SQUARE SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Nominal Negative Supply Voltage	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
7143SA35JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCN	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			NO LEAD	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		16	CHIP CARRIER				70 Cel		2KX16	2K		0 Cel		QUAD		S-PQCC-N68		5.5 V					32768 bit	4.5 V								35 ns
70V3599S166DRG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	208	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	SYNCHRONOUS	500 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK	QFP208,1.2SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	3.45 V		166 MHz		Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e3				.03 Amp		3.6 ns
7026S20GGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS			PIN/PEG	PARALLEL	ASYNCHRONOUS		16384 words		5		16	GRID ARRAY				85 Cel		16KX16	16K		-40 Cel		PERPENDICULAR		S-CPGA-P84		5.5 V					262144 bit	4.5 V								20 ns
7006L55GGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS			PIN/PEG	PARALLEL	ASYNCHRONOUS	295 mA	16384 words		5		8	GRID ARRAY			2.54 mm	85 Cel		16KX8	16K		-40 Cel	MATTE TIN	PERPENDICULAR		S-CPGA-P68		5.5 V	2.413 mm		27.889 mm	Not Qualified	131072 bit	4.5 V		e3					27.889 mm	55 ns
7024L17FG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		4096 words		5		16	FLATPACK				70 Cel		4KX16	4K		0 Cel		QUAD		S-PQFP-G84		5.5 V					65536 bit	4.5 V								17 ns
7052L25PFGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q		GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK, LOW PROFILE, FINE PITCH			.4 mm	125 Cel		2KX8	2K		-55 Cel		QUAD		S-PQFP-G120		5.5 V	1.6 mm		14 mm		16384 bit	4.5 V							14 mm	25 ns
UPB100422B-10	Renesas Electronics	STANDARD SRAM	OTHER	24	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	ECL		-4.5 V	FLAT	PARALLEL	ASYNCHRONOUS	220 mA	256 words	SEPARATE		-4.5	4	FLATPACK	QFL24,.4SQ	SRAMs	1.27 mm	85 Cel	OPEN-EMITTER	256X4	256		0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-CQFP-F24						Not Qualified	1024 bit			e0						10 ns
7024S55PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS	325 mA	4096 words		5		16	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	85 Cel		4KX16	4K		-40 Cel	MATTE TIN	QUAD		S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	65536 bit	4.5 V		e3	30	260			14 mm	55 ns
70V3569S5DRG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	SYNCHRONOUS	360 mA	16384 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, FINE PITCH	QFP208,1.2SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	16KX36	16K	3.15 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	3.45 V	4.1 mm	100 MHz	28 mm	Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	e3				.015 Amp	28 mm	5 ns
70P259L65BYI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	100	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	ASYNCHRONOUS	70 mA	8192 words	COMMON	1.8	1.8/3	16	GRID ARRAY	BGA100,10X10,20	SRAMs	.5 mm	85 Cel	3-STATE	8KX16	8K		-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B100		1.9 V				Not Qualified	131072 bit	1.7 V	IT ALSO OPERATES AT SUPPLY VOLTAGE 2.5 V AND 3 V NOMINAL	e0				.006 Amp		65 ns
7025S55PFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q		GULL WING	PARALLEL	ASYNCHRONOUS	315 mA	8192 words		5		16	FLATPACK			.5 mm	125 Cel		8KX16	8K		-55 Cel		QUAD		S-PQFP-G100		5.5 V			14 mm		131072 bit	4.5 V							14 mm	55 ns
70T633S10BCI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	ASYNCHRONOUS	445 mA	524288 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	512KX18	512K	2.4 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm		17 mm	Not Qualified	9437184 bit	2.4 V		e0	20	225		.02 Amp	17 mm	10 ns
7143SA55PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS	285 mA	2048 words		5		16	FLATPACK			.5 mm	70 Cel		2KX16	2K		0 Cel		QUAD		S-PQFP-G100		5.5 V			14 mm		32768 bit	4.5 V							14 mm	55 ns
70V7599S166BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY				70 Cel		128KX36	128K		0 Cel		BOTTOM		S-PBGA-B208		3.45 V					4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE							3.6 ns
7024S20FG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS	290 mA	4096 words	COMMON	5	5	16	FLATPACK	QFL84,1.2SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX16	4K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G84		5.5 V				Not Qualified	65536 bit	4.5 V		e3				.000015 Amp		20 ns
70V3569S5BFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS	415 mA	16384 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	16KX36	16K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.2 mm	100 MHz	15 mm	Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE	e0	20	225		.03 Amp	15 mm	5 ns
