SQUARE SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
70V07S25PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	80	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	FLATPACK, LOW PROFILE			.65 mm	70 Cel		32KX8	32K		0 Cel	MATTE TIN	QUAD		S-PQFP-G80	3	3.6 V	1.6 mm		14 mm	Not Qualified	262144 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3					14 mm	25 ns
7143SA70FGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	310 mA	2048 words		5		16	FLATPACK			1.27 mm	125 Cel		2KX16	2K		-55 Cel		QUAD		S-PQFP-F68		5.5 V			24.0792 mm		32768 bit	4.5 V							24.0792 mm	70 ns
70T3719MS166BB	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	324	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	900 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	72	GRID ARRAY	BGA324,18X18,40	SRAMs	1 mm	70 Cel	3-STATE	256KX72	256K	2.4 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B324		2.6 V		166 MHz		Not Qualified	18874368 bit	2.4 V		e0				.02 Amp		12 ns
70V3599S133DRG8	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	208	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	400 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK	QFP208,1.2SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G208	3	3.45 V		133 MHz		Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e3				.03 Amp		4.2 ns
709169L9BF	Renesas Electronics	MULTI-PORT SRAM		100		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	360 mA	16384 words	COMMON	5		9					70 Cel	3-STATE	16KX9	16K	4.5 V	0 Cel		BOTTOM	2	S-PBGA-B100		5.5 V					147456 bit	4.5 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE				YES	.003 Amp		9 ns
70V35S15PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	215 mA	8192 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	8KX18	8K	3 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	147456 bit	3 V		e3	30	260		.005 Amp	14 mm	15 ns
70V07S35PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	80	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	FLATPACK			.65 mm	70 Cel		32KX8	32K		0 Cel	MATTE TIN	QUAD		S-XQFP-F80	3	3.6 V	1.6 mm		14 mm	Not Qualified	262144 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3					14 mm	35 ns
7052L20GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	108	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	250 mA	2048 words	COMMON	5	5	8	GRID ARRAY	PGA108,12X12	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	2 V	0 Cel	MATTE TIN	PERPENDICULAR	4	S-CPGA-P108		5.5 V	5.207 mm		30.48 mm	Not Qualified	16384 bit	4.5 V		e3				.0006 Amp	30.48 mm	20 ns
70V7599S166BC8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	790 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.7 mm	166 MHz	17 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e0	20	225		.03 Amp	17 mm	12 ns
7014S15JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		4096 words		5		9	CHIP CARRIER			1.27 mm	70 Cel		4KX9	4K		0 Cel	MATTE TIN	QUAD		S-PQCC-J52		5.5 V	4.57 mm		19.1262 mm		36864 bit	4.5 V		e3					19.1262 mm	15 ns
7025L25JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	220 mA	8192 words		5		16	CHIP CARRIER			1.27 mm	70 Cel		8KX16	8K		0 Cel		QUAD		S-PQCC-J84		5.5 V			29.3116 mm		131072 bit	4.5 V							29.3116 mm	25 ns
7143SA25PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	330 mA	2048 words		5		16	FLATPACK			.5 mm	85 Cel		2KX16	2K		-40 Cel		QUAD		S-PQFP-G100		5.5 V			14 mm		32768 bit	4.5 V							14 mm	25 ns
70V3599S166BCG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	500 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V		166 MHz		Not Qualified	4718592 bit	3.15 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1	30	260		.03 Amp		3.6 ns
5962-9161704MYX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		8192 words		5		16	FLATPACK			1.27 mm	125 Cel		8KX16	8K		-55 Cel	TIN LEAD	QUAD		S-XQFP-F84		5.5 V	3.556 mm		29.21 mm	Qualified	131072 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE	e0					29.21 mm	55 ns
70T3589S166BFI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	510 mA	65536 words	COMMON		2.5,2.5/3.3	36	GRID ARRAY, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX36	64K	2.4 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3			166 MHz		Not Qualified	2359296 bit			e0	20	225		.02 Amp		12 ns
70V7599S166BC	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	790 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.7 mm	166 MHz	17 mm	Not Qualified	4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.03 Amp	17 mm	12 ns
70V06S25PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		16384 words		3.3		8	FLATPACK, LOW PROFILE			.8 mm	85 Cel		16KX8	16K		-40 Cel	MATTE TIN	QUAD		S-PQFP-G64	3	3.6 V	1.6 mm		14 mm	Not Qualified	131072 bit	3 V		e3					14 mm	25 ns
