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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

7037L20PFGI8

Renesas Electronics

DUAL-PORT SRAM

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

COMMON

5

18

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

.5 mm

85 Cel

NO

3-STATE

32KX18

32K

4.5 V

-40 Cel

QUAD

2

S-PQFP-G100

5.5 V

1.4 mm

14 mm

589824 bit

4.5 V

YES

14 mm

20 ns

70V9389L9PFG8

Renesas Electronics

APPLICATION SPECIFIC SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

230 mA

65536 words

COMMON

3.3

3.3

18

FLATPACK

QFP100,.63SQ,20

SRAMs

.5 mm

70 Cel

3-STATE

64KX18

64K

3 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G100

3

3.6 V

66 MHz

Not Qualified

1179648 bit

3 V

e3

30

260

.002 Amp

9 ns

70V9389L9PFG

Renesas Electronics

DUAL-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

230 mA

65536 words

COMMON

3.3

3.3

18

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

70 Cel

3-STATE

64KX18

64K

3 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G100

3

3.6 V

1.6 mm

66 MHz

14 mm

Not Qualified

1179648 bit

3 V

FLOW-THROUGH OR PIPELINED ARCHITECTURE

e3

30

260

.002 Amp

14 mm

20 ns

70V9389L12PFG

Renesas Electronics

DUAL-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

200 mA

65536 words

COMMON

3.3

3.3

18

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

70 Cel

3-STATE

64KX18

64K

3 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G100

3

3.6 V

1.6 mm

50 MHz

14 mm

Not Qualified

1179648 bit

3 V

FLOW-THROUGH OR PIPELINED ARCHITECTURE

e3

30

260

.002 Amp

14 mm

25 ns

7037L15PFG

Renesas Electronics

DUAL-PORT SRAM

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

340 mA

32768 words

COMMON

5

18

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

.5 mm

70 Cel

NO

3-STATE

32KX18

32K

4.5 V

0 Cel

QUAD

2

S-PQFP-G100

5.5 V

1.4 mm

14 mm

589824 bit

4.5 V

YES

.003 Amp

14 mm

15 ns

70V7519S133BFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

208

BGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

262144 words

3.3

36

GRID ARRAY

70 Cel

256KX36

256K

0 Cel

BOTTOM

S-PBGA-B208

3.45 V

9437184 bit

3.15 V

PIPELINED OR FLOW THROUGH ARCHITECTURE

4.2 ns

7007L35JGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

68

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

295 mA

32768 words

COMMON

5

5

8

CHIP CARRIER

PGA68,11X11

SRAMs

1.27 mm

85 Cel

3-STATE

32KX8

32K

4.5 V

-40 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQCC-J68

1

5.5 V

4.572 mm

24.2062 mm

Not Qualified

262144 bit

4.5 V

e3

30

260

.01 Amp

24.2062 mm

35 ns

70V06L35PFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

64

LQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16384 words

3.3

8

FLATPACK, LOW PROFILE

.8 mm

70 Cel

16KX8

16K

0 Cel

MATTE TIN

QUAD

S-PQFP-G64

3

3.6 V

1.6 mm

14 mm

Not Qualified

131072 bit

3 V

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

e3

14 mm

35 ns

7026L20JGI8

Renesas Electronics

DUAL-PORT SRAM

INDUSTRIAL

84

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

16384 words

5

16

CHIP CARRIER

85 Cel

16KX16

16K

-40 Cel

QUAD

S-PQCC-J84

5.5 V

262144 bit

4.5 V

20 ns

70V3319S166BF8

Renesas Electronics

DUAL-PORT SRAM

COMMERCIAL

208

LFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

500 mA

262144 words

COMMON

3.3

2.5/3.3,3.3

18

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA208,17X17,32

SRAMs

.8 mm

70 Cel

3-STATE

256KX18

256K

3.15 V

0 Cel

TIN LEAD

BOTTOM

2

S-PBGA-B208

3

3.45 V

1.7 mm

166 MHz

15 mm

