SQUARE SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
70V3569S6BFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	310 mA	16384 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	16KX36	16K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	83 MHz	15 mm	Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	e1	30	260		.015 Amp	15 mm	6 ns
7006S17JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	310 mA	16384 words		5		8	CHIP CARRIER			1.27 mm	70 Cel		16KX8	16K		0 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V	4.572 mm		24.2062 mm		131072 bit	4.5 V		e3					24.2062 mm	17 ns
70V05S20JI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	225 mA	8192 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	85 Cel	3-STATE	8KX8	8K	3 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1					Not Qualified	65536 bit			e0	20	225		.015 Amp		20 ns
70T631S12BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	355 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX18	256K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.7 mm		15 mm	Not Qualified	4718592 bit	2.4 V		e1	30	260		.01 Amp	15 mm	12 ns
709389L9PFI	Renesas Electronics	MULTI-PORT SRAM		100		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	430 mA	65536 words	COMMON	5		18					85 Cel	3-STATE	64KX18	64K	4.5 V	-40 Cel		QUAD	2	S-PQFP-G100		5.5 V					1179648 bit	4.5 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE				YES	.006 Amp		9 ns
70T651S10BFI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	445 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX36	256K	2.4 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.5 mm		15 mm	Not Qualified	9437184 bit	2.4 V		e0	20	225		.02 Amp	15 mm	10 ns
7143SA25FGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	330 mA	2048 words		5		16	FLATPACK			1.27 mm	85 Cel		2KX16	2K		-40 Cel		QUAD		S-PQFP-F68		5.5 V			24.0792 mm		32768 bit	4.5 V							24.0792 mm	25 ns
7027S20GG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	108	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		32768 words		5		16	GRID ARRAY				70 Cel		32KX16	32K		0 Cel		PERPENDICULAR		S-CPGA-P108		5.5 V					524288 bit	4.5 V								20 ns
7143LA35PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	210 mA	2048 words		5		16	FLATPACK			.5 mm	70 Cel		2KX16	2K		0 Cel		QUAD		S-PQFP-G100		5.5 V			14 mm		32768 bit	4.5 V							14 mm	35 ns
7024S55PFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4096 words		5		16	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	85 Cel		4KX16	4K		-40 Cel	MATTE TIN	QUAD		S-PQFP-G100		5.5 V	1.6 mm		14 mm		65536 bit	4.5 V		e3					14 mm	55 ns
70V06S20JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		3.3		8	CHIP CARRIER			1.27 mm	85 Cel		16KX8	16K		-40 Cel	MATTE TIN	QUAD		S-PQCC-J68		3.6 V	4.57 mm		24.2062 mm	Not Qualified	131072 bit	3 V		e3					24.2062 mm	20 ns
7006S35FG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	16384 words	COMMON	5	5	8	CHIP CARRIER	QFL68,.95SQ	SRAMs	1.27 mm	70 Cel	3-STATE	16KX8	16K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J68		5.5 V			24.2062 mm	Not Qualified	131072 bit	4.5 V		e3				.015 Amp	24.2062 mm	35 ns
7026S25GGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		16384 words		5		16	GRID ARRAY				85 Cel		16KX16	16K		-40 Cel		PERPENDICULAR		S-CPGA-P84		5.5 V					262144 bit	4.5 V								25 ns
70V3569S5BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	360 mA	16384 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	16KX36	16K	3.15 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.7 mm	100 MHz	15 mm	Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	e1	30	260		.015 Amp	15 mm	5 ns
7024L55JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		4096 words		5		16	CHIP CARRIER			2.54 mm	70 Cel		4KX16	4K		0 Cel	MATTE TIN	QUAD		S-PQCC-J84		5.5 V	4.572 mm		29.3116 mm		65536 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e3					29.3116 mm	55 ns
70T3589S133BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	370 mA	65536 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	64KX36	64K	2.4 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.2 mm	133 MHz	15 mm	Not Qualified	2359296 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.015 Amp	15 mm	15 ns
7024S17G	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	310 mA	4096 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11	SRAMs	2.54 mm	70 Cel	3-STATE	4KX16	4K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	PERPENDICULAR	2	S-CPGA-P84	1	5.5 V	5.207 mm		27.94 mm	Not Qualified	65536 bit	4.5 V	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	e0	NOT SPECIFIED	240		.015 Amp	27.94 mm	17 ns
