Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
DUAL-PORT SRAM |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
COMMON |
5 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
.5 mm |
85 Cel |
NO |
3-STATE |
32KX18 |
32K |
4.5 V |
-40 Cel |
QUAD |
2 |
S-PQFP-G100 |
5.5 V |
1.4 mm |
14 mm |
589824 bit |
4.5 V |
YES |
14 mm |
20 ns |
||||||||||||||||||||
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
230 mA |
65536 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
64KX18 |
64K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
66 MHz |
Not Qualified |
1179648 bit |
3 V |
e3 |
30 |
260 |
.002 Amp |
9 ns |
||||||||||||||
Renesas Electronics |
DUAL-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
230 mA |
65536 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
64KX18 |
64K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
66 MHz |
14 mm |
Not Qualified |
1179648 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.002 Amp |
14 mm |
20 ns |
||||||||||
Renesas Electronics |
DUAL-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
200 mA |
65536 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
64KX18 |
64K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
50 MHz |
14 mm |
Not Qualified |
1179648 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.002 Amp |
14 mm |
25 ns |
||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
340 mA |
32768 words |
COMMON |
5 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
.5 mm |
70 Cel |
NO |
3-STATE |
32KX18 |
32K |
4.5 V |
0 Cel |
QUAD |
2 |
S-PQFP-G100 |
5.5 V |
1.4 mm |
14 mm |
589824 bit |
4.5 V |
YES |
.003 Amp |
14 mm |
15 ns |
||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
208 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
36 |
GRID ARRAY |
70 Cel |
256KX36 |
256K |
0 Cel |
BOTTOM |
S-PBGA-B208 |
3.45 V |
9437184 bit |
3.15 V |
PIPELINED OR FLOW THROUGH ARCHITECTURE |
4.2 ns |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
295 mA |
32768 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
PGA68,11X11 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQCC-J68 |
1 |
5.5 V |
4.572 mm |
24.2062 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
30 |
260 |
.01 Amp |
24.2062 mm |
35 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16384 words |
3.3 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
70 Cel |
16KX8 |
16K |
0 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
3 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN |
e3 |
14 mm |
35 ns |
|||||||||||||||||||||
Renesas Electronics |
DUAL-PORT SRAM |
INDUSTRIAL |
84 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
16 |
CHIP CARRIER |
85 Cel |
16KX16 |
16K |
-40 Cel |
QUAD |
S-PQCC-J84 |
5.5 V |
262144 bit |
4.5 V |
20 ns |
|||||||||||||||||||||||||||||||
Renesas Electronics |
DUAL-PORT SRAM |
COMMERCIAL |
208 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
500 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX18 |
256K |
3.15 V |
0 Cel |
TIN LEAD |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
3.45 V |
1.7 mm |
166 MHz |
15 mm |
Not Qualified |
4718592 bit |
3.15 V |
PIPELINED OR FLOW-THROUGH ARCHITECTURE |
e0 |
20 |
225 |
.03 Amp |
15 mm |
12 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
208 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
450 mA |
131072 words |
COMMON |
2.5 |
2.5,2.5/3.3 |
36 |
GRID ARRAY |
BGA208,17X17,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
128KX36 |
128K |
2.4 V |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
2.6 V |
133 MHz |
Not Qualified |
4718592 bit |
2.4 V |
PIPELINED OR FLOW-THROUGH ARCHITECTURE |
e1 |
30 |
260 |
.015 Amp |
15 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
48 |
QFF |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
230 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFL48,.75SQ |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
2 V |
-55 Cel |
TIN LEAD |
QUAD |
2 |
S-CQFP-F48 |
1 |
5.5 V |
2.7432 mm |
19.05 mm |
Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
e0 |
240 |
YES |
.004 Amp |
19.05 mm |
35 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
208 |
BGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
460 mA |
32768 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
GRID ARRAY |
BGA208,17X17,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