Not Qualified

4718592 bit

3.15 V

PIPELINED OR FLOW-THROUGH ARCHITECTURE

e0

20

225

.03 Amp

15 mm

12 ns

70T3599S133BFGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

208

BGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

450 mA

131072 words

COMMON

2.5

2.5,2.5/3.3

36

GRID ARRAY

BGA208,17X17,32

SRAMs

.8 mm

85 Cel

3-STATE

128KX36

128K

2.4 V

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

2

S-PBGA-B208

3

2.6 V

133 MHz

Not Qualified

4718592 bit

2.4 V

PIPELINED OR FLOW-THROUGH ARCHITECTURE

e1

30

260

.015 Amp

15 ns

5962-8700218TA

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

QFF

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

38535Q/M;38534H;883B

FLAT

PARALLEL

ASYNCHRONOUS

230 mA

2048 words

COMMON

5

5

8

FLATPACK

QFL48,.75SQ

SRAMs

1.27 mm

125 Cel

3-STATE

2KX8

2K

2 V

-55 Cel

TIN LEAD

QUAD

2

S-CQFP-F48

1

5.5 V

2.7432 mm

19.05 mm

Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

e0

240

YES

.004 Amp

19.05 mm

35 ns

70V3379S4BFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

208

BGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

460 mA

32768 words

COMMON

3.3

2.5/3.3,3.3

18

GRID ARRAY

BGA208,17X17,32

SRAMs

.8 mm

70 Cel

3-STATE

32KX18

32K

3.15 V

0 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

2

S-CBGA-B208

3

3.45 V

1.7 mm

133 MHz

15 mm

Not Qualified

589824 bit

3.15 V

PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE

e1

30

260

.015 Amp

15 mm

4.2 ns

7143SA20PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

310 mA

2048 words

5

16

FLATPACK

.5 mm

70 Cel

2KX16

2K

0 Cel

QUAD

S-PQFP-G100

5.5 V

14 mm

32768 bit

4.5 V

14 mm

20 ns

70V7519S133BCG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

256

BGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

262144 words

3.3

36

GRID ARRAY

70 Cel

256KX36

256K

0 Cel

BOTTOM

S-PBGA-B256

3.45 V

9437184 bit

3.15 V

PIPELINED OR FLOW THROUGH ARCHITECTURE

4.2 ns

70V05L35JGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

68

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

8192 words

3.3

8

CHIP CARRIER

1.27 mm

85 Cel

8KX8

8K

-40 Cel

MATTE TIN

QUAD

S-PQCC-J68

3.6 V

4.57 mm

24.2062 mm

Not Qualified

65536 bit

3 V

e3

24.2062 mm

35 ns

7009L20PFGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

360 mA

131072 words

COMMON

5

5

8

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

85 Cel

3-STATE

128KX8

128K

4.5 V

-40 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G100

3

5.5 V

1.6 mm

14 mm

Not Qualified

1048576 bit

4.5 V

e3

30

260

.006 Amp

14 mm

20 ns

7143SA55GG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

68

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

285 mA

2048 words

5

16

GRID ARRAY

70 Cel

2KX16

2K

0 Cel

PERPENDICULAR

S-CPGA-P68

5.5 V

32768 bit

4.5 V

55 ns

70V3389S6BFGI8

Renesas Electronics

APPLICATION SPECIFIC SRAM

INDUSTRIAL

208

FBGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

360 mA

65536 words

COMMON

2.5/3.3,3.3

18

GRID ARRAY, FINE PITCH

BGA208,17X17,32

SRAMs

.8 mm

85 Cel

3-STATE

64KX18

64K

3.15 V

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

2

S-PBGA-B208

3

83 MHz

Not Qualified

1179648 bit

e1

30

260

.03 Amp

6 ns

7024S35FB

Renesas Electronics

DUAL-PORT SRAM

MILITARY

84

QFF

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

38535Q/M;38534H;883B

FLAT

PARALLEL

ASYNCHRONOUS

300 mA

4096 words

COMMON

5

5

16

FLATPACK

QFL84,1.2SQ

SRAMs

1.27 mm

125 Cel

3-STATE

4KX16

4K

4.5 V

-55 Cel

Tin/Lead (Sn/Pb)

