SQUARE SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
70V9079S15PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	220 mA	32768 words	COMMON	3.3	3.3	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	32KX8	32K	3 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	3.6 V	1.4 mm	40 MHz	14 mm	Not Qualified	262144 bit	3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3	30	260		.005 Amp	14 mm	15 ns
7024S70FGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	4096 words	COMMON	5	5	16	FLATPACK	QFL84,1.2SQ	SRAMs	1.27 mm	125 Cel	3-STATE	4KX16	4K	4.5 V	-55 Cel	MATTE TIN	QUAD	2	S-PQFP-G84		5.5 V				Not Qualified	65536 bit	4.5 V		e3				.00003 Amp		70 ns
5962-8866516UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		2048 words		5		16	FLATPACK			1.27 mm	125 Cel		2KX16	2K		-55 Cel	TIN LEAD	QUAD		S-XQFP-F68		5.5 V	3.05 mm		24 mm	Qualified	32768 bit	4.5 V		e0					24.08 mm	35 ns
5962-8976404MYA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS	220 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	125 Cel	3-STATE	4KX8	4K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48	1	5.5 V	3.048 mm		14.3002 mm	Qualified	32768 bit	4.5 V		e0		240	YES	.004 Amp	14.3002 mm	55 ns
70V7599S200BC8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	950 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.7 mm	200 MHz	17 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e0	20	225		.03 Amp	17 mm	10 ns
70V9089S9PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		8	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		64KX8	64K		0 Cel	MATTE TIN	QUAD		S-PQFP-G100		3.6 V	1.4 mm		14 mm		524288 bit	3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3					14 mm	9 ns
7143LA55FGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		2048 words		5		16	FLATPACK				85 Cel		2KX16	2K		-40 Cel		QUAD		S-PQFP-F68		5.5 V					32768 bit	4.5 V								55 ns
7143LA55JI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	285 mA	2048 words	COMMON	5	5	16	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	85 Cel	3-STATE	2KX16	2K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm		24.2062 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.004 Amp	24.2062 mm	55 ns
7006L20G	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	SPGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	240 mA	16384 words	COMMON	5	5	8	GRID ARRAY, SHRINK PITCH	PGA68,11X11	SRAMs	1.27 mm	70 Cel	3-STATE	16KX8	16K	2 V	0 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68	1	5.5 V	5.207 mm		29.464 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0		240		.0015 Amp	29.464 mm	20 ns
7025S55GG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	285 mA	8192 words		5		16	GRID ARRAY			2.54 mm	70 Cel		8KX16	8K		0 Cel		PERPENDICULAR		S-CPGA-P84		5.5 V			27.94 mm		131072 bit	4.5 V							27.94 mm	55 ns
70V9099L6PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	280 mA	131072 words	COMMON	3.3	3.3	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm	100 MHz	14 mm	Not Qualified	1048576 bit	3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3	30	260		.002 Amp	14 mm	15 ns
70V9089S12PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		8	FLATPACK				85 Cel		64KX8	64K		-40 Cel		QUAD		S-PQFP-G100		3.6 V					524288 bit	3 V								12 ns
7027S20PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		16	FLATPACK				70 Cel		32KX16	32K		0 Cel		QUAD		S-PQFP-G100		5.5 V					524288 bit	4.5 V								20 ns
70T659S12BCI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	395 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	128KX36	128K	2.4 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm		17 mm	Not Qualified	4718592 bit	2.4 V		e0	20	225		.02 Amp	17 mm	12 ns
70V3389S6BFI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	208	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	360 mA	65536 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX18	64K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3			83 MHz		Not Qualified	1179648 bit			e0	20	225		.03 Amp		6 ns
7052S25PFGM	Renesas Electronics	APPLICATION SPECIFIC SRAM	MILITARY	120	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	360 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP120,.63SQ,16	SRAMs	.4 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	MATTE TIN	QUAD	4	S-PQFP-G120	3					Not Qualified	16384 bit			e3				.03 Amp		25 ns