5962-8687507YA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	185 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48	1	5.5 V	3.048 mm		14.3002 mm	Qualified	8192 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e0		240	YES	.004 Amp	14.3002 mm	55 ns
7143SA55JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCN	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	285 mA	2048 words		5		16	CHIP CARRIER				70 Cel		2KX16	2K		0 Cel		QUAD		S-PQCC-N68		5.5 V					32768 bit	4.5 V								55 ns
70T3599S166BC8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	450 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	2.4 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm	166 MHz	17 mm	Not Qualified	4718592 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.015 Amp	17 mm	12 ns
7006S35JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	250 mA	16384 words		5		8	CHIP CARRIER			1.27 mm	70 Cel		16KX8	16K		0 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V	4.572 mm		24.2062 mm		131072 bit	4.5 V		e3					24.2062 mm	35 ns
7006L35JB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	250 mA	16384 words	COMMON	5	5	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	125 Cel	3-STATE	16KX8	16K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm		24.2062 mm	Not Qualified	131072 bit	4.5 V		e0	20	225		.004 Amp	24.2062 mm	35 ns
70V3389S6BFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	360 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX18	64K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	3.45 V	1.2 mm	83 MHz	15 mm	Not Qualified	1179648 bit	3.15 V	PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE	e1	30	260		.03 Amp	15 mm	6 ns
7143SA45GG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	290 mA	2048 words		5		16	GRID ARRAY			2.54 mm	70 Cel		2KX16	2K		0 Cel		PERPENDICULAR		S-CPGA-P68		5.5 V			29.464 mm		32768 bit	4.5 V							29.464 mm	45 ns
5962-8976408MYA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS	260 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LCC48,.56SQ,40	SRAMs	1.016 mm	125 Cel	3-STATE	4KX8	4K	2 V	-55 Cel	TIN LEAD	QUAD	2	S-CQCC-N48	1	5.5 V	3.048 mm		14.3002 mm	Qualified	32768 bit	4.5 V		e0		240	YES	.004 Amp	14.3002 mm	35 ns
5962-9161703MXX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	PIN/PEG	PARALLEL	ASYNCHRONOUS		8192 words		5		16	GRID ARRAY			2.54 mm	125 Cel		8KX16	8K		-55 Cel	TIN LEAD	PERPENDICULAR		S-CPGA-P84		5.5 V	5.207 mm		27.94 mm	Qualified	131072 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE	e0					27.94 mm	55 ns
5962-9161703MYX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		8192 words		5		16	FLATPACK			1.27 mm	125 Cel		8KX16	8K		-55 Cel	TIN LEAD	QUAD		S-XQFP-F84		5.5 V	3.556 mm		29.21 mm	Qualified	131072 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE	e0					29.21 mm	55 ns
70V05L15JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCN	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	185 mA	8192 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	3 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-N68	1	3.6 V	4.572 mm		24.2062 mm	Not Qualified	65536 bit	3 V		e3	30	260		.0025 Amp	24.2062 mm	15 ns
5962-9161705MYA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	DFP	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS	400 mA	8192 words	COMMON	5	5	16	FLATPACK	QFL84,1.2SQ	SRAMs	1.27 mm	125 Cel	3-STATE	8KX16	8K	4.5 V	-55 Cel	TIN LEAD	QUAD	2	S-XQFP-F84		5.5 V	3.56 mm		29.21 mm	Qualified	131072 bit	4.5 V	INTERRUPT FLAG; ARBITER; SEMAPHORE	e0			YES	.03 Amp	29.21 mm	45 ns
70V06S20JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words		3.3		8	CHIP CARRIER			1.27 mm	70 Cel		16KX8	16K		0 Cel	MATTE TIN	QUAD		S-PQCC-J68		3.6 V	4.57 mm		24.2062 mm	Not Qualified	131072 bit	3 V		e3					24.2062 mm	20 ns
70T659S10BF	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	405 mA	131072 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	128KX36	128K	2.4 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.5 mm		15 mm	Not Qualified	4718592 bit	2.4 V		e0	20	225		.01 Amp	15 mm	10 ns
70V05L20JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCN	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	195 mA	8192 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	85 Cel	3-STATE	8KX8	8K	3 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-N68	1	3.6 V	4.572 mm		24.2062 mm	Not Qualified	65536 bit	3 V		e3	30	260		.005 Amp	24.2062 mm	20 ns