QUAD

2

S-PQFP-F84

1

5.5 V

3.556 mm

29.21 mm

Not Qualified

65536 bit

4.5 V

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

e0

NOT SPECIFIED

240

.03 Amp

29.21 mm

35 ns

7006S35FG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

68

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

250 mA

16384 words

5

8

CHIP CARRIER

1.27 mm

70 Cel

16KX8

16K

0 Cel

MATTE TIN

QUAD

S-PQCC-J68

5.5 V

24.2062 mm

131072 bit

4.5 V

e3

24.2062 mm

35 ns

7024L25GB

Renesas Electronics

DUAL-PORT SRAM

MILITARY

84

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

38535Q/M;38534H;883B

PIN/PEG

PARALLEL

ASYNCHRONOUS

280 mA

4096 words

COMMON

5

5

16

GRID ARRAY

PGA84M,11X11

SRAMs

2.54 mm

125 Cel

3-STATE

4KX16

4K

2 V

-55 Cel

Tin/Lead (Sn/Pb)

PERPENDICULAR

2

S-CPGA-P84

1

5.5 V

5.207 mm

27.94 mm

Not Qualified

65536 bit

4.5 V

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

e0

NOT SPECIFIED

240

.004 Amp

27.94 mm

25 ns

7052S25PFGB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

120

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

MIL-PRF-38535 Class Q

GULL WING

PARALLEL

ASYNCHRONOUS

360 mA

2048 words

COMMON

5

5

8

FLATPACK, LOW PROFILE, FINE PITCH

QFP120,.63SQ,16

SRAMs

.4 mm

125 Cel

3-STATE

2KX8

2K

4.5 V

-55 Cel

MATTE TIN

QUAD

4

S-PQFP-G120

3

5.5 V

1.6 mm

14 mm

Not Qualified

16384 bit

4.5 V

e3

.03 Amp

14 mm

25 ns

7024S17GG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

84

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

310 mA

4096 words

COMMON

5

5

16

GRID ARRAY

PGA84M,11X11

SRAMs

2.54 mm

70 Cel

3-STATE

4KX16

4K

4.5 V

0 Cel

MATTE TIN

PERPENDICULAR

2

S-CPGA-P84

5.5 V

5.207 mm

27.94 mm

Not Qualified

65536 bit

4.5 V

e3

.000015 Amp

27.94 mm

17 ns

7007L55PFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

80

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

230 mA

32768 words

COMMON

5

5

8

FLATPACK

QFP80,.64SQ

SRAMs

.65 mm

70 Cel

3-STATE

32KX8

32K

4.5 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G80

3

5.5 V

1.6 mm

14 mm

Not Qualified

262144 bit

4.5 V

e3

30

260

.005 Amp

14 mm

55 ns

70V9369L7PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

QFF

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

FLAT

PARALLEL

SYNCHRONOUS

16384 words

3.3

18

FLATPACK

.5 mm

70 Cel

16KX18

16K

0 Cel

QUAD

S-PQFP-F100

3.6 V

1.6 mm

14 mm

294912 bit

3 V

14 mm

7007S35PFGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

80

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

335 mA

32768 words

COMMON

5

5

8

FLATPACK

QFP80,.64SQ

SRAMs

.65 mm

85 Cel

3-STATE

32KX8

32K

4.5 V

-40 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G80

3

5.5 V

1.6 mm

14 mm

Not Qualified

262144 bit

4.5 V

e3

30

260

.03 Amp

14 mm

35 ns

5962-9150804MXX

Renesas Electronics

MULTI-PORT SRAM

MILITARY

68

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

MIL-STD-883

PIN/PEG

PARALLEL

ASYNCHRONOUS

16384 words

5

8

GRID ARRAY

2.54 mm

125 Cel

16KX8

16K

-55 Cel

PERPENDICULAR

S-CPGA-P68

5.5 V

5.207 mm

29.464 mm

Qualified

131072 bit

4.5 V

INTERRUPT FLAG; ARBITER; SEMAPHORE

NOT SPECIFIED

NOT SPECIFIED

29.464 mm

55 ns

70V7519S166BC

Renesas Electronics

DUAL-PORT SRAM

INDUSTRIAL

256

LBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

790 mA

262144 words

COMMON

3.3

2.5/3.3,3.3

36

GRID ARRAY, LOW PROFILE

BGA256,16X16,40

SRAMs

1 mm

85 Cel

3-STATE

256KX36

256K

3.15 V

-40 Cel

TIN LEAD

BOTTOM

2

S-PBGA-B256

3

3.45 V

1.5 mm

166 MHz

17 mm

Not Qualified

9437184 bit

3.15 V

FLOW-THROUGH OR PIPELINED ARCHITECTURE

e0

20

225

.03 Amp

17 mm

12 ns

70T631S12BCI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

256

LBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

395 mA

262144 words

COMMON

2.5

2.5,2.5/3.3

18

GRID ARRAY, LOW PROFILE

BGA256,16X16,40

SRAMs

1 mm

85 Cel

3-STATE

256KX18

256K

2.4 V

-40 Cel

Tin/Lead (Sn63Pb37)