7006L55FGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535		J BEND	PARALLEL	ASYNCHRONOUS	295 mA	16384 words		5		8	CHIP CARRIER			1.27 mm	125 Cel		16KX8	16K		-55 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V			24.2062 mm	Not Qualified	131072 bit	4.5 V		e3					24.2062 mm	55 ns
7026L20GB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535		PIN/PEG	PARALLEL	ASYNCHRONOUS	315 mA	16384 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	16KX16	16K	4.5 V	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P84		5.5 V				Not Qualified	262144 bit	4.5 V		e0				.01 Amp		20 ns
7024S20PFGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class B		GULL WING	PARALLEL	ASYNCHRONOUS		4096 words		5		16	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	125 Cel		4KX16	4K		-55 Cel	MATTE TIN	QUAD		S-PQFP-G100		5.5 V	1.6 mm		14 mm	Not Qualified	65536 bit	4.5 V		e3					14 mm	20 ns
70T659S15BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	ASYNCHRONOUS	305 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	128KX36	128K	2.4 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.5 mm		15 mm	Not Qualified	4718592 bit	2.4 V		e0	20	225		.01 Amp	15 mm	15 ns
5962-8700216UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883		NO LEAD	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER			1.016 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-CQCC-N52		5.5 V	4.58 mm		14.3002 mm	Qualified	16384 bit	4.5 V		e0					14.3002 mm	55 ns
70V05S15JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	ASYNCHRONOUS		8192 words		3.3		8	CHIP CARRIER			1.27 mm	85 Cel		8KX8	8K		-40 Cel	MATTE TIN	QUAD		S-PQCC-J68		3.6 V	4.572 mm		24.2062 mm	Not Qualified	65536 bit	3 V		e3					24.2062 mm	15 ns
70V3379S6BC	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS	310 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	32KX18	32K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	3.45 V		83 MHz		Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE	e0	20	225		.015 Amp		6 ns
70V3389S5BFG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS	360 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	64KX18	64K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V		100 MHz		Not Qualified	1179648 bit	3.15 V	PIPELINED ARCHITECTURE	e1	30	260		.015 Amp		5 ns
7143LA55PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS	285 mA	2048 words		5		16	FLATPACK			.5 mm	85 Cel		2KX16	2K		-40 Cel		QUAD		S-PQFP-G100		5.5 V			14 mm		32768 bit	4.5 V							14 mm	55 ns
70V7339S133BC	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS	645 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	512KX18	512K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.7 mm	133 MHz	17 mm	Not Qualified	9437184 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.03 Amp	17 mm	15 ns
7143LA45JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCN	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			NO LEAD	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		16	CHIP CARRIER				70 Cel		2KX16	2K		0 Cel		QUAD		S-PQCC-N68		5.5 V					32768 bit	4.5 V								45 ns
7026L15GG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS			PIN/PEG	PARALLEL	ASYNCHRONOUS		16384 words		5		16	GRID ARRAY				70 Cel		16KX16	16K		0 Cel		PERPENDICULAR		S-CPGA-P84		5.5 V					262144 bit	4.5 V								15 ns
7006S55JGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535		J BEND	PARALLEL	ASYNCHRONOUS	315 mA	16384 words		5		8	CHIP CARRIER			1.27 mm	125 Cel		16KX8	16K		-55 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V	4.572 mm		24.2062 mm	Not Qualified	131072 bit	4.5 V		e3					24.2062 mm	55 ns
7024S17F	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			FLAT	PARALLEL	ASYNCHRONOUS	310 mA	4096 words	COMMON	5	5	16	FLATPACK	QFL84,1.2SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX16	4K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQFP-F84		5.5 V			29.21 mm	Not Qualified	65536 bit	4.5 V		e0				.015 Amp	29.21 mm	17 ns
70P249L90BYGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS	60 mA	4096 words	COMMON	2.6	1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA100,10X10,20	SRAMs	.5 mm	85 Cel	3-STATE	4KX16	4K		-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B100	3	3 V	1 mm		6 mm	Not Qualified	65536 bit	1.8 V		e1	30	260		.000006 Amp	6 mm	60 ns
70V3579S5DRG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	FQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	FLATPACK, FINE PITCH			.5 mm	70 Cel		32KX36	32K		0 Cel		QUAD		S-PQFP-G208		3.45 V	4.1 mm		28 mm		1179648 bit	3.15 V	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE						28 mm	5 ns
7026S35GGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS			PIN/PEG	PARALLEL	ASYNCHRONOUS		16384 words		5		16	GRID ARRAY				85 Cel		16KX16	16K		-40 Cel		PERPENDICULAR		S-CPGA-P84		5.5 V					262144 bit	4.5 V								35 ns