70V06S20GGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		16384 words		3.3		8	GRID ARRAY				85 Cel		16KX8	16K		-40 Cel		PERPENDICULAR		S-CPGA-P68		3.6 V					131072 bit	3 V								20 ns
70V06S25JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		3.3		8	CHIP CARRIER			1.27 mm	70 Cel		16KX8	16K		0 Cel	MATTE TIN	QUAD		S-PQCC-J68		3.6 V	4.57 mm		24.2062 mm	Not Qualified	131072 bit	3 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3					24.2062 mm	25 ns
7025S55GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	285 mA	8192 words		5		16	GRID ARRAY			2.54 mm	70 Cel		8KX16	8K		0 Cel		PERPENDICULAR		S-CPGA-P84		5.5 V			27.94 mm		131072 bit	4.5 V							27.94 mm	55 ns
70V3389S6BCI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	360 mA	65536 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	64KX18	64K	3.15 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3			83 MHz		Not Qualified	1179648 bit			e0				.03 Amp		6 ns
7006L15PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	64	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	260 mA	16384 words	COMMON	5	5	8	FLATPACK	QFP64,.66SQ,32	SRAMs	.8 mm	70 Cel	3-STATE	16KX8	16K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	131072 bit	4.5 V		e3	30	260		.0015 Amp	14 mm	15 ns
70V9359L7PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	280 mA	8192 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	8KX18	8K	3 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	3.6 V	1.4 mm		14 mm	Not Qualified	147456 bit	3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3	30	260		.003 Amp	14 mm	7.5 ns
7025L25GB	Renesas Electronics	DUAL-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	220 mA	8192 words	COMMON	5		16	GRID ARRAY	PGA84M,11X11		2.54 mm	125 Cel	3-STATE	8KX16	8K		-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P84	1	5.5 V	3.68 mm		27.94 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP	e0		240	YES	.004 Amp	27.94 mm	25 ns
70V9369L9PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		FLAT	PARALLEL	SYNCHRONOUS	225 mA	16384 words	COMMON	3.3	3.3	18	FLATPACK	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	16KX18	16K	3 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-F100	3	3.6 V	1.6 mm	66 MHz	14 mm	Not Qualified	294912 bit	3 V		e3	30	260		.005 Amp	14 mm	9 ns
70P265L65BYI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	100	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	70 mA	16384 words	COMMON	1.8	1.8/3	16	GRID ARRAY	BGA100,10X10,20	SRAMs	.5 mm	85 Cel	3-STATE	16KX16	16K		-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B100		1.9 V				Not Qualified	262144 bit	1.7 V	IT CAN ALSO OPERATE AT 2.5 TO 3 VOLT NOMINAL SUPPLY	e0				.000008 Amp		65 ns
70V3379S5BFI	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	208	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	415 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	32KX18	32K	3.15 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.2 mm	100 MHz	15 mm	Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE	e0	20	225		.03 Amp	15 mm	5 ns
7006L20FB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	FLAT	PARALLEL	ASYNCHRONOUS	320 mA	16384 words	COMMON	5	5	8	FLATPACK	QFL68,.95SQ	SRAMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-PQFP-F68	1	5.5 V	3.683 mm		24.0792 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0		240		.004 Amp	24.0792 mm	20 ns
5962-8700210UA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	200 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48	1	5.5 V	3.048 mm		14.3002 mm	Not Qualified	16384 bit	4.5 V		e0		240		.03 Amp	14.3002 mm	90 ns
5962-8687508YA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	185 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48	1	5.5 V	3.048 mm		14.3002 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0		240	YES	.004 Amp	14.3002 mm	45 ns
70T3599S166BC	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	450 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	2.4 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm	166 MHz	17 mm	Not Qualified	4718592 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.015 Amp	17 mm	12 ns
7006S25GB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	SPGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	PIN/PEG	PARALLEL	ASYNCHRONOUS	340 mA	16384 words	COMMON	5	5	8	GRID ARRAY, SHRINK PITCH	PGA68,11X11	SRAMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	4.5 V	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68	1	5.5 V	5.207 mm		29.464 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0		240		.03 Amp	29.464 mm	25 ns