70P259L90BYI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	100	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	60 mA	8192 words	COMMON	1.8	1.8/3	16	GRID ARRAY	BGA100,10X10,20	SRAMs	.5 mm	85 Cel	3-STATE	8KX16	8K		-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B100		1.9 V				Not Qualified	131072 bit	1.7 V	IT ALSO OPERATES AT SUPPLY VOLTAGE 2.5 V AND 3 V NOMINAL	e0				.006 Amp		90 ns
7026L55JGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		16	CHIP CARRIER				85 Cel		16KX16	16K		-40 Cel		QUAD		S-PQCC-J84		5.5 V					262144 bit	4.5 V								55 ns
7024L35PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4096 words		5		16	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		4KX16	4K		0 Cel	MATTE TIN	QUAD		S-PQFP-G100		5.5 V	1.6 mm		14 mm		65536 bit	4.5 V		e3					14 mm	35 ns
70V7319S133BCG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY				70 Cel		256KX18	256K		0 Cel		BOTTOM		S-PBGA-B256		3.45 V					4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE							4.2 ns
70V07S25JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCN	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	CHIP CARRIER			1.27 mm	70 Cel		32KX8	32K		0 Cel	MATTE TIN	QUAD		S-PQCC-N68		3.6 V	4.572 mm		24.2062 mm	Not Qualified	262144 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3					24.2062 mm	25 ns
7006L17FG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	260 mA	16384 words		5		8	CHIP CARRIER			1.27 mm	70 Cel		16KX8	16K		0 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V			24.2062 mm		131072 bit	4.5 V		e3					24.2062 mm	17 ns
70T3339S133BFI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	450 mA	524288 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	512KX18	512K	2.4 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.2 mm	133 MHz	15 mm	Not Qualified	9437184 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.02 Amp	15 mm	15 ns
70V05L20JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCN	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	175 mA	8192 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	3 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-N68	1	3.6 V	4.572 mm		24.2062 mm	Not Qualified	65536 bit	3 V		e3	30	260		.0025 Amp	24.2062 mm	20 ns
70T3719MS133BBGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	324	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		72	GRID ARRAY				85 Cel		256KX72	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B324		2.6 V					18874368 bit	2.4 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1						15 ns
70V7319S133BCG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY				70 Cel		256KX18	256K		0 Cel		BOTTOM		S-PBGA-B256		3.45 V					4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE							4.2 ns
7006S55GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	300 mA	16384 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	4.5 V	-55 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P68		5.5 V	2.413 mm		27.889 mm	Not Qualified	131072 bit	4.5 V		e3				.03 Amp	27.889 mm	55 ns
7007L35PFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	80	QFP	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38535 Class Q	GULL WING	PARALLEL	ASYNCHRONOUS	295 mA	32768 words	COMMON	5	5	8	FLATPACK	QFP80,.64SQ	SRAMs	.65 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-XQFP-G80	3	5.5 V	1.6 mm		14 mm	Not Qualified	262144 bit	4.5 V		e3	30	260		.01 Amp	14 mm	35 ns
7027S35G	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	108	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	295 mA	32768 words	COMMON	5	5	16	GRID ARRAY	PGA108,12X12	SRAMs	2.54 mm	70 Cel	3-STATE	32KX16	32K	4.5 V	0 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P108	1	5.5 V				Not Qualified	524288 bit	4.5 V		e0		240		.005 Amp		35 ns
70V3579S5BCGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	415 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	32KX36	32K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V		100 MHz		Not Qualified	1179648 bit	3.15 V	PIPELINED ARCHITECTURE	e1	30	260				5 ns
7006S55GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	250 mA	16384 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	4.5 V	0 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P68		5.5 V	2.413 mm		27.889 mm	Not Qualified	131072 bit	4.5 V		e3				.015 Amp	27.889 mm	55 ns
