SQUARE SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
70T3519S133BFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	450 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX36	256K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.7 mm	133 MHz	15 mm	Not Qualified	9437184 bit	2.4 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1	30	260		.02 Amp	15 mm	15 ns
70V08S25PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		8	FLATPACK				70 Cel		64KX8	64K		0 Cel		QUAD		S-PQFP-G100		3.6 V					524288 bit	3 V								25 ns
709159L7PF	Renesas Electronics	MULTI-PORT SRAM		100		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	400 mA	8192 words	COMMON	5		9					70 Cel	3-STATE	8KX9	8K	4.5 V	0 Cel		QUAD	2	S-PQFP-G100		5.5 V					73728 bit	4.5 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE				YES	.003 Amp		7.5 ns
70P254L40BYI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	81	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	COMMON	1.8	1.8	16	GRID ARRAY	BGA81,9X9,20	SRAMs	.5 mm	85 Cel	3-STATE	8KX16	8K		-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B81		1.9 V				Not Qualified	131072 bit	1.7 V		e0				.000006 Amp		40 ns
70V9369L12PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		FLAT	PARALLEL	SYNCHRONOUS		16384 words		3.3		18	FLATPACK			.5 mm	70 Cel		16KX18	16K		0 Cel	MATTE TIN	QUAD		S-PQFP-F100	3	3.6 V	1.6 mm		14 mm	Not Qualified	294912 bit	3 V		e3					14 mm
7024S35JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class B	J BEND	PARALLEL	ASYNCHRONOUS	300 mA	4096 words	COMMON	5	5	16	CHIP CARRIER	LDCC84,1.2SQ	SRAMs	2.54 mm	125 Cel	3-STATE	4KX16	4K	4.5 V	-55 Cel	MATTE TIN	QUAD	2	S-PQCC-J84	3	5.5 V	4.572 mm		29.3116 mm	Not Qualified	65536 bit	4.5 V		e3	40	260		.00003 Amp	29.3116 mm	35 ns
70V06L20PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		16384 words		3.3		8	FLATPACK, LOW PROFILE			.8 mm	70 Cel		16KX8	16K		0 Cel	MATTE TIN	QUAD		S-PQFP-G64	3	3.6 V	1.6 mm		14 mm	Not Qualified	131072 bit	3 V		e3					14 mm	20 ns
70V3389S5BCI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	415 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	64KX18	64K	3.15 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.5 mm	100 MHz	17 mm	Not Qualified	1179648 bit	3.15 V		e0	20	225		.03 Amp	17 mm	5 ns
70125S35JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	2048 words	COMMON	5	5	9	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX9	2K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V				Not Qualified	18432 bit	4.5 V		e3	30	260		.015 Amp		35 ns
7007S55JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	J BEND	PARALLEL	ASYNCHRONOUS	310 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	PGA68,11X11	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm		24.2062 mm	Not Qualified	262144 bit	4.5 V		e3	30	260		.03 Amp	24.2062 mm	55 ns
70V06S35GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		16384 words		3.3		8	GRID ARRAY			2.54 mm	70 Cel		16KX8	16K		0 Cel	MATTE TIN	PERPENDICULAR		S-CPGA-P68		3.6 V	5.207 mm		29.464 mm	Not Qualified	131072 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3					29.464 mm	35 ns
7006S55JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	285 mA	16384 words		5		8	CHIP CARRIER			1.27 mm	70 Cel		16KX8	16K		0 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V	4.572 mm		24.2062 mm		131072 bit	4.5 V		e3					24.2062 mm	55 ns
7006S15JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	310 mA	16384 words		5		8	CHIP CARRIER			1.27 mm	70 Cel		16KX8	16K		0 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V	4.572 mm		24.2062 mm		131072 bit	4.5 V		e3					24.2062 mm	15 ns
70V9179L12PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		9	FLATPACK				70 Cel		32KX9	32K		0 Cel		QUAD		S-PQFP-G100		3.6 V					294912 bit	3 V			NOT SPECIFIED	NOT SPECIFIED				12 ns
5962-8976403MYA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS	270 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	125 Cel	3-STATE	4KX8	4K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48	1	5.5 V	3.048 mm		14.3002 mm	Qualified	32768 bit	4.5 V		e0		240	YES	.03 Amp	14.3002 mm	55 ns
5962-9150805MYA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS	400 mA	16384 words	COMMON	5	5	8	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F68		5.5 V	3.683 mm		24.0792 mm	Qualified	131072 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE	e0			YES	.03 Amp	24.0792 mm	45 ns