70V3379S4BF8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	208	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	460 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	32KX18	32K	3.15 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.2 mm	133 MHz	15 mm	Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE	e0	20	225		.015 Amp	15 mm	4.2 ns
7006S20JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	370 mA	16384 words		5		8	CHIP CARRIER			1.27 mm	85 Cel		16KX8	16K		-40 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V	4.572 mm		24.2062 mm	Not Qualified	131072 bit	4.5 V		e3					24.2062 mm	20 ns
70T3719MS133BBGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	324	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	900 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	72	GRID ARRAY	BGA324,18X18,40	SRAMs	1 mm	85 Cel	3-STATE	256KX72	256K	2.4 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B324	3	2.6 V		133 MHz		Not Qualified	18874368 bit	2.4 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1				.025 Amp		15 ns
70T3799MS166BBG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	324	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		131072 words		2.5		72	GRID ARRAY				70 Cel		128KX72	128K		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B324		2.6 V					9437184 bit	2.4 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1						12 ns
7007L55JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	270 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	PGA68,11X11	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm		24.2062 mm	Not Qualified	262144 bit	4.5 V		e3	30	260		.01 Amp	24.2062 mm	55 ns
7052L25GGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	108	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535 Class Q	PIN/PEG	PARALLEL	ASYNCHRONOUS	300 mA	2048 words	COMMON	5	5	8	GRID ARRAY	PGA108,12X12	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	MATTE TIN	PERPENDICULAR	4	S-CPGA-P108		5.5 V	5.207 mm		30.48 mm	Not Qualified	16384 bit	4.5 V		e3				.0018 Amp	30.48 mm	25 ns
7026L20JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		16	CHIP CARRIER				125 Cel		16KX16	16K		-55 Cel		QUAD		S-PQCC-J84		5.5 V					262144 bit	4.5 V								20 ns
70V3579S4BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	460 mA	32768 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	32KX36	32K	3.15 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	3.45 V		133 MHz		Not Qualified	1179648 bit	3.15 V		e0	20	225				4.2 ns
7025L15PFG8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	260 mA	8192 words	COMMON	5		16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		.5 mm	70 Cel	3-STATE	8KX16	8K		0 Cel	MATTE TIN	QUAD	2	S-PQFP-G100	3	5.5 V	1.4 mm		14 mm	Not Qualified	131072 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP	e3	30	260	YES	.0015 Amp	14 mm	15 ns
7027L55GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	108	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		32768 words		5		16	GRID ARRAY				70 Cel		32KX16	32K		0 Cel		PERPENDICULAR		S-CPGA-P108		5.5 V					524288 bit	4.5 V								55 ns
70V07S25PFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	80	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	FLATPACK, LOW PROFILE			.65 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	QUAD		S-PQFP-G80	3	3.6 V	1.6 mm		14 mm	Not Qualified	262144 bit	3 V		e0					14 mm	25 ns
7024L35JGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class B	J BEND	PARALLEL	ASYNCHRONOUS	250 mA	4096 words	COMMON	5	5	16	CHIP CARRIER	LDCC84,1.2SQ	SRAMs	2.54 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	MATTE TIN	QUAD	2	S-PQCC-J84	3	5.5 V	4.572 mm		29.3116 mm	Not Qualified	65536 bit	4.5 V		e3	40	260		.004 Amp	29.3116 mm	35 ns
5962-8687512UA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	230 mA	1024 words	COMMON	5	5	8	FLATPACK	QFL48,.75SQ	SRAMs	1.27 mm	125 Cel	3-STATE	1KX8	1K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F48		5.5 V	2.7432 mm		19.05 mm	Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0			YES	.03 Amp	19.05 mm	45 ns
7143SA55JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCN	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	285 mA	2048 words		5		16	CHIP CARRIER				70 Cel		2KX16	2K		0 Cel		QUAD		S-PQCC-N68		5.5 V					32768 bit	4.5 V								55 ns
70T3589S166BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	450 mA	65536 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	64KX36	64K	2.4 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.2 mm	166 MHz	15 mm	Not Qualified	2359296 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.015 Amp	15 mm	12 ns
7143SA70FG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		16	FLATPACK			1.27 mm	70 Cel		2KX16	2K		0 Cel		QUAD		S-PQFP-F68		5.5 V			24.0792 mm		32768 bit	4.5 V							24.0792 mm	70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.