SQUARE SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
5962-8700205UA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	185 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48	1	5.5 V	3.048 mm		14.3002 mm	Qualified	16384 bit	4.5 V		e0		240		.004 Amp	14.3002 mm	45 ns
70914S12JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		4096 words		5		9	CHIP CARRIER			.5 mm	70 Cel		4KX9	4K		0 Cel		QUAD		S-PQCC-J68		5.5 V	4.572 mm		24.13 mm		36864 bit	4.5 V							24.13 mm	12 ns
70V9089S6PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		8	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		64KX8	64K		0 Cel	MATTE TIN	QUAD		S-PQFP-G100		3.6 V	1.4 mm		14 mm		524288 bit	3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3					14 mm	6.5 ns
7143LA55JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCN	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS	285 mA	2048 words		5		16	CHIP CARRIER				125 Cel		2KX16	2K		-55 Cel		QUAD		S-PQCC-N68		5.5 V					32768 bit	4.5 V								55 ns
70V3379S5BCGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	415 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	32KX18	32K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.7 mm	100 MHz	17 mm	Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE	e1	30	260		.03 Amp	17 mm	5 ns
5962-8700210UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	52	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER			1.016 mm	125 Cel		2KX8	2K		-55 Cel	TIN LEAD	QUAD		S-CQCC-N52		5.5 V	4.58 mm		14.3002 mm	Not Qualified	16384 bit	4.5 V		e0					14.3002 mm	90 ns
7006S55GI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	SPGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	300 mA	16384 words	COMMON	5	5	8	GRID ARRAY, SHRINK PITCH	PGA68,11X11	SRAMs	1.27 mm	85 Cel	3-STATE	16KX8	16K	4.5 V	-40 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68		5.5 V	5.207 mm		29.464 mm	Not Qualified	131072 bit	4.5 V		e0				.03 Amp	29.464 mm	55 ns
7026S15GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		16384 words		5		16	GRID ARRAY				70 Cel		16KX16	16K		0 Cel		PERPENDICULAR		S-CPGA-P84		5.5 V					262144 bit	4.5 V								15 ns
7006S20GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	370 mA	16384 words	COMMON	5	5	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	4.5 V	-55 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P68		5.5 V	2.413 mm		27.889 mm	Not Qualified	131072 bit	4.5 V		e3				.03 Amp	27.889 mm	20 ns
7143LA90GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		16	GRID ARRAY			2.54 mm	70 Cel		2KX16	2K		0 Cel		PERPENDICULAR		S-CPGA-P68		5.5 V			29.464 mm		32768 bit	4.5 V							29.464 mm	90 ns
70V3569S6BCGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		16384 words		3.3		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		16KX36	16K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256	3	3.45 V	1.5 mm		17 mm	Not Qualified	589824 bit	3.15 V		e1					17 mm	6 ns
7006L45JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	290 mA	16384 words		5		8	CHIP CARRIER			1.27 mm	70 Cel		16KX8	16K		0 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V	4.572 mm		24.2062 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE	e3					24.2062 mm	45 ns
70V06L25JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		3.3		8	CHIP CARRIER			1.27 mm	70 Cel		16KX8	16K		0 Cel	MATTE TIN	QUAD		S-PQCC-J68		3.6 V	4.57 mm		24.2062 mm	Not Qualified	131072 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3					24.2062 mm	25 ns
5962-8700204UA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	230 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48	1	5.5 V	3.048 mm		14.3002 mm	Qualified	16384 bit	4.5 V		e0		240		.03 Amp	14.3002 mm	55 ns
5962-8866509ZX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		2048 words		5		16	GRID ARRAY			2.54 mm	125 Cel		2KX16	2K		-55 Cel		PERPENDICULAR		S-CPGA-P68		5.5 V	5.207 mm		29.464 mm	Qualified	32768 bit	4.5 V	ARBITER		NOT SPECIFIED	NOT SPECIFIED			29.464 mm	70 ns
70V9359L7BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		8192 words		3.3		18	GRID ARRAY, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		8KX18	8K		0 Cel	MATTE TIN	BOTTOM		S-PBGA-B100		3.6 V	1.4 mm		10 mm		147456 bit	3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3					10 mm	7.5 ns