32KX18 |
32K |
3.15 V |
0 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-CBGA-B208 |
3 |
3.45 V |
1.7 mm |
133 MHz |
15 mm |
Not Qualified |
589824 bit |
3.15 V |
PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE |
e1 |
30 |
260 |
.015 Amp |
15 mm |
4.2 ns |
|||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
310 mA |
2048 words |
5 |
16 |
FLATPACK |
.5 mm |
70 Cel |
2KX16 |
2K |
0 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
14 mm |
32768 bit |
4.5 V |
14 mm |
20 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
256 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
36 |
GRID ARRAY |
70 Cel |
256KX36 |
256K |
0 Cel |
BOTTOM |
S-PBGA-B256 |
3.45 V |
9437184 bit |
3.15 V |
PIPELINED OR FLOW THROUGH ARCHITECTURE |
4.2 ns |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
8192 words |
3.3 |
8 |
CHIP CARRIER |
1.27 mm |
85 Cel |
8KX8 |
8K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQCC-J68 |
3.6 V |
4.57 mm |
24.2062 mm |
Not Qualified |
65536 bit |
3 V |
e3 |
24.2062 mm |
35 ns |
|||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
360 mA |
131072 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
30 |
260 |
.006 Amp |
14 mm |
20 ns |
|||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
68 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
285 mA |
2048 words |
5 |
16 |
GRID ARRAY |
70 Cel |
2KX16 |
2K |
0 Cel |
PERPENDICULAR |
S-CPGA-P68 |
5.5 V |
32768 bit |
4.5 V |
55 ns |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
INDUSTRIAL |
208 |
FBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
360 mA |
65536 words |
COMMON |
2.5/3.3,3.3 |
18 |
GRID ARRAY, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
64KX18 |
64K |
3.15 V |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
83 MHz |
Not Qualified |
1179648 bit |
e1 |
30 |
260 |
.03 Amp |
6 ns |
|||||||||||||||||
Renesas Electronics |
DUAL-PORT SRAM |
MILITARY |
84 |
QFF |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
FLAT |
PARALLEL |
ASYNCHRONOUS |
300 mA |
4096 words |
COMMON |
5 |
5 |
16 |
FLATPACK |
QFL84,1.2SQ |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
4KX16 |
4K |
4.5 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
2 |
S-PQFP-F84 |
1 |
5.5 V |
3.556 mm |
29.21 mm |
Not Qualified |
65536 bit |
4.5 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN |
e0 |
NOT SPECIFIED |
240 |
.03 Amp |
29.21 mm |
35 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
250 mA |
16384 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
70 Cel |
16KX8 |
16K |
0 Cel |
MATTE TIN |
QUAD |
S-PQCC-J68 |
5.5 V |
24.2062 mm |
131072 bit |
4.5 V |
e3 |
24.2062 mm |
35 ns |
|||||||||||||||||||||||||
Renesas Electronics |
DUAL-PORT SRAM |
MILITARY |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
38535Q/M;38534H;883B |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
280 mA |
4096 words |
COMMON |
5 |
5 |
16 |
GRID ARRAY |
PGA84M,11X11 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
4KX16 |
4K |
2 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
PERPENDICULAR |
2 |
S-CPGA-P84 |
1 |
5.5 V |
5.207 mm |
27.94 mm |
Not Qualified |
65536 bit |
4.5 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN |
e0 |
NOT SPECIFIED |
240 |
.004 Amp |
27.94 mm |
25 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
120 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 Class Q |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
360 mA |
2048 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP120,.63SQ,16 |
SRAMs |
.4 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
4.5 V |
-55 Cel |
MATTE TIN |
QUAD |
4 |
S-PQFP-G120 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
16384 bit |
4.5 V |
e3 |
.03 Amp |
14 mm |
25 ns |
||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
310 mA |
4096 words |
COMMON |
5 |
5 |
16 |
GRID ARRAY |
PGA84M,11X11 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
4KX16 |
4K |
4.5 V |
0 Cel |
MATTE TIN |
PERPENDICULAR |
2 |
S-CPGA-P84 |
5.5 V |
5.207 mm |
27.94 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
.000015 Amp |
27.94 mm |
17 ns |
||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
80 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