7143SA90FGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	310 mA	2048 words		5		16	FLATPACK			1.27 mm	125 Cel		2KX16	2K		-55 Cel		QUAD		S-PQFP-F68		5.5 V			24.0792 mm		32768 bit	4.5 V							24.0792 mm	90 ns
70T659S12BCI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	395 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	128KX36	128K	2.4 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm		17 mm	Not Qualified	4718592 bit	2.4 V		e0	20	225		.02 Amp	17 mm	12 ns
70T633S10BCG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	405 mA	524288 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	512KX18	512K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.7 mm		17 mm	Not Qualified	9437184 bit	2.4 V		e1	30	260		.01 Amp	17 mm	10 ns
7006S70PFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	64	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	16384 words	COMMON	5	5	8	FLATPACK	QFP64,.6SQ,32	SRAMs	.8 mm	125 Cel	3-STATE	16KX8	16K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V				Not Qualified	131072 bit	4.5 V		e3	30	260		.03 Amp		70 ns
7014S25PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4096 words		5		9	FLATPACK, LOW PROFILE			.8 mm	85 Cel		4KX9	4K		-40 Cel	MATTE TIN	QUAD		S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	36864 bit	4.5 V		e3					14 mm	25 ns
7024S35PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4096 words		5		16	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		4KX16	4K		0 Cel		QUAD		S-PQFP-G100		5.5 V	1.6 mm		14 mm		65536 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			14 mm	35 ns
70V06S20JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		3.3		8	CHIP CARRIER			1.27 mm	70 Cel		16KX8	16K		0 Cel	MATTE TIN	QUAD		S-PQCC-J68		3.6 V	4.57 mm		24.2062 mm	Not Qualified	131072 bit	3 V		e3					24.2062 mm	20 ns
70V7319S166BF8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	208	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	790 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA208,17X17,50	SRAMs	.8 mm	70 Cel	3-STATE	256KX18	256K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.2 mm	166 MHz	15 mm	Not Qualified	4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.03 Amp	15 mm	12 ns
5962-8687506UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		1024 words		5		8	FLATPACK			1.27 mm	125 Cel		1KX8	1K		-55 Cel	TIN LEAD	QUAD		S-XQFP-F48		5.5 V	2.74 mm		19.05 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0					19.05 mm	70 ns
7143LA70GGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	280 mA	2048 words		5		16	GRID ARRAY			2.54 mm	125 Cel		2KX16	2K		-55 Cel		PERPENDICULAR		S-CPGA-P68		5.5 V			29.464 mm		32768 bit	4.5 V							29.464 mm	70 ns
5962-8687503YA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	230 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48	1	5.5 V	3.048 mm		14.3002 mm	Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0		240	YES	.03 Amp	14.3002 mm	55 ns
7026L35GGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		16384 words		5		16	GRID ARRAY				85 Cel		16KX16	16K		-40 Cel		PERPENDICULAR		S-CPGA-P84		5.5 V					262144 bit	4.5 V								35 ns
7026S20GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS		16384 words		5		16	GRID ARRAY				125 Cel		16KX16	16K		-55 Cel		PERPENDICULAR		S-CPGA-P84		5.5 V					262144 bit	4.5 V								20 ns
7024L15JG8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	260 mA	4096 words	COMMON	5	5	16	CHIP CARRIER	LDCC84,1.2SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX16	4K	2 V	0 Cel	Matte Tin (Sn)	QUAD	2	S-PQCC-J84	3	5.5 V	4.57 mm		29.3116 mm	Not Qualified	65536 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3	NOT SPECIFIED	260		.0015 Amp	29.3116 mm	15 ns
7026S20JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		16	CHIP CARRIER				70 Cel		16KX16	16K		0 Cel		QUAD		S-PQCC-J84		5.5 V					262144 bit	4.5 V								20 ns
70T3599S133BCG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	370 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V		133 MHz		Not Qualified	4718592 bit	2.4 V		e1	30	260		.015 Amp		4.2 ns
70V05S20JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCN	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	200 mA	8192 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	3 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-N68	1	3.6 V	4.572 mm		24.2062 mm	Not Qualified	65536 bit	3 V		e3	30	260		.005 Amp	24.2062 mm	20 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.