7024L35PFGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class B	GULL WING	PARALLEL	ASYNCHRONOUS	250 mA	4096 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	65536 bit	4.5 V		e3	30	260		.004 Amp	14 mm	35 ns
7006S25GG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	265 mA	16384 words		5		8	GRID ARRAY			2.54 mm	70 Cel		16KX8	16K		0 Cel	MATTE TIN	PERPENDICULAR		S-CPGA-P68		5.5 V	2.413 mm		27.889 mm		131072 bit	4.5 V		e3					27.889 mm	25 ns
7006L70JGB8	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	J BEND	PARALLEL	ASYNCHRONOUS	280 mA	16384 words		5		8	CHIP CARRIER			1.27 mm	125 Cel		16KX8	16K		-55 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V			24.2062 mm	Not Qualified	131072 bit	4.5 V		e3					24.2062 mm	70 ns
70V06L35PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		16384 words		3.3		8	FLATPACK, LOW PROFILE			.8 mm	85 Cel		16KX8	16K		-40 Cel	MATTE TIN	QUAD		S-PQFP-G64	3	3.6 V	1.6 mm		14 mm	Not Qualified	131072 bit	3 V		e3					14 mm	35 ns
5962-8866508UX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		2048 words		5		16	FLATPACK			1.27 mm	125 Cel		2KX16	2K		-55 Cel	TIN LEAD	QUAD		S-XQFP-F68		5.5 V	3.05 mm		24 mm	Not Qualified	32768 bit	4.5 V		e0					24.08 mm	90 ns
70T3339S166BCGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	510 mA	524288 words	COMMON	2.5	2.5,2.5/3.3	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	512KX18	512K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-CBGA-B256	3	2.6 V	1.7 mm	166 MHz	17 mm	Not Qualified	9437184 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e1	30	260		.02 Amp	17 mm	3.6 ns
7006S20FGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	370 mA	16384 words		5		8	CHIP CARRIER			1.27 mm	85 Cel		16KX8	16K		-40 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V			24.2062 mm	Not Qualified	131072 bit	4.5 V		e3					24.2062 mm	20 ns
7025L25FGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	QFF	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	PARALLEL	ASYNCHRONOUS	300 mA	8192 words		5		16	FLATPACK			1.27 mm	125 Cel		8KX16	8K		-55 Cel		QUAD		S-PQFP-F84		5.5 V			29.21 mm		131072 bit	4.5 V							29.21 mm	25 ns
70V3569S5BCGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	415 mA	16384 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	16KX36	16K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.7 mm	100 MHz	17 mm	Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	e1	30	260		.03 Amp	17 mm	5 ns
70V7319S133BCGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY				85 Cel		256KX18	256K		-40 Cel		BOTTOM		S-PBGA-B256		3.45 V					4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE							4.2 ns
70T651S10BCGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	445 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	256KX36	256K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm		17 mm	Not Qualified	9437184 bit	2.4 V		e1	30	260		.02 Amp	17 mm	10 ns
70T3589S166BFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	450 mA	65536 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	64KX36	64K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	2.6 V	1.7 mm	166 MHz	15 mm	Not Qualified	2359296 bit	2.4 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE	e1	30	260		.015 Amp	15 mm	12 ns
7007S25JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	345 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	PGA68,11X11	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J68	1	5.5 V	4.572 mm		24.2062 mm	Not Qualified	262144 bit	4.5 V		e3	30	260		.03 Amp	24.2062 mm	25 ns
7025S15JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	84	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	310 mA	8192 words		5		16	CHIP CARRIER			1.27 mm	70 Cel		8KX16	8K		0 Cel		QUAD		S-PQCC-J84		5.5 V			29.3116 mm		131072 bit	4.5 V							29.3116 mm	15 ns
70V3569S5BCGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	415 mA	16384 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	16KX36	16K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B256	3	3.45 V	1.7 mm	100 MHz	17 mm	Not Qualified	589824 bit	3.15 V	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	e1	30	260		.03 Amp	17 mm	5 ns
7006L25JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	220 mA	16384 words		5		8	CHIP CARRIER			1.27 mm	70 Cel		16KX8	16K		0 Cel	MATTE TIN	QUAD		S-PQCC-J68		5.5 V	4.572 mm		24.2062 mm		131072 bit	4.5 V		e3					24.2062 mm	25 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.