7143SA20G	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	310 mA	2048 words	COMMON	5	5	16	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	2KX16	2K	2 V	0 Cel	Tin/Lead (Sn/Pb)	PERPENDICULAR	2	S-CPGA-P68	1	5.5 V	3.683 mm		29.464 mm	Not Qualified	32768 bit	4.5 V		e0	NOT SPECIFIED	240		.015 Amp	29.464 mm	20 ns
7007S55PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	80	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	270 mA	32768 words	COMMON	5	5	8	FLATPACK	QFP80,.64SQ	SRAMs	.65 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G80	3	5.5 V	1.6 mm		14 mm	Not Qualified	262144 bit	4.5 V		e3	30	260		.015 Amp	14 mm	55 ns
7007S35GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	295 mA	32768 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	MATTE TIN	PERPENDICULAR	2	S-PPGA-P68		5.5 V	3.683 mm		29.464 mm	Not Qualified	262144 bit	4.5 V		e3				.015 Amp	29.464 mm	35 ns
7035S20PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words		5		18	FLATPACK				70 Cel		8KX18	8K		0 Cel		QUAD		S-PQFP-G100		5.5 V					147456 bit	4.5 V								20 ns
7006L20PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	240 mA	16384 words	COMMON	5	5	8	FLATPACK	QFP64,.6SQ,32	SRAMs	.8 mm	70 Cel	3-STATE	16KX8	16K	2 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	131072 bit	4.5 V		e3	30	260		.0015 Amp	14 mm	20 ns
5962-8866513UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		2048 words		5		16	FLATPACK			1.27 mm	125 Cel		2KX16	2K		-55 Cel	TIN LEAD	QUAD		S-XQFP-F68		5.5 V	3.05 mm		24 mm	Not Qualified	32768 bit	4.5 V		e0					24.08 mm	45 ns
70T633S10BFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	445 mA	524288 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	512KX18	512K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	2.6 V				Not Qualified	9437184 bit	2.4 V		e1	30	260		.02 Amp		10 ns
7006L55JI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	16384 words	COMMON	5	5	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	85 Cel	3-STATE	16KX8	16K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm		24.2062 mm	Not Qualified	131072 bit	4.5 V		e0	20	225		.004 Amp	24.2062 mm	55 ns
70T3589S166BC	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	450 mA	65536 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	64KX36	64K	2.4 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm	166 MHz	17 mm	Not Qualified	2359296 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.015 Amp	17 mm	12 ns
7026L25GI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	305 mA	16384 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	85 Cel	3-STATE	16KX16	16K	4.5 V	-40 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P84		5.5 V				Not Qualified	262144 bit	4.5 V		e0				.01 Amp		25 ns
7025L35GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535 Class Q	PIN/PEG	PARALLEL	ASYNCHRONOUS	295 mA	8192 words		5		16	GRID ARRAY			2.54 mm	125 Cel		8KX16	8K		-55 Cel		PERPENDICULAR		S-CPGA-P84		5.5 V			27.94 mm		131072 bit	4.5 V							27.94 mm	35 ns
7025S20GG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	290 mA	8192 words		5		16	GRID ARRAY			2.54 mm	70 Cel		8KX16	8K		0 Cel		PERPENDICULAR		S-CPGA-P84		5.5 V			27.94 mm		131072 bit	4.5 V							27.94 mm	20 ns
5962-9150803MXA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	PIN/PEG	PARALLEL	ASYNCHRONOUS	395 mA	16384 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	4.5 V	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68	1	5.5 V	5.207 mm		29.464 mm	Qualified	131072 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE	e0		240	YES	.03 Amp	29.464 mm	55 ns
5962-9161702MYA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	DFP	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS	330 mA	8192 words	COMMON	5	5	16	FLATPACK	QFL84,1.2SQ	SRAMs	1.27 mm	125 Cel	3-STATE	8KX16	8K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F84	1	5.5 V	3.56 mm		29.21 mm	Qualified	131072 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE	e0		240	YES	.004 Amp	29.21 mm	70 ns
70V06L25PFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		16384 words		3.3		8	FLATPACK, LOW PROFILE			.8 mm	85 Cel		16KX8	16K		-40 Cel	MATTE TIN	QUAD		S-PQFP-G64	3	3.6 V	1.6 mm		14 mm	Not Qualified	131072 bit	3 V	LOW POWER STANDBY; BATTERY BACK UP	e3					14 mm	25 ns
7024S20GGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		4096 words		5		16	GRID ARRAY			2.54 mm	85 Cel		4KX16	4K		-40 Cel	MATTE TIN	PERPENDICULAR		S-CPGA-P84		5.5 V	5.207 mm		27.94 mm		65536 bit	4.5 V		e3					27.94 mm	20 ns