230 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP80,.64SQ |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G80 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
30 |
260 |
.005 Amp |
14 mm |
55 ns |
|||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFF |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
FLAT |
PARALLEL |
SYNCHRONOUS |
16384 words |
3.3 |
18 |
FLATPACK |
.5 mm |
70 Cel |
16KX18 |
16K |
0 Cel |
QUAD |
S-PQFP-F100 |
3.6 V |
1.6 mm |
14 mm |
294912 bit |
3 V |
14 mm |
||||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
80 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
335 mA |
32768 words |
COMMON |
5 |
5 |
8 |
FLATPACK |
QFP80,.64SQ |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G80 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
30 |
260 |
.03 Amp |
14 mm |
35 ns |
|||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
68 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-STD-883 |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
8 |
GRID ARRAY |
2.54 mm |
125 Cel |
16KX8 |
16K |
-55 Cel |
PERPENDICULAR |
S-CPGA-P68 |
5.5 V |
5.207 mm |
29.464 mm |
Qualified |
131072 bit |
4.5 V |
INTERRUPT FLAG; ARBITER; SEMAPHORE |
NOT SPECIFIED |
NOT SPECIFIED |
29.464 mm |
55 ns |
||||||||||||||||||||||
Renesas Electronics |
DUAL-PORT SRAM |
INDUSTRIAL |
256 |
LBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
790 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
GRID ARRAY, LOW PROFILE |
BGA256,16X16,40 |
SRAMs |
1 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
3.15 V |
-40 Cel |
TIN LEAD |
BOTTOM |
2 |
S-PBGA-B256 |
3 |
3.45 V |
1.5 mm |
166 MHz |
17 mm |
Not Qualified |
9437184 bit |
3.15 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
20 |
225 |
.03 Amp |
17 mm |
12 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
256 |
LBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
395 mA |
262144 words |
COMMON |
2.5 |
2.5,2.5/3.3 |
18 |
GRID ARRAY, LOW PROFILE |
BGA256,16X16,40 |
SRAMs |
1 mm |
85 Cel |
3-STATE |
256KX18 |
256K |
2.4 V |
-40 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
2 |
S-PBGA-B256 |
3 |
2.6 V |
1.5 mm |
17 mm |
Not Qualified |
4718592 bit |
2.4 V |
e0 |
20 |
225 |
.02 Amp |
17 mm |
12 ns |
||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
208 |
FQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
355 mA |
131072 words |
COMMON |
2.5 |
2.5,2.5/3.3 |
36 |
FLATPACK, FINE PITCH |
QFP208,1.2SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
128KX36 |
128K |
2.4 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G208 |
3 |
2.6 V |
4.1 mm |
28 mm |
Not Qualified |
4718592 bit |
2.4 V |
e3 |
.01 Amp |
28 mm |
12 ns |
|||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
208 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
500 mA |
131072 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
128KX36 |
128K |
3.15 V |
0 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
3.45 V |
1.7 mm |
166 MHz |
15 mm |
Not Qualified |
4718592 bit |
3.15 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
20 |
225 |
.03 Amp |
15 mm |
12 ns |
||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
16 |
FLATPACK |
125 Cel |
4KX16 |
4K |
-55 Cel |
QUAD |
S-PQFP-G84 |
5.5 V |
65536 bit |
4.5 V |
20 ns |
||||||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
108 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
250 mA |
2048 words |
COMMON |
5 |
5 |
8 |
GRID ARRAY |
PGA108,12X12 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
2 V |
0 Cel |
TIN LEAD |
PERPENDICULAR |
4 |
S-CPGA-P108 |
1 |
5.5 V |
5.207 mm |
30.48 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
e0 |
240 |
.0006 Amp |
30.48 mm |
20 ns |
||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-STD-883 |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
16 |
GRID ARRAY |
2.54 mm |
125 Cel |
4KX16 |
4K |
-55 Cel |
PERPENDICULAR |
S-CPGA-P84 |
5.5 V |
5.207 mm |
27.94 mm |
Qualified |
65536 bit |
4.5 V |
INTERRUPT FLAG; ARBITER; SEMAPHORE |
NOT SPECIFIED |
NOT SPECIFIED |
27.94 mm |
70 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
256 |
LBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
600 mA |
524288 words |
COMMON |
2.5 |
2.5,2.5/3.3 |
36 |
GRID ARRAY, LOW PROFILE |
BGA256,16X16,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
512KX36 |
512K |
2.4 V |
0 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
