |
COMMON |
2.5 |
2.5,2.5/3.3 |
36 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
128KX36 |
128K |
2.4 V |
0 Cel |
TIN LEAD |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
2.6 V |
1.5 mm |
15 mm |
Not Qualified |
4718592 bit |
2.4 V |
e0 |
20 |
225 |
.01 Amp |
15 mm |
10 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
208 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
305 mA |
131072 words |
COMMON |
2.5 |
2.5,2.5/3.3 |
36 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
128KX36 |
128K |
2.4 V |
0 Cel |
TIN LEAD |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
2.6 V |
1.5 mm |
15 mm |
Not Qualified |
4718592 bit |
2.4 V |
e0 |
20 |
225 |
.01 Amp |
15 mm |
15 ns |
||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
208 |
LFBGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
450 mA |
524288 words |
COMMON |
2.5 |
2.5,2.5/3.3 |
18 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
512KX18 |
512K |
2.4 V |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-CBGA-B208 |
3 |
2.6 V |
1.7 mm |
133 MHz |
15 mm |
Not Qualified |
9437184 bit |
2.4 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e1 |
30 |
260 |
.02 Amp |
15 mm |
4.2 ns |
|||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
208 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
480 mA |
65536 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
64KX36 |
64K |
3.15 V |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
3.45 V |
1.7 mm |
133 MHz |
15 mm |
Not Qualified |
2359296 bit |
3.15 V |
PIPELINED OR FLOW-THROUGH ARCHITECTURE |
e1 |
30 |
260 |
.04 Amp |
15 mm |
15 ns |
|||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
208 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
SERIAL |
SYNCHRONOUS |
262144 words |
3.3 |
18 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
.8 mm |
70 Cel |
256KX18 |
256K |
0 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B208 |
3 |
3.45 V |
1.4 mm |
15 mm |
4718592 bit |
3.15 V |
e1 |
15 mm |
4.2 ns |
|||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
208 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
405 mA |
262144 words |
COMMON |
2.5 |
2.5,2.5/3.3 |
18 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX18 |
256K |
2.4 V |
0 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
2.6 V |
1.5 mm |
15 mm |
Not Qualified |
4718592 bit |
2.4 V |
e0 |
20 |
225 |
.01 Amp |
15 mm |
10 ns |
||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
208 |
LFBGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
450 mA |
524288 words |
COMMON |
2.5 |
2.5,2.5/3.3 |
18 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
2.4 V |
0 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-CBGA-B208 |
3 |
2.6 V |
1.7 mm |
166 MHz |
15 mm |
Not Qualified |
9437184 bit |
2.4 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e1 |
30 |
260 |
.015 Amp |
15 mm |
3.6 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.