SQUARE SRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
7143SA35GG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	295 mA	2048 words		5		16	GRID ARRAY			2.54 mm	70 Cel		2KX16	2K		0 Cel		PERPENDICULAR		S-CPGA-P68		5.5 V			29.464 mm		32768 bit	4.5 V							29.464 mm	35 ns
7052S35GGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	108	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535 Class Q	PIN/PEG	PARALLEL	ASYNCHRONOUS		2048 words		5		8	GRID ARRAY			2.54 mm	125 Cel		2KX8	2K		-55 Cel		PERPENDICULAR		S-CPGA-P108		5.5 V	5.207 mm		30.48 mm		16384 bit	4.5 V							30.48 mm	35 ns
70261L25PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		16384 words		5		16	FLATPACK				70 Cel		16KX16	16K		0 Cel		QUAD		S-PQFP-G100		5.5 V					262144 bit	4.5 V								25 ns
7024S20PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	370 mA	4096 words		5		16	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	85 Cel		4KX16	4K		-40 Cel	MATTE TIN	QUAD		S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	65536 bit	4.5 V		e3					14 mm	20 ns
7143LA25GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	220 mA	2048 words		5		16	GRID ARRAY				70 Cel		2KX16	2K		0 Cel		PERPENDICULAR		S-CPGA-P68		5.5 V					32768 bit	4.5 V								25 ns
7006S15GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	310 mA	16384 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	4.5 V	0 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P68		5.5 V				Not Qualified	131072 bit	4.5 V		e3				.015 Amp		15 ns
7143SA70PFGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	310 mA	2048 words		5		16	FLATPACK			.5 mm	125 Cel		2KX16	2K		-55 Cel		QUAD		S-PQFP-G100		5.5 V			14 mm		32768 bit	4.5 V							14 mm	70 ns
70T659S12BC8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	355 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	2.4 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm		17 mm	Not Qualified	4718592 bit	2.4 V		e0	20	225		.01 Amp	17 mm	12 ns
70V3379S5BCI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	415 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	32KX18	32K	3.15 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.5 mm	100 MHz	17 mm	Not Qualified	589824 bit	3.15 V		e0	20	225		.03 Amp	17 mm	5 ns
70V3569S6BCG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	310 mA	16384 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	16KX36	16K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.7 mm	83 MHz	17 mm	Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	e1	30	260		.015 Amp	17 mm	6 ns
7024S70FGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS		4096 words		5		16	FLATPACK				125 Cel		4KX16	4K		-55 Cel		QUAD		S-PQFP-G84		5.5 V					65536 bit	4.5 V								70 ns
7024L35JGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class B	J BEND	PARALLEL	ASYNCHRONOUS		4096 words		5		16	CHIP CARRIER			2.54 mm	125 Cel		4KX16	4K		-55 Cel	MATTE TIN	QUAD		S-PQCC-J84		5.5 V	4.572 mm		29.3116 mm	Not Qualified	65536 bit	4.5 V		e3					29.3116 mm	35 ns
70V3379S6BF	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	310 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	32KX18	32K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	3.45 V		83 MHz		Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE	e0	20	225		.015 Amp		6 ns
70T631S15BC8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	305 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	256KX18	256K	2.4 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm		17 mm	Not Qualified	4718592 bit	2.4 V		e0	20	225		.01 Amp	17 mm	15 ns
7052L25GGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	108	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535 Class Q	PIN/PEG	PARALLEL	ASYNCHRONOUS		2048 words		5		8	GRID ARRAY			2.54 mm	125 Cel		2KX8	2K		-55 Cel		PERPENDICULAR		S-CPGA-P108		5.5 V	5.207 mm		30.48 mm		16384 bit	4.5 V							30.48 mm	25 ns
5962-8700206TA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	160 mA	2048 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F48		5.5 V	2.7432 mm		19.05 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0			YES	.004 Amp	19.05 mm	90 ns