2 |
S-PBGA-B256 |
3 |
2.6 V |
1.5 mm |
17 mm |
Not Qualified |
18874368 bit |
2.4 V |
e0 |
20 |
225 |
.02 Amp |
17 mm |
15 ns |
||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
215 mA |
4096 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
4KX18 |
4K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
73728 bit |
3 V |
e3 |
30 |
260 |
.005 Amp |
14 mm |
15 ns |
|||||||||||
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
INDUSTRIAL |
256 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
510 mA |
262144 words |
COMMON |
2.5,2.5/3.3 |
18 |
GRID ARRAY |
BGA256,16X16,40 |
SRAMs |
1 mm |
85 Cel |
3-STATE |
256KX18 |
256K |
2.4 V |
-40 Cel |
TIN LEAD |
BOTTOM |
2 |
S-PBGA-B256 |
3 |
166 MHz |
Not Qualified |
4718592 bit |
e0 |
.02 Amp |
12 ns |
||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
108 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
300 mA |
2048 words |
COMMON |
5 |
5 |
8 |
GRID ARRAY |
PGA108,12X12 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
4.5 V |
0 Cel |
MATTE TIN |
PERPENDICULAR |
4 |
S-CPGA-P108 |
5.5 V |
5.207 mm |
30.48 mm |
Not Qualified |
16384 bit |
4.5 V |
e3 |
.015 Amp |
30.48 mm |
20 ns |
||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
300 mA |
2048 words |
5 |
16 |
FLATPACK |
.5 mm |
85 Cel |
2KX16 |
2K |
-40 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
14 mm |
32768 bit |
4.5 V |
14 mm |
25 ns |
|||||||||||||||||||||||||||
Renesas Electronics |
DUAL-PORT SRAM |
COMMERCIAL |
256 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
500 mA |
131072 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
GRID ARRAY |
BGA256,16X16,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
128KX18 |
128K |
3.15 V |
0 Cel |
TIN LEAD |
BOTTOM |
2 |
S-PBGA-B256 |
3 |
3.45 V |
166 MHz |
Not Qualified |
2359296 bit |
3.15 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
20 |
225 |
.03 Amp |
3.6 ns |
|||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
84 |
PGA |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-STD-883 |
PIN/PEG |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
16 |
GRID ARRAY |
2.54 mm |
125 Cel |
8KX16 |
8K |
-55 Cel |
PERPENDICULAR |
S-CPGA-P84 |
5.5 V |
5.207 mm |
27.94 mm |
Qualified |
131072 bit |
4.5 V |
INTERRUPT FLAG; ARBITER; SEMAPHORE |
NOT SPECIFIED |
NOT SPECIFIED |
27.94 mm |
35 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
330 mA |
8192 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
8KX18 |
8K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.4 mm |
14 mm |
Not Qualified |
147456 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.003 Amp |
14 mm |
6.5 ns |
|||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
MILITARY |
68 |
QCCN |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-PRF-38535 |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
315 mA |
2048 words |
5 |
16 |
CHIP CARRIER |
125 Cel |
2KX16 |
2K |
-55 Cel |
QUAD |
S-PQCC-N68 |
5.5 V |
32768 bit |
4.5 V |
55 ns |
|||||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
120 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
.4 mm |
85 Cel |
2KX8 |
2K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G120 |
3 |
5.5 V |
1.6 mm |
14 mm |
16384 bit |
4.5 V |
e3 |
260 |
14 mm |
25 ns |
||||||||||||||||||||||
|
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
COMMERCIAL |
208 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
460 mA |
32768 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
GRID ARRAY |
BGA208,17X17,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
32KX18 |
32K |
3.15 V |
0 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
3.45 V |
133 MHz |
Not Qualified |
589824 bit |
3.15 V |
e1 |
30 |
260 |
.015 Amp |
4.2 ns |
|||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
85 Cel |
16KX8 |
16K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQCC-J68 |
3 |
5.5 V |
4.572 mm |
24.2062 mm |
Not Qualified |
131072 bit |
4.5 V |
e3 |
260 |
24.2062 mm |
20 ns |
|||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
65536 words |
3.3 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
70 Cel |
64KX8 |
64K |
0 Cel |
MATTE TIN |
QUAD |
S-PQFP-G100 |
3.6 V |
1.4 mm |
14 mm |
524288 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
14 mm |
6.5 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.