BOTTOM

2

S-PBGA-B256

3

2.6 V

1.5 mm

17 mm

Not Qualified

4718592 bit

2.4 V

e0

20

225

.02 Amp

17 mm

12 ns

70T659S12DRG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

208

FQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

355 mA

131072 words

COMMON

2.5

2.5,2.5/3.3

36

FLATPACK, FINE PITCH

QFP208,1.2SQ,20

SRAMs

.5 mm

70 Cel

3-STATE

128KX36

128K

2.4 V

0 Cel

MATTE TIN

QUAD

2

S-PQFP-G208

3

2.6 V

4.1 mm

28 mm

Not Qualified

4718592 bit

2.4 V

e3

.01 Amp

28 mm

12 ns

70V3599S166BF8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

208

LFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

500 mA

131072 words

COMMON

3.3

2.5/3.3,3.3

36

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA208,17X17,32

SRAMs

.8 mm

70 Cel

3-STATE

128KX36

128K

3.15 V

0 Cel

Tin/Lead (Sn63Pb37)

BOTTOM

2

S-PBGA-B208

3

3.45 V

1.7 mm

166 MHz

15 mm

Not Qualified

4718592 bit

3.15 V

FLOW-THROUGH OR PIPELINED ARCHITECTURE

e0

20

225

.03 Amp

15 mm

12 ns

7024L20FGB8

Renesas Electronics

MULTI-PORT SRAM

MILITARY

84

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

MIL-PRF-38535

GULL WING

PARALLEL

ASYNCHRONOUS

4096 words

5

16

FLATPACK

125 Cel

4KX16

4K

-55 Cel

QUAD

S-PQFP-G84

5.5 V

65536 bit

4.5 V

20 ns

7052L20G

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

108

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

250 mA

2048 words

COMMON

5

5

8

GRID ARRAY

PGA108,12X12

SRAMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

2 V

0 Cel

TIN LEAD

PERPENDICULAR

4

S-CPGA-P108

1

5.5 V

5.207 mm

30.48 mm

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

e0

240

.0006 Amp

30.48 mm

20 ns

5962-9166202MXX

Renesas Electronics

MULTI-PORT SRAM

MILITARY

84

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

MIL-STD-883

PIN/PEG

PARALLEL

ASYNCHRONOUS

4096 words

5

16

GRID ARRAY

2.54 mm

125 Cel

4KX16

4K

-55 Cel

PERPENDICULAR

S-CPGA-P84

5.5 V

5.207 mm

27.94 mm

Qualified

65536 bit

4.5 V

INTERRUPT FLAG; ARBITER; SEMAPHORE

NOT SPECIFIED

NOT SPECIFIED

27.94 mm

70 ns

70T653MS15BC8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

256

LBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

600 mA

524288 words

COMMON

2.5

2.5,2.5/3.3

36

GRID ARRAY, LOW PROFILE

BGA256,16X16,40

SRAMs

1 mm

70 Cel

3-STATE

512KX36

512K

2.4 V

0 Cel

Tin/Lead (Sn63Pb37)