7052L35G	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	108	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	250 mA	2048 words	COMMON	5	5	8	GRID ARRAY	PGA108,12X12	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	TIN LEAD	PERPENDICULAR	4	S-CPGA-P108	1	5.5 V	5.207 mm		30.48 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN; BATTERY BACKUP	e0		240		.0006 Amp	30.48 mm	35 ns
70V34S15PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4096 words		3.3		18	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		4KX18	4K		0 Cel	MATTE TIN	QUAD		S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	73728 bit	3 V		e3					14 mm	15 ns
7025S25GGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535 Class Q	PIN/PEG	PARALLEL	ASYNCHRONOUS	330 mA	8192 words		5		16	GRID ARRAY			2.54 mm	125 Cel		8KX16	8K		-55 Cel		PERPENDICULAR		S-CPGA-P84		5.5 V			27.94 mm		131072 bit	4.5 V							27.94 mm	25 ns
7007L35GI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	295 mA	32768 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68		5.5 V	5.207 mm		29.464 mm	Not Qualified	262144 bit	4.5 V		e0				.01 Amp	29.464 mm	35 ns
7024L17JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	260 mA	4096 words	COMMON	5	5	16	CHIP CARRIER	LDCC84,1.2SQ	SRAMs	2.54 mm	70 Cel	3-STATE	4KX16	4K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J84	3	5.5 V	4.572 mm		29.3116 mm	Not Qualified	65536 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3	40	260		.0015 Amp	29.3116 mm	17 ns
7024S55GGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	325 mA	4096 words		5		16	GRID ARRAY			2.54 mm	85 Cel		4KX16	4K		-40 Cel	MATTE TIN	PERPENDICULAR		S-CPGA-P84		5.5 V	5.207 mm		27.94 mm	Not Qualified	65536 bit	4.5 V		e3					27.94 mm	55 ns
70V7519S166BCG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY				70 Cel		256KX36	256K		0 Cel		BOTTOM		S-PBGA-B256		3.45 V					9437184 bit	3.15 V	PIPELINED OR FLOW THROUGH ARCHITECTURE							3.6 ns
70T3539MS133BCG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	740 mA	524288 words	COMMON		2.5,2.5/3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3			133 MHz		Not Qualified	18874368 bit			e1	30	260		.02 Amp		15 ns
70V7599S200DR	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, FINE PITCH			.5 mm	70 Cel		128KX36	128K		0 Cel	TIN LEAD	QUAD		S-PQFP-G208	3	3.45 V	4.1 mm		28 mm	Not Qualified	4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0					28 mm	10 ns
7143SA70JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCN	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		16	CHIP CARRIER				70 Cel		2KX16	2K		0 Cel		QUAD		S-PQCC-N68		5.5 V					32768 bit	4.5 V								70 ns
5962-8687522YX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		1024 words		5		8	CHIP CARRIER			1.016 mm	125 Cel		1KX8	1K		-55 Cel	TIN LEAD	QUAD		S-XQCC-N48		5.5 V	3.18 mm		14.3002 mm	Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0					14.3002 mm	35 ns
70V7339S166BFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	790 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	512KX18	512K	3.15 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.2 mm	166 MHz	15 mm	Not Qualified	9437184 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e1	30	260		.03 Amp	15 mm	12 ns
7143LA20JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCN	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	280 mA	2048 words	COMMON	5	5	16	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX16	2K	2 V	0 Cel	Matte Tin (Sn)	QUAD	2	S-PQCC-N68	3	5.5 V				Not Qualified	32768 bit	4.5 V		e3	NOT SPECIFIED	260		.0015 Amp		20 ns
70T3539MS133BCGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	900 mA	524288 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	512KX36	512K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V		133 MHz		Not Qualified	18874368 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e1	30	260		.025 Amp		15 ns
5962-8866513ZA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	PIN/PEG	PARALLEL	ASYNCHRONOUS	290 mA	2048 words	COMMON	5	5	16	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	2KX16	2K	2 V	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68	1	5.5 V	5.207 mm		29.464 mm	Not Qualified	32768 bit	4.5 V	ARBITER	e0		240	YES	.004 Amp	29.464 mm	45 ns
70V3389S4BC8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	460 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	64KX18	64K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.5 mm	133 MHz	17 mm	Not Qualified	1179648 bit	3.15 V		e0	20	225		.015 Amp	17 mm	4.2 ns