70V7319S166BCG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		S-PBGA-B256		3.45 V	1.4 mm		17 mm		4718592 bit	3.15 V							17 mm	3.6 ns
7143LA90PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		16	FLATPACK			.5 mm	70 Cel		2KX16	2K		0 Cel		QUAD		S-PQFP-G100		5.5 V			14 mm		32768 bit	4.5 V							14 mm	90 ns
5962-8687515UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		1024 words		5		8	FLATPACK			1.27 mm	125 Cel		1KX8	1K		-55 Cel	TIN LEAD	QUAD		S-XQFP-F48		5.5 V	2.74 mm		19.05 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0					19.05 mm	55 ns
7143LA55PFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	285 mA	2048 words		5		16	FLATPACK			.5 mm	85 Cel		2KX16	2K		-40 Cel		QUAD		S-PQFP-G100		5.5 V			14 mm		32768 bit	4.5 V							14 mm	55 ns
70T633S10BCGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	445 mA	524288 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	512KX18	512K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.7 mm		17 mm	Not Qualified	9437184 bit	2.4 V		e1	30	260		.02 Amp	17 mm	10 ns
70V3569S5BFI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	415 mA	16384 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	16KX36	16K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.2 mm	100 MHz	15 mm	Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE	e0	20	225		.03 Amp	15 mm	5 ns
70V3579S6BCG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	310 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	32KX36	32K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V		83 MHz		Not Qualified	1179648 bit	3.15 V	PIPELINED ARCHITECTURE	e1	30	260				6 ns
7024S35PFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class B	GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	4096 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	125 Cel	3-STATE	4KX16	4K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	65536 bit	4.5 V		e3	30	260		.00003 Amp	14 mm	35 ns
7027L35G	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	108	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	255 mA	32768 words	COMMON	5	5	16	GRID ARRAY	PGA108,12X12	SRAMs	2.54 mm	70 Cel	3-STATE	32KX16	32K	4.5 V	0 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P108	1	5.5 V				Not Qualified	524288 bit	4.5 V		e0		240		.015 Amp		35 ns
5962-8700208UA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	185 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48	1	5.5 V	3.048 mm		14.3002 mm	Qualified	16384 bit	4.5 V		e0		240		.004 Amp	14.3002 mm	55 ns
70V9289L9PFG8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	230 mA	65536 words	COMMON	3.3	3.3	16	FLATPACK	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	64KX16	64K	3 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	3.6 V		66 MHz		Not Qualified	1048576 bit	3 V		e3	30	260		.002 Amp		9 ns
70V3379S6BCG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	310 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	32KX18	32K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V		83 MHz		Not Qualified	589824 bit	3.15 V		e1	30	260		.015 Amp		6 ns
5962-8700205TA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	185 mA	2048 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F48		5.5 V	2.7432 mm		19.05 mm	Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0			YES	.004 Amp	19.05 mm	45 ns
5962-8866511ZX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		2048 words		5		16	GRID ARRAY			2.54 mm	125 Cel		2KX16	2K		-55 Cel		PERPENDICULAR		S-CPGA-P68		5.5 V	5.207 mm		29.464 mm	Qualified	32768 bit	4.5 V	ARBITER		NOT SPECIFIED	NOT SPECIFIED			29.464 mm	55 ns
70V3389S4BFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	460 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX18	64K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.2 mm	133 MHz	15 mm	Not Qualified	1179648 bit	3.15 V	PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE	e1	30	260		.015 Amp	15 mm	4.2 ns
70V3589S166BFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		65536 words		3.3		36	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		64KX36	64K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B208	3	3.45 V	1.7 mm		15 mm	Not Qualified	2359296 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1					15 mm	12 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.