70V06L20GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS			PIN/PEG	PARALLEL	ASYNCHRONOUS		16384 words		3.3		8	GRID ARRAY				70 Cel		16KX8	16K		0 Cel		PERPENDICULAR		S-CPGA-P68		3.6 V					131072 bit	3 V								20 ns
5962-9161707MXA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883		PIN/PEG	PARALLEL	ASYNCHRONOUS	400 mA	8192 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	8KX16	8K	4.5 V	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P84	1	5.5 V	5.207 mm		27.94 mm	Qualified	131072 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE	e0		240	YES	.03 Amp	27.94 mm	35 ns
7052S20GG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	108	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS			PIN/PEG	PARALLEL	ASYNCHRONOUS		2048 words		5		8	GRID ARRAY			2.54 mm	70 Cel		2KX8	2K		0 Cel		PERPENDICULAR		S-CPGA-P108		5.5 V	5.207 mm		30.48 mm		16384 bit	4.5 V							30.48 mm	20 ns
7143LA20JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCN	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			NO LEAD	PARALLEL	ASYNCHRONOUS	280 mA	2048 words	COMMON	5	5	16	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX16	2K	2 V	0 Cel	Matte Tin (Sn)	QUAD	2	S-PQCC-N68	3	5.5 V				Not Qualified	32768 bit	4.5 V		e3	NOT SPECIFIED	260		.0015 Amp		20 ns
70T3599S166BCGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS	510 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	128KX36	128K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.7 mm	166 MHz	17 mm	Not Qualified	4718592 bit	2.4 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1	30	260		.02 Amp	17 mm	12 ns
70T3319S133BCG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS	370 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	256KX18	256K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm	133 MHz	17 mm	Not Qualified	4718592 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e1	30	260		.015 Amp	17 mm	15 ns
70T3599S133BCG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	SYNCHRONOUS	370 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.7 mm	133 MHz	17 mm	Not Qualified	4718592 bit	2.4 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1	30	260		.015 Amp	17 mm	15 ns
7143SA20F	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QFF	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS			FLAT	PARALLEL	ASYNCHRONOUS	310 mA	2048 words	COMMON	5	5	16	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX16	2K	2 V	0 Cel	TIN LEAD	QUAD	2	S-CQFP-F68		5.5 V	3.683 mm		24.0792 mm	Not Qualified	32768 bit	4.5 V		e0				.0015 Amp	24.0792 mm	20 ns
70V34S25PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		4096 words		3.3		18	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		4KX18	4K		0 Cel	MATTE TIN	QUAD		S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	73728 bit	3 V		e3					14 mm	25 ns
70T34L20PF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		4096 words		2.5		18	FLATPACK			.5 mm	70 Cel		4KX18	4K		0 Cel	TIN LEAD	QUAD		S-PQFP-G100	3	2.6 V	1.6 mm		14 mm	Not Qualified	73728 bit	2.4 V		e0	20	240			14 mm	20 ns
70T9359L12PF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	SYNCHRONOUS		8192 words		2.5		18	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		8KX18	8K		0 Cel	TIN LEAD	QUAD		S-PQFP-G100	3	2.6 V	1.4 mm		14 mm	Not Qualified	147456 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	240			14 mm	12 ns
70T25L25BFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	ASYNCHRONOUS		8192 words		2.5		16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8KX16	8K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B100	3	2.6 V	1.5 mm		10 mm	Not Qualified	131072 bit	2.4 V		e0		225			10 mm	25 ns
70T24L20BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	ASYNCHRONOUS		4096 words		2.5		16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		4KX16	4K		0 Cel	TIN LEAD	BOTTOM		S-PBGA-B100	3	2.6 V	1.5 mm		10 mm	Not Qualified	65536 bit	2.4 V		e0		225			10 mm	20 ns
70T24L25BFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			BALL	PARALLEL	ASYNCHRONOUS		4096 words		2.5		16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4KX16	4K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B100	3	2.6 V	1.5 mm		10 mm	Not Qualified	65536 bit	2.4 V		e0		225			10 mm	25 ns
70V16L15J	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	ASYNCHRONOUS	185 mA	16384 words	COMMON	3.3	3.3	9	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	16KX9	16K	3 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	3.6 V	4.572 mm		24.2062 mm	Not Qualified	147456 bit	3 V		e0	20	225		.0025 Amp	24.2062 mm	15 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.