7024S35PFGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class B	GULL WING	PARALLEL	ASYNCHRONOUS		4096 words		5		16	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	125 Cel		4KX16	4K		-55 Cel	MATTE TIN	QUAD		S-PQFP-G100		5.5 V	1.6 mm		14 mm	Not Qualified	65536 bit	4.5 V		e3					14 mm	35 ns
7143SA70PF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	280 mA	2048 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	2KX16	2K	2 V	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	32768 bit	4.5 V		e0	20	240		.0015 Amp	14 mm	70 ns
5962-8700202UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER			1.016 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-CQCC-N52		5.5 V	4.58 mm		14.3002 mm	Not Qualified	16384 bit	4.5 V		e0					14.3002 mm	90 ns
7143LA55GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	285 mA	2048 words		5		16	GRID ARRAY				125 Cel		2KX16	2K		-55 Cel		PERPENDICULAR		S-CPGA-P68		5.5 V					32768 bit	4.5 V								55 ns
7035S15PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words		5		18	FLATPACK				70 Cel		8KX18	8K		0 Cel		QUAD		S-PQFP-G100		5.5 V					147456 bit	4.5 V								15 ns
7026S35GI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	335 mA	16384 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	85 Cel	3-STATE	16KX16	16K	4.5 V	-40 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P84		5.5 V				Not Qualified	262144 bit	4.5 V		e0				.03 Amp		35 ns
7143LA55PFGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	285 mA	2048 words		5		16	FLATPACK			.5 mm	125 Cel		2KX16	2K		-55 Cel		QUAD		S-PQFP-G100		5.5 V			14 mm		32768 bit	4.5 V							14 mm	55 ns
70T631S10BFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	445 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX18	256K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	2.6 V				Not Qualified	4718592 bit	2.4 V		e1	30	260		.02 Amp		10 ns
7025S15JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	310 mA	8192 words		5		16	CHIP CARRIER			1.27 mm	70 Cel		8KX16	8K		0 Cel		QUAD		S-PQCC-J84		5.5 V			29.3116 mm		131072 bit	4.5 V							29.3116 mm	15 ns
7052S25PFB	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	120	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS	38535Q/M;38534H;883B	GULL WING	PARALLEL	ASYNCHRONOUS	360 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP120,.63SQ,16	SRAMs	.4 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	QUAD	4	S-PQFP-G120	4					Not Qualified	16384 bit			e0	30	240		.03 Amp		25 ns
70V3379S6BCG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	310 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	32KX18	32K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.7 mm	83 MHz	17 mm	Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE	e1	30	260		.015 Amp	17 mm	6 ns
70V3389S6BCGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	360 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	64KX18	64K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.5 mm	83 MHz	17 mm	Not Qualified	1179648 bit	3.15 V	PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE	e1	30	260		.03 Amp	17 mm	6 ns
70V05L15PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	185 mA	8192 words	COMMON	3.3	3.3	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32	SRAMs	.8 mm	70 Cel	3-STATE	8KX8	8K	3 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	3.6 V	1.6 mm		14 mm	Not Qualified	65536 bit	3 V		e3	30	260		.0025 Amp	14 mm	15 ns
70V9089S9PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	270 mA	65536 words	COMMON	3.3	3.3	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	64KX8	64K	3 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	3.6 V	1.4 mm	66.7 MHz	14 mm	Not Qualified	524288 bit	3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3	30	260		.005 Amp	14 mm	9 ns
7006L15G	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	260 mA	16384 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	2 V	0 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68		5.5 V				Not Qualified	131072 bit	4.5 V		e0				.0015 Amp		15 ns
7026S35GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS		16384 words		5		16	GRID ARRAY				125 Cel		16KX16	16K		-55 Cel		PERPENDICULAR		S-CPGA-P84		5.5 V					262144 bit	4.5 V								35 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.