BOTTOM

2

S-PBGA-B256

3

2.6 V

1.5 mm

17 mm

Not Qualified

18874368 bit

2.4 V

e0

20

225

.02 Amp

17 mm

15 ns

70V34S15PFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

215 mA

4096 words

COMMON

3.3

3.3

18

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

70 Cel

3-STATE

4KX18

4K

3 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G100

3

3.6 V

1.6 mm

14 mm

Not Qualified

73728 bit

3 V

e3

30

260

.005 Amp

14 mm

15 ns

70T3319S166BCI8

Renesas Electronics

APPLICATION SPECIFIC SRAM

INDUSTRIAL

256

BGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

510 mA

262144 words

COMMON

2.5,2.5/3.3

18

GRID ARRAY

BGA256,16X16,40

SRAMs

1 mm

85 Cel

3-STATE

256KX18

256K

2.4 V

-40 Cel

TIN LEAD

BOTTOM

2

S-PBGA-B256

3

166 MHz

Not Qualified

4718592 bit

e0

.02 Amp

12 ns

7052S20GG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

108

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

300 mA

2048 words

COMMON

5

5

8

GRID ARRAY

PGA108,12X12

SRAMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

4.5 V

0 Cel

MATTE TIN

PERPENDICULAR

4

S-CPGA-P108

5.5 V

5.207 mm

30.48 mm

Not Qualified

16384 bit

4.5 V

e3

.015 Amp

30.48 mm

20 ns

7143LA25PFGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

300 mA

2048 words

5

16

FLATPACK

.5 mm

85 Cel

2KX16

2K

-40 Cel

QUAD

S-PQFP-G100

5.5 V

14 mm

32768 bit

4.5 V

14 mm

25 ns

70V3399S166BC

Renesas Electronics

DUAL-PORT SRAM

COMMERCIAL

256

BGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

500 mA

131072 words

COMMON

3.3

2.5/3.3,3.3

18

GRID ARRAY

BGA256,16X16,40

SRAMs

1 mm

70 Cel

3-STATE

128KX18

128K

3.15 V

0 Cel

TIN LEAD

BOTTOM

2

S-PBGA-B256

3

3.45 V

166 MHz

Not Qualified

2359296 bit

3.15 V

FLOW-THROUGH OR PIPELINED ARCHITECTURE

e0

20

225

.03 Amp

3.6 ns

5962-9161707MXX

Renesas Electronics

MULTI-PORT SRAM

MILITARY

84

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

MIL-STD-883

PIN/PEG

PARALLEL

ASYNCHRONOUS

8192 words

5

16

GRID ARRAY

2.54 mm

125 Cel

8KX16

8K

-55 Cel

PERPENDICULAR

S-CPGA-P84

5.5 V

5.207 mm

27.94 mm

Qualified

131072 bit

4.5 V

INTERRUPT FLAG; ARBITER; SEMAPHORE

NOT SPECIFIED

NOT SPECIFIED

27.94 mm

35 ns

70V9359L6PFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

330 mA

8192 words

COMMON

3.3

3.3

18

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

70 Cel

3-STATE

8KX18

8K

3 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G100

3

3.6 V

1.4 mm

14 mm

Not Qualified

147456 bit

3 V

FLOW-THROUGH OR PIPELINED ARCHITECTURE

e3

30

260

.003 Amp

14 mm

6.5 ns

7143SA55JGB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

68

QCCN

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

MIL-PRF-38535

NO LEAD

PARALLEL

ASYNCHRONOUS

315 mA

2048 words

5

16

CHIP CARRIER

125 Cel

2KX16

2K

-55 Cel

QUAD

S-PQCC-N68

5.5 V

32768 bit

4.5 V

55 ns

7052L25PFGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

120

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2048 words

5

8

FLATPACK, LOW PROFILE, FINE PITCH

.4 mm

85 Cel

2KX8

2K

-40 Cel

MATTE TIN

QUAD

S-PQFP-G120

3

5.5 V

1.6 mm

14 mm

16384 bit

4.5 V

e3

260

14 mm

25 ns

70V3379S4BFG8

Renesas Electronics

APPLICATION SPECIFIC SRAM

COMMERCIAL

208

BGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

460 mA

32768 words

COMMON

3.3

2.5/3.3,3.3

18

GRID ARRAY

BGA208,17X17,32

SRAMs

.8 mm

70 Cel

3-STATE

32KX18

32K

3.15 V

0 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

2

S-PBGA-B208

3

3.45 V

133 MHz

Not Qualified

589824 bit

3.15 V

e1

30

260

.015 Amp

4.2 ns

7006L20JGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

68

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

16384 words

5

8

CHIP CARRIER

1.27 mm

85 Cel

16KX8

16K

-40 Cel

MATTE TIN

QUAD

S-PQCC-J68

3

5.5 V

4.572 mm

24.2062 mm

Not Qualified

131072 bit

4.5 V

e3

260

24.2062 mm

20 ns

70V9089L6PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

65536 words

3.3

8

FLATPACK, LOW PROFILE, FINE PITCH

.5 mm

70 Cel

64KX8

64K

0 Cel

MATTE TIN

QUAD

S-PQFP-G100

3.6 V

1.4 mm

14 mm

524288 bit

3 V

FLOW-THROUGH OR PIPELINED ARCHITECTURE

e3

14 mm

6.5 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.