5962-8700220UA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	240 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48		5.5 V	3.048 mm		14.3002 mm	Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0			YES	.004 Amp	14.3002 mm	25 ns
5962-8687509UA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	200 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F48		5.5 V	2.7432 mm		19.05 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0			YES	.03 Amp	19.05 mm	90 ns
70121S35JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	2048 words	COMMON	5	5	9	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX9	2K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V				Not Qualified	18432 bit	4.5 V		e3	30	260		.015 Amp		35 ns
7006S35PFB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	300 mA	16384 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32	SRAMs	.8 mm	125 Cel	3-STATE	16KX8	16K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	131072 bit	4.5 V		e0	30	240		.03 Amp	14 mm	35 ns
70V3579S6BF8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	310 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	32KX36	32K	3.15 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.2 mm	83 MHz	15 mm	Not Qualified	1179648 bit	3.15 V	PIPELINED OUTPUT MODE, SELF-TIMED WRITE CYCLE	e0	20	225			15 mm	6 ns
70V9179L12PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		9	FLATPACK				70 Cel		32KX9	32K		0 Cel		QUAD		S-PQFP-G100		3.6 V					294912 bit	3 V			NOT SPECIFIED	NOT SPECIFIED				12 ns
5962-9166202MXA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	PIN/PEG	PARALLEL	ASYNCHRONOUS	330 mA	4096 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P84	1	5.5 V	5.207 mm		27.94 mm	Qualified	65536 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE	e0		240	YES	.004 Amp	27.94 mm	70 ns
7143SA55GB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	315 mA	2048 words	COMMON	5	5	16	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	2KX16	2K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	PERPENDICULAR	2	S-CPGA-P68	1	5.5 V	3.683 mm		29.464 mm	Not Qualified	32768 bit	4.5 V		e0	NOT SPECIFIED	240		.015 Amp	29.464 mm	55 ns
5962-8976407MYX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		4096 words		5		8	CHIP CARRIER			1.016 mm	125 Cel		4KX8	4K		-55 Cel		QUAD		S-CQCC-N48		5.5 V	3.048 mm		14.3002 mm	Qualified	32768 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			14.3002 mm	35 ns
7025S20FGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS	370 mA	8192 words		5		16	FLATPACK			1.27 mm	125 Cel		8KX16	8K		-55 Cel		QUAD		S-PQFP-F84		5.5 V			29.21 mm		131072 bit	4.5 V							29.21 mm	20 ns
7024S55FG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	250 mA	4096 words	COMMON	5	5	16	FLATPACK	QFL84,1.2SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX16	4K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G84		5.5 V				Not Qualified	65536 bit	4.5 V		e3				.000015 Amp		55 ns
7024L35FGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	PARALLEL	ASYNCHRONOUS	250 mA	4096 words	COMMON	5	5	16	FLATPACK	QFL84,1.2SQ	SRAMs	1.27 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	MATTE TIN	QUAD	2	S-PQFP-G84		5.5 V				Not Qualified	65536 bit	4.5 V		e3				.004 Amp		35 ns
UPD98421F1-GA5-A	Renesas Electronics	CONTENT ADDRESSABLE SRAM	COMMERCIAL	240	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	MOS		BALL	PARALLEL	SYNCHRONOUS	1150 mA	8192 words		3.3	3.3	64	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA240,18X18,32	SRAMs	.8 mm	70 Cel		8KX64	8K		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B240		3.45 V	1.38 mm		16 mm	Not Qualified	524288 bit	3.15 V		e1					16 mm	10 ns
70V3389S6BFI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	208	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	360 mA	65536 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX18	64K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3			83 MHz		Not Qualified	1179648 bit			e0	20	225		.03 Amp		6 ns
70V05S20GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	200 mA	8192 words	COMMON	3.3	3.3	8	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	3 V	0 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P68		3.6 V	5.207 mm		29.464 mm	Not Qualified	65536 bit	3 V		e3				.005 Amp	29.464 mm	20 ns
7024S35GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	250 mA	4096 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	4KX16	4K	4.5 V	0 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P84		5.5 V	5.207 mm		27.94 mm	Not Qualified	65536 bit	4.5 V		e3				.000015 Amp	27.94 mm	35 ns
7007S25JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	J BEND	PARALLEL	ASYNCHRONOUS	345 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	PGA68,11X11	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm		24.2062 mm	Not Qualified	262144 bit	4.5 V		e3	30	260		.03 Amp	24.2062 mm	25 ns
CDM6116BCJ/3	Renesas Electronics	STANDARD SRAM	MILITARY	28	QCCN	SQUARE	CERAMIC	YES		CMOS	MIL-STD-883 Class B (Modified)	NO LEAD	PARALLEL	ASYNCHRONOUS	65 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.45SQ	SRAMs	1.27 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD		S-XQCC-N28						Not Qualified	16384 bit			e0				.0001 Amp		100 ns
70V7319S166BCGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		256KX18	256K		-40 Cel		BOTTOM		S-PBGA-B256		3.45 V	1.5 mm		17 mm		4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE						17 mm	12 ns
7024L35GB	Renesas Electronics	DUAL-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	PIN/PEG	PARALLEL	ASYNCHRONOUS	250 mA	4096 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	PERPENDICULAR	2	S-CPGA-P84	1	5.5 V	5.207 mm		27.94 mm	Not Qualified	65536 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0	NOT SPECIFIED	240		.004 Amp	27.94 mm	35 ns
7052S35PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK, LOW PROFILE, FINE PITCH			.4 mm	70 Cel		2KX8	2K		0 Cel		QUAD		S-PQFP-G120		5.5 V	1.6 mm		14 mm		16384 bit	4.5 V							14 mm	35 ns
70V06L35JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		3.3		8	CHIP CARRIER			1.27 mm	70 Cel		16KX8	16K		0 Cel	MATTE TIN	QUAD		S-PQCC-J68		3.6 V	4.57 mm		24.2062 mm	Not Qualified	131072 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3					24.2062 mm	35 ns
7027S25PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		16	FLATPACK				85 Cel		32KX16	32K		-40 Cel		QUAD		S-PQFP-G100		5.5 V					524288 bit	4.5 V								25 ns
70V06S35JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		3.3		8	CHIP CARRIER			1.27 mm	70 Cel		16KX8	16K		0 Cel	MATTE TIN	QUAD		S-PQCC-J68		3.6 V	4.57 mm		24.2062 mm	Not Qualified	131072 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3					24.2062 mm	35 ns
7007L55JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	J BEND	PARALLEL	ASYNCHRONOUS	270 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	PGA68,11X11	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm		24.2062 mm	Not Qualified	262144 bit	4.5 V		e3	30	260		.01 Amp	24.2062 mm	55 ns
7024S20JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class B	J BEND	PARALLEL	ASYNCHRONOUS	370 mA	4096 words	COMMON	5	5	16	CHIP CARRIER	LDCC84,1.2SQ	SRAMs	2.54 mm	125 Cel	3-STATE	4KX16	4K	4.5 V	-55 Cel	MATTE TIN	QUAD	2	S-PQCC-J84	3	5.5 V	4.572 mm		29.3116 mm	Not Qualified	65536 bit	4.5 V		e3	40	260		.00003 Amp	29.3116 mm	20 ns
70V3389S4BCG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	460 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	64KX18	64K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V		133 MHz		Not Qualified	1179648 bit	3.15 V	PIPELINED ARCHITECTURE	e1	30	260		.015 Amp		4 ns
7024L25GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535 Class B	PIN/PEG	PARALLEL	ASYNCHRONOUS	280 mA	4096 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	MATTE TIN	PERPENDICULAR	2	S-CPGA-P84		5.5 V	5.207 mm		27.94 mm	Not Qualified	65536 bit	4.5 V		e3				.004 Amp	27.94 mm	25 ns
70V08S35PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		8	FLATPACK				70 Cel		64KX8	64K		0 Cel		QUAD		S-PQFP-G100		3.6 V					524288 bit	3 V								35 ns
70V38L20PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		16384 words		3.3		8	FLATPACK				70 Cel		16KX8	16K		0 Cel		QUAD		S-PQFP-G100		3.6 V					131072 bit	3 V								20 ns
7006S35PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	250 mA	16384 words	COMMON	5	5	8	FLATPACK	QFP64,.6SQ,32	SRAMs	.8 mm	70 Cel	3-STATE	16KX8	16K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	131072 bit	4.5 V		e3	30	260		.015 Amp	14 mm	35 ns
70V3399S133BCGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	480 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	128KX18	128K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V		133 MHz		Not Qualified	2359296 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1	30	260		.04 Amp		4.2 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.